Abstract: Disclosed is an LED module including a cover part, a board part connected to a front portion of the cover part, a light emitting part electrically connected to the board part, positioned on a front portion of the board part, and that emits light through a side surface thereof, a lens part surrounding the side surface of the light emitting part and positioned on the front portion of the board part, and a panel part, into which the lens part is inserted, having an optic part having a fine boss shape on an outer surface thereof, and positioned on the front portion of the board part.

Abstract: A device includes insulation regions over portions of a semiconductor substrate, and a III-V compound semiconductor region over top surfaces of the insulation regions, wherein the III-V compound semiconductor region overlaps a region between opposite sidewalls of the insulation regions. The III-V compound semiconductor region includes a first and a second III-V compound semiconductor layer formed of a first III-V compound semiconductor material having a first band gap, and a third III-V compound semiconductor layer formed of a second III-V compound semiconductor material between the first and the second III-V compound semiconductor layers. The second III-V compound semiconductor material has a second band gap lower than the first band gap. A gate dielectric is formed on a sidewall and a top surface of the III-V compound semiconductor region. A gate electrode is formed over the gate dielectric.

Abstract: A disclosed Zener diode includes, in one embodiment, an anode region and a cathode region that form a shallow sub-surface latitudinal Zener junction. The Zener diode may further include an anode contact region interconnecting the anode region with a contact located away from the Zener junction region and a silicide blocking structure overlying the anode region. The Zener diode may also include one or more shallow, sub-surface longitudinal p-n junctions at the junctions between lateral edges of the cathode region and the adjacent region. The adjacent region may be a heavily doped region such as the anode contact region. In other embodiments, the Zener diode may include a breakdown voltage boost region comprising a more lightly doped region located between the cathode region and the anode contact region.

Abstract: Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

Abstract: A disclosed Zener diode includes, in one embodiment, an anode region and a cathode region that form a shallow sub-surface latitudinal Zener junction. The Zener diode may further include an anode contact region interconnecting the anode region with a contact located away from the Zener junction region and a silicide blocking structure overlying the anode region. The Zener diode may also include one or more shallow, sub-surface longitudinal p-n junctions at the junctions between lateral edges of the cathode region and the adjacent region. The adjacent region may be a heavily doped region such as the anode contact region. In other embodiments, the Zener diode may include a breakdown voltage boost region comprising a more lightly doped region located between the cathode region and the anode contact region.

Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

Abstract: Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

Abstract: The present invention provides a tunnel diode and a method for manufacturing thereof. The tunnel diode comprises a p-doped semiconductor region and an n-doped semiconductor region forming a pn-junction at least partly within a nanowire where semiconductor materials on different sides of the pn-junction are different such that a heterojuction is formed. The materials of the nanowire may be compound semiconductor materials. The heterojunction tunnel diode can be of type-I (Straddling gap), type-II (Staggered gap) or type-III (Broken gap).

Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

Abstract: A high-frequency metal-insulator-metal (MIM) type diode is constructed as a bridge suspended above a substrate to significantly reduce parasitic capacitances affecting the operation frequency of the diode thereby permitting improved high-frequency rectification, demodulation, or the like.

Abstract: A high-frequency metal-insulator-metal (MIM) type diode is constructed as a bridge suspended above a substrate to significantly reduce parasitic capacitances affecting the operation frequency of the diode thereby permitting improved high-frequency rectification, demodulation, or the like.

Abstract: Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.

Abstract: The present invention is directed to a diode with an asymmetric silicon germanium anode and methods of making same. In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N-doped silicon cathode formed in the semiconducting substrate, a first conductive contact that is conductively coupled to the anode and a second conductive contact that is conductively coupled to the cathode.

Abstract: A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant.

Abstract: Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

Abstract: Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

Abstract: Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.

Abstract: In one embodiment, a mandrel and an outer dummy spacer may be employed to form a first conductivity type region. The mandrel is removed to form a recessed region wherein a second conductivity type region is formed. In another embodiment, a mandrel is removed from within shallow trench isolation to form a recessed region, in which an inner dummy spacer is formed. A first conductivity type region and a second conductivity region are formed within the remainder of the recessed region. An anneal is performed so that the first conductivity type region and the second conductivity type region abut each other by diffusion. A gate electrode is formed in self-alignment to the p-n junction between the first and second conductivity regions. The p-n junction controlled by the gate electrode, which may be sublithographic, constitutes an inventive tunneling effect transistor.

Abstract: A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which is different from other conventional quantum transistors that require other, completely different process technologies and operating conditions. To accomplish this, the GRTD uses a body of a first conduction type with a first electrode region and a second electrode region (each of a second conduction type) formed in the body. A channel is located between the first and second electrode regions in the body. A barrier region of the first conduction type is formed in the channel (with the doping level of the barrier region being greater than the doping level of the body), and a quantum well region of the second conduction type formed in the channel. Additionally, the barrier region is located between each of the first and second electrode regions and the quantum well region.

Abstract: Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

Abstract: In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to the first semiconductor region which has a second conductivity type. The third semiconductor region is adjacent to the second semiconductor region which has the second conductivity type. The gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. When the first semiconductor region is biased in a first direction, an inversion region forms in the second semiconductor region. The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region. When the first semiconductor region is biased a second direction, the semiconductor rectifier device functions as a reverse-biased PIN diode.

Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

Abstract: Overmolded lenses and certain fabrication techniques are described for LED structures. In one embodiment, thin YAG phosphor plates are formed and affixed over blue LEDs mounted on a submount wafer. A clear lens is then molded over each LED structure during a single molding process. The LEDs are then separated from the wafer. The molded lens may include red phosphor to generate a warmer white light. In another embodiment, the phosphor plates are first temporarily mounted on a backplate, and a lens containing a red phosphor is molded over the phosphor plates. The plates with overmolded lenses are removed from the backplate and affixed to the top of an energizing LED. A clear lens is then molded over each LED structure. The shape of the molded phosphor-loaded lenses may be designed to improve the color vs. angle uniformity. Multiple dies may be encapsulated by a single lens. In another embodiment, a prefabricated collimating lens is glued to the flat top of an overmolded lens.

Abstract: A memory cell and method for making a memory cell in accordance with embodiments of the present invention includes two or more tunnel diodes, a loading system, and a driving system. The two or more tunnel diodes are coupled together, the loading system is coupled to the tunnel diodes and the driving system is coupled to the tunnel diodes and the loading system. The driving system drives a sense node from the tunnel diodes, the loading system, and the driving system between at least three or more substantially stable logic states.

Abstract: A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal drive-in process is then performed to diffuse the implanted nitrogen atoms across the silicon oxide layer.