Abstract: A semiconductor device includes: a semiconductor substrate having an active surface and a back surface; an integrated circuit formed on the active surface; a feedthrough electrode penetrating the semiconductor substrate, and projecting from the active surface and the back surface; a first resin layer formed on the active surface, having a thickness greater than a height of a portion of the feedthrough electrode that projects from the active surface, and having an opening portion for exposing at least a portion of the feedthrough electrode; a wiring layer which is formed on the first resin layer, and which is connected to the feedthrough electrode through the opening portion; and an external connecting terminal connected to the wiring layer.

Abstract: One embodiment of the invention relates to an electronic component having stacked semiconductor chips, and to a panel for production of the component. In one case, the stack has a flat conductor structure with a chip island on which a stacked semiconductor chip is arranged, while a first semiconductor chip is located underneath it. The chip island is surrounded by flat conductors which have contact pillars. These contact pillars have pillar contact pads which, together with the active upper face of the first semiconductor chip and the upper face areas of a plastic encapsulation compound form a coplanar overall upper face.

Abstract: An electronic device may include first, second, and third substrates wherein the second electronic substrate is between the first and second electronic substrates. A first electrical and mechanical connection may be provided between the first and third electronic substrates, and a second electrical and mechanical connection may be provided between the second and third electronic substrates. In addition or in an alternative, an electronic device may include a printed circuit board, a first electronic substrate on the printed circuit board, a second electronic substrate on the first electronic substrate, and a third electronic substrate on the second electronic substrate. More particularly, the first electronic substrate may be between the printed circuit board and the second electronic substrate, and the second electronic substrate may be between the first and third electronic substrates.

Abstract: In certain embodiments, a lead frame includes a paddle, a plurality of inner leads, first outer leads, and a second outer lead. The plurality of inner leads can be arranged at a side face of the paddle. The first outer leads can extend from the inner leads along a first direction and can be arranged at a substantially central portion of the side face of the paddle. Furthermore, each of the first outer leads can have a first area. The second outer lead can be arranged at an edge portion of the side face of the paddle and can be supported by the paddle. The second outer lead can have a second area that is larger than the first area.

Abstract: A light emitting device has a cup portion with a bottom surface opening, and one electrode of a light emitting element is connected to the cup portion. The other electrode of the light emitting element is connected to a lead set up from an inner space to outside the cup portion using the opening of the cup portion. Each electrode and lead of the light emitting device can be electrically connected without bonding wires. This prevents shadows or light unevenness from reflecting the shape of the bonding wire, thereby enhancing light-emission efficiency. As an alternative to setting up the lead from inside to the outside of the cup portion, the lead existing outside the cup portion and the other electrode are electrically connected via the bonding wire through the cup portion's opening. Thus, light outputted outside of the light emitting device is not intercepted by the bonding wire.

Abstract: Provided are a stack semiconductor package manufactured by multiple molding that can prevent the breakage due to stress concentration at a connecting portion between separate semiconductor packages and a method of manufacturing the same. The stacked semiconductor packages are combined together through sealing resins by molding them multiple times, resulting in uniform stress distribution across substantially the entire interface between the semiconductor packages.

Abstract: A supporting frame is used to solidly bridge to the two metallic contacts of a surface mount diode chip. Any bending or twisting stress between the two contacts is borne by the supporting frame instead of the diode chip. Otherwise the stress may damage the diode chip. wherein said supporting forms a cantilever over said first metallic contact and the overhanging end of the cantilever is glued to said second metallic contact.

Abstract: A semiconductor package mainly includes a semiconductor chip and a plurality of leads at the periphery of the semiconductor chip. Each of the leads has a first portion, a second portion and opposing upper and lower surfaces, wherein the second portion of the leads are bent upwards. The semiconductor package has a plurality of bonding wires with one ends connected to the bonding pads of the semiconductor chip and the other ends connected to the first portions of the leads. The semiconductor package is provided with a package body formed over the semiconductor chip and the leads, wherein each of the leads is substantially embedded in the package body with the lower surface thereof exposed from the package body. The present invention further provides a method for manufacturing the semiconductor package.

Abstract: A support structure for a semiconductor device with peripherally disposed contacts includes a support substrate and at least one conductive column protruding from the support substrate. The at least one conductive column is configured to contact an outer connector on a peripheral edge of a semiconductor device that may be carried by the support structure. Optionally, the at least one conductive column may engage a feature of (e.g., a recess in) the peripherally disposed outer connector. The at least one conductive column may facilitate alignment of one or more semiconductor devices with the support substrate alignment of semiconductor devices relative to one another, or electrical connection between multiple semiconductor devices of other components.

Abstract: A semiconductor package mainly includes a semiconductor chip and a plurality of L-shaped leads arranged at the periphery of the semiconductor chip. Each of the L-shaped leads has an inner lead portion exposed out of the lower surface of the semiconductor package and an outer lead portion formed substantially parallel to and adjacent to one of the side surfaces of the semiconductor package. The semiconductor chip has a plurality of bonding pads electrically coupled to the inner lead portions of the L-shaped leads. The semiconductor package is provided with a package body formed over the semiconductor chip and the inner lead portions of the L-shaped leads.

Abstract: A leadframe comprising a downset formed adjacent to an edge of the leadframe so as to direct the molding compound to flow evenly inside the mold cavity. The downset has an upward slope extending from the edge of the frame and levels off with the rest of the frame at a first transition point. The upward slope facilitates the upward flow of the molding compound entering from a bottom gate. Likewise, the leadframe also directs flow in a top gated mold by reversing the orientation of the leadframe or by forming a reverse downset on the leadframe.

Abstract: In a semiconductor apparatus in which a main current of a semiconductor device flows through a wiring pattern formed on an insulation circuit board, the rise in temperature of the wiring pattern is suppressed and the increase in cost of parts can be minimized. On the insulation circuit board, a copper pattern is formed. A heat spreader is soldered to the copper pattern, and the heat spreader is loaded with a semiconductor chip. An external electrode and the heat spreader are arranged to shorten the distance between the side of the external electrode and the side of the heat spreader.

Abstract: A leadframe comprising a downset formed adjacent to an edge of the leadframe so as to direct the molding compound to flow evenly inside the mold cavity. The downset has an upward slope extending from the edge of the frame and levels off with the rest of the frame at a first transition point. The upward slope facilitates the upward flow of the molding compound entering from a bottom gate. Likewise, the leadframe also directs flow in a top gated mold by reversing the orientation of the leadframe or by forming a reverse downset on the leadframe.

Abstract: A semiconductor apparatus includes a semiconductor pellet having electrodes thereon; a plurality of lead terminals, which electrically connect the electrodes of the semiconductor pellet to terminals formed on a substrate; and a molding member, which is filled around the semiconductor pellet and upper parts of the lead terminals. The plurality of lead terminals are shaped to be elongated strips and are arranged to extend out of the molding member toward the substrate.

Abstract: A Method of Making a High Precision Microelectromechanical Capacitor with Programmable Voltage Source includes steps for forming a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision, programmable voltage source. The trim capacitor has a variable capacitance value, preferably for making fine adjustments in capacitance. The capacitance actuator is preferably mechanically coupled to and electrically isolated from the trim capacitor and is used to control the capacitance value of the trim capacitor. The capacitance adjustment of the trim capacitor is non-destructive and may be repeated indefinitely. The trim capacitor may be adjusted by mechanically changing the distance between its electrodes. The programmable voltage source provides a highly accurate and stable output voltage potential corresponding to control signals for controlling the capacitance actuator.

Abstract: A supporting frame is used to solidly bridge to the two metallic contacts of a surface mount diode chip. Any bending or twisting stress between the two contacts is borne by the supporting frame instead of the diode chip. Otherwise the stress may damage the diode chip. wherein said supporting forms a cantilever over said first metallic contact and the overhanging end of the cantilever is glued to said second metallic contact.

Abstract: The present invention relates to a three-dimensional multichip stack electronic package structure and method for making the same, including a main substrate having at least a pin-hole set and at least a flexible substrate having at least a pin terminal. At least an electronic device including an active component and a passive component is attached to the flexible substrate by adhesion. In the flexible substrate, electric signals of the electronic device are delivered to the pin terminal through at least a conductive wire for transmitting electric signals. In assembly, the pin terminal of the flexible substrate is inserted into the pin hole of the main substrate. Then, the flexible substrate is folded so as to package the electronic device in a three-dimensional multichip stack manner.

Abstract: An integrated circuit package includes a first non-conductive substrate having a first inner surface and a second non-conductive substrate having a second inner surface. A die having a first thickness is disposed between the first and second inner surfaces. A leadframe includes a member having a proximal end and a distal end. The proximal end has a second thickness less than the first thickness. The distal end is disposed between the first and second inner surfaces. The distal end is undulated such that the distal end has an effective thickness greater than the second thickness.

Abstract: A supporting frame is used to solidly bridge to the two metallic contacts of a surface mount diode chip. Any bending or twisting stress between the two contacts is borne by the supporting frame instead of the diode chip. Otherwise the stress may damage the diode chip. wherein said supporting forms a cantilever over said first metallic contact and the overhanging end of the cantilever is glued to said second metallic contact.

Abstract: An integrated circuit (IC) package that comprises a lead frame. The lead frame has a downset portion and leads. The downset portion has an exterior surface that is configured to face away from a mounting board, and an interior surface that is configured to face towards the mounting board. The leads are bent away from the exterior surface, and each of the leads have a first end coupled to an IC and a second end configured to pass through one of a plurality of mounting holes extending through the mounting board. The IC is coupled to the interior surface.

Abstract: The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group. Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.

Abstract: A semiconductor device comprises a semiconductor chip which is mounted on a stage. A plurality of leads are electrically connected with the semiconductor chip. A package encloses the semiconductor chip and a part of the plurality of leads. A first corner lead is provided in the stage and outwardly extends from at least one of vertex portions at four corners of the stage to an exterior of the package.

Abstract: An apparatus and method for attaching a semiconductor die to a lead frame wherein the electric contact points of the semiconductor die are relocated to the periphery of the semiconductor die through a plurality of conductive traces. A plurality of leads extends from the lead frame over the conductive traces proximate the semiconductor die periphery and directly attaches to and makes electrical contact with the conductive traces in a LOC arrangement. Alternately, a connector may contact a portion of the conductive trace to make contact therewith.

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

Abstract: A support structure for a semiconductor device with peripherally disposed contacts includes a support substrate and at least one conductive column protruding from the support substrate. The at least one conductive column is configured to contact an outer connector on a peripheral edge of a semiconductor device that may be carried by the support structure. Optionally, the at least one conductive column may engage a feature of (e.g., a recess in) the peripherally disposed outer connector. The at least one conductive column may facilitate alignment of one or more semiconductor devices with the support substrate alignment of semiconductor devices relative to one another, or electrical connection between multiple semiconductor devices of other components.

Abstract: Provided are a stack semiconductor package manufactured by multiple molding that can prevent the breakage due to stress concentration at a connecting portion between separate semiconductor packages and a method of manufacturing the same. The stacked semiconductor packages are combined together through sealing resins by molding them multiple times, resulting in uniform stress distribution across substantially the entire interface between the semiconductor packages.

Abstract: A semiconductor power module includes a lead frame having a first portion at a first level, a second portion surrounding the first portion at a second level, and a plurality of terminals connected to the second portion. The semiconductor power module further includes a power circuit mounted on a first surface of the first portion and an insulator having an electrically insulating property and thermal conductivity. The insulator has a first surface adjacent to a second surface of the first portion, and a second surface opposite to the first surface of the insulator and exposed to the outside. The semiconductor power module further includes a sealer having an electrically insulating property that covers the power circuit.