Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.

Abstract: A method of fabricating an LED array including epitaxially and sequentially growing a conductive layer on a substrate, a first carrier confinement layer, an active layer, a second carrier confinement layer and a conductive cap. Selectively etching the cap to provide exposed surface areas defining row and column areas with a matrix of diodes positioned in rows and columns therebetween. Implanting a first impurity in the row areas to form vertical conductors extending through the second confinement, active and first confinement layers to provide surface contacts to each diode. Implanting a second impurity in the row and column areas through the second confinement and active layers to form an isolating resistive volume around each diode. Implanting a third impurity in the row areas through the second confinement, active, and first confinement layers and into the substrate to form an isolating resistive volume between each row of diodes.

Abstract: A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.

Abstract: n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same. In a preferred embodiment, a p-type gallium nitride substrate is used. A first layer, such as a magnesium zinc sulfide layer Mg.sub.x Zn.sub.1-x S is then deposited. Thereafter, a second layer such as an n-type zinc sulfide layer is deposited. The magnesium zinc sulfide layer forms an electron blocker layer, and preferably is adequately thick to prevent significant tunneling of electrons there through. Thus, the primary charge flow across the heterojunction is by way of holes injected into the n-type zinc sulfide region from the p-type gallium nitride region, resulting in electron-hole recombination in the zinc sulfide region to provide light emission in the wide bandgap zinc sulfide material. Alternate embodiments are disclosed.

Abstract: A multiwavelength LED device including a first LED constructed to emit light of a first wavelength and a second LED constructed to emit light of a second wavelength, different than the first wavelength. The first and second LEDs are stacked vertically on a substrate and positioned to both emit light in the same direction. One of the LEDs is transparent to light emitted by the other of the LEDs so that light from both LEDs is emitted through a single aperture and can be mixed in intensity to produce a variety of wavelengths. The LEDs are individually addressable.

Abstract: A nitride semiconductor device is made using a molecular beam epitaxy growth apparatus having a gas source for supplying a compound including gaseous nitrogen, solid body sources for supplying Group III constituents, and sources for supplying n-type and p-type dopants. A gaseous state compound containing nitrogen, and a Group III constituent is supplied to the surface of a substrate, wherein the substrate is at a temperature of 300.degree. to 1000.degree. C. and is under a pressure of less than 10.sup.-5 Torr, to produce a first layer of oriented polycrystalline nitride semiconductor on the substrate at a growth rate of 0.1 to 20 Angstroms/second. Subsequently, a gaseous state compound containing nitrogen and a Group III constituent is supplied to the surface of the first layer of the substrate to produce a single crystal nitride semiconductor layer on the first layer at a growth rate of 0.1 to 10 Angstroms/second.

Abstract: A color semiconductor display device in which optoelectronic elements capable of emitting/absorbing light of different predetermined wavelengths in the visible wavelength range (e.g. red, green, blue) are formed on a common substrate and comprise similar alloy compositions which are lattice matched to the substrate material. The alloy is preferably a III-V nitride alloy lattice matched to Si or GaP substrate material. In the disclosed embodiment, a color display device comprises a silicon or GaP substrate with an array of pixels, each being formed by a group of three (red, green, blue) color sub-pixels provided on the substrate. The pixels are formed of InAINSb alloy, with a quantum well regions of InNSb and barrier regions of AINSb, or are formed of AIGaAsSbN alloy, with quantum well regions of GaAsN and barrier regions of AINSb. Tuning of the wavelength emission/absorption characteristics of the sub-pixels is by doping of the quantum well material with aluminum and/or by quantum confinement.

Abstract: A full color light emitting diode display (310) utilizes semiconductor light emitting diodes (313) to produce red light and organic light emitting diodes (312) to produce blue light. Green light is produced by either semiconductor light emitting diodes (313) or by organic light emitting diodes (331). An array of semiconductor light emitting diodes is formed on a semiconductor substrate (322) and an array of organic light emitting diodes is also formed on semiconductor substrate (322) adjacent to the array of semiconductor light emitting diodes. The array of organic light emitting diodes cooperates with the array of semiconductor light emitting diodes to form an array of multi-wavelength pixels of the full color light emitting diode display (310).

Abstract: A light emitting diode (LED) and resistors for varying the light intensity of the LED are formed on a single chip. Each of the LED portion and the resistor portion includes an active layer and a clad layer successively deposited on a substrate of the chip. The substrate may be doped with one of P-type dopant and N-type dopant and the clad layer with the other of P and Y-type dopants. A first and second electrodes are formed on an exposed surface of the substrate and the clad layer of the LED portion respectively. A plurality of resistor electrodes are formed on the clad layer of the resistor portion. It is preferable to have different spacing between the resistor electrodes to form variable resistances.

Abstract: A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

Abstract: An integrated multicolor organic LED array formed by providing a negative layer and patterning a plurality of different color LED organic layers, one at a time, on the negative layer to form a plurality of different color LEDs in a plurality of areas of a selected array. A first color LED organic layer is patterned on the negative layer in first areas and to define additional areas for additional LEDs laterally separated from the first color LEDs and a final color LED organic layer is deposited in final areas and on previously patterned layers to form a plurality of final color LEDs. Transparent positive contacts are then formed on the final color LED layer in the first and final areas so as to form positive contacts to the first and the final color LEDs.

Abstract: A semiconductor light emitting diode (LED) has a pn junction, a pin junction or a similar junction formed in a polycrystalline layer with a large grain size. The LED is produced on an amorphous, ceramic, polycrystalline or monocrystalline substrate according to a crystalline growth method and light is emitted by injecting an electric current into the junction.

Abstract: Apparatus including a diamond semiconductor material bipolar transistor having associated therewith a distally disposed iso-collector. The iso-collector, when operated with a suitable voltage, provides a communicating electric field to the bipolar transistor collector which, in concert with a voltage coupled to the transistor base places the apparatus in an ON mode to induce electrons to be emitted from the collector and to be subsequently collected at the iso-collector. An iso-base is optionally, distally disposed relative to the base of the bipolar transistor.

Abstract: A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Abstract: A semiconductor infrared emitting device is fabricated from an n-type gallium arsenide substrate, an n-type gallium arsenide layer on the top surface of the substrate, a p-type gallium arsenide layer formed on the n-type gallium arsenide layer for forming a p-n junction therebetween, and electrodes provided on the p-type gallium arsenide layer and the reverse surface of the substrate for applying a bias voltage to the p-n junction, and the side surface of the substrate declines from the cleavage surface of the gallium arsenide substrate so that the incident angle of infrared varies at the crystal surfaces, thereby allowing the infrared to be radiated from the semiconductor infrared emitting device.

Abstract: A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

Abstract: A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.

Abstract: A light-emitting diode print head having a narrow LED array chip wherein the constituent LEDs of the array are arranged in a zigzag formation and driven using a differential timing arrangement that compensates for the offset of alternate LEDs in the printing line. The LED array comprises a plurality of light-emitting elements arrayed in a staggered configuration of odd and even numbered elements in parallel rows extending in a first, print line direction and a plurality of electrodes connected to the corresponding light-emitting elements and arranged in a mutually alternating orientation extending between the parallel rows at right-angles to the first direction and forming parallel rows of odd and even numbered electrode terminals interleaved between the even and odd numbered light-emitting elements, respectively.