Abstract: An organic light emitting device and a method for fabricating the same are discussed. According to an embodiment, the method includes forming a mother substrate structure including organic light emitting devices including TFTs and first electrodes, each first electrode electrically connected to the corresponding TFT and being a part of an OLED to be formed; forming first and second conductive layers to form a power line in each organic light emitting device; forming a dummy layer on the first electrodes and the second conductive layer; performing at least one of scribing and grinding processes on the mother substrate structure to divide the mother substrate structure into sub-substrate structures; removing the dummy layer from the first electrodes and the second conductive layer after the performing step; and forming a light emitting layer and a second electrode on the first electrode in one of the sub-substrate structures to form the OLED.

Abstract: According to an embodiment, the method of manufacturing a thin film transistor array panel includes forming a gate wire, a data wire, and a thin film transistor on a substrate and depositing an organic material layer on the gate wire, the data wire, and the thin film transistor. The method further includes forming an optical pattern on the upper surface of the organic material layer, depositing a reflecting electrode layer on the organic material layer, etching the reflecting electrode layer, etching the organic material layer after etching the reflecting electrode layer, and forming a pixel electrode on the reflecting electrode layer. Accordingly, the optical pattern on the upper surface of organic material may be transcribed to the reflecting electrode layer without damage and with clarity.

Abstract: An opto-electronic device, such as an OLED or organic solar cell, having an electrode structure for use as a cathode. The electrode structure includes an electrically conductive layer and an inorganic layer, wherein the inorganic layer is made of at least one oxide-based alkali or alkaline earth metal intercalation compound. The intercalation compound having the chemical formula of Ax(MxOz), where x, y, z are positive integers greater than zero, A is an alkali metal or alkaline earth element, M is a metal, transitional metal or metallic alloy, and O is oxygen. Furthermore, a buffer layer made of alkali oxides or halides, or alkaline earth oxides or halides can be provided between the conductive layer and the inorganic layer.

Abstract: Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode.

Abstract: An organic electro luminescence device is provided. In the organic electro luminescence device, first and second electrodes are arranged to face each other and to be spaced apart from each other by a predetermined interval, and includes sub-pixels for reproducing an image. An array element is formed in the first substrate per sub-pixel, and includes at least one TFT. An organic electro luminescent diode is formed in the second substrate per sub-pixel. A spacer covered with a metal portion for electrically connecting the first and second substrates. A drain electrode of the TFT and a first electrode (anode) of the organic electro luminescent diode are electrically connected by the spacer covered with the metal portion.

Abstract: An organic light emitting diode (OLED) display panel is provided. The OLED display panel includes a substrate, a conductive layer, an active matrix pixel array and several thin film transistors (TFTs). The conductive layer having several openings is disposed above the substrate. The active matrix pixel array having several pixels is disposed above the conductive layer. Each pixel has a display region and a non-display region. The display regions correspond to the openings. The TFTs are correspondingly disposed inside the pixels and correspondingly positioned inside the non-display regions. Each TFT includes a channel layer, a source, a drain and a gate. The channel layer is disposed above the conductive layer. The source and the drain are disposed above channel layer and respectively contact with the two opposite sides of the channel layer. The gate is disposed above the channel layer and positioned between the source and the drain.

Abstract: A top emission type organic light emitting display includes an organic light emitting diode in which an anode, a light emitting layer and a transparent cathode are successively deposited. The cathode has a sandwiched structure in which a transparent oxide layer is inserted between the metal layers. Exemplary embodiments of the cathode of the present invention have better electric conductivity than a conventional cathode of an organic light emitting diode device, and thus has lower power consumption than a conventional top emission organic light emitting display with similar light transmission.

Abstract: The present invention relates to a display device, such as an organic electroluminescent device, for preventing corrosion of a signal line. A display device according to the present invention, comprising a substrate; a first electrode layer disposed over the substrate; a second electrode layer disposed to cover the first electrode layer and configured to electrically communicate with the first electrode layer; and a pixel disposed over the substrate, wherein a signal line is defined as an electrode layer including the first electrode layer and the second electrode layer, wherein the first electrode layer is in electrical communication with the pixel. The display device according to the present invention can prevent the material of the signal line from being corroded. Also, the device can prevent the reduction of brightness and the increase of power consumption.

Abstract: An organic light emitting device according to an embodiment includes a thin film transistor substrate including a plurality of thin film transistors and an over-coating film formed on the thin film transistors. The over-coating film includes a curved surface on at least two pixels among pixels of different colors and the slope angles of depressed portions forming the curved surface are respectively different from each other depending on the colors of the pixels. A plurality of first electrodes formed on the over-coating film includes a surface formed according to the curved surface, an organic light emitting member formed on the first electrodes includes a surface formed according to the curved surface, and a second electrode formed on the organic light emitting member includes a surface formed according to the curved surface. Slope angles of the depressed portions increase according to a decrease of wavelengths of the colors of the pixels.

Abstract: An organic EL device having a light emitting element including a first electrode (2), a second electrode (4) of transparent conductive film, and a light emitting organic material layer (9) formed between said first electrode (2) and said second electrode (4), wherein said transparent conductive film is made of a metal oxide deficient in oxygen as compared with stoichiometric composition. Since the transparent conductive film (4) directly in contact with the light emitting organic material layer (9) over a wide area is made of the metal oxide deficient in oxygen as compared with stoichiometric composition, the transparent conductive film can absorb moisture and oxygen which may possibly absorbed by the light emitting organic material layer so that the light emitting organic material layer is prevented from deteriorating, and the long emission lifetime of the element can be ensured.

Abstract: In the manufacture of a semiconductor device, there are provided a method that enables reduction in the number of manufacturing steps thereof and a structure for realizing the method, to thereby realize improvement in yield and reduction in manufacturing cost. Wirings (source wiring, drain wiring, and the like), which are respectively formed in a row direction and a column direction on an element substrate, are formed of the same conductive film. In this case, one of the respective wirings in the row direction and the column direction is discontinuously formed at a portion where the wirings intersect with each other, and an insulating film is formed on the wirings. Thereafter, a connection wiring for connecting discontinuous wirings is formed of the same film as that for forming an electrode provided on the insulating film. As a result, a continuous wiring is formed.

Abstract: An object is to provide a manufacturing method of a light-emitting device including an organic compound layer, in which a desired organic compound layer is easily formed using a plurality of evaporation materials. A first organic compound layer containing a plurality of evaporation materials is formed over a first substrate. The first organic compound layer is formed using a mixture formed by mixture of the plurality of evaporation materials in advance. A second substrate is placed at a position facing the first substrate so as to face the first organic compound layer provided for the first substrate. The first organic compound layer as an evaporation source is heated to be vaporized and a desired second organic compound layer is formed over the second substrate placed so as to face the first substrate. Accordingly, a light-emitting device is manufactured.

Abstract: An organic light emitting diode display includes a substrate on which a transistor area and a capacitor area are defined, a semiconductor layer formed at the transistor area, and a capacitor having a plurality of electrodes. The plurality of electrodes include a first electrode, a second electrode that is disposed on the first electrode with an insulation layer formed between the first and second electrodes, and a third electrode that is disposed on the second electrode with an insulation layer formed between the second and third electrodes and connected to the first electrode through at least two contact holes.

Abstract: An organic semiconductor device having a gate electrode, a source electrode, a drain electrode, an organic semiconductor layer, a gate insulation layer, and a substrate. The substrate of the semiconductor device having an underlayer including an organic polymer material having a liquid crystal core. The underlayer is oriented in a specific direction formed between the substrate and the organic semiconductor layer so as to orient the organic semiconductor layer along the orientation of the underlayer.

Abstract: An organic light emitting diode (OLED) display. The OLED display includes: a lower electrode formed on a layer on an insulating substrate having a thin film transistor. The lower electrode is electrically connected to the thin film transistor. An auxiliary electrode is formed on the same layer as the lower electrode, and a pixel defining layer is formed on edges of the lower electrode, thereby defining an opening which exposes a portion of the lower electrode. An organic layer is formed on the portion of the lower electrode exposed by the opening, and an upper electrode is formed on an entire surface of the insulating substrate and electrically connected to the auxiliary electrode. An edge of the auxiliary electrode may have a taper angle of at least 90°.

Abstract: A light-emitting element has a layer including an organic material between a first electrode and a second electrode, and further has a layer including a metal oxide between the second electrode and the layer including the organic material, where these electrodes and layers are laminated so that the second electrode is formed later than the first electrode. The light-emitting element is suppressed damage caused to a layer including an organic material during deposition by sputtering and a phenomenon such as short circuit between electrodes.

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same, in which electric field influence between first and second electrodes is reduced in an edge region of a unit pixel. The OLED includes a substrate, and a thin film transistor (TFT) located on the substrate. A passivation layer is located on the TFT over substantially an entire surface of the substrate, and has a via hole for exposing source or drain electrode, and a groove. A first electrode on the passivation layer is in electrical contact with the exposed source or drain electrode through the via hole, and has an edge located in the groove. A pixel defining layer is located on the first electrode and has an opening for exposing a predetermined portion of the first electrode. An organic layer is in contact with the predetermined portion, and a second electrode is formed on the organic layer.

Abstract: An organic light emitting device includes a substrate, first and second ohmic contacts formed on the substrate, a driving semiconductor formed on the substrate and the first and second ohmic contacts and including polysilicon, a driving input electrode electrically connected to the first ohmic contact, a driving output electrode electrically connected to the second ohmic contact, a first gate insulating layer formed on the driving semiconductor, the driving input electrode, and the driving output electrode, and a driving control electrode formed on the first gate insulating layer and overlapping the driving semiconductor.

Abstract: A display unit and method of fabricating same are provided. The display unit includes a plurality of organic electroluminescent devices, each including an organic layer portion including at least a hole-transport layer and a luminescent layer which are stacked each other, and two electrodes sandwiching the organic layer portion. The luminescent layers of the individual organic electroluminescent devices have different thicknesses. The luminescent layer in each organic electroluminescent device contains an organic material having substantially the same HOMO level as that of a hole-transporting material constituting the hole-transport layer, the content of the organic material being set according to the thickness of the luminescent layer.

Abstract: An organic compound film is composed of a hole transporting region, a first mixed region, a light emitting region, a second mixed region, and an electron transporting region that are connected to one another. With the organic compound film thus structured, the blue organic light emitting device obtained is free from interfaces between layers which are present in the conventional laminate structure. When pigment doping is added to this device structure, a white organic light emitting device is obtained. A blue or white organic light emitting device having high light emission efficiency and long lifetime is provided by this method. When this organic light emitting device is combined with color conversion layers or color filters, a full color display device that consumes less power and lasts long can be obtained.

Abstract: A light-emitting component comprising organic layers and having several layers between a base contact and a cover contact, the corresponding process for its preparation. At least one polymer layer and two molecular layers are arranged, so that when the cover contact is a cathode, the layer adjacent to the cover contact is designed as an electron-transporting molecular layer and is doped with an organic or inorganic donor, the electron-transporting layer comprising a principal organic substance and a donor-type doping substance, the molecular weight of the dopant being more than 200 g/mole. When the cover contact is an anode, the layer adjacent to the cover contact is designed as a p-doped hole-transporting molecular layer and is doped with an organic or inorganic acceptor, the hole-transporting layer comprising a principal organic substance and an acceptor-like doping substance, the molecular weight of the dopant being more than 200 g/mole.

Abstract: Light-emitting elements having high emission efficiency and long lifetime can be provided. By forming light-emitting devices including the light-emitting elements, the light-emitting devices having low power consumption and long lifetime can be provided. A light-emitting device comprises a light-emitting element including a light-emitting layer between a first electrode and a second electrode. The light-emitting layer includes a first organic compound having a hole-transporting property, a second organic compound having an electron transporting property, and an organometallic complex. A central metal of the organometallic complex is an element belonging to one of Group 9 and Group 10, and a ligand of the organometallic complex is a ligand having a pyrazine skeleton.

Abstract: Provided are an electronic device including a bank structure and a method of manufacturing the same. The method of manufacturing the electronic device requires a fewer number of processes and comprises a direct patterning of insulating layers, such as fluorinated organic polymer layers, is possible using cost-efficient techniques such as inkjet printing.

Abstract: An organic light emitting device, and a method of fabricating the same, has a cathode electrode that can prevent oxygen or moisture from infiltrating. The organic light emitting device of the present invention has a lower electrode, an organic thin film layer and an upper electrode successively formed on the substrate. The upper electrode has at least two-layered thin films having different grain density and grain size. A lower film of the at least two-layered thin films of the upper electrode has a first Al thin film having a lower grain density and larger grain size than an upper of the at least two-layered thin films. The upper film has a second Al thin film having relatively higher grain density and smaller grain size than the first Al thin film.

Abstract: A light emitting device and a producing method thereof are provided. The light emitting device is configured such that a transparent electrode layer, an organic light emitting layer and a counter electrode layer are laminated in this order on a transparent substrate, in which the transparent electrode layer is formed of mesh-like metal material and a transparent conductive polymer. The producing method includes: (a) printing a solution in which metal particles are dispersed in a solvent in a mesh shape on a transparent substrate so as to form a mesh-like metal layer on the transparent substrate; (b) forming a transparent conductive polymer layer on the mesh-like metal layer; (c) forming an organic light emitting layer on the transparent conductive polymer layer; and (d) forming a counter electrode layer on the organic light emitting layer.

Abstract: A method is provided for constructing a nanodevice. The method includes: fabricating an electrode on a substrate; forming a nanogap across the electrode; dispersing a plurality of nanoobjects onto the substrate using electrophoresis; and pushing one of the nanoobjects onto the electrode using a tip of an atomic force microscope, such that the nanoobject lies across the nanogap formed in the electrode. In addition, remaining nanoobjects may also be pushed away from the electrode using the atomic force microscope, thereby completing construction of a nanodevice.

Abstract: A method for fabricating a pixel structure of an OELD includes the following steps. First, a first gate, a scan line and a second gate are formed on a substrate. Next, a gate insulation layer is formed on the substrate to cover the first gate, the scan line and the second gate. Then, on the gate insulation layer, a first channel layer and a second first channel layer are formed, which are located over the first gate and the second gate, respectively. Afterwards, a first source and a first drain beside the first channel layer and a data line are formed; meanwhile, a second source and a second drain beside the second channel layer, and a cathode electrically connected to the second drain are formed. Further, an organic functional layer is formed on the cathode. Finally, an anode is formed on the organic functional layer.

Abstract: An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.

Abstract: Techniques are described for forming a separating structure on an OLED device that is free from deformation. The separating structure prevents adjacent electrodes from contacting one another.

Abstract: An organic electroluminescent display device according to an embodiment includes a connection electrode on a first substrate; and a luminescent element on a second substrate opposite to the first substrate, the luminescent element being connected to the connection electrode, the luminescent element having a contact part at least partially surrounded by a separator, wherein a first electrode, a second electrode and an organic common layer between the first electrode and the second electrode are located in the contact part.

Abstract: A tandem organic electroluminescent element for use in an organic electroluminescent display is provided. The organic electroluminescent element comprises an anode, a cathode, a first organic electroluminescent unit, a second organic electroluminescent unit, and a connecting layer. Both the first organic electroluminescent unit and the second organic electroluminescent unit are disposed between the anode and the cathode. The connecting layer is between the first and second units, and comprises a bipolar organic compound and a conductive dopant.

Abstract: A fabrication method of an indium tin oxide (ITO) anode containing point nickel for an organic light emitting diode (OLED) to selectively light includes various processes of preparing an ITO substrate with an anode having plural point grooves, of forming a nickel film on the anode, and of grinding the nickel film to leave the point grooves fitted with nickel. Therefore, the nickel spots of the ITO anode are lit up earlier than the pure ITO anode when the OLED is turn on. Because the nickel spots have a lower resistance, current can aggregate in these spots collectively, reducing demerit of cross-talk happening often in a conventional passive OLED panel circuit. The structure of the OLED includes an ITO substrate with an anode provided point grooves deposited with nickel, a hole transport layer on the anode, and an electron transport layer on the hole transport layer.

Abstract: A fabrication method of an indium tin oxide (ITO) anode containing nickel for improving injection efficiency of an organic light emitting diode (OLED) includes various processes of preparing an ITO substrate with an anode, of preparing a target source of ITO containing nickel, and of mingling nickel on the anode of the ITO substrate by sputtering. The structure of the ITO anode containing nickel for an OLED includes a substrate with an anode mingled with nickel, a hole transport layer and an electron transport layer. Such an ITO anode is to have a higher work function that can lessen a great potential barrier between the ITO anode and a hole transport layer. So the threshold voltage and the turn-on voltage of OLED can be reduced to advance hole injection efficiency.

Abstract: Systems for displaying images. A representative system incorporates an electroluminescent diode that includes a composite electrode structure. Particularly, the composite electrode structure comprises a layer containing alkali or alkaline earth compounds, and a metal oxide layer or semiconductor layer. Wherein, the alkali or alkaline earth compound has carbonyl group or fluorine.

Abstract: A process for producing light-emitting devices, particularly OLEDs, which saves material and produces a homogeneous light-emitting layer, is provided. The process involves applying layers to a substrate so as to produce a layer assembly, including the steps of 1) applying an electrode, 2) producing a surface with depressions, and 3) applying organic light-emitting material that is introduced into the depressions.

Abstract: An organic light emitting diode (OLED) display includes a substrate, a first electrode disposed on the substrate, a second electrode facing the first electrode, an emission layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the first electrode and the emission layer. The hole transport layer includes a first hole transport layer comprised of a first material, a second hole transport layer comprised of a combination of the first material and a second material, and a third hole transport layer comprised of the first material. The second material has a different band gap energy from that of the first material, and the second hole transport layer and the third hole transport layer are alternately and repeatedly disposed.

Abstract: An OLED includes a wide gap inert host material doped with two dopants. One of the dopants is an emissive phosphorescent material that can transport either electrons or holes. The other dopant is a charge carrying material that can transport whichever of the electrons and holes that is not transported by the phosphorescent dopant. The materials are selected so that the lowest triplet energy level of the host material and the lowest triplet energy level of the charge carrying dopant material are each at a higher energy level than the lowest triplet state energy level of the phosphorescent dopant material. The device is capable, in particular, of efficiently emitting light in the blue region of the visible spectrum.

Abstract: An organic electroluminescent device includes an anode, an organic electroluminescent material layer, and a multi-layer transparent cathode on a substrate in sequence. The multi-layer transparent cathode has a thin metal layer in the bottom of the transparent cathode, a doped buffer layer on the thin metal layer, and a transparent electrode on the doped buffer layer.

Abstract: A three-dimensional memory device having polycrystalline silicon diode isolation elements for phase change memory cells and method for fabricating the same. The memory device includes a plurality of stacked memory cells to form a three-dimensional memory array. The polycrystalline silicon diode element selects the phase change memory cell. The memory device is fabricated by forming a plurality of phase change memory cells and diode isolation elements on a base layer. Additional layers of memory cells and isolation elements are formed over the initial layer.

Abstract: Provided is an organic EL element including: a first electrode 13; a protection layer 15 that is formed on the first electrode 13 and has an opening portion through which the first electrode 13 is exposed; an insulation layer 17 that is formed on the protection layer 15; an organic layer 19 that is formed over the insulation layer 17 and the first electrode 13 exposed through the opening portion, and includes an emission layer; and a second electrode 21 formed on the organic layer 19, wherein a film thickness of the protection layer 15 is less than that of the organic layer 19.

Abstract: Described herein is a transparent electrode comprising at least one optically transparent electrically conductive layer; and at least one optically transparent intermediate layer, wherein said optically transparent conductive layer is in contact with said optically intermediate layer, and wherein said optically transparent conductive layer and said optically transparent intermediate layer together transmit at least 50 percent of incident light having a wavelength in a range between about 200 and about 1200 nanometers, said optically transparent conductive layer having a bulk conductivity at least 100 Siemens per centimeter (S/cm), said optically transparent intermediate layer being comprised of a material having a bulk electrical conductivity at room temperature less than 10?12 Siemens per centimeter and a band gap of 3.5 eV. Described herein are also methods for forming a transparent electrode, and transparent electronic devices comprising at least one transparent electrode.

Abstract: An organic light emitting device, and method of fabricating the same, in which a data line, a power line, or a data line and a power line of a unit pixel region are formed in a trench formed in an insulating layer. A first pixel electrode overlaps the trench.

Abstract: Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.

Abstract: An organic electroluminescent device including: at least two or more emitting layers (4), (8) between an anode (10) and a cathode (2), and an intermediate electrode layer (6) being interposed between emitting layers (4), (8), the intermediate electrode layer (6) being a single layer or a multilayer structure of a plurality of layers, at least one of the layers (6) including a semiconductive material having a resistivity of 0.001 to 10,000 ?·cm. The device and a display using the same have a high efficiency and long life time.

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.

Abstract: There is provided a bilayer anode having two layers. The first layer includes conductive nanoparticles and the second layer includes a semiconductive material having a work function greater than 4.7 eV.

Abstract: An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during diode operation, and the array configured for passing coolant fluid for transfer of heat to the fluid. LED packages adjustable relative to a mounting grid, are also provided.

Abstract: A display device comprises an anode, a cathode, and a luminescent region disposed between the anode and the cathode, wherein the anode comprises a metal-organic mixed layer operatively combined with an electron-accepting material. An anode may comprise a mixture of a metal-organic mixed layer and an electron-accepting material within a single layer of the anode. Alternatively, the anode may have a multilayer configuration comprising a metal-organic mixed layer and a buffer layer adjacent the metal-organic mixed layer, wherein the buffer layer comprises an electron-accepting material and optionally a hole transport material.

Abstract: A stacked OLED includes a first electrode, a second electrode, a plurality of luminescent regions disposed between the first and second electrodes, and an intermediate electrode disposed between successive luminescent regions. At least one intermediate electrode comprise a metal-organic mixed layer disposed between a first charge injecting layer and a second charge injecting layer.