Abstract: A thin film transistor has a dual semiconducting layer comprising two semiconducting sublayers. The first sublayer comprises a polythiophene and carbon nanotubes. The second sublayer comprises the polythiophene and has no carbon nanotubes. Devices comprises the dual semiconducting layer exhibit high mobility.

Abstract: The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

Abstract: An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

Abstract: Disclosed are new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Abstract: An organic light emitting display (OLED) device is disclosed. The OLED device includes a thin-film transistor (TFT), which includes a gate electrode; an active layer insulated from the gate electrode; source and drain electrodes insulated from the gate electrode and contacting the active layer; and an insulation layer interposed between the source and drain electrodes and the active layer; and an organic light-emitting element electrically connected to the TFT, wherein the insulation layer includes a first insulation sub-layer contacting the active layer; and a second insulation sub-layer formed on the first insulation sub-layer.

Abstract: Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract: An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.

Abstract: A method of manufacturing a thin film transistor array substrate includes forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming first, second, and third passivation films successively on the substrate. Over the above multi-layered passivation film forming a first photoresist pattern including a first portion formed on part of the drain electrode and on the pixel region, and a second portion. The second portion is thicker than the first portion. Then, patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern, and forming a transparent electrode pattern on the second passivation layer.

Abstract: Various aspects of the technology includes a quad semiconductor power and/or switching FET comprising a pair of control/sync FET devices. Current may be distributed in parallel along source and drain fingers. Gate fingers and pads may be arranged in a serpentine configuration for applying gate signals to both ends of gate fingers. A single continuous ohmic metal finger includes both source and drain regions and functions as a source-drain node. A set of electrodes for distributing the current may be arrayed along the width of the source and/or drain fingers and oriented to cross the fingers along the length of the source and drain fingers. Current may be conducted from the electrodes to the source and drain fingers through vias disposed along the surface of the fingers. Heat developed in the source, drain, and gate fingers may be conducted through the vias to the electrodes and out of the device.

Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

Abstract: The invention relates to a process for preparing an electronic device using a protection layer, and to improved electronic devices prepared by this process, in particular organic field effect transistors (OFETs).

Abstract: An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst.

Abstract: A method and structures to achieve improved TFTs and high fill-factor pixel circuits are provided. This system relies on the fact that jet-printed lines have print accuracy, which means the location and the definition of the printed lines and dots is high. The edge of a printed line is well defined if the printing conditions are optimized. This technique utilizes the accurate definition and placement of the edges of printed lines of conductors and insulators to define small features and improved structures.

Abstract: A first patterned contact layer, for example a gate electrode, is formed over an insulative substrate. Insulating and functional layers are formed at least over the first patterned contact layer. A second patterned contact layer, for example source/drain electrodes, is formed over the functional layer. Insulative material is then selectively deposited over at least a portion of the second patterned contact layer to form first and second wall structures such that at least a portion of the second patterned contact layer is exposed, the first and second wall structures defining a well therebetween. Electrically conductive or semiconductive material is deposited within the well, for example by jet-printing, such that the first and second wall structures confine the conductive or semiconductive material and prevent spreading and electrical shorting to adjacent devices. The conductive or semiconductive material is in electrical contact with the exposed portion of the second patterned contact layer to form, e.g.

Abstract: There is provided compounds of formula I, ambipolar semiconductor material derived from such compounds and devices comprising such ambipolar semiconductor material.

Abstract: A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.

Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.

Abstract: A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.

Abstract: The area C1 of the channel region of the drive TFT and the area C2 of the channel region of the memory TFT are set to have a relationship C1<C2 to an extent that allows predetermined hysteresis natures dependent on respective functions thereof.

Abstract: An organic transistor includes an insulating substrate, a gate electrode on the substrate, a gate insulating layer disposed over the substrate and the gate electrode, a source and a drain electrode on the gate insulating layer, a nonpolar macromolecular insulating underlayer disposed on the gate insulating layer at least between the source electrode and the drain electrode, and an organic semiconductor layer disposed on the source electrode and the drain electrode and on the insulating underlayer between the source electrode and the drain electrode.

Abstract: A carrier transport material and an electronic device are provided. The carrier transport material includes a conjugated polyelectrolyte and a functional organic molecule. The conjugated polyelectrolyte includes a conjugated backbone and at least one alkyl side-chain, where a tail end of the alkyl side-chain has a first ionic group. The functional organic molecule includes a functional main-chain and a second ionic group located at a tail end of the functional organic molecule. Electrostatic attraction is formed between the first ionic group of the conjugated polyelectrolyte and the second ionic group of the functional organic molecule, and the carrier transport material presents an electrically neutral state.

Abstract: Disclosed are semiconducting compounds having one or more pyrrolo[3,2-b]pyrrole-2,5(1H,4H)-dione 3,6-diyl units. Such compounds can be monomeric, oligomeric, or polymeric, and can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.

Abstract: It is an object to provide a thin film transistor with high speed operation, in which a large amount of current can flow when the thin film transistor is on and off-state current is extremely reduced when the thin film transistor is off. The thin film transistor is a vertical thin film transistor in which a channel formation region is formed using an oxide semiconductor film in which hydrogen is contained in an oxide semiconductor at a concentration of lower than or equal to 5×1019/cm3, preferably lower than or equal to 5×1018/cm3, more preferably lower than or equal to 5×1017/cm3, hydrogen or an OH group contained in the oxide semiconductor is/are removed, and carrier concentration is lower than or equal to 5×1014/cm3, preferably lower than or equal to 5×1012/cm3.

Abstract: Disclosed are certain oligomeric and polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide high power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, field effect transistors, and photodetectors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Abstract: A compound for an organic thin film transistor having a structure shown by the following formula (1): X1-L-Ar-L-X2??(1) wherein L is —C?C—, or —CH?CH— in a trans configuration, X1 and X2 are independently a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and their bonding positions to L are in heterocycles, Ar is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 ring carbon atoms, or a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and at least one of X1, X2 and Ar is a bi- or higher-fused ring.

Abstract: According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

Abstract: A polymer having a structure represented by: wherein R1 and R2 are independently selected from a hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group; Ar1 and Ar2 are independently an aromatic or heteroaromatic group comprising about 4 to about 30 carbon atoms, and can be optionally substituted; Ar3 and Ar4 are independently an aromatic or heteroaromatic group comprising about 4 to about 20 carbon atoms, and can be optionally substituted; “a” and “b” are independently an integer from about 1 to about 4; “c” and “d” are independently an integer from about 0 to about 2; R3, R4, R5, and R6, are independently selected from a hydrogen, a substituted or unsubstituted alkyl group, an alkoxy group, a cyano, and a halogen; and “n” represents a number from about 2 to about 5,000.

Abstract: An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property.

Abstract: A method including activating an electronic device, such as an organic thin film transistor, by exposing the device to non-ionizing radiation while the device is under an electrical field. Activation of the transistor increases the field effect mobility of the transistor.

Abstract: A copolymer having a structure represented by: wherein R1 and R2 are independently selected from a hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group; Ar1 and Ar2 are independently an aromatic or heteroaromatic group including about 4 to about 30 carbon atoms, and can be optionally substituted; a and b are independently an integer from 1 to about 4; Ar3 and Ar4 are independently an aromatic or heteroaromatic group comprising about 4 to about 20 carbon atoms, and can be optionally substituted; c and e are independently an integer from about 0 to about 2; d is 1 to 4 and the carbon-carbon double bond is in the E-configuration; and n represents a number from 2 to about 5,000.

Abstract: A method for manufacturing a thin film transistor array panel, including: sequentially forming a first silicon layer, a second silicon layer, a lower metal layer, and an upper metal layer on a gate insulating layer and a gate line; forming a first film pattern on the upper metal layer; forming a first lower metal pattern and a first upper metal pattern that includes a protrusion, by etching the upper metal layer and the lower metal layer; forming first and second silicon patterns by etching the first and second silicon layers; forming a second film pattern by ashing the first film pattern; forming a second upper metal pattern by etching the first upper metal pattern; forming a data line and a thin film transistor by etching the first lower metal pattern and the first and second silicon patterns; and forming a passivation layer and a pixel electrode on the resultant.

Abstract: In a thin film transistor, first and second thin film transistors are connected to an Nth gate line and an Mth data line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode connected to an (N+1)th gate line, a semiconductor layer overlapping with the gate electrode, a source electrode connected to the second sub pixel electrode and partially overlapping with the gate electrode, and a drain electrode facing the source electrode. A first auxiliary electrode is connected to the drain electrode and arranged on the same layer as the first and second sub pixel electrodes. An opposite electrode is arranged on the same layer as the gate line and at least partially overlaps with the first auxiliary electrode with at least one insulating layer disposed therebetween.

Abstract: A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs.

Abstract: The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.

Abstract: Disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Abstract: An organic light-emitting display device may include a substrate; a plurality of thin film transistors (TFTs) on the substrate; a plurality of first electrodes respectively on the TFTs; a pixel-defining layer between the first electrodes, the pixel-defining layer including a covered portion and an uncovered portion; a plurality of organic layers respectively on the first electrodes, each organic layer including an emission layer; a second electrode covering at least a part of the organic layers and the pixel-defining layer, a portion of the pixel-defining layer covered by the second electrode defining the covered portion, wherein at least one outgassing hole is in the uncovered portion of the pixel-defining layer, the uncovered portion being an exposed area of the pixel-defining layer.

Abstract: An organic light emitting display includes: a substrate, a buffer layer arranged on the substrate, a semiconductor layer arranged on the buffer layer, a gate insulating layer arranged on the semiconductor layer, a gate electrode arranged on the gate insulating layer, an inter-layer dielectric layer arranged on the gate electrode, a source/drain electrode arranged on the inter-layer dielectric layer, an insulating layer arranged on the source/drain electrode, an non-transmissive layer arranged on the insulating layer; and an organic light emitting diode arranged on the insulating layer.

Abstract: A carbon nanotube composite in which a conjugated polymer containing repeating units containing a fused heteroaryl unit having a nitrogen-containing double bond in the ring, and a thiophene unit is attached to at least a part of the surface of a carbon nanotube. The present invention reduces the hysteresis of a field-effect transistor having a semiconductor layer containing a carbon nanotube.

Abstract: To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Abstract: An organic light emitting diode (OLED) display according to an exemplary embodiment of the invention includes: a display substrate including a plurality of pixel areas; a tilt layer formed on the display substrate of each of the plurality of pixel areas, and having a tilt angle with respect to the display substrate; a first electrode formed on the tilt layer; an organic emission layer formed on the first electrode; a second electrode formed on the organic emission layer; an encapsulation substrate disposed on the second electrode and in parallel with the display substrate; and a prism sheet formed on the encapsulation substrate and having a plurality of prisms.

Abstract: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.

Abstract: In accordance with some embodiments, logical circuits comprising carbon nanotube field effect transistors are disclosed herein.

Abstract: A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Abstract: The presently disclosed subject matter can include or consist of the creation and manufacture of electrochromic thin film transistors, either self-sustaining or not, with lateral or vertical structure, deposited on any kind of functionalized substrate, referred to as electrochromic substrate, or non-functionalized substrate. The electrolyte material and the presence or not of an ultra-thin membrane can act as dielectric element. The electrochromic material can act as active semiconductor of the channel region. The gate, source and drain electrodes can be based on metal materials, such as Titanium, Gold, Aluminum, or degenerate semiconductive oxides, like Indium and Zinc oxide, Gallium-doped Zinc oxide. The device operation control process can be made by means of electronic and ionic current, and the off-state to on-state switch, or vice-versa, can be followed by a change of color of the device.

Abstract: A stacked structure including an organic layer; a conductor or a semiconductor layer; a protective layer made of an insulating material and covering at least a part of a top surface or an undersurface of the organic layer; and a plurality of grains an outside of each of which is covered with an affinity layer that has an affinity with the insulating material, the plurality of grains being dispersed in the protective layer.

Abstract: This invention generally relates to organic electronic devices and to methods for their fabrication. More particularly we will describe organic thin film transistor (TFT) structures and their fabrication. An organic electronic device, the device comprising: a substrate supporting a first electrode; a spacer structure over said substrate; a second electrode over said spacer structure and at a height above said first electrode; and a layer of organic semiconducting material over said first and second electrodes to provide a conducting channel between said first and second electrodes; and wherein a majority of said first electrode is laterally positioned to one side of said channel and a majority of said second electrode is laterally positioned to the other side of said channel.