Abstract: A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.

Abstract: Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

Abstract: A light sensor includes an element forming region having a light detection region. The element forming region excluding the light detection region is covered with a conductive film having a light shielding property, and the light detection region is covered with a conductive film having a light transmissive property. A method for preventing electromagnetic noise from entering a light sensor includes applying an electromagnetic shield conductive film to the light sensor and removing the electromagnetic shield conductive film at a region of the light sensor facing a light detection region.

Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.

Abstract: A grating structure for channeling and concentrating incident radiation includes a regular pattern of elements each with a metallic shell partially surrounding at least one subcavity. The subcavity is filled with a dielectric or semiconductor. Light of one or more predetermined wavelength ranges can be concentrated in the subcavity(s) and then efficiently channeled through the grooves between adjacent elements. An optoelectronic device includes the structure superposed on a substrate, which can be semiconductive, and the elements of the grating used as electrodes and adapted to allow a potential difference between adjacent (electrode) elements. The optoelectronic devices include photodetectors, e.g., metal-semiconductor-metal, pn, pin, avalanche, LEDs, IR emitting devices, and biological or chemical sensors.

Abstract: A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.

Abstract: A solid-state image pickup device relating to the present invention has a specific gap in a part of a lattice-shaped light blocking film pattern or wiring pattern having an opening enclosing a light reception region. Peripheral circuits and wiring layers on a pixel may be used as the light blocking film. In such a case, when multiple wiring layers are used as the light blocking film, layouts of a second and subsequent wiring layers is determined according to the layout of the first wiring layer above the light reception region. The specific gap is created in a part of the wiring enclosing the light reception region.

Abstract: An image sensor include an interlayer dielectric layer formed over a semiconductor substrate; a color filter array formed over the interlayer dielectric layer; a planarization layer formed over the color filter; and a microlens array having a continuous, gapless shape formed over the planarization layer and spatially corresponding to the color filter array. The microlens array is composed of a first dielectric layer and a second dielectric layer formed over the first dielectric layer.

Abstract: An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

Abstract: A method for manufacturing an image sensor that can include forming a pad electrode over a semiconductor substrate; forming a protective layer over the pad electrode; forming a via hole through the protective layer to expose a portion of the uppermost surface of the pad electrode; and then forming a gold layer over the exposed portion of the uppermost surface of the pad electrode.

Abstract: A photoelectric conversion device comprises a semiconductor substrate; a multilayer wiring structure; a first color filter layer including a plurality of first color filters which are arranged above a first photoelectric conversion units to allow light of a first color to enter the first photoelectric conversion units, each first color filter being connected to an adjacent first color filter; and a second color filter layer including a plurality of second color filters which are arranged above a second photoelectric conversion units to allow light of a second color to enter the second photoelectric conversion units, wherein the multilayer wiring structure including an uppermost wiring layer which defines the aperture regions corresponding to the respective photoelectric conversion units, and an insulation film arranged to cover the uppermost wiring layer, and wherein the first color filter layer and the second color filter layer are arranged to cover the insulation film.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed. The method includes forming a plurality of color filters on a substrate, each color filter having a curvature, and forming microlenses on the color filters that each has a radius of curvature that varies with the wavelength of the color filter on which it is formed.

Abstract: An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon.

Abstract: A waveguide photodetector detecting light incident on a light detecting end face includes: a substrate; and a layer stack structure on the substrate and including a semiconductor layer of a first conductivity type, an undoped semiconductor layer, and a semiconductor layer of a second conductivity type. The undoped semiconductor layer includes two or more undoped light absorbing layers and undoped non-light-absorbing layers. One non-light-absorbing layer is disposed between adjacent undoped light absorbing layers. The non-light-absorbing layers have a bandgap wavelength shorter than the wavelength of the incident light that is detected.

Abstract: Embodiments relate to a method of manufacturing an image sensor. According to embodiments, the method may include preparing a semiconductor substrate formed with a plurality of photodiodes, forming an interlayer dielectric layer on the semiconductor substrate, forming a color filter layer on the interlayer dielectric layer, forming a planar layer on the color filter layer, and forming micro-lenses coated with fat-soluble polymer on the planar layer. Since the micro-lens is uniformly formed due to the fat-soluble polymer coated on the micro-lens, the photo-sensitivity and color reproduction of the image sensor are improved, resulting in the high-quality image sensor.

Abstract: Provided is a method of fabricating a complementary metal oxide silicon image sensor. The method includes: applying a passivation oxide and a passivation nitride after forming a pad; selectively removing the passivation nitride in a pad region and a pixel region by a photolithography process, and performing a first cleaning process; performing a hydrogen anneal process; opening the pad by removing the passivation oxide in the pad region and performing a second cleaning process; applying a pad protective layer; performing a color filter array process, a planarization process, and a microlens process after the applying of the pad protective layer; and removing the pad protective layer in the pad region.

Abstract: A solid-state imaging device includes a pixel region and a driving circuit region which are disposed on a semiconductor substrate, the pixel region being configured such that a photoelectric conversion unit and a signal scanning circuit unit are included and a matrix of unit pixels is disposed, and the driving circuit region being configured such that a driving circuit for driving the signal scanning circuit unit is disposed, a first pad which is provided on a peripheral region on the semiconductor substrate on a side of a light receiving surface, the light receiving surface being formed on a substrate surface which is opposite to a substrate surface where the signal scanning circuit unit is formed, and a second pad which is provided on a side where the signal scanning circuit unit is formed, and which is disposed only at a position overlapping the pixel region.

Abstract: This invention offers a semiconductor device to measure a luminance for the visible wavelength range of light components and its manufacturing method which reduce its manufacturing cost. A first light-receiving element and a second light-receiving element are formed in a semiconductor substrate. Then, there is formed an arithmetic circuit that calculates a difference between a value of an electric current corresponding to an amount of light detected by the first light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light) and a value of an electric current corresponding to an amount of light detected by the second light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light).

Abstract: Disclosed is light-receiving device (1) comprising semiconductor substrate (101), a light-receiving layer arranged on semiconductor substrate (101), and filter layer (103) arranged between semiconductor substrate (101) and the light-receiving layer to absorb light other than reception light. First mesa (11) serving as the light-receiving layer is surrounded by third mesa (13) for absorbing at least light other than reception light. Consequently, even when filter layer (103) is too thin to sufficiently absorb light other than reception light, third mesa (13) absorbs the light, thereby preventing the light from reaching first mesa (11).

Abstract: A semiconductor apparatus has a light-receiving element. The light-receiving element has a photodiode unit having a shield film for removing noise, at least two test pads, and a shield film pseudo pattern which is formed by the same membranous type as the shield film and connected to the two test pads. The photodiode unit and the shield film pseudo pattern are integrated in one semiconductor chip. A resistance value of the shield film pseudo pattern is measured using the test pads connected to the shield film pseudo pattern. CMR of a photocoupler can be evaluated according to the correlation relationship between the measurement result and the sheet resistance of the shield film.

Abstract: A method for fabricating a CMOS image sensor includes developing a semiconductor substrate provided with metal pads with tetramethylammonium hydroxide (TMAH), to etch the metal pads. In accordance with the method, it is possible to realize normal output of materials, which were previously scrapped due to problems including pad corrosion, appearance defects and bonding pad issues which may occur in the process of fabricating CMOS image sensors. As a result, advantageously, it is possible to reduce wafer scrap and improve product yield.

Abstract: A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.

Abstract: A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The method includes forming a plurality of photodiodes on a semiconductor substrate; forming an insulating interlayer on the semiconductor substrate including the photodiodes; forming a protective layer on the insulating interlayer; forming a plurality of color filters corresponding to the photodiodes; forming a top coating layer on the color filters; forming a microlens pattern on the top coating layer; and forming a plurality of microlenses by reflowing the microlens pattern.

Abstract: Provided is a CMOS (complementary metal oxide semiconductor) image sensor and a manufacturing method thereof. In the method, a photodiode, an interlayer insulating layer, a color filter layer, and a planarizing layer are sequentially formed on a substrate. A photoresist is applied on the planarizing layer. The photoresist is selectively patterned to form a plurality of photoresist patterns. A surface of each photoresist is hardened. The hardened photoresist patterns are reflowed to form microlenses.

Abstract: A method for fabricating an image sensor, which includes the following steps, is provided. A semiconductor substrate including a sensor array, a pad and a passivation layer is provided, and the passivation layer covers the sensor array and the pad. An opening, which comprises tapered sidewalls not perpendicular to a bared surface of the pad, is formed in the semiconductor substrate to expose the pad. An under layer is formed on the semiconductor substrate, and covers the pad and the passivation layer. A color filter array is formed on the under layer and over the corresponding sensor array. A planar layer is formed on the color filter array. A portion of the under layer is removed to expose the pad. A plurality of U-lenses is formed on the planar layer.

Abstract: A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

Abstract: A surface profile sensor includes an interlayer insulating film provided with a planarized upper surface formed above a semiconductor substrate, a detection electrode film formed on the interlayer insulating film, an upper insulating film formed on the detection electrode film and the interlayer insulating film and including the surface on which a silicon nitride film is exposed, and a protection insulating film deposited on the upper insulating film and made of a tetrahedral amorphous carbon (ta-C) film including a window formed on the detection electrode film.

Abstract: An image sensor is provided having: a color filter layer including a red color filter with a first thickness, a green color filter with a second thickness, and a blue color filter with a third thickness; and a microlens array having a first microlens with a fourth thickness formed on the red color filter, a second microlens with a fifth thickness formed on the green color filter, and a third microlens with a sixth thickness formed on the blue color filter. In one embodiment, the sums of the first thickness and the fourth thickness, the second thickness and the fifth thickness, and the third thickness and the sixth thickness can be the same.

Abstract: An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.

Abstract: Disclosed is a pigment dispersion composition for producing a color filter. The pigment dispersion composition comprises a pigment, a binder resin, a dispersant and a solvent. The pigment is a blue anthraquinone pigment and is pretreated with a water-soluble inorganic salt and a wetting agent. The pigment dispersion composition can be used to produce a color filter for a color imaging device with good color separation and high transmittance.

Abstract: An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.

Abstract: A method for manufacturing a CMOS image sensor increases the performance of the CMOS image sensor by reducing a peeling phenomenon near a wafer edge and a preventing a circle defect in a pixel region. The method reduces defects in the external appearance of the pad. In order to accomplish the object, there is provided a method for manufacturing a CMOS image sensor, the method including depositing an oxide layer and a nitride layer after forming a pad on a substrate. The pad is exposed and cleaned by etching the oxide layer and the nitride layer. A portion of the oxide layer and the nitride layer over the edge region of the substrate may be etched and removed. A first ashing process, a solvent cleaning process, and a second ashing process may be performed. A pad protection layer is deposited. A hydrogen anneal process is performed. A micro-lens process, a planarization process, and a color filter array process are performed. The pad protection layer over a pad area is removed.

Abstract: A solar cell, including: a semiconductor substrate of a first conductive type, the semiconductor substrate having a first surface and a second surface facing away from to each other; a first electrode electrically coupled to the first surface of the semiconductor substrate; an emitter portion of a second conductive type, the emitter portion being adjacent to the second surface of the semiconductor substrate; an anti-reflective layer on the emitter portion and including a transparent electrode; and a second electrode on the anti-reflective layer and electrically coupled to the emitter portion through the anti-reflective layer, wherein the anti-reflective layer has a refractive index that is not less than 1.5 in a spectrum ranging from about 400 nm to about 1000 nm, and wherein the anti-reflective layer has a sheet resistance that is not greater than that of the emitter portion.

Abstract: A CMOS image sensor and a method for manufacturing the same are provided, in which a nitride layer for passivation is used as a microlens to reduce topology. The CMOS image sensor includes an upper metal layer partially deposited on a dielectric layer; a first nitride layer deposited on the upper metal layer; an undoped silicon glass layer deposited on the first nitride layer and polished by chemical-mechanical polishing; color filter array elements deposited and exposed on the undoped silicon glass layer and polished by the chemical-mechanical polishing; and a second nitride layer deposited on the first nitride layer and the color filter array elements and transfer-etched after forming a sacrificial microlens on the second nitride layer.

Abstract: A CMOS image sensor that includes a semiconductor substrate with a plurality of photodiodes arranged at fixed intervals on the semiconductor substrate. A light-shielding layer partially overlaping the plurality of photodiodes and an insulating interlayer are formed on an entire surface of the semiconductor substrate including the plurality of photodiodes. A color filter layer having a plurality of color filters separated by a predetermined gap is formed on the insulating interlayer and a planarization layer is formed over the entire surface of the semiconductor substrate including the color filter layer. A plurality of microlenses are formed on the planarization layer in correspondence with the color filters of the color filter layer, wherein an additional structural layer, disposed between the color filter layer and the insulating interlayer, is provided to close a predetermined gap between the color filters of the color filter layer.

Abstract: A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Abstract: A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.

Abstract: A composite material for providing at least one of a negative effective permeability and a negative effective permittivity for incident radiation of at least one wavelength is described. The composite material comprises a plurality of three-dimensional resonant cells disposed across a first substrate. Each three-dimensional resonant cell comprises a base substantially parallel to the substrate and at least three sidewalls upwardly extending therefrom. Each upwardly extending sidewall comprises a sidewall substrate having at least one conductor patterned thereon. Each upwardly extending sidewall is fabricated by forming the sidewall substrate as a substantially horizontal layer above the first substrate, lithographically patterning the sidewall substrate with the at least one conductor while horizontally disposed above the first substrate, and tilting up the sidewall substrate to the upwardly extending position.

Abstract: A solid-state image sensor of the present invention is a solid-state image sensor in which pixel cells are arranged on a semiconductor substrate, wherein each of the pixel cells includes: a photoelectric conversion unit that performs photoelectric conversion of incident light; and a microlens formed above the photoelectric conversion unit, the microlens corresponding to the photoelectric conversion unit, wherein the microlens includes a transparent layer and a color filter layer.

Abstract: Provided are a finger type photodiode and a method of manufacturing the same, which can reduce noise by forming a shallow doping layer. The finger type photodiode includes a bottom substrate supporting layers to be formed thereon, an epitaxial layer formed on the bottom substrate, a finger doping layer formed in a finger shape on a top surface of the epitaxial layer, and a shallow doping layer formed with a shallow depth on an externally exposed top surface of the epitaxial layer and a top surface of the finger doping layer. Since the dangling bond generated on the epitaxial layer and the finger doping layer is reduced, noise can be reduced, thereby improving the light efficiency and reliability of the photodiode.

Abstract: A method of manufacturing a semiconductor photodetector having spectral sensitivity close to relative luminous characteristics at low cost includes steps of sealing a light receiving surface side of a semiconductor light receiving element having high spectral sensitivity in wavelengths from the visible light region to infrared region with a sealing resin, a semiconductor photodetector is made by preparing dispersion liquid by dispersing micro particles having infrared blocking characteristics not more than 100 nm in toluene, preparing a sealing resin by mixing the dispersion liquid in a transparent resin, sealing the semiconductor light receiving element with the resin, removing toluene in the sealing resin by defoaming and hardening sealing resin thereafter.

Abstract: A pixel area, which is composed of a plurality of unit pixels each including a photoelectric conversion unit and a signal scanning circuit, is formed on a semiconductor substrate. An optical black pixel region, in which a plurality of optical black pixels for setting a dark-time level are formed, is formed in the pixel area. A barrier layer, which has an impurity concentration that is higher than an impurity concentration of the semiconductor substrate and has a conductivity type that is identical to a conductivity type of the semiconductor substrate, is formed in the optical black pixel region of the semiconductor substrate.

Abstract: A CMOS image sensor and a fabricating method for a semiconductor device are disclosed. Embodiments provide a CMOS image sensor having an improved structure using a light reflection system, with a fabricating method thereof to simplify the fabrication process and maximize a light receiving area. Embodiments may be applied to a semiconductor device having a lamination structure.

Abstract: A color imaging device includes a semiconductor substrate including a plurality of photoelectric transducers, and a color filter including a plurality of coloring layers provided to associate with the photoelectric transducers of the semiconductor substrate. Each of the coloring layers of the color filter including a side surface that is erected with respect to a surface of the semiconductor substrate, and an inclined surface that is continuous from an end of the side surface located in the opposite side of the semiconductor substrate toward an end portion of the coloring layer located in the opposite side of the semiconductor substrate. The coloring layers are arranged with their side surfaces being in contact with each other without a gap therebetween, and the end portion of the coloring layer has a curved surface shape protruding toward the opposite side of the corresponding photoelectric transducer.

Abstract: An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar transparent layer is formed over the color filters and microlenses are formed on the planar transparent layer over the color filters.

Abstract: In a solid-state imaging device of the present invention, light-sensitive elements 54, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate 51. A plurality of detecting electrodes 53 are provided on the semiconductor substrate 51 corresponding to the light-sensitive elements 54 for detecting an electrical charge generated by each light-sensitive element 54. A plurality of interconnections 57 coat the detecting electrodes 53, and apply a voltage thereto. A plurality of reflecting walls 62 are formed in a grid pattern over the interconnection 57 so as to partition the light-sensitive elements 54 individually for reflecting a portion of light entering the semiconductor substrate 51 from above onto the light receiving section of each light-sensitive element 54. The plurality of reflecting walls 62 are electrically insulated from the interconnections 57.

Abstract: There is provided an electromagnetic wave shielding sheet which can effectively prevent an adhesive layer from being colored at the time of etching. The electromagnetic wave shielding sheet comprises a laminate of at least a transparent substrate film, an adhesive layer, and an electromagnetic wave shielding layer. The electromagnetic wave shielding layer is formed of a mesh metal foil with densely arranged openings and being transparent. The adhesive layer is substantially colorless and transparent.

Abstract: An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar transparent layer is formed over the color filters and microlenses are formed on the planar transparent layer over the color filters.

Abstract: A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiodes region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.

Abstract: Provided is a method of fabricating a CMOS image sensor. According to an embodiment method, an insulating layer can be formed on a semiconductor substrate, and a metal pad can be formed on the insulating layer. A first overcoat layer can be formed on the insulating layer including the metal pad. The first overcoat layer can be selectively removed to expose a portion of the metal pad. A protective layer can be formed on the exposed metal pad and the first overcoat layer. A color filter array can be formed on the protective layer, and a second overcoat layer can be formed on the color filter array and the protective layer. The second overcoat layer can be selectively removed to remain on a photodiode region. A plasma treatment can then be performed on the remaining second overcoat layer before forming a microlens.