Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer.

Abstract: An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device.

Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Abstract: An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein.

Abstract: A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers that are included in a multiquantum well structure, and an end barrier layer that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer. The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure.

Abstract: An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device.

Abstract: A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting device 1 is provided with an n-electrode 50, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack 40 is mounted on a substrate 10. A plurality of convexes are arranged on a first convex region 80 and a second convex region 90 on the light extraction surface. The second convex region 90 adjoins to the interface between the n-electrode 50 and the semiconductor stack 40, between the first convex region 80 and the n-electrode 50.

Abstract: A thermal stress releasing structure is applied to a light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer includes a plurality of first material layers and a plurality of second material layers. The first material layers and the second material layers are alternately stacked in a staggered manner to form a concave-convex structure in a stacking direction of the first and second material layers. The concave-convex structure is formed in a corrugated shape to function as the thermal stress releasing structure, thus is capable of releasing thermal stress generated by thermal expansion and contraction of the buffer layer in the LED to prevent the buffer layer from damaging a metal layer or an epitaxy layer.

Abstract: A nitride-based semiconductor light-emitting device having enhanced efficiency of carrier injection to a well layer is provided. The nitride-based semiconductor light-emitting device comprises a hexagonal gallium nitride-based semiconductor substrate 5, an n-type gallium nitride-based semiconductor region 7 disposed on the principal surface S1 of the substrate 5, a light-emitting layer 11 having a single-quantum-well structure disposed on the n-type gallium nitride-based semiconductor region 7, and a p-type gallium nitride-based semiconductor region 19 disposed on the light-emitting layer 11. The light-emitting layer 11 is disposed between the n-type gallium nitride-based semiconductor region 7 and the p-type gallium nitride-based semiconductor region 19. The light-emitting layer 11 includes a well layer 15 and barrier layers 13 and 17. The well layer 15 comprises InGaN.

Abstract: An LED (light emitting diode) chip includes a substrate, a first conduction layer formed on a top surface of the substrate, and a second conduction layer formed on the first conduction layer. The first conduction layer extends from a bottom surface of the second conduction layer to a circumferential surface of the second conduction layer, thereby surrounding the bottom surface and the circumferential surface of the second conduction layer. An active layer is sandwiched between the first and second conduction layers, to increase a contact area between the active layer and the first conduction layer and the second conduction layer.

Abstract: A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an n-type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500 nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n-layer. In one example, the LRL is an AlGaN/GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure.

Abstract: An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein.

Abstract: The present invention relates to an OLED display, and an OLED display according to an exemplary embodiment of the present invention includes a substrate member, an OLED including a first electrode formed on the substrate member, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and a cover layer formed on the second electrode and covering the OLED. The cover layer includes a cover main body and a corner-cube pattern formed on an opposite side of a side that faces the second electrode among both sides of the cover main body.

Abstract: An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.

Abstract: A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer and has a first band gap, a second barrier layer having a third band gap, and a third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The well layers comprise a first well layer having a second band gap between the first and the second barrier layers, and a second well layer between the second barrier layer and the third barrier layer. The second barrier layer is disposed between the first and the second well layers, and the third band gap is narrower than the first band gap and wider than the second band gap.

Abstract: An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device.

Abstract: A method for reduction of efficiency droop using an (Al, In, Ga)N/AlxIn1-xN superlattice electron blocking layer (SL-EBL) in nitride based light emitting diodes.

Abstract: An electrooptical device having a plurality of light-emitting regions includes a substrate, a bank disposed in a region other than the light-emitting regions on the substrate so as to surround the light-emitting regions, and a functional layer disposed in openings surrounded by the bank. The bank includes an upper bank segment and a plurality of lower bank segments having a higher wettability than the upper bank segment. The number of the lower bank segments exposed is smaller in second regions of the openings than in first regions of the openings.

Abstract: A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A light-emitting diode (LED) (101). The LED (101) includes a plurality of portions including a p-doped portion (112), an intrinsic portion (114), and a n-doped portion (116). The intrinsic portion (114) is disposed between the p-doped portion (112) and the n-doped portion (116) and forms a p-i junction (130) and an i-n junction (134) The LED (101) also includes a metal-dielectric-metal (MDM) structure (104) including a first metal layer (140), a second metal layer (144), and a dielectric medium disposed between the first metal layer (140) and the second metal layer (144). The metal layers of the MDM structure (104) are disposed about orthogonally to the p-i junction (130) and the i-n junction (134); the dielectric medium includes the intrinsic portion (114); and, the MDM structure (104) is configured to enhance modulation frequency of the LED (101) through interaction with surface plasmons that are present in the metal layers.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

Abstract: An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

Abstract: Provided is a nitride-based semiconductor light-emitting element having improved carrier injection efficiency into the well layer. The element comprises a substrate (5) formed from a hexagonal-crystal gallium nitride semiconductor; an n-type gallium nitride semiconductor region (7) disposed on a main surface (S1) of the substrate (5); a light-emitting layer (11) having a single quantum well structure disposed on the n-type gallium nitride semiconductor region (7); and a p-type gallium nitride semiconductor region (19) disposed on the light-emitting layer (11). The light-emitting layer (11) is disposed between the n-type gallium nitride semiconductor region (7) and the p-type gallium nitride semiconductor region (19). The light-emitting layer (11) comprises a well layer (15), a barrier layer (13), and a barrier layer (17). The well layer (15) is InGaN.

Abstract: A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses.

Abstract: An apparatus comprising a structure comprising a group III-nitride and a junction between n-type and p-type group III-nitride therein, the structure having a pyramidal shape or a wedge shape.

Abstract: A photon source comprising: a quantum dot; electrical contacts configured to apply an electric field across said quantum dot: and an electrical source coupled to said contacts, said electrical source being configured to apply a potential such that carriers are supplied to said quantum dot to form a bi-exciton or higher order exciton, wherein said photon source further comprises a barrier configured to increase the time which a carrier takes to tunnel to and from said quantum dot to be greater than the radiative lifetime of an exciton in the quantum dot, the quantum dot being suitable for emission of entangled photons during decay of a bi-exciton or higher order exciton.

Abstract: A nitride semiconductor laser element includes a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in this order on the substrate. At least one of the first semiconductor layer and the second semiconductor layer includes a first section forming recessed and raised portions and a second section embedding the recessed and raised portions of the first section. A region with a higher aluminum mixed crystal ratio than the second section that embeds the recessed and raised portions is disposed on top faces of the raised portions. The nitride semiconductor layer defines resonant planes, and the recessed and raised portions are formed in a shape of stripes that extend substantially parallel to the resonant planes.

Abstract: In one embodiment, a method of producing an optoelectronic nanostructure includes preparing a substrate; providing a quantum well layer on the substrate; etching a volume of the substrate to produce a photonic crystal. The quantum dots are produced at multiple intersections of the quantum well layer within the photonic crystal. Multiple quantum well layers may also be provided so as to form multiple vertically aligned quantum dots. In another embodiment, an optoelectronic nanostructure includes a photonic crystal having a plurality of voids and interconnecting veins; a plurality of quantum dots arranged between the plurality of voids, wherein an electrical connection is provided to one or more of the plurality of quantum dots through an associated interconnecting vein.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: An optical light engine is fabricated by providing a thermally conductive base having one or more mounting pedestals for elevating one or more LED die above the base's surface. The LED die are mounted on the pedestals, electrically connected, and a mold having a molding surface for molding a dome centered around the LED die is disposed on the base over the pedestal-mounted LED die. The encapsulating material is then injected through an input port disposed in the base to mold the dome around the LED die. The encapsulant material is cured and the mold is removed. In an advantageous embodiment, the light engine comprises a ceramic-coated metal base made by the low temperature co-fired ceramic-on-metal process (LTCC-M).

Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.

Abstract: A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a substrate; an underlying layer having a three-dimensional shape composed of a GaN-based compound semiconductor, disposed on at least the seed region; a first GaN-based compound semiconductor layer of a first conductivity type, an active layer composed of a GaN-based compound semiconductor, and a second GaN-based compound semiconductor layer of a second conductivity type disposed in that order on the underlying layer; a first electrode electrically connected to the first GaN-based compound semiconductor layer; and a second electrode disposed on the second GaN-based compound semiconductor layer. The top face of the seed region is the A plane, and at least one side face of the underlying layer is the S plane.

Abstract: Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the plurality of layers of the active region to extend into the pits. In some embodiments, the active region comprises a plurality of quantum wells. The pit opening region may comprise a superlattice structure. The pits may surround their corresponding dislocations and the plurality of layers may extend to the respective dislocations. At least one of the pits of the plurality of pits may originate in a layer disposed between the pit opening layer and a substrate on which the pit opening layer is provided. The active region may be a Group III nitride based active region. Methods of fabricating such devices are also provided.

Abstract: A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.

Abstract: A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.