Abstract: Techniques for providing a pixel cell which exhibits improved doping in a semiconductor substrate. In an embodiment, a first doping is performed through a backside of the semiconductor substrate. After the first doping, the semiconductor substrate is thinned to expose a front side which is opposite of the backside. In another embodiment, a second doping is performed through the exposed front side of the thinned semiconductor substrate to form at least part of a pixel cell structure.

Abstract: Provided is a detecting element that detects a parameter for a predetermined gas or liquid in a surrounding atmosphere by being excited by excitation light and generating light corresponding to the surrounding atmosphere, the detecting element including: a substrate; and nanoscale crystal structures formed on the substrate and constituted by a compound semiconductor light emitting element having a heterostructure well layer, wherein when the nanoscale crystal structures adsorb atoms or molecules of the predetermined gas or liquid, there is distortion of a band of a structure with a smaller bandgap width in the well layer, this distortion brings about a change in transition energy, and this change brings about a change in at least one of an intensity and a wavelength of light generated by the well layer, thereby indicating the parameter for the gas or the liquid.

Abstract: A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and

Abstract: Disclosed is a solid-state image pickup apparatus including a semiconductor substrate, a photoelectric converter, a transfer gate, an insulating layer, a first silicon layer, and a pixel transistor portion. The photoelectric converter converts light energy of incident light into electrical energy and obtains a signal charge. The photoelectric converter is formed on a surface side in the semiconductor substrate. The transfer gate reads the signal charge from the photoelectric converter, and the transfer gate is formed on the semiconductor substrate adjacent to the photoelectric converter. The insulating layer is formed on the photoelectric converter in the semiconductor substrate. The first silicon layer is formed on the insulating layer. The pixel transistor portion amplifies and outputs the signal charge read by the transfer gate. The pixel transistor portion is formed on the insulating layer with the first silicon layer being an active region.

Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.

Abstract: A display device of the present invention includes a display panel (101) including a photodiode (17), which generates a current having a magnitude corresponding to an intensity of light incident on the photoelectric conversion element; and, a backlight (108) for irradiating light from behind the photodiode (17) to beyond a front surface of the display panel (101), wherein: the photodiode (17) includes an activating layer made of hydrogenated a-Si; the light source (108) has a peak wavelength within a range from 780 nm or more to 830 nm or less; and the display device further includes a light blocking member (15) for blocking light having a wavelength less than 780 nm, the light blocking member (15) being provided between a front surface of the display panel (101) and the photodiode (17) and over the photodiode (17).

Abstract: Provided is a fused polycyclic compound represented by general formula 1: (In general formula 1, at least one of R1 to R4 is a group selected from a substituted or unsubstituted aryl group and a substituted or unsubstituted heterocyclic group, and R1 to R4 may be the same as or different from each other.

Abstract: In one example, an optoelectronic transducer includes a first contact, a second contact, a passivation layer, and a protection layer. The passivation layer is formed on top of the first contact and the second contact and is configured to substantially minimize dark current in the optoelectronic transducer. The protection layer is formed on top of the passivation layer and substantially covers the passivation layer. The protection layer is configured to protect the passivation layer from external factors and prevent degradation of the passivation layer.

Abstract: A light generating system comprising: a plurality of solid state emitters (SSEs) and a stability control system for controlling the spectral stability of the SSEs. In a particular case, the stability control system may comprise: a power regulator to regulate power supplied to a sub-set of the plurality of SSEs; a constant current circuit connected to the power regulator to provide a constant current to the sub-set of SSEs; a current regulation set point connected to the constant current circuit; and a controller configured to set the regulation set point based on metrology relating to the state of the SSEs.

Abstract: A graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT)-based electro-optical (EO) modulator includes a graded base HBT and a light beam directed under the graded base HBT and passing through the free carrier plasma within for the purpose of inducing a phase modulation of the light beam.

Abstract: Provided is a detecting element that detects a parameter for a predetermined gas or liquid in a surrounding atmosphere by being excited by excitation light and generating light corresponding to the surrounding atmosphere, the detecting element including: a substrate; and nanoscale crystal structures formed on the substrate and constituted by a compound semiconductor light emitting element having a heterostructure well layer, wherein when the nanoscale crystal structures adsorb atoms or molecules of the predetermined gas or liquid, there is distortion of a band of a structure with a smaller bandgap width in the well layer, this distortion brings about a change in transition energy, and this change brings about a change in at least one of an intensity and a wavelength of light generated by the well layer, thereby indicating the parameter for the gas or the liquid.

Abstract: A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.

Abstract: An optical semiconductor device includes: a first conductivity type first semiconductor region; a first conductivity type second semiconductor region formed on the first semiconductor region; a second conductivity type third semiconductor region formed on the second semiconductor region; a photodetector section formed of the second semiconductor region and the third semiconductor region; a micro mirror formed of a trench formed selectively in a region of the first semiconductor region and the second semiconductor region except the photodetector section; and a semiconductor laser element held on the bottom face of the trench. A first conductivity type buried layer of which impurity concentration is higher than those of the first semiconductor region and the second semiconductor region is selectively formed between the first semiconductor region and the second semiconductor region in the photodetector section.

Abstract: A photoelectric conversion device includes a semiconductor substrate, a first insulating film on the semiconductor substrate, a second insulating film on the first insulating film, a third insulating film on the second insulating film, and a wiring disposed in the third insulating film, the wiring being a wiring layer closest to the semiconductor substrate. A first plug of a shared contact structure and a second plug are disposed in the first insulating film. A third plug and a first wiring that constitute a dual damascene structure are disposed in the second and third insulating films. The first insulating film is used as an etching stopper film during etching of the second insulating film and the second insulating film is used as an etching stopper film during etching of the third insulating film.

Abstract: A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.

Abstract: An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substrate. The photosensor and the light emitting element are isolated by the shallow trench isolation structure. An opening is formed in the shallow trench isolation structure to expose part of the substrate. An opaque shield is formed in the opening to prevent photons from the light emitting element from striking the photosensor.