Abstract: An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

Abstract: The invention describes a method of controlling a segmented flash (10) having a plurality of flash segments (S1, S2, . . . , Sn), which method comprises the steps of measuring the forward voltages (Vf1, Vf2, . . . , Vfn) of the flash segments (S1, S2, . . . , Sn); and adjusting the brightness of the flash segments (S1, S2, . . . , Sn) on the basis of the measured forward voltages (Vf1, Vf2, . . . , Vfn) to achieve a desired illumination profile (P) for the segmented flash (10). The invention further describes a segmented flash system (1) comprising a segmented flash (10) with a plurality of flash segments (S1, S2, . . . , Sn), wherein each flash segment (S1, S2, . . . , Sn) is arranged to illuminate a portion (20) of a scene (2); and a flash driver (11) adapted to perform the steps of the inventive method to adjust the brightness of the flash segments (S1, S2, . . . , Sn).

Abstract: The present invention provides a display panel and a manufacturing method of the display panel. The display panel includes a base substrate, a light emitting device layer, an encapsulation layer, and a color filter layer. The color filter layer includes multiple first light shielding portions, multiple color resists, and multiple second light shielding portions. An opening is formed between each two adjacent second light shielding portions and arranged corresponding to the pixel unit. The present invention increases an area for inkjet printing in a high-resolution small-sized display panel and reduces the reflectivity of the display panel to ambient light, and edges of the color filter layer less affect a light emitting device.

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: Systems, methods and devices are descried. A method of controlling a segmented flash having a plurality of flash segments each arranged to illuminate a portion of the scene includes determining an amount of light for illuminating each portion of the scene, measuring forward voltages of each of the flash segments, and adjusting a brightness of each of the flash segments to the determined amount of light for illuminating each portion of the scene. The adjusting is performed by at least one of adjusting a magnitude of a drive current to each of the flash segments, adjusting a duty cycle of the drive current to each of the flash segments, or scheduling a dummy flash, based at least in part on the measured forward voltages.

Abstract: A method of manufacturing an organic light emitting display device, the method includes forming a thin film transistor (TFT) in an active area of a substrate and forming a signal pad and a first pad electrode, connected to the signal pad, in a pad area of the substrate, forming a passivation layer on the TFT and the first pad electrode, forming a planarization layer on the passivation layer, removing a certain region of the passivation layer to simultaneously form an area, through which the TFT is exposed to the outside, and an area through which the first pad electrode is exposed to the outside, forming a first anode electrode connected to the TFT, a first auxiliary electrode spaced apart from the first anode electrode, and a second pad electrode that is connected to the first pad electrode and covers the exposed first pad electrode; and forming a second anode electrode, covering a top and a side surface of the first anode electrode, and a second auxiliary electrode covering a top and a side surface of the f

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: The present disclosure provides an organic light emitting diode (OLED) display panel and a method for manufacturing same. The OLED display panel includes a substrate, a thermal insulating layer, a buffer, a driving TFT, and a storage capacitor. The substrate includes an arrangement area. The thermal insulating layer is disposed in the arrangement area. The buffer layer is disposed on the substrate. Both the driving TFT and the storage capacitor are disposed on the buffer layer to correspond to the arrangement area. According to the present disclosure, the thermal insulating layer prevents heat in the amorphous silicon layer from dissipating rapidly when an annealing treatment is performed for the amorphous silicon layer to have amorphous silicon crystallize.

Abstract: Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes may include a photon-reflective material.

Abstract: A structured illumination microscope includes a spatial light modulator containing ferroelectric liquid crystals, an interference optical system for illuminating a specimen with an interference fringe generated by making lights from the spatial light modulator interfere with each other, a controller for applying a voltage pattern having a predetermined voltage value distribution to the ferroelectric liquid crystals, an image forming optical system for forming an image of the specimen, which has been irradiated with the interference fringe, an imaging element for generating an image by imaging the image formed by the image forming optical system, and a demodulating part for generating a demodulated image using a plurality of images, wherein the controller applies an image generation voltage pattern for generating the demodulated images and a burn-in prevention voltage pattern calculated based on the image generation voltage pattern to the ferroelectric liquid crystals.

Abstract: Disclosed are an array substrate of an OLED display device and a method for manufacturing the same. Thin-film transistors having different functions can have different electrical properties. The array substrate includes a base substrate, a semiconductor layer, a first insulating layer, a first metal layer, a second insulating layer, a second metal layer, and a third insulating layer which are arranged sequentially from bottom to top. A plurality of driving units are formed on the array substrate, and each of the driving units comprises a first thin-film transistor and a second thin-film transistor.

Abstract: A micro display, which includes LEDs and TFTs of a TFT electronic control circuit for controlling the LEDs, is produced monolithically on a silicon, silicon carbide, or sapphire wafer. The display includes red, green, and blue micro LEDs, and electronic control circuits include TFTs with Indium gallium zinc oxide (IGZO) channels or Indium phosphide (InP) channels. The TFTs are formed above the LEDs and laterally removed from the LEDs and paths of light emissions from the plurality of LEDs to prevent light blocking by the TFTs.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion unit having a light incident surface and including: a first electrode; a second electrode disposed further toward the light incident surface; and a photoelectric conversion layer disposed between the first and second electrodes. The photoelectric conversion apparatus includes a member in contact with the photoelectric conversion layer and constituting a light guide together with the layer. An area of a first surface parallel to the light incident surface at a portion of the photoelectric conversion layer surrounded by the member is smaller than an area of a second surface disposed between the first surface and the second electrode at a portion of the photoelectric conversion layer surrounded by the member, and an area of orthogonal projection to the light incident surface of the first electrode is smaller than an area of orthogonal projection to the light incident surface of the second surface.

Abstract: Provided is a display device including a first sub-pixel, a second sub-pixel adjacent to the first sub-pixel. The first sub-pixel and the second sub-pixel each include a semiconductor film, a gate electrode, a gate insulating film, an interlayer insulating film, and a leveling film and further possesses a light-emitting element located over the leveling film. The display device has a partition wall located between the first sub-pixel and the second sub-pixel and a trench passing through the leveling film.

Abstract: Light emitter packages, systems, and methods having multiple light emitter chips and operable at multiple voltages are provided. In some aspects, light emitter packages described herein include a submount having a plurality of contact pads and a plurality of light emitting diode (LED) chips disposed over one or more surfaces thereof. The plurality of contact pads are configured to pass electrical current into the plurality of LED chips for allowing the package to be operable in at least two different voltages. The package can be operable at approximately 3 volts (V) or more, approximately 6V or more, approximately 9 V or more, approximately 12V or more, approximately 18 V or more, or approximately 36 V or more.

Abstract: The embodiments of the present invention provide an organic light emitting diode display device and a method for manufacturing the same.

Abstract: An electronic device is provided with a display and a light sensor that receives light that passes through the display. The display includes features that increase the amount of light that passes through the display. The features may be translucency enhancement features that allow light to pass directly through the display onto a light sensor mounted behind the display or may include a light-guiding layer that guides light through the display onto a light sensor mounted along an edge of the display. The translucency enhancement features may be formed in a reflector layer or an electrode layer for the display. The translucency enhancement features may include microperforations in a reflector layer of the display, a light-filtering reflector layer of the display, or a reflector layer of the display that passes a portion of the light and reflects an additional portion of the light.

Abstract: A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Abstract: An optical communication device and a control method thereof are provided. The optical communication device includes a driving module, a data transmission module, a light emitting module, and a feedback module. The driving module generates a driving current. The data transmission module generates a data current according to a piece of data. The light emitting module is electrically connected to the driving module and the data transmission module directly and emits visible light according to an illuminating current generated by combining the driving current with the data current. The feedback module adjusts a direct current (DC) potential of one of the driving current and the data current so as to make an average intensity of the visible light equal a preset intensity.

Abstract: The present application discloses an array substrate comprising a first layer comprising a data line; at least one second layer comprising at least one data line overlapping area on intersections between the first layer and the at least one second layer; and a spacer layer between the first layer and the second layer. The spacer layer comprises a plurality of spacer units spaced apart from each other. Each of the plurality of spacer units is in an area corresponding to the overlapping area.

Abstract: A display including a light-emitting element is provided. The light-emitting element includes a lower display electrode, an organic layer including a light-emitting layer, and an upper display electrode, wherein the lower display electrode is formed in a source-drain electrode layer or a gate electrode layer. A method of manufacture and an electronic device including the display are also provided.

Abstract: An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A method for transmitting a signal using an optical coupling device includes converting a first electric signal into an optical signal, converting the optical signal into a first current, and outputting a second current that corresponds to the first current as a second electric signal. The second current may be larger than the first current.

Abstract: Semiconductor layers on active areas for transistors in a memory cell region (region A) and a peripheral circuit region (region B) are simultaneously epitaxially grown in the same thickness in which the adjacent semiconductor layers in region A do not come into contact with each other. Only semiconductor layer (10) in region B is also grown from the surface of a substrate which is exposed when only the surface of STI (2) in region B is drawn back, so that a facet (F) of the semiconductor layer 10 is formed outside the active area, followed by ion-implantation to form a high density diffusion layer (11) in region B. Accordingly, short circuit between semiconductor layers on source/drain electrodes of transistors in region A is prevented, and uniformity of the junction depth of the layer (11) of the source/drain electrodes including an ESD region in a transistor of region B is obtained, thereby restricting the short channel effect.

Abstract: An organic light emitting display panel including a partition wall to prevent different organic light emitting materials from being mixed with each other between adjacent light emitting areas. The partition wall may protrude from a surface of a pixel definition layer or a first common layer. Accordingly, desired light colors are generated by organic light emitting patterns respectively disposed in the light emitting areas.

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

Abstract: A method for producing an organic electroluminescent panel having an organic layer formed by a coating step and a large aperture ratio includes: a first step of arraying and distributing a plurality of first electrodes on or above a substrate; a second step of forming stacking bodies each composed of a plurality of organic-emitting layer on the top face of each of the first electrodes; and a third step of forming organic electroluminescent elements by forming second electrodes respectively on or above the stacking bodies. In the first step, a conductive body having an angled edge portion forming a edge line surrounding the top face itself is used. The second step includes a step of supplying at least a liquid having a light-emitting organic material that is ejected from a nozzle and supplied in a fine flow shape to the organic layer on the top face.

Abstract: An exemplary embodiment of the present invention provides an organic light emitting diode, comprising a substrate, a first electrode, an organic material layer, and a second electrode, wherein a trench comprising a concave part and a convex part is provided on the substrate, the first electrode is provided on the substrate on which the trench is formed by being deposited, and an auxiliary electrode is provided on the first electrode. The organic light emitting diode according to the exemplary embodiment of the present invention may increase surface areas of the first electrode and the auxiliary electrode formed on the substrate, thereby implementing a low resistance electrode. In addition, since a line width of the electrode is not increased, it is possible to prevent a decrease of an opening ratio of the organic light emitting diode.

Abstract: A display panel includes a first substrate on which an electrode line and a switching element are disposed, a second substrate positioned opposite the first substrate, a seal provided between the first substrate and the second substrate, a pad electrode that vertically overlaps the seal and is electrically connected to the electrode line, and a side electrode which is connected to one end of the pad electrode and includes a portion positioned on an exterior facing side of the seal.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: Embodiments are directed to an organic light emitting display device, including a substrate, and a plurality of pixels, each pixel including a protrusion pattern and a trench area formed in the substrate, an organic light emitting device disposed on the substrate, a capacitor, the capacitor including a first capacitor electrode and a second capacitor electrode, a first transistor, the first transistor being coupled to a gate line extended in a row direction, a data line extended in a column direction crossing the row direction, and the first capacitor electrode, and a second transistor, the second transistor being coupled to the first capacitor electrode, a voltage line extended in the column direction, and the organic light emitting device, wherein the second capacitor electrode is branched from the voltage line, and the gate line and the first capacitor electrode are formed on and overlap the protrusion pattern.

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.

Abstract: An organic electroluminescent display and method of manufacturing the same are disclosed. In one aspect, the organic electroluminescent display includes a substrate and a first electrode disposed on the substrate. It also includes a pixel definition layer disposed on the first electrode, wherein the pixel definition layer has an opening portion formed in an area overlapped with the first electrode. It further includes a lyophilic layer disposed on the first electrode and the pixel definition layer, an organic light emitting layer disposed on the lyophilic layer, and a second electrode disposed on the organic light emitting layer. The lyophilic layer includes a center portion and an edge portion. The center portion is disposed on the first electrode through the opening portion and includes at least one recess portion formed therein. The edge portion is extended from the center portion and disposed on the pixel definition layer.

Abstract: A flat panel display and a method of fabricating the same are provided. The flat panel display includes a conductor, and a passivation layer pattern disposed on a side end of the conductor. As such, the passivation layer pattern can prevent or reduce corrosion and damage of the conductor. In one embodiment, the conductor includes a conductive layer formed of a material selected from the group consisting of aluminum and an aluminum alloy. The passivation layer pattern may be formed of an organic material or an inorganic material.

Abstract: Embodiments of the present invention provide a method for manufacturing a transistor, a transistor, an array substrate and a display device. The method comprises: forming a first source/drain metal layer on a substrate; forming an insulating layer above the first source/drain metal layer; forming a gate metal layer on the insulating layer; forming a gate insulating layer on the gate metal layer; forming a semiconductor layer above the gate insulating layer; forming an etching blocking layer on the semiconductor layer; forming a second source/drain metal layer above the etching blocking layer; forming an insulating layer above the second source/drain metal layer.

Abstract: In order to improve the transmissivity of each pixel and the brightness of a high-definition screen, a TFT and a projection are disposed in each pixel, a source electrode of the TFT extends so as to cover the projection, an inorganic passivation film is formed over the TFT and the projection, an organic passivation film is formed on the inorganic passivation film on the TFT, an opposed electrode is formed on the organic passivation film, an upper insulation film is formed over the opposed electrode, a pixel electrode is formed on the upper insulation film, and the pixel electrode is connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection. Accordingly, the diameter of a through-hole can be made smaller.

Abstract: A method of manufacturing an organic light emitting diode (OLED) display includes forming an upper electrode power source line outside of a pixel area over a substrate, forming a lower electrode in the pixel area, forming at least one layer of an organic material layer in the pixel area and areas outside of the pixel area, forming an upper electrode in the pixel area, selectively removing portions of the organic material layer that are exposed outside of the upper electrode, thereby exposing the upper electrode power source line, and coating a conductive material between the upper electrode and the upper electrode power source line in a normal pressure condition such that the conductive material overlaps the upper electrode and the upper electrode power source line, thereby forming a connection portion.

Abstract: A photpcoupler includes: a light emitting element; a first photodiode array; a second photodiode array; a third photo diode array; an enhancement-mode MOSFET; a first depletion-mode MOSFET; and a second depletion mode MOSFET. The light emitting element converts the input electrical signal into the optical signal. A drain current of the enhancement-mode MOSFET is supplied to the external load when the optical signal is ON. A drain current of the first depletion-mode MOSFET is supplied to the external load when the optical signal is OFF and a voltage passing through the second depletion-mode MOSFET switched to the ON state is supplied to the gate of the first depletion-mode MOSFET. And the drain current of the first depletion-mode MOSFET is larger than a drain current of the first depletion-mode MOSFET when a gate voltage of the first depletion-mode MOSFET is zero.

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Abstract: According to one embodiment, an optical coupling device includes a light emitting element configured to convert an electric signal into an optical signal, a photo transistor circuit configured to convert the optical signal into a current, the photo transistor circuit including a first transistor having a collector connected to a power source and an emitter through which the current is output, and a current mirror circuit including a second transistor having a collector connected to the emitter of the first transistor, a base connected to the emitter of the first transistor, and an emitter connected to a ground, and a third transistor having a collector connected to an output terminal, a base connected to the base of the second transistor, and a emitter connected to the ground.

Abstract: An LED (light emitting diode) includes a base, a pair of leads fixed on the base, a housing secured on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity to receive the chip. The cavity includes an upper chamber and a lower chamber communicating with the upper chamber. The lower chamber is gradually expanded along a top-to-bottom direction of the LED, and the upper chamber is gradually expanded along a bottom-to-top direction of the LED. The encapsulant substantially fills the lower chamber and the upper chamber. A method for manufacturing the LED is also disclosed.

Abstract: An organic light emitting display apparatus in which image quality can be improved. The organic light emitting display apparatus includes: a substrate; a first electrode disposed on the substrate; a pixel definition layer formed on the first electrode and having an opening portion through which a region of the first electrode is exposed; an intermediate layer connected to the first electrode through the opening portion and including an organic emission layer; a second electrode electrically connected to the intermediate layer; and an inorganic planarization pattern portion disposed between the substrate and the first electrode and formed to at least correspond to the opening portion.

Abstract: A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

Abstract: A method of manufacturing an organic light-emitting element. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer, the banks defining apertures corresponding to light-emitters, the resin material being the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are then degraded by applying electrical power to an element structure.

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Abstract: One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %.

Abstract: A thin film transistor array panel includes a gate line and the driver connection line formed with the same layer material, a data line and a driving pad formed with the same layer material, a first field generating electrode and a connecting member formed with the same layer material, and a second field generating electrode and a dummy electrode layer formed with the same layer material.