Abstract: The present invention discloses a bonding cavity structure and a bonding method, the bonding cavity structure comprises an upper carrier and a lower carrier, a gas-flow forming mechanism, which comprises multiple open-close integrated arms, the integrated arms are provided with multiple nozzles facing to wafer bonding surfaces, and the nozzles are switched to gas nozzles or vacuum suction nozzles, a closed space is formed by all the integrated arms closed together with the carriers, all the nozzle located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect, the wafers are not only subjected to thrust forces from backsides, but tension forces between the bonding surfac

Abstract: A touch display device can include an active area in which a plurality of subpixels each including a light emitting element are disposed, the active area including a plurality of first areas and at least one folding area between the plurality of first areas; an encapsulation layer disposed on the active area; a plurality of touch electrodes disposed on the encapsulation layer; and a touch insulation layer between the plurality of touch electrode and the encapsulation layer, in which the touch insulation layer has a pattern structure in an area where the plurality of touch electrodes are not disposed in the at least one folding area.

Abstract: A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

Abstract: Provided is a semiconductor package structure including a first die having a first bonding structure thereon, a second die having a second bonding structure thereon, a metal circuit structure, and a first protective structure. The second die is bonded to the first die such that a first bonding dielectric layer of the first bonding structure contacts a second bonding dielectric layer of the second bonding structure. The metal circuit structure is disposed over a top surface of the second die. The first protective structure is disposed within the top surface of the second die, and sandwiched between the metal circuit structure and the second die.

Abstract: Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

Abstract: An electronic device comprises a target substrate, a micro semiconductor structure array, a conductor array, and a connection layer. The micro semiconductor structure array is disposed on the target substrate. The conductor array corresponds to the micro semiconductor structure array, and electrically connects the micro semiconductor structure array to a pattern circuit of the target substrate. The conductors of the conductor array are independent from one another. Each conductor is an integrated member formed by eutectic bonding a conductive pad of the target substrate and a conductive electrode of the corresponding one of the micro semiconductor structures of the micro semiconductor structure array. The connection layer connects the micro semiconductor structures to the target substrate. The connection layer excludes a conductive material. The connection layer contacts and surrounds the conductors, so that the connection layer and the conductors together form a one-layer structure.

Abstract: A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.

Abstract: A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

Abstract: An electrical cable assembly amenable to implantation into a body includes a flexible cable. The flexible cable includes a dielectric substrate, a conductor lead for conducting an electrical signal, a conductive barrier layer, and an overmold layer. The conductor lead is embedded within and surrounded by the dielectric substrate. The conductive barrier layer surrounds the dielectric substrate and encases the dielectric substrate and conductor lead in a cavity. The conductive barrier layer is a continuous material layer that is neither braided nor spiral wrapped and provides a hermetic barrier formed of a metallic or inorganic material. The overmold layer provides one or more of mechanical protection or strain relief to the conductive barrier layer.

Abstract: An electronic package includes a first layer having a first surface, the first layer includes a first device having a first electrical node, and a first contact pad in electrical communication with the first electrical node and positioned within the first surface. The package includes a second layer having a second surface and a third surface, the second layer includes a first conductor positioned within the second surface and a second contact pad positioned within the third surface and in electrical communication with the first conductor. A first anisotropic conducting paste (ACP) is positioned between the first contact pad and the first conductor to electrically connect the first contact pad to the first conductor such that an electrical signal may pass therebetween.

Abstract: Disclosed are methods and apparatus for protecting dielectric films on microelectronic components from contamination associated with singulation, picking and handling of singulated microelectronic components from a wafer for assembly with other components.

Abstract: A method of forming a stacked field effect transistor (FET) circuit is provided. The method includes providing a first wafer and a second wafer, forming a first dielectric layer on a surface of the first wafer, forming a second dielectric layer on a surface of the second wafer, and bonding the first wafer to the second wafer at the first dielectric layer and the second dielectric layer.

Abstract: A position sensor employing silicon photodiodes formed from trapezoidal chips mounted on a printed circuit board detects angular positions of a rotor shaft within a galvanometer-based optical scanner.

Abstract: A method for transferring a micro device includes: preparing a carrier substrate with the micro device thereon in which an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head comprising a force-adjustable glue layer thereon; forming a liquid layer on a receiving substrate; reducing the grip force of the force-adjustable glue layer of the transfer head to be smaller than a force attaching the micro device to the receiving substrate; placing the micro device over the receiving substrate such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.

Abstract: Light emitting devices and methods for their manufacture are provided. According to one aspect, a light emitting device is provided that comprises a substrate having a recess, and an interlayer dielectric layer located on the substrate. The interlayer dielectric layer may have a first hole and a second hole, the first hole opening over the recess of the substrate. The light emitting device may further include first and second micro LEDs, the first micro LED having a thickness greater than the second micro LED. The first micro LED and the second micro LED may be placed in the first hole and the second hole, respectively.

Abstract: Various embodiments are related to substrates having one or more well structures with a trapezoidal cylinder shaped through hole via extending from the bottom of the well structure though the substrate.

Abstract: A chip package including an integrated circuit component, a thermal conductive layer, an insulating encapsulant and a redistribution circuit structure is provided. The integrated circuit component includes an amorphous semiconductor portion located at a back surface thereof. The thermal conductive layer covers the amorphous semiconductor portion of the integrated circuit component, wherein thermal conductivity of the thermal conductive layer is greater than or substantially equal to 10 W/mK. The insulating encapsulant laterally encapsulates the integrated circuit component and the thermal conductive layer. The redistribution circuit structure is disposed on the insulating encapsulant and the integrated circuit component, wherein the redistribution circuit structure is electrically connected to the integrated circuit component.

Abstract: A semiconductor device has a first conductive layer and a semiconductor die disposed adjacent to the first conductive layer. An encapsulant is deposited over the first conductive layer and semiconductor die. An insulating layer is formed over the encapsulant, semiconductor die, and first conductive layer. A second conductive layer is formed over the insulating layer. A first portion of the first conductive layer is electrically connected to VSS and forms a ground plane. A second portion of the first conductive layer is electrically connected to VDD and forms a power plane. The first conductive layer, insulating layer, and second conductive layer constitute a decoupling capacitor. A microstrip line including a trace of the second conductive layer is formed over the insulating layer and first conductive layer. The first conductive layer is provided on an embedded dummy die, interconnect unit, or modular PCB unit.

Abstract: A method of manufacturing a semiconductor device includes receiving a die including a top surface, a die pad exposed from the top surface, and sacrificial layer covering the top surface and the die pad; disposing the die on a substrate, disposing a molding surrounding the die and covering the sacrificial layer; removing a first portion of the molding and a portion of the sacrificial layer to expose a top surface of the sacrificial layer; removing a second portion of the molding to expose a sidewall of the sacrificial layer; and removing the sacrificial layer from the die.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: A package substrate for connecting together semiconductor devices with other semiconductor device packages. The package substrate includes an exposed core layer with at least one via exposing a conductive layer of the package substrate. A first portion of the package substrate may include a solder mask on top and bottom surfaces. A first semiconductor device may be connected to the first portion of the package substrate. Layers of a second portion of the package substrate are removed to expose a core layer and vias are created in the exposed core layer to expose the conductive layer. Conducive material at least partially filling the vias may be used to connect a semiconductor device package to the second portion of the package substrate. The semiconductor device packages may communicate through conductive layers in the package substrate. The package substrate may be used to connect the semiconductor packages to a motherboard.

Abstract: A method of manufacturing a semiconductor structure includes disposing a plurality of devices on a carrier; immersing the plurality of devices into a molding compound to dispose the molding compound between the plurality of devices; and removing the carrier from the plurality of devices and the molding compound, wherein a first surface of the molding compound adjacent to a plurality of active components over the plurality of devices includes a recessed portion recessed from one of first surfaces of the plurality of devices.

Abstract: An apparatus and method for facilitating the removal of layers from a die for an integrated circuit while maintaining the planarity of the surface of the die by avoiding rounding the corners and other edges of the die. A pocket is created in a sacrificial material, such that when the die is inserted into the pocket the edges of the die are contiguous with the walls of the pocket and a top surface of the die is coplanar with a top surface of the pocket. The sacrificial material may be the same material as the die. An adhesive substance is placed in the pocket, and the die is inserted into the pocket and against the adhesive substance which aids in retaining the die in the pocket. The layers may then be removed from the die and the sacrificial material around the die without rounding the edges of the die.

Abstract: According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

Abstract: A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.

Abstract: Disclosed are highly scalable fabrication methods for producing electronic circuits, devices, and systems. In one aspect, a fabrication method includes attaching an electronic component at a location on a substrate including a flexible and electrically insulative material; forming a template to encase the electronic component by depositing a material in a phase to conform on the surfaces of the electronic component and the substrate, and causing the material to change to solid form; and producing a circuit or electronic device by forming openings in the substrate to expose conductive portions of the electronic component, creating electrical interconnections coupled to at least some of the conductive portions in a selected arrangement on the substrate, and depositing a layer of an electrically insulative and flexible material over the electrical interconnections on the substrate to form a flexible base of the circuit, in which the produced circuit or electronic device is encased.

Abstract: Methods of bonding chips to a substrate and transfer wafers used for such bonding include bonding chips to a first support wafer by a first adhesive layer. The chips are bonded to a second support wafer by a second adhesive layer. Regions of the first adhesive layer are selectively weakened to decrease an adhesive strength in weakened regions. The weakened regions correspond to a subset of chips. The second support wafer is separated from the first wafer, such that the subset of chips in the weakened regions debond from the first support wafer. The subset of chips are bonded to a target substrate.

Abstract: A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.

Abstract: In an example, a dry film solder mask (DFSM) composite laminate material is disclosed. The DFSM composite laminate material includes a printed circuit board (PCB) laminate material, a cyclic compound chemically bonded to the PCB laminate material, and a DFSM material. The DFSM material is reversibly bonded to the PCB laminate material via the cyclic compound.

Abstract: A package may include a first chip having a first surface and a second surface opposite the first surface; a first redistribution line (RDL) coupled to the first surface of the first chip; a second chip having a first surface and a second surface opposite the first surface, the first surface of the second chip facing the first chip; a second RDL disposed between the first chip and the second chip and coupled to the first surface of the second chip; a conductive via laterally adjacent to the second chip, the conductive via coupled to the second RDL; and a molding compound disposed between the second chip and the conductive via.

Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in relation to a substrate. In some cases, embodiments include a substrate including a plurality of wells each having a sidewall where a through hole via extends from a bottom of at least one of the plurality of wells; and a post enhanced diode including a post extending from a top surface of a diode structure.

Abstract: A transducer baseplate includes a base, a protrusion extending from the base along a longitudinal axis, a pair of opposed transducer receptacles defined within the protrusion, and respective pressure plena. The pressure plena are separated by a plenum wall, each plenum being in fluid connection with an area external to the protrusion through a respective pressure line. The pressure lines provide a direct fluid path to their respective receptacles.

Abstract: A purpose of the present invention is to provide a semiconductor device that can restrain occurrence of partial discharge in evaluation of electric characteristics and can carry out failure analysis from the upper side of a measurement object. A semiconductor device according to the present invention includes: at least one electrode; a protective layer having at least one opening part provided such that a portion of the electrode is exposed at the opening part, and being formed to cover the other portion of the electrode excluding the portion of the electrode exposed at the opening part, the protective layer being insulative; and a conductive layer formed so as to cover the protective layer and the opening part and be directly connected to the electrode at the opening part.

Abstract: The present application provides methods, systems and devices for simultaneously bonding multiple semiconductor chips of different height profiles on a flexible substrate.

Abstract: An electronic device can comprise a first electronic module; a second electronic module; and a hermetic electric interconnect to hermetically couple them. The hermetic electric interconnect can comprise a bottom metal layer; a bottom insulating layer, deposited on the bottom metal layer to insulate the bottom metal layer; an interconnect metal layer, deposited on the bottom insulating layer, and deposited to form a bottom sealing ring; and patterned to form electrical connections between contact pads, and to form a middle sealing ring; a patterned top insulating layer, deposited on the interconnect metal layer to insulate the interconnect metal layer; and patterned to form feedthrough holes; and a top metal layer, deposited on the top insulating layer to start forming contacts by filling the feedthrough holes; and patterned to complete forming contacts through the feedthrough holes, to form a separate barrier layer, and to complete forming the top sealing ring.

Abstract: A semiconductor structure includes a plurality of devices, each of the plurality of devices includes a first surface disposed with an active component; and a molding disposed between the plurality of devices and including a first surface, wherein one of the plurality of devices has substantially different height from another one of the plurality of devices, and the first surface of the molding includes a recessed portion recessed from one of the first surfaces of the plurality of devices.

Abstract: In one embodiment of the invention, a system in package (SiP) is described which includes a plurality of device components with different form factors embedded within a molding compound layer. A surface for each of the device components is coplanar with a surface of the molding compound layer, and a single redistribution layer (RDL) formed on the coplanar surfaces of the molding compound layer and the plurality of device components. An active device die is electrically bonded to the single RDL directly vertically adjacent the plurality of device components. In an embodiment, the SiP is electrically connected to a circuit board with the active device die between the single RDL and the circuit board. In an embodiment, the SiP is electrically connected to a circuit board with the active device die over the single RDL and the circuit board.

Abstract: A semiconductor package includes a first semiconductor die surrounded by a molding compound. The semiconductor package further includes a first conductive pad on the first semiconductor die, wherein the first conductive pad is at a top metal level of the first semiconductor die. The semiconductor package further includes redistribution lines (RDLs) formed over the first conductive pad, wherein at least one RDL of the RDLs extends beyond the boundaries of the semiconductor die, and a portion of the at least one RDL contacts the first conductive pad, wherein a surface of the first conductive pad contacting the portion of the at least one RDL is at a different level than a surface of the molding compound under the at least one RDL extended beyond the boundaries of the first semiconductor die.

Abstract: A wiring board includes a substrate which has multiple opening portions and one or more boundary portions separating the opening portions, multiple electronic devices positioned in the opening portions of the substrate, respectively, a conductive pattern formed on a surface of the boundary portion, and an insulation layer formed on the substrate and the conductive pattern on the boundary portion of the substrate such that the insulation layer covers the electronic devices in the opening portions of the substrate. The boundary portion has a width which is in a range of approximately 0.05 to approximately 2.0 mm.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: A method includes forming one or more trenches in a first substrate, forming one or more vias in a second substrate, aligning at least a first trench in the first substrate with at least a first via in the second substrate, and sealing the first substrate to the second substrate by filling the first via and the first trench with solder material using injection molded soldering.

Abstract: A package for holding a plurality of heterogeneous integrated circuits includes a first chip having a first conductive pad and a first substrate including a first semiconductor, and a second chip having a second conductive pad and a second substrate including a second semiconductor. The second semiconductor is different from the first semiconductor. The package also includes a molding structure in which the first chip and the second chip are embedded, a conductive structure over the first chip and conductively coupled to the first conductive pad and over the second chip and conductively coupled to the second conductive pad, and a passivation layer over the conductive structure. The passivation layer comprises an opening defined therein which exposes a portion of the second chip.

Abstract: In a method for producing an electronic part mounting substrate wherein an electronic part 14 is mounted on one major surface (a surface to which the electronic part 14 is to be bonded) of the metal plate 10 of copper, or aluminum or the aluminum alloy (when a plating film 20 of copper is formed on the surface), the one major surface of the metal plate 10 (or the surface of the plating film 20 of copper) is surface-machined to be coarsened so as to have a surface roughness of not less than 0.4 ?m, and then, a silver paste is applied on the surface-machined major surface (or the surface-machined surface of the plating film 20 of copper) to arrange the electronic part 14 thereon to sinter silver in the silver paste to form a silver bonding layer 12 to bond the electronic part 14 to the one major surface of the metal plate 10 (or the surface of the plating film 20 of copper) with the silver bonding layer 12.

Abstract: A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment.

Abstract: A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.

Abstract: A method for fabricating an electronic device, and an electronic device in a stacked configuration, includes a rear face of an integrated-circuit chip that is fixed to a front face of a support wafer. A protective wafer is located facing and at a distance from the front face of the chip, and an infused adhesive is interposed between the chip and the protective wafer and located on a zone of the front face of the chip outside a central region of this front face. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. An obstruction barrier is arranged between the chip and the protective wafer and is disposed outside the central region of the front face of the chip. An encapsulation ring surrounds the chip, the protective wafer and the obstruction barrier.

Abstract: A method for fabricating a package structure is provided, which includes the steps of: providing an encapsulant encapsulating at least an electronic element; forming a shaping layer on a surface of the encapsulant, wherein the shaping layer has at least an opening exposing a portion of the surface of the encapsulant; forming at least a through hole corresponding in position to the opening and penetrating the encapsulant; and forming a conductor in the through hole. The shaping layer facilitates to prevent deformation of the through hole.

Abstract: A sealant composition includes a curable sealing resin, and a plurality of microcapsules dispersed in the sealing resin. Each of the plurality of microcapsules includes a self-curable healing agent and a capsule coating film encapsulating the healing agent.

Abstract: Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape.

Abstract: An electronic package includes a first layer having a first surface, the first layer includes a first device having a first electrical node, and a first contact pad in electrical communication with the first electrical node and positioned within the first surface. The package includes a second layer having a second surface and a third surface, the second layer includes a first conductor positioned within the second surface and a second contact pad positioned within the third surface and in electrical communication with the first conductor. A first anisotropic conducting paste (ACP) is positioned between the first contact pad and the first conductor to electrically connect the first contact pad to the first conductor such that an electrical signal may pass therebetween.