Abstract: Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer (1) and a pair of metal electrodes (2) which are arranged on the surface of the semiconductor layer (1) at an interval (d) and form an MSM junction. The interval (d) satisfies the relationship of ?>d>?/100, where ? is the wavelength of incident light. The metal electrodes (2) can induce surface plasmon. At least one of the electrodes forms a Schottky junction with the semiconductor layer (1), and a low end portion is embedded in the semiconductor layer (1) to a position at a depth less than ?/2n, where n is the refractive index of the semiconductor layer (1).

Abstract: Disclosed is a multi-channel array radiation detector that can provide high-definition and high-resolution CT photo-images. The radiation detector has semiconductor photo-detecting elements arranged lengthwise and breadth-wise in a lattice manner and scintillator elements arranged on them one-to-one. The scintillator elements have thin metal light-reflecting material layers formed on side surfaces of the scintillator elements, and a radiation shielding material layer composed of resin blended with heavy metal element particles is filled in between adjacent metal light-reflecting material layers.

Abstract: A photoelectric conversion device comprises a semiconductor substrate and a multilayer wiring structure, wherein the multilayer wiring structure includes a first wiring layer which serves as a top wiring layer in an effective region and contains aluminum as a principal component, a first insulation film arranged in the effective region and an light-shielded region so as to cover the first wiring layer, and a second wiring layer which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and contains aluminum as a principal component, and wherein the first insulation film has, in the effective region, a first portion which is positioned above the photoelectric conversion unit, and the first portion functions as at least a part of an interlayer lens.

Abstract: A semiconductor sensor including a plurality of pixels, each of which includes a fluorescent molecule layer and a photosensitive layer. The fluorescent molecule layer converts light incident on the pixel to surface plasmons. The photosensitive layer generates a light detection signal representative of an intensity of light incident on the pixel in response to the surface plasmons in a region of the sensor which is close enough to the surface of the pixels that electronic crosstalk between the pixels does not occur.

Abstract: Protection for infrared sensing device, and more particularly, to a monolithically integrated uncooled infrared sensing device using IC foundry compatible processes. The proposed infrared sensing device is fabricated on a completed IC substrate. In an embodiment, the infrared sensing device has a single crystal silicon plate with an absorbing layer supported a pair of springs. The absorbing layer absorbs infrared radiation and heats up the underlying silicon layer. As a result, an n well in the silicon layer changes its resistance related to its temperature coefficient of resistance (TCR). In another embodiment, the infrared sensing device has a top sensing plate supported by an underlying spring structures. The top sensing plate has sensing materials such as amorphous silicon, poly silicon, SiC, SiGe, Vanadium oxide, or YbaCuO. Finally, a micro lens array is placed on top of the sensing pixel array with a gap in between.

Abstract: A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.

Abstract: Photodetection devices and methods are described. The photodetection devices comprise semiconductor tapered pillars.

Abstract: A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.

Abstract: A thermopile sensor for detection of infrared radiation in a measurement wavelength range having a sensor substrate in which a cavity is formed, a diaphragm formed on the sensor substrate above the cavity, at least one thermopile structure formed in, on, or below the diaphragm, having at least one thermopile pair of mutually contacted thermopile legs, where the two thermopile legs are made of doped semiconductor materials having different Seebeck coefficients, and at least one insulating intermediate layer formed between the thermopile legs. A layer system having at least the two thermopile legs and at least the insulating intermediate layer is formed above the lower cavity and has multibeam interference for IR radiation in the measurement wavelength range, absorbing a portion of the IR radiation and at least partially reducing the reflection.

Abstract: A method of preparing a porous semiconductor film on a substrate comprising the steps: a) preparing, on a first substrate, an adhesion layer capable of providing electrical and mechanical contact between a porous semiconductor layer attached to said adhesion layer and said first substrate, b) applying on a second substrate that is capable of withstanding temperatures >=300° C.

Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Abstract: The present disclosure is directed to systems and methods for protecting a semiconductor product or material from harmful effects of pulsed laser irradiation. In some embodiments, a thin sacrificial protective mask layer that expires after one laser processing operation is applied to the surface of the product or material to be laser-treated. The thin protective mask layer reflects, absorbs, or otherwise protects the underlying product or material from the energy of the laser.

Abstract: The ultraviolet sensor has a ZnO layer composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer which is provided in contact with the ZnO layer and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode electrically connected to the ZnO layer, and a second terminal electrode electrically connected to the (Ni,Zn)O layer. The ZnO layer is disposed at an ultraviolet ray receiving side. The (Ni,Zn)O layer is preferably formed of a sintered body.

Abstract: There is provided a photoconductive element capable of generating and detecting broadband electromagnetic waves such as terahertz waves at a comparatively high efficiency by decreasing or avoiding the absorption of electromagnetic waves into a substrate. A photoconductive element 1 includes a photoconductive film 5 exhibiting conductivity by the radiation of light, a substrate 6 holding the photoconductive film and a thin film sandwiched between the photoconductive film 5 and the substrate 6, the thin film being different in composition from the photoconductive film 5 and the substrate 6. The photoconductive film 5 is provided with an antenna 7 having a gap portion 2 and an electrode 4 electrically connectable to the antenna 7. At least a part of the photoconductive film where the gap portion 2 of the antenna 7 is located is single crystal. The substrate 6 has an opening portion 3 at a part corresponding to a part of the photoconductive film 5 where the gap portion 2 of the antenna 7 is located.

Abstract: An image sensor is provided having: a color filter layer including a red color filter with a first thickness, a green color filter with a second thickness, and a blue color filter with a third thickness; and a microlens array having a first microlens with a fourth thickness formed on the red color filter, a second microlens with a fifth thickness formed on the green color filter, and a third microlens with a sixth thickness formed on the blue color filter. In one embodiment, the sums of the first thickness and the fourth thickness, the second thickness and the fifth thickness, and the third thickness and the sixth thickness can be the same.

Abstract: A plurality of line image sensor ICs 110 are formed to be arranged in X, Y directions with gaps therebetween on a semiconductor substrate 101. The gaps between the line image sensor ICs 110 become scribe lines 102X, 102Y. A pattern of dummy interconnects 120 is formed in a region where a short side 110S of an arbitrary line image sensor IC 110 is opposed to a short side 110S of another line image sensor IC 110 adjacent to the arbitrary line image sensor IC 110 in the X direction in a region where the scribe line 102Y is formed. When a material gas is generated by plasma CVD, the material gas is uniformly deposited not only on the line image sensor ICs 110, but also on the dummy interconnects 120. Consequently, a protective film with a uniform thickness can be formed on the line image sensor ICs 110.

Abstract: An infrared detector and an infrared solid state imaging device of low noise in which a mechanical distortion of an infrared sensor portion can be decreased are provided. The infrared detector which comprises a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.

Abstract: The present invention relates to a photovoltaic conversion apparatus including a by-pass diode and a manufacturing method thereof. The photovoltaic conversion apparatus of the present invention comprises at least one unit solar cell module configured of at least one unit solar cell; and a by-pass solar cell module including at least one solar cell electrically connected to the unit solar cell to by-pass current. According to the present invention, a photovoltaic conversion apparatus having high photoelectric conversion efficiency can be manufactured. Also, the photovoltaic conversion apparatus will contribute to earths environmental conservation as the next clean energy source and can be directly applied to private facilities, public facilities, military facilities, etc., to create enormous economic value.

Abstract: An improved semiconductor apparatus that comprises an elongated structure that extends into the substrate. The apparatus comprises a collection contact, a resistive path, a bias connection that creates along the length of the elongated structure, an electric field component that drives signal charge carriers in a direction perpendicular to the elongated structure, and a second bias that generates a current flow that creates within the substrate a constant electric field component to drive signal charge carriers towards the collection contact on the first surface.

Abstract: In a solid-state imaging device, the pixel circuit formed on the first surface side of the semiconductor substrate is shared by a plurality of light reception regions. The second surface side of the semiconductor substrate is made the light incident side of the light reception regions. The second surface side regions of the light reception regions formed in the second surface side part of the semiconductor substrate are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part of the semiconductor substrate are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Abstract: The present invention provides a photosensor formed in a semiconductor substrate having a silicon substrate, an insulating layer formed over the silicon substrate, and a silicon semiconductor layer formed over the insulating layer, comprising an ultraviolet photosensitive element formed in the silicon semiconductor layer, and at least one visible light photosensitive element formed in the silicon substrate.

Abstract: Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: An image sensor, in particular a CMOS image sensor, for electronic cameras having a plurality of light-sensitive pixels which are arranged in rows and columns and whose signals are conducted via a plurality of column lines to column amplifiers, with a column amplifier being associated with each column line. At least one further column amplifier which is simultaneously also associated with at least one other column line is associated with the respective column line. A switching device switches the respective column line selectively to one of the associated column amplifiers.

Abstract: A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr1 for transferring the photoelectric charges, and a storage capacitor element C connected to the photodiode PD at least through the transfer transistor Tr1 for accumulating, at least through the transfer transistor Tr1, the photoelectric charge overflowing from the photodiode PD during accumulating operation.

Abstract: In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

Abstract: Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer (1) and a pair of metal electrodes (2) which are arranged on the surface of the semiconductor layer (1) at an interval (d) and form an MSM junction. The interval (d) satisfies the relationship of ?>d>?100, where ? is the wavelength of incident light. The metal electrodes (2) can induce surface plasmon. At least one of the electrodes forms a Schottky junction with the semiconductor layer (1), and a low end portion is embedded in the semiconductor layer (1) to a position at a depth less than ?/2n, where n is the refractive index of the semiconductor layer (1).

Abstract: The present invention provides a photodiode array which can secure a sufficient aperture ratio with respect to light to be detected while restraining crosstalk between photodetecting channels even during operation in Geiger mode. In a photodiode array 1, resistors 42 and wirings 43 to be electrically connected to avalanche multipliers 6, respectively, are collectively formed on the upper surface side of a semiconductor substrate 2. Therefore, by setting the lower surface side of the semiconductor substrate 2 as a light-incident side, a sufficient aperture ratio can be secured while restraining crosstalk between photodetecting channels 10 by separators 5. Furthermore, on the lower surface side of the semiconductor substrate 2, accumulation layers 7 are formed, so that high quantum efficiency in each photodetecting channel 10 is secured and the effective aperture ratio is improved.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: A backside illuminated CMOS image sensor having an silicon layer with a front side and a backside, the silicon layer liberates charge when illuminated from the backside with light, an active pixel circuitry located on the front side of the semiconductor layer, a pinned photodiode adjacent to the active pixel circuitry on the front side of the semiconductor layer and configured to collect charge liberated in the semiconductor layer, and an implant located in the semiconductor layer, underneath the active pixel circuitry, for allowing charge liberated in the semiconductor layer to drift from the backside of the semiconductor layer to the pinned photodiode on the front side of the semiconductor layer.

Abstract: A method of forming a thin multifunction solar cell in which an electroplating process is used to form a thick metal layer to give strength and support to the solar cell. The strain of the plated thick metal layer is adjusted during the process by parameter control to compensate for the strain in the other device layers, so that the curvature of the thin device can be eliminated or otherwise controlled.

Abstract: The invention provides an integrated circuit package and method for operating and fabricating thereof. The package comprises a transparent substrate having a first surface and a second surface opposite to each other and a semiconductor layer formed on the second surface of the transparent substrate. A photosensitive device is fabricated on the semiconductor layer and a metal plug is formed over the second surface of the transparent substrate and they are electrically connected to each other. A solder ball is formed over the second surface of the transparent substrate and electrically connected to the metal plug. In the package, the photosensitive device senses light penetrating the transparent substrate and the semiconductor layer through its backside to produce a signal which is subsequently transmitted to solder ball by the metal plug. Thus, the signal conductive path is shortened.

Abstract: One embodiment relates to a structure for a solar cell. The structure includes a silicon substrate with P-type and N-type active diffusion regions therein. An oxynitride passivation layer is included at least over the P-type and N-type active diffusion regions. The structure further includes contact openings through the oxynitride passivation layer to the P-type and N-type active diffusion regions, and metal grid lines which selectively contact the P-type and N-type active diffusion regions by way of the contact openings. Another embodiment relates to a method of fabricating a solar cell. Other embodiments, aspects and features are also disclosed.

Abstract: A backside illuminated CMOS image sensor having an silicon layer with a front side and a backside, the silicon layer liberates charge when illuminated from the backside with light, an active pixel circuitry located on the front side of the semiconductor layer, a pinned photodiode adjacent to the active pixel circuitry on the front side of the semiconductor layer and configured to collect charge liberated in the semiconductor layer, and an implant located in the semiconductor layer, underneath the active pixel circuitry, for allowing charge liberated in the semiconductor layer to drift from the backside of the semiconductor layer to the pinned photodiode on the front side of the semiconductor layer.

Abstract: The present invention provides an optical semiconductor device including a semiconductor thin film (4) having photoconductivity and a pair of electrodes (5) and (10) for applying an electric field to an inside of the semiconductor thin film (4) in a direction approximately vertical to a surface of the semiconductor thin film (4), wherein the semiconductor thin film (4) generates an electromagnetic wave when light is applied to a region thereof to which the electric field is applied. The electrodes are provided to a front surface and a back surface of the semiconductor thin film (4) with the semiconductor thin film interposed therebetween.

Abstract: As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step is then performed through the openings in the mask, and after a processing step is completed the mask is adjusted by a re-flow process in which the structure is placed into an atmosphere of solvent vapor of a solvent of the mask material. By way of the reflow process, the mask material softens and re-flows to reduce the size of the openings in the mask causing edges of the surface areas on which the processing step was performed to be covered by the mask for subsequent processing steps.

Abstract: A CMOS image sensor adapted to remove a dead zone and preventing occurrence of dark current. The CMOS image sensor can an epi layer defined by at least a photodiode region and a device isolation region formed over a semiconductor substrate; a device isolation film formed in the device isolation region; a gate electrode formed over the epi layer; and a contact plug overlapping a portion of the photodiode region and a portion of the gate electrode.

Abstract: A method and apparatus to operate a pixel circuit within an active pixel image sensor in a common gate amplifier mode.

Abstract: A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like.

Abstract: The present invention provides a display device having an illuminance detection circuit. The illuminance detection circuit includes: a photosensor which changes an optical current in response to illuminance of an external light; a capacitor which discharges a charge when the optical current flows in the photosensor; a comparator which compares a voltage at one end of the capacitor and a comparison reference voltage; a switching circuit which is connected to one end of the capacitor and charges the capacitor in response to a level of an output signal of the comparator; and a selection circuit which applies either a first voltage or a second voltage to the other end of the capacitor in response to the level of the output signal of the comparator.

Abstract: A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is needed and compensates for the relative stiffness of the cantilevered beam in closing the switch. In opening the switch, the stiffness of the cantilevered beam may advantageously enable quicker operation which may be desirable in higher frequency situations.

Abstract: The invention concerns a matrix structure of multispectral detectors (200) comprising: a superimposition of several layers of semiconductor material separated by layers of dielectric material transparent to a light to be detected, said superimposition offering a face for receiving the light to be detected, said superimposition of layers of semiconductor material being spread out in picture elements or pixels, each part of the layer of semiconductor material corresponding to a pixel comprising a light detection element delivering electrical charges in response to the light received by said detection element, means for collecting the electrical charges delivered by each light detection element, said collection means being electrically connected to electrical connection means (153) and comprising conductive walls (151).

Abstract: With the reduced size of a solid state imaging device, the invention provides: a solid state imaging device of a chip size and having good environmental durability; a semiconductor wafer used for fabricating a solid state imaging device; an optical device module incorporating a solid state imaging device; a method of solid state imaging device fabrication; and a method of optical device module fabrication. The solid state imaging device comprises: a solid state image pickup device formed on a semiconductor substrate; a light-transparent cover arranged opposite to an effective pixel region, so as to protect (the surface of) the effective pixel region formed in one surface of the solid state image pickup device against external environment; and an adhering section formed outside the effective pixel region in the one surface of the solid state image pickup device, so as to adhere the light-transparent cover and the solid state image pickup device.

Abstract: An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged.

Abstract: Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1?x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters may be used.

Abstract: A radiation sensor (10) comprises a support (1), a cavity (2) which may be a recess or a through hole formed in one surface of the support (1), a sensor element (4, 4a, 4b) formed above the cavity (2), preferably on a membrane (3) covering the cavity (2), and electric terminals (5, 5a, 5b) for the sensor element (4, 4a, 4b). The cavity (2) in the surface of the support (1) has a fully or partly rounded contour (2a).

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.