Abstract: A method for modifying the resonance frequency of a micro-mechanical resonator, and resonators on which the method is practiced. A packaged resonator is trimmed by directing electromagnetic energy to the resonator through a transparent portion of the package. The removal of mass (by the energy) affects the resonance frequency of the resonator in a predictable manner. In some embodiments, the energy is sourced from a femtosecond laser. In some variations of the illustrative embodiment, the amount of mass to be removed is determined as a function of its location on the resonator. A mass-trimming map is developed that identifies a plurality of potential mass-trimming sites on the resonator. A site can be classified as a fine-tuning site or a coarse-tuning site as a function of the degree to which mass removal at those sites affects the resonance frequency. The sites can also be characterized as a function of their position relative to features of the resonator (e.g., nodal lines, etc.).

Abstract: An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.

Abstract: A method and sensor are provided for detecting the binding of a probe and a target biomolecule by measuring a difference in the shear stress on the surface of the sensor before and after hybridization of the target molecule to the probe, such as nucleic acids or proteins. The shear stress may be measured sensitively and conveniently as an electrical signal without additional fluorescent labeling and without use of expensive additional devices.

Abstract: An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AlN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).

Abstract: In a surface acoustic wave (SAW) device, such as a SAW resonator or a SAW filter, loss is minimized and steep characteristics are improved. IDT electrodes and a reflector are provided to a piezoelectric substrate cut out at a cut-angle which allows the substrate to excite a leaky surface acoustic wave (LSAW). The IDT electrodes have a given film thickness and a given pitch “p” of finger-electrodes. A phase velocity of the SAW is reduced to slower than a phase velocity “vb”of a slow shear wave propagating on the piezoelectric substrate, and a resonance frequency “f” satisfies a relation of 2×p?vb/f. This structure allows the use of a Rayleigh surface acoustic wave (RSAW) which does not produce propagation loss, and improving insertion-loss and steep characteristics from those of a conventional SAW device using the LSAW.

Abstract: A duplexer (1) comprises a chip (10) including a transmission filter (97) for passing a transmission signal therethrough and interrupting a reception signal and a reception filter (98) for passing a reception signal therethrough and interrupting a transmission signal. Each of the transmission filter (97) and the reception filter (98) includes thin-film piezoelectric resonators (16 and 17) each of which has a piezoelectric thin film that exhibits a piezoelectric property and two excitation electrodes that are disposed on both surfaces of the piezoelectric thin film and apply an excitation voltage to the piezoelectric thin film. All of the thin-film piezoelectric resonators (16 and 17) that the transmission filter (97) and the reception filter (98) include are disposed on a single base.

Abstract: A method for modifying the resonance frequency of a micro-mechanical resonator, and resonators on which the method is practiced. A packaged resonator is trimmed by directing electromagnetic energy to the resonator through a transparent portion of the package. The removal of mass (by the energy) affects the resonance frequency of the resonator in a predictable manner. In some embodiments, the energy is sourced from a femtosecond laser. In some variations of the illustrative embodiment, the amount of mass to be removed is determined as a function of its location on the resonator. A mass-trimming map is developed that identifies a plurality of potential mass-trimming sites on the resonator. A site can be classified as a fine-tuning site or a coarse-tuning site as a function of the degree to which mass removal at those sites affects the resonance frequency. The sites can also be characterized as a function of their position relative to features of the resonator (e.g., nodal lines, etc.).

Abstract: A noise suppression method of a wave filter used to eliminate standing wave signal interferences in the acoustic wave filter consisted by a plurality of film bulk acoustic resonators (FBARs). The method is to provide a plurality of scatterers in the structured consisted by the FBARs, thereby creating an band-gap structure due to the material characteristics difference, which consequently generates a destructive interfering effect to the transverse higher harmonics vibration within a specific operating frequency range, and ultimately decreases or even eliminates any parasitic effects. Therefore, within the operation frequency range of this band-gap structure, abnormal signals created by any transverse wave modes cannot exist. In addition, an acoustic shield can be provided by phononic crystal structures between different FBARs, thus acoustic shielding any mutual interference within the operation frequency range.

Abstract: A piezoelectric resonator element of crystallographic point group 32, which can be operated as a thickness shear resonator contacting a carrier medium includes a singly rorated Y-cut (S1,S2) that is essentially rotated through an angle ?about the crystallographic x-axis, which differs from crystal cuts that are temperature-compensated in air or vacuum, wherein the cut has a negative temperatue coeffcient of the resonace frequency f(T) in a predetermined temperature range, preferably between 10° C. and 40° C., when there is no contact with the carrier medium, while the value of the linear temperature coeffcient a of resonance frequency in the same temperature range is less than 1 ppm/° C., preferably less than 0.5 ppm/° C. when the resonator is inb contact with the carrier medium. The resonator element (1) can additionally be provided with at least one layer sensitive to the parameter to be measured.

Abstract: A surface acoustic wave device includes, on a piezoelectric substrate, at least one surface acoustic wave filter and at least one surface acoustic wave resonator that is connected in series and/or parallel to the surface acoustic wave filter. A film having a positive frequency-temperature characteristic is disposed so as to cover at least one of the at least one surface acoustic wave resonator, except for a region in which the surface acoustic wave filter is provided.

Abstract: A low loss, small scale piezoelectric transformer, suited for a cold cathode tube load, and having a high effective coupling factor, is provided using a piezoelectric plate having a single polarization direction. Controlling the dimensions of the third electrode portion 15a constituting the high impedance portion makes it possible easily to adjust the capacitance of the electrostatic capacitor formed between the first electrode portion 12 and the third electrode portion in accordance with the load. Also, the second electrode portion 13 and the fourth electrode portion 15b constituting the low impedance portion are substantially equal in area and the third electrode portion and the fourth electrode portion are formed in one piece, so that energy propagation efficiency can be increased.

Abstract: Disclosed herein is a high efficiency piezoelectric single phase uni-polar supersonic actuator which is composed of an upper back disc, a PZT plate an electrode, a lower back disc, a pivotal bolt and a fixing nut. The PZT plate and its electrode are interposed between the upper and the lower back discs, and the whole actuator unit is supported and fixed with the pivotal bolt and the nut combination by passing the bolt coaxially through the center of the actuator unit. The parametric output variation of the actuator is carried out by an asymmetrical structure due to varying number, size and location of notches, or a variety of notch and screw combination made on the upper back disc such that after the electrode is energized, the actuator produces an unbalanced periodic axial or transverse thrust force to drive a rotor installed on the pivotal bolt above the upper back disc. The maximum rotating speed of the rotor may reach up to above 3000 rpm.

Abstract: The present invention provides a method for making high-frequency piezoelectric resonators so that constants of the resonator can be measured precisely. A cavity is formed at a central section of an AT-cut crystal substrate. Two grooves are formed at predetermined distances from the left and right of the cavity, and two more grooves are formed at predetermined distances outward from these two grooves. Two more grooves perpendicular to the first set of grooves are formed. A pair of main electrodes and a pair of secondary electrodes shorted to ground and surrounding the main electrodes are disposed at roughly the center of the crystal substrate. One main electrode and one secondary electrode are used as inputs and the other main electrode and secondary electrode are used as outputs, with these two terminal pairs being used to measure and adjust a frequency.

Abstract: A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.

Abstract: A film acoustic wave device having similar properties are obtained by changing at least one of the length and/or the width of upper electrodes; the distance between the upper electrodes; the length and/or the width of connecting patterns; the areas of bonding pads; and the pattern shape for the film acoustic wave device such as the area of capacitor electrodes electrically connected to the bonding pads. Property variations of the film acoustic wave devices caused from the positioning at a wafer is compensated for.

Abstract: An ultrasonic vibration tool is made of a block of substantially rectangular parallelepiped form, and has its one end face formed as an output end face, and has its other end face opposite the output end face formed as an input end face. An ultrasonic oscillator is connected to the input end face for transmitting a longitudinal standing wave to the output end face. Peripheries of the input and output end faces of the block constitute mass portions. Between the mass portions are formed slits at a pitch less than a half of an oscillation wavelength, whereby a plurality of elastic portions are obtained. The mass portion on the input end face side has a protrusion having a height equal to or less than a quarter of the oscillation wavelength, thereby obtaining a mass distribution. Hence, a uniform amplitude distribution is achieved in the output end face.

Abstract: A method of forming a tuned resonator structure by first forming a base resonator structure that comprises a trimming layer on a resonator structure, wherein the trimming layer comprises at least one first low loss acoustic layer on the resonator structure, and at least one second low loss acoustic layer on the first low loss acoustic layer. Then, a “tuned” resonator structure is formed by measuring the frequency of the base resonator structure and removing the number of each of the two different low loss acoustic layers determined to be necessary to achieve the targeted frequency of the base resonator structure, thus improving the frequency control, reliability and performance of the resonating structure.

Abstract: A micromechanical switch comprises a substrate, at least one pair of support members fixed to the substrate, at least one pair of beam members placed in proximity and parallel to each other above the substrate, and connected to one of the support members, respectively, each of the beam members having a moving portion which is movable with a gap with respect to the substrate, and a contact portion provided on the moving portion, and a driving electrode placed on the substrate between the pair of beam members to attract the moving portions of the beam members in a direction parallel to the substrate with electrostatic force so that the contact portions of the beam members which are opposed to each other are short-circuited.

Abstract: An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AIN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract: A piezoelectric vibrator has a container having a hermetically sealed cavity and a transparent portion for transmitting therethough a laser beam into the hermetically sealed cavity. A piezoelectric vibrator piece is disposed in the hermetically sealed cavity. A gettering substance is disposed directly on a surface of the piezoelectric vibrator piece so that when a laser beam is irradiated on the metal film through the transparent portion of the container the metal film is vaporized to absorb any gases contained in the hermetically sealed cavity of the container to thereby increase a degree of vacuum within the hermetically sealed cavity.

Abstract: A method for tuning an electro-mechanical device such as a MEMS device is disclosed. The method comprises operating a MEMS device in a depressurized system and using FIB micromachining to remove a portion of the MEMS device. Additionally, a method for tuning a plurality of MEMS devices by depositing an active layer and then removing a portion of the active layer using FIB micromachining. Also, a method for tuning a MEMS device and vacuum packaging the MEMS device in situ are provided.

Abstract: Disclosed are a film bulk acoustic resonator, a duplexer filter having the same, and a semiconductor package thereof. The film bulk acoustic resonator comprising: a semiconductor substrate; a lower electrode more than two layers formed at an upper surface of the semiconductor substrate; a piezoelectric layer deposited on an upper surface of the lower electrode with a certain thickness; and an upper electrode more than two layers formed at an upper surface of the piezoelectric layer, has an excellent bonding characteristic. The duplexer filter can microminiaturize a size thereof by integrating a film bulk acoustic filter formed by connecting the plurality of film bulk acoustic resonators serially and in parallel and peripheral passive elements of the film bulk acoustic filter into one semiconductor chip. Also, the semiconductor package is suitable for the duplexer filter.

Abstract: The invention relates to bulk acoustic wave filters including at least two bulk acoustic wave resonators. Each of these resonators includes at least one first electrode, a piezoelectric layer, and a second electrode. At least two of the bulk acoustic wave resonators have effective resonator surfaces which differ in their surface form and/or surface content. The inventive design of the bulk acoustic wave resonators enables optimal suppression of interference modes without influencing the impedance level of the filter.

Abstract: A piezoelectric resonator is disclosed. In one embodiment the piezoelectric resonator includes a resonating member having a bi-directionally adjustable resonance frequency, the resonating member including a semiconductor material of a semiconductor-on-insulator wafer, the semiconductor-on-insulator wafer including an oxide layer adjacent to the semiconductor material and a handle layer adjacent to the oxide layer, the oxide layer disposed between the handle layer and the semiconductor material, and electrode, and a piezoelectric material disposed between the semiconductor material and the electrode, and a capacitor created by the semiconductor material and the handle layer separated by an air gap formed out of the oxide layer, wherein the capacitor is configured to receive a direct current voltage that adjusts the resonance frequency of the resonating member.

Abstract: A piezoelectric vibrator comprising: a thin rectangular piezoelectric plate formed of a material having a Young's modulus having to short edges surfaces and two long edge surfaces and two long planar face surfaces which plate has transverse resonant vibration modes parallel to its short edges and longitudinal resonant vibration parallel to its long edges and is formed with at least one cavity; and least one electrode on each of the planar surfaces that is electrifiabie to excite at least one vibration mode of the plate, wherein the at least one cavity is not filled with a material having a Young's modulus substantially equal to the Young's modulus of the material from which the place is formed, such that the presence of the at least one cavity shifts a resonant frequency of at least one vibration mode of the plate with respect to the resonant frequency that characterizes the at least one vibration mode in the absence of the at least one cavity.

Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by reducing mass from a top electrode layer. For a substrate having multiple resonators, mass is reduced from only selected resonator to provide resonators having different resonance frequencies on the same substrate.

Abstract: A piezoelectric filter includes a plurality of piezoelectric resonator portions each having a substrate, an SiO2 layer, a piezoelectric thin-film, a lower electrode, and an upper electrode. The plurality of piezoelectric resonator portions include piezoelectric resonator portions having a relatively low frequency, and the lower electrodes of the piezoelectric resonator portions having a relatively low frequency have a thickness larger than that of lower electrodes of other piezoelectric resonator portions. A ladder-type piezoelectric filter, which is one of the communication devices, includes a plurality of parallel resonators and series resonators.

Abstract: A resonator device includes a piezoelectric resonator having a detuning layer sequence arranged on the piezoelectric resonator. The detuning layer sequence includes at least a first layer having a high acoustic impedance and a second layer having a low acoustic impedance.

Abstract: A method for producing a layer with a locally adapted or predefined layer thickness profile that can be used for to selectively set the natural frequencies of piezoelectric resonant circuits and/or the impedance of other circuit elements. A layer is applied to a substrate, then measured to determine a difference between the initial layer thickness and the predefined layer thickness profile. An ion beam is then used to etch (mill) the layer until it achieves the predefined layer thickness profile.

Abstract: A method and apparatus is presented. The method produces a Film Bulk Acoustic Resonator (FBAR) structure. A piezoelectric layer is provided and a series of manufacturing steps are performed to deposit a thin mass-load layer above the piezoelectric layer. Further, an electrode material is deposited on the thin mass-load layer after portions of the thin mass-load layer have been removed. The electrode material includes a non-mass-loaded region positioned above the piezoelectric layer and a mass-loaded region positioned above the mass-load layer.

Abstract: At least two electric elements (203) such as semiconductor chips or surface acoustic wave devices are mounted on wiring patterns (201), and the electric elements (203) are sealed with a thermosetting resin composition (204). An upper surface of the at least two electric elements (203) and an upper surface of the thermosetting resin composition (204) are abraded at the same time, thereby forming surfaces substantially flush with each other. Since they are abraded while being sealed with the thermosetting resin composition (204), it is possible to reduce the thickness without damaging the electric elements (203). Also, the electric elements (203) and the wiring patterns (201) can be prevented from being contaminated by an abrasive liquid. In this manner, it is possible to obtain an electric element built-in module whose thickness can be reduced while maintaining its mechanical strength.

Abstract: Packaged film bulk acoustic resonators may be tuned after packaging by exposing them to irradiation. In one embodiment, transparent covers may be provided so that the film bulk acoustic resonator filter may be exposed to laser irradiation to either add or remove material from the filter and to thereby adjust its frequency.

Abstract: An electric filter comprises a plurality of thin film bulk acoustic resonators arranged in series and in parallel which have different thicknesses of one or more non-piezoelectric layers, for example top electrode.

Abstract: Packaged film bulk acoustic resonators may be tuned after packaging by exposing them to irradiation. In one embodiment, transparent covers may be provided so that the film bulk acoustic resonator filter may be exposed to laser irradiation to either add or remove material from the filter and to thereby adjust its frequency.

Abstract: An immunoassay, e.g. ELISA, method and kit for determining (preferably quantitatively) an analyte adsorbed at a surface or present in a liquid sample, comprising binding the analyte to a solid phase, attaching a marker to the analyte, and detecting marker attached to the solid-phase. The invention proposes to use a combination of marker and detection (e.g. an enzyme-substrate combination) which is capable of producing a precipitate on a solid phase which carries the marker and to detect the binding of analyte to the solid phase by in-situ determining the change in surface mass of the solid phase due to the formation of the precipitate. Ellipsometry is an example of a technique suitable for determining the change of surface mass of the solid phase, which could be made of a silicon- or chromium-sputtered glass slide The invention shortens the assay time and/or improves the assay sensitivity, and allows to measure extremely low surface concentrations of analytes of interest.

Abstract: Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a substrate (20) and connected to associated circuitry by one or more transmission lines formed on the substrate (20). The arrangement of the resonators (10, 11) between the ground and signal lines of a coplanar line structure provides a means of minimising the area of the filter. Embedding a ladder filter within the coplanar transmission line structure eliminates the need for wire bonds, thus simplifying fabrication. Embodiments for 2×2, and hither order filters are described.

Abstract: In an array of acoustic resonators, the resonant frequencies of the resonators are adjusted and stabilized in order to achieve target frequency responses for the array. The method of adjusting is achieved by intentionally inducing oxidation at an elevated temperature. Thermal oxidation grows a molybdenum oxide layer on the surface of the top electrode of an electrode-piezoelectric stack, thereby increasing the relative thickness of the electrode layer to the piezoelectric layer. In one embodiment, the resonant frequency of an FBAR is adjusted downwardly as the top electrode layer increases relative to the piezoelectric layer. In another embodiment, the method of stabilizing is achieved by intentionally inducing oxidation at an elevated temperature.

Abstract: MEMS resonators (100, 400, 500) include a source of material that is capable of sublimation (128, 130, 406, 408, 502, 504). Conductive pathways (132, 134, 402, 404, 502, 504) to the material are used to supply current of ohmically heat the material in order to cause the material to sublimate. The material may be located either on or in close proximity to a resonant member (114) of the resonator. By sublimating the material, the mass of the resonant member is either increased or decreased thereby altering the resonant frequency of the resonant member. The resonant member is preferably located in a recess that is capped by a cap (202) forming a vacuum enclosure, and the material capable of sublimation preferably comprises a material that serves to getter any residual gases in the vacuum enclosure.

Abstract: In a crystal unit suitable for use in a thermostat oven, a first and a second excitation electrode are disposed on a first and a second surface of a crystal blank. A first and a second connection are disposed on the second surface as connections formed by applying a fillet of a mixture of a low-melting glass and a metal filler, and melting the fillet by heating. A third connection is disposed on a peripheral edge of the crystal blank to extend over both surfaces. A lead of the first excitation electrode is directly connected to the third connection, while a lead of the second excitation electrode is connected to the first connection through a vapor-deposited metal thin film. The second and third connections are connected to each other through a vapor-deposited metal thin film. The first and second connections are secured to a pair of holding members by brazing.

Abstract: The layer of the cover electrode, or an additional layer on the cover electrode is formed with holes, preferably produced lithographically, or similar structures. The structures have a mean spacing from one another which is smaller than the wavelength for operating the component. The structures are preferably distributed with a uniformity sufficient to effect a uniform change in the mass of the layer per area, thus producing a specific setting of the resonant frequency/ frequencies, and are preferably, on the other hand, distributed so irregularly that diffraction effects are avoided.

Abstract: Differing metallic electrodes having the same or differing thickness are formed at different locations on a support structure and/or on a single thickness film of piezoelectric material in order to form a multiple frequency resonator device having greatly separated acoustic resonance frequencies. A plurality of multiple frequency resonators can be combined to form a blank of frequency selective devices in order to handle the many different RF bands, at widely varying frequencies, that wireless communication technologies demand today.

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract: A method for producing a surface acoustic wave device, includes the steps of preparing a piezoelectric substrate, forming a thin film electrode on the piezoelectric substrate, etching the thin film electrode for forming an IDT, trimming at least one of the piezoelectric substrate and the IDT to adjust an operation frequency of the surface acoustic wave device, and rapidly altering the surface of the IDT for stabilizing the surface of the IDT.

Abstract: A high-precision, low backlash linear actuator drive mechanism characterized by minimal positional repeatability error irrespective of the direction from which a selected or target position is approached may comprise a bellows coupling operative to transmit rotational motion from a motor to a drive spindle. Rotation of the drive spindle causes linear translation thereof in an axial direction.

Abstract: The invention relates to a medical or dental-medical treatment instrument (1) having a grip sleeve (11), an oscillatory rod (13) which extends longitudinally in the grip sleeve (11) and is mounted therein in a radially or also axially elastically yielding manner, and an oscillation generator (31) for transmitting oscillations to the oscillatory rod (13). In order to attain a compact construction, the oscillatory rod (13) is of a base part and an attachment part which is fixed on the base part.

Abstract: The present invention provides a robust FBAR device and a simplified method of fabricating a FBAR device. FBAR device according to the present invention includes a membrane supporting layer between a substrate and a membrane layer, surrounding an air gap region. The membrane supporting layer supports the membrane layer to obtain a robust structure. Firstly, the method forms a sacrificial layer on the substrate, then a photoresist pattern is formed on air gap forming region at a top surface of the sacrificial layer, the method removes the sacrificial layer to form a sacrificial pattern by using the photoresist pattern as an etching mask. An insulating material then deposits on the substrate, the photoresist pattern is remove, and a membrane layer is formed on a top surface of the sacrificial layer and the insulating material layer. Finally, the method removes the sacrificial pattern to form an air gap.

Abstract: A method for manufacturing a piezoelectric component in which a resonating portion on a piezoelectric substrate is provided with a deposit that is sensitive to radiation in a range of wavelengths from 350 to 2000 nm so as to have portions thereof trimmed away to form indentations therein without burning the deposit to avoid generating heat that is injurious to the piezoelectric component and substrate. A laser beam in the frequency range of 350 to 2000 nm is then caused to impinge on the deposit to cause the formation of trimmed indentations without substrate damaging heat in a controlled manner to adjust the resonance frequency of the piezoelectric component.

Abstract: The invention relates to manufacturing electromechanical resonators for use in electromechanical filters. Such filters require resonators having different resonant frequencies. Typically all resonators are manufactured having the same resonant frequency and the resonant frequency of selected resonators is altered by the deposition of additional material on selected resonators in the form of additional layers. According to this invention, these layers are formed coextensive with the underlying layers of the resonator by first patterning larger areas of the added material, then masking the patterned areas with masks smaller than the patterned areas and etching both the underlying layer and the patterned area without moving the mask.

Abstract: In an array of acoustic resonators, the resonant frequencies of the resonators are adjusted and stabilized in order to achieve target frequency responses for the array. The method of adjusting is achieved by intentionally inducing oxidation at an elevated temperature. Thermal oxidation grows a molybdenum oxide layer on the surface of the top electrode of an electrode-piezoelectric stack, thereby increasing the relative thickness of the electrode layer to the piezoelectric layer. In one embodiment, the resonant frequency of an FBAR is adjusted downwardly as the top electrode layer increases relative to the piezoelectric layer. In another embodiment, the method of stabilizing is achieved by intentionally inducing oxidation at an elevated temperature.