Abstract: Aluminum nitride crystal particles, aluminum nitride powders containing the same, production processes for both of them, an organic polymer composition comprising the aluminum nitride crystal particles and a sintered body. Each of the aluminum nitride crystal particles has a flat octahedral shape in a direction where hexagonal faces are opposed to each other, which is composed of two opposed hexagonal faces and 6 rectangular faces, in which the average distance “D” between two opposed corners of each of the hexagonal faces is 3 to 110 ?m, the length “L” of the short side of each of the rectangular faces is 2 to 45 ?m, and L/D is 0.05 to 0.8; each of the hexagonal faces and each of the rectangular faces cross each other to form a curve without forming a single ridge; and the true destiny is 3.20 to 3.26 g/cm3.

Abstract: A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1?y) AlSiN3:X1 II:(CabSraLi1?a?b) AISi (N1?cFc)3:X2 III: Z5??Al4?2?Si8+2?N18: X3 IV: (Zi?dLid)5??Al4?2?Si8+2?(N1?XFX)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.

Abstract: The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10?4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.

Abstract: Provided is a manufacturing method of a recycled plate for a sliding nozzle, which is capable of repairing damage of a plate used for a sliding nozzle to extend an endurance period and widens a range of the used plate as a target for recycling. The manufacturing method of the recycled plate performs, on a plate used for the sliding nozzle, recycling processing including impregnating a matrix of the plate that is formed by a refractory brick with liquid containing at least one of tar and pitch, heating the plate impregnated with the liquid to remove a volatile component, grinding a surface of the plate after having been impregnated with the liquid and heated, and bonding a plate material to one surface of the plate after having been grinded.

Abstract: The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10?4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.

Abstract: A new Enhanced High Pressure Sintering (EHPS) method for making three-dimensional fully dense nanostructures and nano-heterostructures formed from nanoparticle powders, and three-dimensional fully dense nanostructures and nano-heterostructures formed using that method. A nanoparticle powder is placed into a reaction chamber and is treated at an elevated temperature under a gas flow to produce a cleaned powder. The cleaned powder is formed into a low density green compact which is then sintered at a temperature below conventional sintering temperatures to produce a fully dense bulk material having a retained nanostructure or nano-heterostructure corresponding to the nanostructure of the constituent nanoparticles. All steps are performed without exposing the nanoparticle powder to the ambient.

Abstract: The present invention relates to a method of manufacturing a porous pre-sintered granule for a sintered reaction-bonded silicon nitride, to which a pressure forming technology can be applied to obtain a porous sintered reaction-bonded silicon nitride having high porosity and having a structure in which macropores and micropores coexist with each other, and to a porous pre-sintered granule manufactured by the method. The method includes the steps of: granulating a raw material comprising silicon and sintering additives including yttrium, aluminum and at least one alkali earth metal compound; and pre-sintering the granulated raw material at a temperature of 1300˜1375° C. under an inert atmosphere. According to the present invention, a porous pre-sintered granule for porous sintered reaction-bonded silicon nitride, which can increase the air permeability and trapping efficiency by controlling the size of a pore channel such that macropores and micropores coexist, can be manufactured.

Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 ?m or more and 700 ?m or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 ?m or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Abstract: A silicon nitride material is disclosed which has properties beneficial for efficient operation of a corona discharge igniter system in an internal combustion gas engine.

Abstract: This invention relates to a ceramic and a cermet each having a second phase for improving toughness via phase separation from a complete solid-solution phase and to a method of preparing them. The ceramic and the cermet may have the second phase phase-separated from the complete solid-solution phase, thereby easily achieving a great improvement in toughness and exhibiting other good properties including high strength, consequently enabling the manufacture of high-strength and high-toughness cutting tools, instead of conventional WC—Co hard materials.

Abstract: A method for preparing ceramic powders in the presence of a carbon powder including a step which consists in homogenizing a mixture of particles capable of resulting in a ceramic by heat treatment. Said method can be carried out in the presence of an accelerated solvent and provides, at reduced energy consumption, carbon-coated ceramic powders and then ceramics.

Abstract: A method for pressureless sintering of B4C without sintering agents which reduces sintering time without sacrificing relative density, and avoids decomposition of B4C and loss of relative density.

Abstract: Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

Abstract: The invention describes a sputtering target comprising a ceramic body having tin oxide as a major constituent and between 0.5 and 15 wt % of at least two other oxides, one of which being antimony oxide, the target having a density of at least 90%, and preferably at least 95%, of the theoretical density (TD) and an electrical resistivity of less than 50 Ohm·cm, and the target having a planar or rotary configuration with a sputtering area of at least 10 cm2, and preferably at least 20 cm2. Also described is a process for manufacturing this sputtering target according comprising the steps of: —providing for a slurry comprising tin oxide and said at least two other oxides, —shaping of a green body from said slurry, and drying said green body, —firing of said green body at a temperature between 1050 and 1250° C., thereby obtaining a pre-shaped target, and —grinding of said pre-shaped target to its final dimensions.

Abstract: Starting from, as the initial composite, an LAS component in accordance with the composition LixAlySizOw, where x varies between 0.8 and 1.2, y varies between 0.8 and 1.2, z varies between 0.8 and 2, and w varies between 4 and 6, the LAS component is subsequently mixed with SiC nanoparticles, to obtain a stable, homogeneous suspension. Thereafter, the resulting suspension is dried. Subsequently, the material obtained is shaped and, finally, the material obtained in the preceding step is sintered.

Abstract: Methods of preparing polycrystalline aluminum nitride materials that have high density, high purity, and favorable surface morphology are disclosed. The methods generally comprises pressing aluminum nitride powders to form a slug, sintering the slug to form a sintered, polycrystalline aluminum nitride boule, and optionally shaping the boule and/or polishing at least a portion of the boule to provide a finished substrate. The sintered, polycrystalline aluminum nitride materials beneficially are prepared without the use of any sintering aid or binder, and the formed materials exhibit excellent density, AlN purity, and surface morphology.

Abstract: An outer ring, an inner ring and a ball that are a rolling contact member formed of sintered ? sialon inexpensive and capable of reliably ensuring sufficient durability, is constituted of a sintered body containing ? sialon as a main component and having a remainder formed of an impurity, and the outer ring, the inner ring and the ball have raceway/rolling contact surfaces, i.e., an outer ring raceway surface, an inner ring raceway surface and a ball rolling contact surface included in a portion having an outer ring high density layer, an inner ring high density layer and a ball high density layer higher in density than an inner portion.

Abstract: Disclosed is a method of producing a plate brick, which comprises: adding an organic binder to a refractory raw material mixture containing aluminum and/or an aluminum alloy; kneading them; forming the kneaded mixture into a shaped body; and burning the shaped body in a nitrogen gas atmosphere at a temperature of 1000 to 1400° C., wherein: when a temperature of a furnace atmosphere is 300° C. or more, the atmosphere is set to a nitrogen gas atmosphere; and when the temperature of the furnace atmosphere is 1000° C. or more, an oxygen gas concentration in the atmosphere is maintained at 100 volume ppm or less, and a sum of a carbon monoxide gas concentration and a carbon dioxide gas concentration is maintained at 1.0 volume % or less.

Abstract: A hydrogen permeable membrane is disclosed. The membrane is prepared by forming a mixture of metal oxide powder and ceramic oxide powder and a pore former into an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.

Abstract: The present invention uses a post-sinter-HIP anneal to increase the total transmittance of ceramic discharge vessels comprised of a submicron-grained alumina doped with MgO. After the anneal, the submicron-grained alumina discharge vessels have high values of both total and in-line transmittance, and are thus suitable for use in focused-beam, short-arc lamps. In particular, the total transmittance of the discharge vessel is increased to greater than 92% in the wavelength range from about 400 nm to about 700 nm.

Abstract: The present method uses a methane-containing nitrogen gas sintering atmosphere to sinter aluminum nitride (AlN) to a high transmittance. The methane gas replaces the solid carbon charge material used in prior art sintering methods as the source of gaseous carbon. The amount of carbon in the methane-containing nitrogen gas is easily controlled by varying the partial pressure of methane in the nitrogen gas. In addition, the methane flow is stopped prior to the end of the sintering cycle to prevent darkening of the sintered part.

Abstract: A dielectric green sheet containing a dielectric ceramic powder, conductor green sheets containing a metal powder, and firing-assisting green sheets containing an inorganic oxide material powder are prepared, and the firing-assisting green sheet, the conductor green sheet, the dielectric green sheet, another conductor green sheet, and another firing-assisting green sheets are stacked in that order to prepare a laminate. The laminate is then fired. During firing, the bonding strength of the interfaces between the conductor green sheets and the firing-assisting green sheets is decreased and the oxygen partial pressure of the firing atmosphere is changed at least once so that the capacitor portion is separated from the firing-assisting green sheets. In this manner, a method for manufacturing thin film capacitor by which a high-reliability thin film capacitor can be produced at high efficiency and low cost without adversely affecting the characteristics of the thin film capacitor.

Abstract: Method of fabricating RBSN parts in which the processing of compacts of silicon to produce reaction bonded silicon nitride products is accomplished in a continuous style furnace. The furnace of the preferred embodiment is arranged as a contiguous series of furnace sections or zones configured to have a part conveyor traveling slowly from one end to another to sequentially expose the parts to each zone. Each zone may for example be one foot long. The conveyor then travels at a rate of one foot per hour. Parts to be nitrided are settered onto kiln furniture plates while providing a minimum one-quarter inch clearance to all other parts. The parts on the plates are conveyed through the sequential temperature zones in a continuous fashion while under ambient pressure flowing nitrogen gas. The parts travel through the contiguous temperature zones at a constant rate of conveyance allowing the nitriding reaction to progress to completion.

Abstract: A method of sintering a ZrB2—SiC composite body at ambient pressures, including blending a first predetermined amount of ZrB2 powder with a second predetermined amount of SiC powder, wherein both powders are characterized by the presence of surface oxide impurities. Next the blended powders are mixed to yield a substantially homogeneous powder mixture and a portion of the substantially homogeneous powder mixture is formed into a green body. The body is fired to a first temperature, wherein substantially all surface oxide impurities are reduced and/or volatilized to substantially eliminate oxides from the green body, and the body is heated to a second temperature and sintered to yield a composite body of at least about 99 percent theoretical density and characterized by SiC whisker-like inclusions distributed substantially evenly in a ZrB2 matrix.

Abstract: A silicon nitride sintered material includes a silicon nitride crystal and a grain boundary layer that contains at least two of a first metal silicide (a metal silicide having, as a first metal element, at least one selected from the group consisting of Fe, Cr, Mn and Cu), a second metal silicide (a metal silicide having, as a second metal element, at least one of W or Mo) and a third metal silicide (a metal silicide having a plurality of metal elements including the first metal element and the second metal element), wherein the grain boundary layer has neighboring phase where at least two of the first through third metal silicides exist in contact with each other.

Abstract: A thermal method of making a hydrogen permeable composition is disclosed. A mixture of metal oxide powder and ceramic oxide powder and optionally a pore former is formed and pressed to form an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.

Abstract: An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.

Abstract: High-density components and products as well as processes for making high-density components and products are disclosed. One exemplary component, among others, includes a boron carbide component comprised of a homogeneous boron carbide powder. The component has at least a 93% relative density (RD) and a Vickers hardness of at least 2000 kg/mm2.

Abstract: The present method uses a methane-containing nitrogen gas sintering atmosphere to sinter aluminum nitride (AlN) to a high transmittance. The methane gas replaces the solid carbon charge material used in prior art sintering methods as the source of gaseous carbon. The amount of carbon in the methane-containing nitrogen gas is easily controlled by varying the partial pressure of methane in the nitrogen gas. In addition, the methane flow is stopped prior to the end of the sintering cycle to prevent darkening of the sintered part.

Abstract: The invention relates to a method for manufacturing a composite of a porous metal oxide infrastructure and a glass infiltrated in the pores of the infrastructure, wherein the method comprises at least the following steps: providing a glass which is suitable for infiltration and compatible with the metal oxide infrastructure; heating the glass in a nitrogen rich environment; and infiltrating the metal oxide infrastructure with the glass. The invention also relates to a method for avoiding or reducing stress corrosion in a glass infiltrated metal oxide infrastructure, comprising heating a glass composition under a nitrogen gas atmosphere before infiltrating the metal oxide infrastructure. The invention further relates to a glass infiltrated metaloxide infrastructure obtainable by any of these methods.

Abstract: An object of the present invention is to lower the sintering temperature required for a sintered body of yttrium-aluminum garnet, to improve the corrosion resistance of the sintered body and to prevent the reduction of the transmittance thereof. A sintered body of yttrium-aluminum garnet is produced from a source compound for yttrium and a source compound for aluminum using aluminum nitride as a sintering aid. It maybe considered that aluminum nitride reacts with alumina and yttria to generate liquid phase and to reduce the sintering temperature during the sintering process.

Abstract: A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged, characterized in that the firing step has a temperature raising step for raising a temperature to a firing temperature, and hydrogen is continued to be introduced from a point in time of the temperature raising step. According to the method, it is possible to provide a method of producing a multilayer ceramic electronic device, such as a multilayer ceramic capacitor, wherein shape anisotropy and other structural defaults are hard to occur and electric characteristics are improved while suppressing deterioration thereof even if dielectric layers becomes thinner and stacked more.

Abstract: A method for manufacturing a silicon carbide composite body and includes the steps of forming a slurry including silicon carbide and a carbonaceous precursor, adding to the slurry composite granules containing a carbonaceous binder and carbon black, drying the slurry, shaping the dried slurry and sintering the dried and shaped slurry at a temperature of at least 2000° C. to form a body containing silicon carbide and non-graphitic carbon. The invention further relates to the composite body formed and the mixture prior to sintering.

Abstract: The present invention provides a sintered silicon carbide jig production method capable of simply increasing the purity of a sintered silicon carbide jig. A method of producing a sintered silicon carbide jig comprising a process in which a second sintered body is heated at a temperature rising rate of 3 to 5° C./min up to heating treatment temperature selected in the range of 2200 to 2300° C. under an argon atmosphere, kept at the same heating treatment temperature for 3 hours, and cooled at a temperature lowering rate of 2 to 3° C./min down to 1000° C.

Abstract: A method for sealing a silicon nitride filter having a generally columnar outer shape and a plurality of through-holes mutually parallel to one another, extending between the opposing end surfaces, which comprises selectively packing a composition containing metal silicon particles in the vicinity of the opening of the through-holes to be sealed on each end surface, subjecting the silicon nitride filter to a heat treatment in a nitrogen atmosphere so that the metal silicon particles contained in the composition are nitrided and formed into silicon nitride for sealing.

Abstract: This invention provides a black low thermal expansion high specific rigidity ceramic sintered body having a black tone, manifesting very small thermal expansion at room temperature and abounding in rigidity and specific rigidity, and a method for the production thereof. The black low thermal expansion high specific rigidity ceramic sintered body is characterized by having a chemical composition comprising 8.0–17.2 mass % of MgO, 22.0–38.0 mass % of Al2O3, 49.5–65.0 mass % of SiO2, a total of 0.1–2 mass % of one or more transition elements as reduced to oxides, and 0–2.5 mass % of Li2O, and having the mass ratios satisfy the relationships of (SiO2?8×Li2O)/MgO?3.0 and (SiO2?8×Li2O)/Al2O3?1.2. The method for the production of a black low thermal expansion high specific rigidity ceramic sintered body of this invention is characterized by forming the sintered body in an atmosphere of a non-oxidizing gas at a temperature in the range of 1200–1500° C.

Abstract: This invention provides a stacked ceramic body that prevents reaction between components of dielectric layers and components of electrode layers of an unsintered stacked body during sintering and in which both components do not easily form a liquid phase, and a production method of such a stacked ceramic body. A print portion 13 is formed on a green sheet 1, 12 containing lead by use of an electrode paste consisting of copper oxide as its main component. A desired number of print sheets 10 are stacked to give an unsintered stacked body 15. Degreasing is conducted in an atmosphere to degrease organic components. The print portion 13 is subjected to reducing treatment in a reducing atmosphere containing hydrogen and is converted to a print portion 13 containing copper as its main component. The unsintered stacked body 15 is sintered in a reducing atmosphere.

Abstract: The dielectric composition contains a mixture of a ceramic composition containing BaaREbTicO3, wherein RE represents a rare earth element, with 0.05?a?0.25, 0.525?b?0.70, 0.85?c?1.0, and 2a+3b+4c=6, and free from lead and bismuth, a glass composition, and a metal oxide. The glass composition preferably contains ZnO or MgO, SiO2, and at least 10% by weight of Li2O or TiO2. Preferably, the alkaline earth metal oxide is MgO. By preference, the glass composition essentially consists of 50–80% weight of SiO2, 5–25% weight of MgO, and optionally another alkaline earth metal oxide, and 10–25% by weight of Li2O, and is substantially free from boron. The dielectric composition can be sintered in the presence of Cu electrodes at a temperature below the melting point of Cu so as to manufacture an electronic device such as a ceramic multilayer element. After sintering, the dielectric composition has a relative dielectric constant of at least 55.

Abstract: A method for bonding an electrically conductive silicon carbide structure to an electrically conductive siliconized silicon carbide structure by temporarily securing the siliconized silicon carbide structure to the silicon carbide structure; placing the silicon carbide structure with secured siliconized silicon carbide structure into an induction heating furnace having an induction coil which heats electrically conductive material in the furnace when sufficient electrical power at a frequency of from about 300 to about 1000 KC is passed through the coil; and causing sufficient electrical power at a frequency of from about 300 to about 1000 KC to be passed through the coil to raise the temperature of the siliconized silicon carbide structure and silicon carbide structure to a temperature above about 1500° C.

Abstract: A nuclear fuel sintered body is produced from a powder which contains at least one fissile heavy metal oxide. During the further treatment of the powder over the course of the process preceding the sintering operation, a dopant that contains at least 100 ppm of an iron oxide compound is added to the powder. The powder is a UO2-containing powder obtained from a dry-chemical conversion process, and if appropriate, a powder which contains further fissile heavy metal oxide (U3O8, PuO2, inter alia). As a result, the sintered body is provided with high plasticity combined, at the same time, with a large grain size. This advantageously reduces an interaction between the nuclear fuel sintered body and a fuel rod cladding tube during an operation of the reactor.

Abstract: A ceramic material suitable for use in production of paving tiles, construction tiles, flooring in offices, flooring in machinery plants and so forth is obtained by a method comprising steps of mixing defatted bran derived from rice bran with a thermosetting resin before kneading, subjecting a kneaded mixture thus obtained to a primary firing in an inert gas at a temperature in a range of 700 to 1000° C., pulverizing the kneaded mixture after the primary firing into carbonized powders, kneading the carbonized powders with which ceramic powders, a solvent, and a binder as desired are mixed into a plastic workpiece (kneaded mass), pressure-forming the plastic workpiece at pressure in a range of 10 to 100 MPa, and subjecting a formed plastic workpiece thus obtained again to firing in an inert gas atmosphere at a temperature in a range of 100 to 1400° C.

Abstract: The invention relates to a method for producing high-density, translucent, scintillator ceramics by means of a pressure-less sintering carried out at an elevated temperature. According to the method, particles of a MOS composition are prepared using a specific wet milling method whereby being reduced, in particular, to a particle size of less than 10 &mgr;m. The particles are compacted to form compacted bodies with green densities of up to 50% and higher. The sintering is carried out under specific sintering parameters.

Abstract: A glass ceramic sintered body containing gahnite and cordierite as crystal phases, having a thermal expansion coefficient at 40 to 400° C. of not larger than 5×10−6/° C., a dielectric constant of not larger than 7 and a Young's modulus of not larger than 150 GPa. A wiring board having an insulating substrate made of the glass ceramic sintered body features very high reliability in the primary mounting and in the secondary mounting.

Abstract: The volume resistivity of a body consisting essentially of aluminum nitride is reduced by exposing the body to a soak temperature of at least about 1000° C. in an atmosphere deficient in nitrogen, such as an atmosphere consisting essentially of argon. The body can be, for example, a green body of aluminum nitride powder of a densified, or sintered body, such as a polycrystalline body. An electrostatic chuck has an electrode within a chuck body. A first portion of the chuck body, at a first side of the electrode, has a volume resistivity less than about 1×1013 ohm·cm at about 23° C. A second portion of the body, at a second side of the electrode, has a volume resistivity within one order of magnitude that of the first portion.

Abstract: A method and an apparatus for sintering a compact of particulate material for a ceramic or of particles of a metal, or a ceramic precursor film, wherein the sintering is performed by heating and burning the compact or the ceramic precursor film while applying centrifugal force to the compact or the ceramic precursor film.

Abstract: A method for advantageously producing sintered eutectic ceramics having a homogenous and dense structure, in particular, a eutectic containing a rare earth aluminate compound. The method allows eutectic powder of alumina and a rare earth aluminate compound to stand at a temperature of 1300-1700° C. for 1-120 minutes under vacuum or in an non-oxidative atmosphere under a pressure of 5-100 MPa using a spark plasma sintering apparatus, thereby causing crystal growth to occur to obtain a rare earth aluminate eutectic structure crystal.

Abstract: A preform is made by bundling up fibers, and then, immersed into a ceramic slurry to form a fiber compact. Then, a tansformable ceramic material is infiltrated into voids of the fiber compact to fabricate a ceramic based fiber-reinforced composite material.

Abstract: A process for forming a porous silicon nitride-silicon carbide body, the process comprising (a) forming a plasticizable batch mixture comprising (1) powdered silicon metal; (2) a silicon-containing source selected from the group consisting of silicon carbide, silicon nitride and mixtures thereof; (3) a water soluble crosslinking thermoset resin having a viscosity of about 50-300 centipoise; and, (4) a water soluble thermoplastic temporary binder; (b) shaping the plasticizable batch mixture to form a green body; (c) drying the green body; (d) firing the green body in nitrogen at a temperature of 1400° C. to 1600° C. for a time sufficient to obtain a silicon nitride-silicon carbide structure.

Abstract: A health support device having a lamination of a semiconductor film on a surface of a partially-reduced sintered material of titanium oxide. The semiconductor film is preferably a p-type semiconductor film of silicon or germanium. The partially-reduced sintered material is preferably represented by TiO2−x, where 0<×<0.5. The thickness of the semiconductor film is preferably from 1 nm to 500 nm. In production, a mixture of a titanium oxide powder and a binder is press-molded, and the molded material is sintered at a temperature of from 500° C. to 1100° C. in a vacuum, inert or reducing atmosphere. A p-type semiconductor film is formed on a surface of the resulting partially-reduced sintered material of titanium oxide.

Abstract: A method for manufacturing molded articles from a ceramic composite structure, in particular from a combination of tri-silicon tetranitride and a metal silicide, in which gas pressures up to 100 bar are used and the sintering additive content can be reduced to under 10 mass percent. This inert gas sintering pressure method makes possible larger molding free spaces in complicated geometrical structures of the molded articles, in contrast to the known methods. In addition, the electrical properties of this composite structure can be regulated by adjusting a defined nitrogen partial pressure.