Abstract: A thermoelectric element comprises a substrate with a patterned discontinuous fullerene thin film. A method of applying a patterned discontinuous fullerene thin film to a substrate comprises applying a mask to the substrate, the mask defining a conductive electric network, applying a fullerene material to the masked substrate to deposit a patterned discontinuous fullerene thin film, applying a selected bond breaking force to the network to disassociate fullerene carbon to fullerene carbon bonds without disassociating fullerene carbon to substrate bonds to form a patterned discontinuous fullerene thin film substantially a single fullerene molecule in thickness.

Abstract: The present disclosure provides a thin film transistor which includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconducting layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer. At least one of the gate electrode, the drain electrode, the source electrode includes a carbon nanotube composite layer.

Abstract: A semiconductor device and associated method for forming. The semiconductor device comprises an electrically conductive nanotube formed over a first electrically conductive member such that a first gap exists between a bottom side the electrically conductive nanotube and a top side of the first electrically conductive member. A second insulating layer is formed over the electrically conductive nanotube. A second gap exists between a top side of the electrically conductive nanotube and a first portion of the second insulating layer. A first via opening and a second via opening each extend through the second insulating layer and into the second gap.

Abstract: Nanotube films and articles and methods of making the same are disclosed. A conductive article includes an aggregate of nanotube segments in which the nanotube segments contact other nanotube segments to define a plurality of conductive pathways along the article. The nanotube segments may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining a pattern within the fabric in which the pattern corresponds to the conductive article.