Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: An LED having a radiation-emitting active layer (7), an n-type contact (10), a p-type contact (9) and a current spreading layer (4) is specified. The current spreading layer (4) is arranged between the active layer (7) and the n-type contact (10). Furthermore, the current spreading layer (4) has a multiply repeating layer sequence having at least one n-doped layer (44), an undoped layer (42) and a layer composed of AlxGa1-xN (43), where 0?x?1. The layer composed of AlxGa1-xN (43) has a concentration gradient of the Al content.

Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10?6/° C. or less from GaN.

Abstract: In a display device having a plurality of organic electroluminescence devices arranged on a substrate, each of the devices including a lower electrode, an organic layer at least containing a light emitting layer, and an upper electrode in this order, the light emitting layer of at least some of the organic electroluminescence devices has a first light emitting layer formed by vapor deposition and a second light emitting layer formed by thermal transfer, and the first light emitting layer emits light whose wavelength is equal to or shorter than that of blue light.

Abstract: Disclosed herein is a method of making a light emitting device comprising an LED and a molded silicon-containing encapsulant. The method includes contacting the LED with a photopolymerizable composition containing a silicon-containing resin having silicon-bonded hydrogen and aliphatic unsaturation and two metal-containing catalysts. One catalyst may be activated by actinic radiation, and the second by heat but not the actinic radiation. Polymerization of the photopolymerizable composition to form the encapsulant may be carried out by selectively activating the different catalysts. At some point before polymerization is complete, a mold is used to impart a predetermined shape to the encapsulant.

Abstract: A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less and a rise time of 0.3 milliseconds or more onto the silicon layer thereby activating the impurity ions. The rise time is defined as a time interval of a leading edge between an instant at which the pulsed light starts to rise and an instant at which the pulsed light reaches a peak energy.