With A Multi- Emitter, E.g., Interdigitated, Multicellular, Distributed (epo) Patents (Class 257/E21.381)
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Patent number: 8896011Abstract: AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate.Type: GrantFiled: March 18, 2008Date of Patent: November 25, 2014Assignee: Seoul Viosys Co., Ltd.Inventors: Yeo Jin Yoon, Jong Kyu Kim, Jun Hee Lee
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Patent number: 8803276Abstract: A structure and method of fabricating electrostatic discharge (EDS) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a NMOSFET or a n-p-n with a PMOSFET within a triple well. The lateral bipolar preferably includes diodes at the I/O and/or the VDDs of the circuitry.Type: GrantFiled: November 6, 2013Date of Patent: August 12, 2014Assignee: International Business Machines CorporationInventors: Shunhua Chang, Kiran V. Chatty, Robert J. Gauthier, Mujahid Muhammad
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Patent number: 8735918Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: December 2, 2010Date of Patent: May 27, 2014Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 8603885Abstract: Bipolar transistors with tailored response curves, as well as fabrication methods for bipolar transistors and design structures for BiCMOS integrated circuits. The bipolar transistor includes a first section of a collector region implanted with a first dopant concentration and a second section of the collector region implanted with a second dopant concentration that is higher than the first dopant concentration. A first emitter is formed in vertical alignment with the first section of the collector region. A second emitter is formed in vertical alignment with the second section of the collector region.Type: GrantFiled: January 4, 2011Date of Patent: December 10, 2013Assignee: International Business Machines CorporationInventors: Ramana M. Malladi, Kim M. Newton
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Patent number: 8597993Abstract: A structure and method of fabricating electrostatic discharge (EDS) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a NMOSFET or a n-p-n with a PMOSFET within a triple well. The lateral bipolar preferably includes diodes at the I/O and/or the VDDs of the circuitry.Type: GrantFiled: March 14, 2008Date of Patent: December 3, 2013Assignee: International Business Machines CorporationInventors: Shunhua Chang, Kiran V. Chatty, Robert J. Gauthier, Jr., Mujahid Muhammad
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Patent number: 8354733Abstract: According to one disclosed embodiment, a power semiconductor package includes an insulated-gate bipolar transistor (IGBT) residing on a package substrate, where the IGBT includes a plurality of solderable front metal (SFM) coated emitter segments situated atop the IGBT and connected to an emitter of the IGBT. The power semiconductor package also includes a conductive clip coupling the plurality of SFM coated emitter segments to an emitter pad on the package substrate. Additionally, the power semiconductor package includes a gate pad on the package substrate coupled to a gate of the IGBT, a collector pad on the package substrate situated under the IGBT and coupled to a collector of the IGBT, and an emitter terminal, a collector terminal and a gate terminal of the package substrate that are routed to the emitter pad, collector pad, and gate pad, respectively.Type: GrantFiled: March 24, 2011Date of Patent: January 15, 2013Assignee: International Rectifier CorporationInventor: Hsueh-Rong Chang
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Patent number: 8283682Abstract: The present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and are symmetric with respect to those of adjacent another of the light emitting cells.Type: GrantFiled: May 19, 2011Date of Patent: October 9, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Yeo Jin Yoon, Jong Kyu Kim, Jun Hee Lee
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Publication number: 20120168907Abstract: Bipolar transistors with tailored response curves, as well as fabrication methods for bipolar transistors and design structures for BiCMOS integrated circuits. The bipolar transistor includes a first section of a collector region implanted with a first dopant concentration and a second section of the collector region implanted with a second dopant concentration that is higher than the first dopant concentration. A first emitter is formed in vertical alignment with the first section of the collector region. A second emitter is formed in vertical alignment with the second section of the collector region.Type: ApplicationFiled: January 4, 2011Publication date: July 5, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ramana M. Malladi, Kim M. Newton
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Patent number: 8097889Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: January 12, 2009Date of Patent: January 17, 2012Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 8084774Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: January 12, 2009Date of Patent: December 27, 2011Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 7897982Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: June 16, 2008Date of Patent: March 1, 2011Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 7829358Abstract: Embodiments of an LED disclosed has an emitter layer shaped to a controlled depth or height relative to a substrate of the LED to maximize the light output of the LED and to achieve a desired intensity distribution. In some embodiments, the exit face of the LED may be selected to conserve radiance. In some embodiments, shaping the entire LED, including the substrate and sidewalls, or shaping the substrate alone can extract 100% or approximately 100% of the light generated at the emitter layers from the emitter layers. In some embodiments, the total efficiency is at least 90% or above. In some embodiments, the emitter layer can be shaped by etching, mechanical shaping, or a combination of various shaping methods. In some embodiments, only a portion of the emitter layer is shaped to form the tiny emitters. The unshaped portion forms a continuous electrical connection for the LED.Type: GrantFiled: February 6, 2009Date of Patent: November 9, 2010Assignee: Illumitex, Inc.Inventors: Dung T. Duong, Paul N. Winberg, Matthew R. Thomas, Elliot M. Pickering, Muhammad Khizar
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Patent number: 7768020Abstract: Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 D, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.Type: GrantFiled: March 13, 2007Date of Patent: August 3, 2010Assignee: Seoul Opto Device Co., Ltd.Inventors: Dae Won Kim, Yeo Jin Yoon, Dae Sung Kal
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Patent number: 7732825Abstract: Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 ?m, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.Type: GrantFiled: February 1, 2010Date of Patent: June 8, 2010Assignee: Seoul Opto Device Co., Ltd.Inventors: Dae Won Kim, Yeo Jin Yoon, Dae Sung Kal
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Patent number: 7667237Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: June 4, 2009Date of Patent: February 23, 2010Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 7646031Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: June 5, 2009Date of Patent: January 12, 2010Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 7615793Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: January 12, 2009Date of Patent: November 10, 2009Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 7473983Abstract: In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternating doped regions, wherein the plurality of alternating doped regions alternate in a lateral direction from a net first conductivity to a net second conductivity, and a collector contact in electrical contact with the collector. The bipolar transistor can also comprise a heavily doped buried layer below the collector, a base in electrical contact with a base contact, wherein the base is doped to a net second conductivity type and wherein the base spans a portion of the plurality of alternating doped regions, and an emitter disposed within the base, the emitter doped to a net first conductivity, wherein a portion of the alternating doped region under the emitter is doped to a concentration of less than about 3×1012 cm?2.Type: GrantFiled: August 8, 2007Date of Patent: January 6, 2009Assignee: Intersil Americas Inc.Inventor: James Douglas Beasom
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Patent number: 7417259Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.Type: GrantFiled: August 28, 2003Date of Patent: August 26, 2008Assignee: Seoul Semiconductor Co., Ltd.Inventors: Shiro Sakai, Jin-Ping Ao, Yasuo Ono
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Patent number: 7285469Abstract: In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternating doped regions, wherein the plurality of alternating doped regions alternate in a lateral direction from a net first conductivity to a net second conductivity, and a collector contact in electrical contact with the collector. The bipolar transistor can also comprise a heavily doped buried layer below the collector, a base in electrical contact with a base contact, wherein the base is doped to a net second conductivity type and wherein the base spans a portion of the plurality of alternating doped regions, and an emitter disposed within the base, the emitter doped to a net first conductivity, wherein a portion of the alternating doped region under the emitter is doped to a concentration of less than about 3×1012 cm?2.Type: GrantFiled: September 2, 2005Date of Patent: October 23, 2007Assignee: Intersil AmericasInventor: James Douglas Beasom
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Patent number: RE43042Abstract: In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternating doped regions, wherein the plurality of alternating doped regions alternate in a lateral direction from a net first conductivity to a net second conductivity, and a collector contact in electrical contact with the collector. The bipolar transistor can also comprise a heavily doped buried layer below the collector, a base in electrical contact with a base contact, wherein the base is doped to a net second conductivity type and wherein the base spans a portion of the plurality of alternating doped regions, and an emitter disposed within the base, the emitter doped to a net first conductivity, wherein a portion of the alternating doped region under the emitter is doped to a concentration of less than about 3×1012 cm?2.Type: GrantFiled: January 6, 2011Date of Patent: December 27, 2011Assignee: Intersil Americas Inc.Inventor: James D. Beasom
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Patent number: RE44140Abstract: In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternating doped regions, wherein the plurality of alternating doped regions alternate in a lateral direction from a net first conductivity to a net second conductivity, and a collector contact in electrical contact with the collector. The bipolar transistor can also comprise a heavily doped buried layer below the collector, a base in electrical contact with a base contact, wherein the base is doped to a net second conductivity type and wherein the base spans a portion of the plurality of alternating doped regions, and an emitter disposed within the base, the emitter doped to a net first conductivity, wherein a portion of the alternating doped region under the emitter is doped to a concentration of less than about 3×1012 cm?2.Type: GrantFiled: November 14, 2011Date of Patent: April 9, 2013Assignee: Intersil Americas Inc.Inventor: James D. Beasom