Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

Abstract: The present invention relates to a binuclear ruthenium complex dye having a higher absorption coefficient and capable of absorbing light of longer wavelength for realizing a photoelectric conversion element and a photochemical cell which may convert solar light into electricity over a wide wavelength range and exhibit high photoelectric conversion efficiency; and a binuclear ruthenium complex dye for realizing a photoelectric conversion element and a photochemical cell which may have high durability.

Abstract: A process for producing high performance organic thin film transistors in which the molecules in the organic thin film are highly ordered and oriented to maximize the mobility of current charge carriers. The uniform monolayer surface over various substrate materials so formed, result in a more reproducible and readily manufacturable process for higher performance organic field effect transistors that can be used to create large area circuits using a range of materials.

Abstract: A thin film chalcogenide photovoltaic device and method for forming the same are disclosed. The thin film chalcogenide photovoltaic device includes a first electrode, a second electrode and an active layer disposed between the first electrode and the second electrode, wherein the active layer includes a p-type chalcogenide semiconductor layer, an n-type inorganic semiconductor layer, and an n-type carbon-containing material layer formed between the p-type chalcogenide semiconductor layer and the n-type inorganic semiconductor layer.

Abstract: A combinationally doped semiconductor layer, a double heterojunction bipolar transistor (DHBT) including a combinationally doped semiconductor layer, and a method of making a combinationally doped semiconductor layer employ a combination of carbon and beryllium doping. The combinationally doped semiconductor layer includes a first sublayer of a semiconductor material doped substantially with beryllium and a second sublayer of the semiconductor material doped substantially with carbon. The DHBT includes a carbon-beryllium combinationally doped semiconductor layer as a base layer. The method of making a combinationally doped semiconductor layer includes growing a first sublayer of the semiconductor layer, the first sublayer being doped substantially with beryllium and growing a second sublayer of the semiconductor layer, the second sublayer being doped substantially with carbon.

Abstract: An organic/inorganic hybrid photovoltaic device architecture. In some variations, power conversion efficiencies approach 1%. Some variations include an unexpected order of magnitude improvement of power conversion efficiency approaching 5%. Methods of fabricating a photovoltaic device, including depositing over a first electrode an organic semiconductor layer; depositing over the organic semiconductor layer a cross-linking ligand layer; depositing over the cross-linking ligand layer an inorganic nanocrystal layer; and depositing a second electrode over the inorganic nanocrystal layer.

Abstract: An electric transport component may include a substrate provided with a barrier structure with a first inorganic layer, an organic decoupling layer and a second inorganic layer, wherein the organic decoupling layer is sandwiched between the first and the second inorganic layer, and at least one electrically conductive structure distributed in a plane defined by the organic decoupling layer, and that is accommodated in at least one trench in the organic decoupling layer. A method of manufacturing an electric transport component may include the steps of providing a first inorganic layer, providing a first organic decoupling layer, forming at least one trench in the organic decoupling layer, depositing an electrically conductive material in the at least one trench, and providing a second inorganic layer. The component may be applied for example in opto-electrical and electro-optical devices.

Abstract: Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at individual SWNT/P3HT heterojunctions indicate that both semiconducting (s-) and metallic (m-) SWNTs function as excellent hole acceptors; electrical transport and gate voltage dependent photocurrent indicate that P3HT p-dopes both s-SWNT and m-SWNT, and exciton dissociation is driven by a built-in voltage at the heterojunction. Some embodiments include a mm2 scale SWNT/P3HT bilayer hybrid photovoltaics using horizontally aligned SWNT arrays, which exhibit greater than 90% effective external quantum efficiency, among other things, which advantageously provide carbon nanomaterial based low cost and high efficiency hybrid photovoltaics.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: A nano/micro-sized diode and a method of preparing the same, the diode including: a first electrode; a second electrode; and a diode layer that is disposed between the first electrode and the second electrode. The diode layer includes a first layer and a second layer. The first layer is disposed on the first electrode and has a first surface that is electrically connected to the first electrode, and an opposing second surface that has a protrusion. The second layer is disposed between the first layer and the second electrode and has a first surface having a recess that corresponds to the protrusion, and an opposing second surface that is electrically connected to the second electrode.

Abstract: There is disclosed a method for preparing the surface of a metal substrate. The present disclosure also relates to an organic photovoltaic device comprising a metal substrate made by such method. Also disclosed herein is an inverted photosensitive device comprising a reflective electrode comprising stainless steel foil, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode over the donor-acceptor heterojunction.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: Provided is a photoelectric conversion device with high conversion efficiency in which the light loss due to light absorption in a window layer is significantly reduced by using a light-transmitting semiconductor layer comprising an organic compound and an inorganic compound. Specifically, the photoelectric conversion device includes: over one surface of a crystalline silicon substrate, a first silicon semiconductor layer; a light-transmitting semiconductor layer; a second silicon semiconductor layer which is partially formed on the light-transmitting semiconductor layer; and a first electrode. The photoelectric conversion device further includes: a third silicon semiconductor layer on the other surface of the crystalline silicon substrate; a fourth silicon semiconductor layer formed on the third silicon semiconductor layer; and a second electrode formed on the fourth silicon semiconductor layer.

Abstract: A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm2/V-sec, and more preferably greater than 1 cm2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

Abstract: The present invention relates to a binuclear ruthenium complex dye having a higher absorption coefficient and capable of absorbing light of longer wavelength for realizing a photoelectric conversion element and a photochemical cell which may convert solar light into electricity over a wide wavelength range and exhibit high photoelectric conversion efficiency; and a binuclear ruthenium complex dye for realizing a photoelectric conversion element and a photochemical cell which may have high durability.

Abstract: An object of the present invention is to provide a photoelectric conversion element having excellent photoelectric conversion efficiency and durability. To achieve the object, the present invention provides a photoelectric conversion element including a semiconductor electrode (70) that has a porous semiconductor layer (30) onto which a dye (40) is adsorbed, a counter electrode (60) that is provided so as to face the semiconductor layer (30) of the semiconductor electrode (70), and an electrolyte (50) that contains a radical compound having an average molecular weight of 200 or more and is positioned between the semiconductor electrode (70) and the counter electrode (60).

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: An electro-optical device includes a substrate on which first and second electrodes are formed. A plurality of nanoparticles are arrayed on the surface of the substrate between the first and second electrodes. The arrayed nanoparticles exhibit plasmonic activity in at least one wavelength band. A plurality of linking molecules are coupled between respective adjacent ones of the nanoparticles and between each of the electrodes and nanoparticles that are adjacent to the electrodes. The linking molecules are selected to exhibit photo-activity that is complementary to the arrayed nanoparticles.

Abstract: An organic EL device is provided with a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer between an anode and a cathode, wherein the hole injection layer is obtained by doping a hole transport material with an electron-accepting impurity, and the ionization potential Ip(HIL) of the material of the hole injection layer that composes the hole injection layer (also referred to as a hole injection material in the present description), the ionization potential Ip(HTL) of the hole transport material, and the ionization potential Ip(EML) of the material of the light-emitting layer (also referred to as a light-emitting layer material in the present description) respectively satisfy the relationship of Ip(EML)>Ip(HTL)?Ip(HIL)?Ip(EML)?0.4 eV.

Abstract: The present invention relates to an organic metal dye comprising fused heterocyclic derivatives, and to a photoelectric element and to a dye-sensitized solar cell using the organic metal dye.

Abstract: Dye-sensitized solar cells that include coal-based dye materials and methods of manufacturing such solar cells are disclosed.

Abstract: The present invention describes a method of producing a photovoltaic solar cell with stoichiometric p-type copper indium gallium diselenide (CuInxGa1-xSe2) (abbreviated CIGS) as its absorber layer and II-IV semiconductor layers as the n-type layers with electrodeposition of all these layers. The method comprises a sequence of novel procedures and electrodeposition conditions with an ionic liquid approach to overcome the technical challenges in the field for low-cost and large-area production of CIGS solar cells with the following innovative advantages over the prior art: (a) low-cost and large-area electrodeposition of CIGS in one pot with no requirement of post-deposition thermal sintering or selenization; (b) low-cost and large-area electrodeposition of n-type II-VI semiconductors for the completion of the CIGS solar cell production; and (c) low-cost and large-area deposition of a buffer layer of CdS or other compounds with a simple chemical bath method.

Abstract: A solid-state p-n heterojunction comprising an organic p-type material in contact with an n-type material wherein said n-type material is surface-sensitised by at least two sensitizing agents comprising an energy donor sensitizing agent and an energy acceptor sensitizing agent and optionally at least one intermediate sensitizing agent, wherein the emission spectrum of the donor sensitizing agent overlaps with the absorption spectrum of the acceptor sensitizing agent and/or at least one intermediate sensitizing agent where present, and the emission spectrum of at least one intermediate sensitizing agent where present overlaps with the absorption spectrum of the acceptor sensitizing agent and wherein the acceptor sensitizing agent individually has a maximum Absorbed Photon to electron Conversion Efficiency of no less than 40% in an equivalent heterojunction when used as sole sensitizing agent.

Abstract: The present invention discloses a solar cell having a multi-layered structure that is used to generate, transport, and collect electric charges. The multi-layered nanostructure comprises a cathode, a conducting metal layer, a photo-active layer, a hole-transport layer, and an anode. The photo-active layer comprises a tree-like nanostructure array and a conjugate polymer filler. The tree-like nanostructure array is used as an electron acceptor while the conjugate polymer filler is as an electron donor. The tree-like nanostructure array comprises a trunk part and a branch part. The trunk part is formed in-situ on the surface of the conducting metal layer and is used to provide a long straight transport pathway to transport electrons. The large contact area between the branch part and the conjugate polymer filler provides electron-hole separation.

Abstract: Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract: Disclosed herein are an organic memory device and a method for fabricating the device. The organic memory device may include a first electrode, a second electrode and an organic active layer wherein the organic active layer includes an upper organic material layer formed of an electrically conductive organic material containing heteroatoms and a lower organic material layer formed of an electrically non-conductive organic material containing heteroatoms. Because the organic memory device exhibits improved thermal stability and non-volatility, it may be well suited for use in nonvolatile large-capacity storage units. Flexible electrodes may be used in the organic memory device to fabricate flexible memory devices.

Abstract: There is provided a high-sensitivity organic semiconductor radiation/light sensor and a radiation/light detector which can detect rays in real time. In the high-sensitivity organic semiconductor radiation/light sensor, a signal amplification wire 2 is embedded in an organic semiconductor 1. Carriers created by passage of radiation or light are avalanche-amplified by a high electric field generated near the signal amplification wire 2 by means of applying a high voltage to the signal amplification wire 2, thus dramatically improving detection efficiency of rays. Hence, even rays exhibiting low energy loss capability can be detected in real time with high sensitivity.

Abstract: The present invention provides a solid-state p-n heterojunction comprising a p-type material in contact with an n-type material wherein said n-type material comprises SnO2 having at least one surface-coating of a surface coating material having a higher band-gap than SnO2 and/or a conduction band edge closer to vacuum level than SnO2, such as MgO. The invention also provides optoelectronic devices such as solar cells or photo sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device.

Abstract: An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.

Abstract: Disclosed is a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. Also disclosed is a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, comprising: positioning at least one organic window layer between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. Also disclosed is a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method.

Abstract: A solar cell including a quantum dot, an electron conductor, and a rigid bridge molecule disposed between the quantum dot and the electron conductor. The rigid bridge molecule may include a first anchor group that bonds to the quantum dot and a second anchor group that bonds to the electron conductor. The solar cell may include a hole conductor that is configured to reduce the quantum dot once the quantum dot absorbs a photon and ejects an electron through the rigid bridge molecule and into the electron conductor.

Abstract: Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at individual SWNT/P3HT heterojunctions indicate that both semiconducting (s-) and metallic (m-) SWNTs function as excellent hole acceptors; electrical transport and gate voltage dependent photocurrent indicate that P3HT p-dopes both s-SWNT and m-SWNT, and exciton dissociation is driven by a built-in voltage at the heterojunction. Some embodiments include a mm2 scale SWNT/P3HT bilayer hybrid photovoltaics using horizontally aligned SWNT arrays, which exhibit greater than 90% effective external quantum efficiency, among other things, which advantageously provide carbon nanomaterial based low cost and high efficiency hybrid photovoltaics.

Abstract: A solar cell may including a quantum dot, an electron conductor and a bridge molecule disposed between the quantum dot and the electron conductor. The bridge molecule may include a quantum dot anchor that bonds to the quantum dot and an electron conductor anchor that bonds to the electron conductor. The quantum dot anchor may be an electron-rich anchor group that includes a Group 5A element. The solar cell may also include a hole conductor that is configured to reduce the quantum dot once the quantum dot absorbs a photon and ejects an electron through the bridge molecule and into the electron conductor.

Abstract: A photovoltaic device and method of manufacturing is disclosed. In one embodiment, the device includes a silicon layer and first and second organic layers. The silicon layer has a first face and a second face. First and second electrodes electrically are coupled to the first and second organic layers. A first heterojunction is formed at a junction between the one of the faces of the silicon layer and the first organic layer. A second heterojunction is formed at a junction between one of the faces of the silicon layer and the second organic layer. The silicon layer may be formed without a p-n junction. At least one organic layer may be configured as an electron-blocking layer or a hole-blocking layer. At least one organic layer may be comprised of phenanthrenequinone (PQ). A passivating layer may be disposed between at least one of the organic layers and the silicon layer. The passivating layer may be organic. At least one of the organic layers may passivate a surface of the silicon layer.

Abstract: A solar cell including a quantum dot, an electron conductor, and a conjugated bridge molecule disposed between the quantum dot and the electron conductor. The conjugated bridge molecule may include a quantum dot anchor that bonds to the quantum dot and an electron conductor anchor that bonds to the electron conductor. In some instances, the quantum dot anchor and/or the electron conductor anchor may independently include two anchoring moieties that can form ring structures with the quantum dot and/or the electron conductor. The solar cell may further include a hole conductor that is configured to reduce the quantum dot once the quantum dot absorbs a photon and ejects an electron through the conjugated bridge molecule and into the electron conductor.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: An optoelectronic device is formed having a sandwich structure, which consists of an inorganic semiconductor layer, an organic semiconductor layer, and another inorganic semiconductor layer, where both of the two inorganic semiconductor layers are produced by a solution process.

Abstract: A nitride semiconductor device includes: a substrate containing Si; a channel layer provided on the substrate and made of nitride semiconductor material; a barrier layer provided on the channel layer and made of nitride semiconductor material; a first and second main electrode connected to the barrier layer; and a control electrode provided between the first main electrode and the second main electrode on the barrier layer. The substrate includes at least one layer having a resistivity of 1 k?/cm or more.

Abstract: A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.

Abstract: A dye sensitized solar cell, comprising a-heteroleptic polypyridil complex of Ru, Os or Fe. The donating ligand has an extended conjugated n-system increasing the light absorbance and keeing the LUMO energy level higher than that of the anchoring ligand. A compacting compound whose molecular structure comprises a terminal group, a hydrophobic part and an anchoring? group may be co-adsorbed together with the dye on the semi-conductive metal oxide layer of the photoanode, forming a dense mixed self-assembled monolayer.

Abstract: A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.

Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.

Abstract: A photosensitizer attaining high incident photon-to-current conversion efficiency and having long durability life and a solar cell using the photosensitizer are provided. A solar cell 1 includes: a semiconductor electrode 10 including a substrate 18 having a conductive film 16 formed on its surface and a porous semiconductor layer 20 formed on the substrate 18; a counter electrode 12 including a substrate 30 having a conductive film 28 formed on its surface; and a carrier transport layer 14 including conductive material, posed between the semiconductor electrode 10 and the counter electrode 12. The surface of porous semiconductor layer 20 is caused to carry a light absorber 22 including inorganic material 24 carrying organic molecules 26 each having an aromatic ring.

Abstract: An organic thin film transistor (OTFT), a method of manufacturing the same, and a biosensor using the OTFT are provided. The OTFT includes a gate electrode, a gate insulating layer, source and drain electrodes, and an organic semiconductor layer disposed on a substrate and further includes an interface layer formed between the gate insulating layer and the organic semiconductor layer by a sol-gel process. The gate insulating layer is formed of an organic polymer, and the interface layer is formed of an inorganic material. The OTFT employs the interface layer interposed between the gate insulating layer and the organic semiconductor layer so that the gate insulating layer can be protected from the exterior and adhesion of the gate insulating layer with the organic semiconductor layer can be improved, thereby increasing driving stability. Also, since the OTFT can use a plastic substrate, the manufacture of the OTFT is inexpensive so that the OTFT can be used as a disposable biosensor.

Abstract: A circuit board includes: a substrate; source and drain electrodes formed on the substrate; an organic semiconductor layer formed on the source and drain electrodes; a gate insulating layer formed on the organic semiconductor layer; and a gate electrode formed on the gate insulating layer, wherein: the substrate includes a first part, a second part, and a third part interposed between the first and second parts and a thickness of the first part or a thickness of the second part is greater than that of the third part; the source electrode is formed on the first part; the drain electrode is formed on the second part; a part of the organic semiconductor layer is formed on the third part; and a thickness of the gate insulating layer disposed on the first and second parts is smaller than that of the gate insulating layer disposed on the third part.

Abstract: It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.

Abstract: A hybrid photovoltaic cell comprising a composite substrate of a nanotube or nanorod array of metal oxide infiltrated with a monomer precursor and subsequently polymerized in situ via UV irradiation. In an embodiment, the photovoltaic cell comprises an electron accepting TiO2 nanotube array infiltrated with a photo-sensitive electron donating conjugated polymer. The conjugated polymer may be formed in situ through UV irradiation polymerizing a monomer precursor such as 2,5-diiodothiophene (DIT).