Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: A variety of light-emitting devices for general illumination utilizing solid state light sources (e.g., light emitting diodes) are disclosed. In general, the devices include a scattering element in combination with an extractor element. The scattering element, which may include elastic and/or inelastic scattering centers, is spaced apart from the light source element. Opposite sides of the scattering element have asymmetric optical interfaces, there being a larger refractive index mismatch at the interface facing the light emitting element than the interface between the scattering element and the extractor element. Such a structure favors forward scattering of light from the scattering element. In other words, the system favors scattering out of the scattering element into the extractor element over backscattering light towards the light source element.

Abstract: A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15° and not more than 50°.

Abstract: A light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor.

Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Abstract: An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: A method of micro-devices transfer comprising following steps of: providing a flexible carrier including a plurality of grooves which are designed in positions corresponding one-to-one to a plurality of target surface portions of an outer surface of a target member, each of the grooves has an opening in a first surface of the flexible carrier; applying at least one external force to the flexible carrier such that the opening of each of the grooves is enlarged; placing a plurality of micro-devices in the grooves respectively; releasing the at least one external force such that the micro-devices are held by the grooves of the flexible carrier and auto-aligned in positions corresponding one-to-one to the target surface portions of the outer surface of the target member; aligning and bonding the micro-devices to the target surface portions of the outer surface of the target member; and removing the flexible carrier.

Abstract: A chip-scale packaging (CSP) light-emitting device (LED) is provided with an electrode polarity identifier, and includes a light-emitting semiconductor chip and a packaging structure. A first horizontal direction and a perpendicular second horizontal direction are specified on a semiconductor-chip-upper surface. The packaging structure covers the semiconductor-chip-upper surface, a first semiconductor-chip-side surface and a second semiconductor-chip-side surface of the light-emitting semiconductor chip, and includes a first package-side surface and a second package-side surface. A first region is between the first package-side surface and the first semiconductor-chip-side surface, and a second region is between the second package-side surface and the second semiconductor-chip-side surface, wherein an area of the first region is different from an area of the second region.

Abstract: The invention describes a light conversion device having a light converter, which is adapted to convert primary light to converted light, so that a peak emission wavelength of the converted light is in a longer wavelength range than a peak emission wavelength of the primary light. The light conversion device also has a reflective structure coupled to at least a part of a coupling surface of the light converter, where the reflective structure is a narrowband reflector arranged to reflect at least some of the primary light impinging on the reflective structure and to transmit at least some of the converted light impinging on the reflective structure.

Abstract: Multi-phase polymer films containing quantum dots (QDs) are described herein. The films have domains of primarily hydrophobic polymer and domains of primarily hydrophilic polymer. QDs, being generally more stable within a hydrophobic matrix, are dispersed primarily within the hydrophobic domains of the films. The hydrophilic domains tend to be effective at excluding oxygen.

Abstract: An LED module includes a first metal layer disposed on a base surface and an LED chip disposed on the first metal layer. The first metal layer includes a first end portion forming a contour away from the base surface, and a curved portion between a region overlapping the LED chip and the first end portion.

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1<n2 and n2>n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.

Abstract: A light emitting device package according to an embodiment may include first and second frames, a body, a light emitting device, first and second conductive parts, and first and second conductors. According to the embodiment, first and second frames may be spaced apart from each other and include first and second openings, respectively. The body may be disposed between the first and second frames. The light emitting device may be disposed on the body and include first and second bonding parts. The first and second conductive parts may be disposed under the first and second bonding parts. The first and second conductors may be disposed in the first and second openings, respectively. According to the embodiment, the first and second conductive parts may extend into the first and second openings from the first and second bonding parts, respectively, and the first and second conductors may be disposed between the first and second conductive parts and the first and second frames, respectively.

Abstract: Disclosed herein are a backlight unit and a display device using the same. In an embodiment, the backlight unit includes a substrate, at least one light source on the substrate, a lenses placed over the light source, a reflection sheet in which at least one through hole corresponding to the lens is formed, and a reflection ring comprising an opening portion corresponding to the at least one light source, and placed between the lens and the substrate. In accordance with an embodiment of the present invention, luminance uniformity of the backlight unit can be improved because the reflection ring surrounding the light source is included.

Abstract: A micro light emitting diode (LED), including a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and configured to provide light; a first side surface including a vertical side surface of the first semiconductor layer; a second side surface tilted with respect to the first side surface, and including a first tilted side surface of the active layer and a second tilted side surface of the second semiconductor layer; an insulating layer arranged to surround the first side surface and the second side surface; and a reflective layer arranged to partially surround the insulating layer in an area of the insulating layer corresponding to the second side surface.

Abstract: A luminophore may have the general empirical formula X3A7Z3O11:E, where: X=Mg, Ca, Sr, Ba, and/or Zn; A=Li, Na, K, Rb, Cs, Cu, and/or Ag; Z=Al, Ga, and/or B; and E=Eu, Ce, Yb, and/or Mn.

Abstract: A lighting device is provided. The lighting device includes a carrier, a light-emitting diode chip, and a wavelength up-conversion structure. The light-emitting diode chip is disposed on the carrier and is configured to emit a first light, which has a peak wavelength between 800 nm and 1000 nm. The wavelength up-conversion structure is disposed on the light-emitting diode chip and is configured to convert part of the first light into a second light, which has a converted spectrum between 400 nm and 700 nm.

Abstract: A flexible display device includes: a bendable display panel; a protective layer on a surface of the display panel; and an elastic layer on the first surface of the protective layer. The protective layer has a groove in a first surface thereof, and the elastic layer is in the groove in the protective layer.

Abstract: Provided are a method for manufacturing wavelength conversion members that enables manufacturing of wavelength conversion members having a high light extraction efficiency and suppression of material loss, a wavelength conversion member obtained by the method, and a light-emitting device.

Abstract: Provided is a wavelength conversion member that can be adjusted in chromaticity readily and with high accuracy and a production method for the wavelength conversion member. A wavelength conversion member 1 having a first principal surface 1a and a second principal surface 1b opposed to each other includes a glass matrix 2 and phosphor particles 3 disposed in the glass matrix 2, wherein a concentration of the phosphor particles 3 in the first principal surface 1a is higher than a concentration of the phosphor particles 3 in a portion 20 ?m inward from the first principal surface 1a, a concentration of the phosphor particles 3 in the second principal surface 1b is lower than a concentration of the phosphor particles 3 in a portion 20 ?m inward from the second principal surface 1b, and the concentration of the phosphor particles 3 in the first principal surface 1a is higher than the concentration of the phosphor particles 3 in the second principal surface 1b.

Abstract: A nano-structure layer is disclosed. The nano-structure layer includes an array of nano-structure material configured to receive a first light beam at a first angle of incidence and to emit the first light beam at a second angle greater than the first angle, the nano-structure material each having a largest dimension of less than 1000 nm.

Abstract: The disclosure discloses a method for manufacturing light-emitting diode (LED) chips. The manufacturing method includes: providing a plurality of LED elements; randomly mixing the plurality of LED elements; performing a mesa process on the plurality of LED elements; and forming at least one pair of electrodes on the plurality of LED elements. An electronic device includes the LED chips.

Abstract: The present disclosure provides an image sensor including a substrate (400) and at least one pixel unit. The pixel unit comprises a photodetector (401) arranged in the substrate, a photosensitive surface of the photodetector facing a back surface of the substrate to generate a charge upon receiving an incident light from the back surface of the substrate, a spherical crown structure (406) arranged on the substrate and located on an opposite surface of the photosensitive surface, a conformal dielectric layer (420) arranged on the spherical crown structure and used to generate a dielectric-layer reflective light when the incident light reaches the conformal dielectric layer, and a reflective layer (430) arranged on the conformal dielectric layer and used to generate a reflective-layer reflective light when the incident light reaches the reflective layer. In this way, an absorption ratio for the incident light is increased, thereby improving signal quality of an image.

Abstract: A confocal range sensing (CRS) system is provided including a wavelength detector, source light configuration, and one or more measurement channels. Each measurement channel is configured to sense a respective distance to a workpiece surface and includes a confocal detection aperture and confocal light source aperture. The source light configuration includes first and second phosphor compositions, a wavelength combining configuration, and a shared source light path. The first and second phosphor compositions are located in separate respective first and second phosphor regions. As part of workpiece height measurement operations, the first and second phosphor compositions emit first and second emitted light, respectively, to the wavelength combining configuration which outputs first and second emitted light along the shared source light path as source light (i.e.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.

Abstract: A flip-chip light-emitting module includes a thermal dissipation substrate, a package assembly, and a light-emitting chip. The package assembly includes a frame surrounding the thermal dissipation substrate, and a lens unit disposed on the frame. The frame includes a conductive path. The light-emitting chip is disposed on the thermal dissipation substrate, and includes a top conductive contact and a light-emitting surface at the same side. The top conductive contact is electrically connected with the conductive path by a conductor.

Abstract: A light emitting element according to an embodiment includes: a light emitting portion mounted on a PCB and configured to emit light; a light shield portion spaced from the PCB and having an opening that is formed at a location corresponding to the light emitting portion and passes light emitted from the light emitting portion; a sealing portion positioned between the light shield portion and the PCB and configured to prevent light emitted from the light emitting portion from leaking between the light shield portion and the PCB; and a transmission portion contacting one surface of the light shield portion and configured to transmit light, the one surface facing a direction away from the light emitting portion, wherein the opening has an inclined surface that is an outer circumferential surface located at one end of the opening in the direction away from the light emitting portion and widened in the direction away from the light emitting portion such that spread of light that passed through the opening is prev

Abstract: A display device having a light-emitting device is provided. The display device can include a buffer insulating layer disposed on a path of light emitted from the light-emitting device. The buffer insulating layer can have a stacked structure of a first buffer insulating layer having the refractive index which decreases in a direction away from the light-emitting device, and a second buffer insulating layer having the refractive index which increases in a direction away from the light-emitting device. Thus, in the display device, the unintended constructive and destructive interference of the light emitted from the light-emitting device can be prevented. Therefore, in the display device, the luminous efficacy can be increased, and the variation of color coordinates can be prevented.

Abstract: A semiconductor light emitting device includes a light emitting diode (LED) chip, a recipient luminophoric medium on the LED chip, a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned surface that is configured to reduce a variation in a color point of a light emitted by the semiconductor light emitting device as a function of an angle off an optical axis of the LED chip.

Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

Abstract: A circuit board according to the present disclosure includes a substrate, a conductor layer arranged on the substrate, a reflective layer arranged on the conductor layer, and a silicone-resin layer arranged on the substrate. The silicone-resin layer is in contact with the conductor layer and the reflective layer. The silicone-resin layer contains equal to or more than 45% by mass of a plurality of fillers. A first filler whose aspect ratio is larger than 5 occupies equal to or more than 5% of 100% of a total number of the fillers.

Abstract: A method for marking a product (1) with a photoluminescent mark, said mark comprising a photoluminescent portion (10) which is transparent under normal light conditions and revealed by photoluminescence under UV illumination, said mark further comprising a non photoluminescent portion (9) which is transparent under normal light conditions as well s under UV illumination, said method comprising: deposing on said product a stack, said stack comprising alternatively layers (2,4) such as AlN, with a thickness of less than 1 micron and layers (3) of a second material, such as GaN with a thickness of less than 10 nm; raising the transparency of said non photoluminescent portion (10) with a deposition of transparent material (6) or incorporation of ions into said non photoluminescent portions.

Abstract: Embodiments relate to a method for fabricating a light-emitting-diode (LED). A metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask to define individual LEDs.

Abstract: A light-emitting device includes a substrate, an electrode, a light-emitting element, a variable light absorbing layer, and a sealing body. The electrode is formed on the substrate. The light-emitting element is disposed on the substrate and electrically connected to the electrode. The variable light absorbing layer is formed so as to cover the electrode on the substrate. The variable light absorbing layer contains a plurality of metal oxide particles that change a light absorption property by irradiation with an ultraviolet light. The sealing body is formed on the substrate so as to seal the light-emitting element. The sealing body has translucency to a light emitted from the light-emitting element.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.

Abstract: Disclosed herein are a number of dielectric pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic array produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction. The aperiodic array can be formed, attached or placed on a converting material, such as, phosphor, to restrict emission to within the angular cone of extraction. The phosphor could be part of a converting illumination device, such as a phosphor coated light emitting diode, or a laser activated remote phosphor converting device.

Abstract: Provided is a light-emitting device that makes it possible to emit, with high efficiency, light having higher uniformity. The light-emitting device includes a light source, a wavelength conversion unit, and a wall member. The light source is disposed on a substrate. The wavelength conversion unit includes a wavelength conversion member and a transparent member that contains the wavelength conversion member therein. The wavelength conversion member is disposed to face the light source in a thickness direction and converts first wavelength light from the light source to second wavelength light. The wall member is provided on a substrate and surrounds the light source in a plane that is orthogonal to the thickness direction. A region occupied by the wavelength conversion member is wider than a region surrounded by the wall member, and entirely overlaps with the region surrounded by the wall member in the thickness direction.

Abstract: A liquid crystal display includes: a backlight layer, a filter layer, and an image display element. The backlight layer is formed with a first light transmitting hole. The filter layer is formed with a colorless region corresponding to the first light transmitting hole. The image display element is disposed at the first light transmitting hole, and light of the image display element is projected on the liquid crystal display and corresponds to the colorless region. The liquid crystal display can realize the full screen display effect, and image capturing functions of the lens suitable for the full screen display.

Abstract: Provided is a wavelength converting member and a method of producing the same. Proposed is a wavelength converting member including: a fluorescent material containing at least one kind selected from a nitride-based fluorescent material and an oxynitride-based fluorescent material; and an aluminate containing at least one kind selected from the group consisting of a rare earth aluminate and an alkaline earth metal aluminate. Further, a method of producing a wavelength converting member, including: preparing a molded body obtained by mixing a fluorescent material containing at least one kind selected from a nitride-based fluorescent material and an oxynitride-based fluorescent material and an aluminate containing at least one kind selected from the group consisting of a rare earth aluminate and an alkaline earth metal aluminate; and sintering the molded body to obtain a wavelength converting member containing the fluorescent material and the aluminate, is proposed.

Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1<Eg2<Eg3. In addition, Eg3 is greater than an energy band gap of the P-type electron-blocking layer.

Abstract: The method of manufacturing a light emitting element includes: providing a wafer including a sapphire substrate and a semiconductor structure; scanning the wafer to irradiate laser light into the substrate to form modified regions for cleaving the wafer into light emitting elements having a hexagonal shape in a top view; and cleaving the wafer. The scanning of the wafer includes: a first scanning to form first modified regions along a first direction parallel to first and second sides of the hexagonal shape, a second scanning, and a third scanning. The first scanning includes a first irradiation where laser light is scanned from a first end side of the first side to a first location between first and second ends of the first side, and a second irradiation where laser light is scanned from a second end side to a second location between the second and first ends.

Abstract: In a micro light emitting element, a first metal film electrically connected to a second conductive layer is disposed on a surface on an opposite side of a light emitting surface side. The first metal film covers the second conductive layer. A first inclined angle of a first conductive layer side surface from a slope formed around a light emission layer to the light emitting surface is larger than a second inclined angle of the slope. The slope and the first conductive layer side surface are covered together by a second metal film. A first transparent insulating film is disposed between the slope and the second metal film.

Abstract: A sensor device (100) comprises an emitter device (106) arranged to emit electromagnetic radiation and having an emission region associated therewith. The sensor device (100) also comprises a detector device (108) arranged to receive electromagnetic radiation and having a detection region associated therewith, and an optical system (122). The emission region is spaced at a predetermined distance from the detection region. The optical system (122) defines a plurality of principal rays, a number of the plurality of principal rays intersecting the detection region. The number of the plurality of principal rays also intersect the emission region.

Abstract: The present invention relates to a micro Light Emitting Diode (LED) matrix array package, including: a plurality of light emitting devices including a base substrate and a semiconductor laminated layer formed on the base substrate; a plurality of solder balls formed on the semiconductor laminated layer of the plurality of light emitting devices, respectively; a molding member configured to surround the light emitting devices and the solder balls; and a circuit board formed on the molding member, in which upper surfaces of the solder balls are exposed from the molding member, the circuit board includes a contact layer consisted of a metal pattern layer electrically connected with the plurality of solder balls exposed from the molding member and an insulating layer adjacently disposed to the metal pattern layer, and a thickness from the base substrate of each of the plurality of light emitting devices to an upper surface of each of the exposed solder balls is the same each other.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

Abstract: A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.