Trench Capacitor (epo) Patents (Class 257/E29.346)
  • Deep-trench capacitor with hemispherical grain silicon surface and method for making the same
    Patent number: 7009238
    Abstract: A method for manufacturing a trench capacitor that includes providing a semiconductor substrate, forming a deep trench in the substrate, forming a thin sacrificial layer on a surface of the trench, and forming a hemispherical silicon grain layer over the thin sacrificial layer, wherein the sacrificial layer has a thickness to act as an etch stop during a subsequent step to remove at least a portion of the hemispherical silicon grain layer, and is electrically conductive.
    Type: Grant
    Filed: October 19, 2004
    Date of Patent: March 7, 2006
    Assignee: ProMOS Technologies Inc.
    Inventors: Yueh-Chuan Lee, Shih-Lung Chen