Abstract: A Field Emitter Array comprising a semiconductor substrate with an emitter urface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid I.sub.max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where I.sub.max =j.sub.sat X A.sub.p-n, j.sub.sat being the saturation current density and A.sub.p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating an electric field that induces the emission of the electron current from the emitter tips.

Abstract: A TV camera tube suitable for the HN system comprising a glass faceplate covered by an n-type transparent electrode layer consisting of Nesa glass on which a thin p.sup.+ -type layer, a p-type layer and an n-type layer are deposited in succession to form a photoconductive layer. A blocking layer is deposited on the photoconductive layer to form a protected photoconductive target. A metal mesh covered by an insulating material and a collector electrode for collecting secondary electrons emitted from the target are arranged on the electron beam scanning side of the target.

Abstract: A television camera tube using a target comprising an electrically-conductive support, a blocking layer composed of a n-type amorphous silicon semiconductor, provided on the electrically-conductive support, and a light-sensitive layer composed of amorphous silicon provided on the blocking layer.

Abstract: An image pick-up tube which has a high signal to noise ratio relative to the prior art provides for a disk-shaped printed circuit board formed with a central opening through which the image can pass to strike the active part of the tube and wherein the printed circuit board carries a first amplifier stage which is very closely spaced and connected to the image pick-up means so as to provide minimum lead lengths to reduce stray capacitance and give high signal to noise ratio.

Abstract: A radiation-sensitive tube is described having a target comprising (1) an electrically conductive support, (2) at least one layer composed of insulative an amorphous silicon represented by the formula Si.sub.1-x N.sub.x wherein 1>x, y and z.gtoreq.0 and 1>x+y+z>0 and (3) a photoconductive layer composed of amorphous silicon.

Abstract: Apparatus and method are described for fabricating a long life cold cathode lectron beam semiconductor device (EBS). Fabrication is given of a vacuum tube structure capable of sustaining sufficiently high vacuum over extended time to prevent poisoning of the cold cathode and steps are give for growth of a plural tip cold cathode structure.

Abstract: The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.

Abstract: In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

Abstract: A target and target assembly for a camera tube in which a semiconductor plate is provided on an annular support. The plate has a semiconductor monocrystalline edge portion which comprises an integrated circuit for processing the electrical signals originating from the target. The central portion of the plate is provided with a radiation-sensitive layer having one or more radiation-permeable electrodes. The integrated circuit is provided with inputs which are connected to the electrodes and with leads for the supply and control voltages. A window is provided on the electrodes and overlaps the inner edge of the support, the window, the edge portion and the support adjoining each other in a vacuum-tight manner.

Abstract: An electron beam tube having a cold cathode capable of being used as a caa tube or a display tube. The tube is constructed of two sections which are fitted together in a vacuum. The first section includes the tube neck and face section and an annular opening having a taper at the end thereof. The second section houses the cold cathode and a surface contact area for abuttably engaging a resilient electrical connector housed in the first section. The second section is forceably fitted over the taper on the first section to effect a vacuum tight seal.

Abstract: A thin target wafer of silicon includes a light receiving surface which is mounted to an inner faceplate surface of a pickup tube envelope by an interposed region of transparent adhesive. The peripheral edge of the adhesive is sealed by a conductive sealant material to substantially prevent outgassing of the adhesive within the interior of the envelope. In one embodiment, a conductive sealant material is provided by which electrical contact from the wafer to an electrical connector, extending external to the envelope, is established.A method of assembly of the wafer with the faceplate is provided wherein residual bubbles of the interposed flowable adhesive are substantially collapsed by assembly of the wafer and the faceplate in a vacuum, and, thereafter, exposing the wafer-faceplate assembly to atmospheric pressure.

Abstract: A camera tube target formed by a radiation-receiving silicon layer which on a side to be scanned by the electron beam has a chalcogen-containing layer having intrinsic conductivity which forms a hetero junction with the silicon layer, the chalcogen-containing layer comprising at least one element of the fourth group of the periodic table of elements in an atomic ratio to the chalcogen component lying between 1:1 and 1:2.

Abstract: A video cathode tube having a matrix of low emission threshold field effect emitters oriented to emit toward a luminescent layer. A first system of mutually insulated conductive paths is arranged along rows of emitters with the emitters in any row electrically connected to a corresponding conductive path of the first system. A second system of mutually insulated conductive paths is disposed in contact with the luminescent layer and extends in front of columns of the emitters. A first bank of contacts individually connected to respective conductive paths of the first system are sequentially energized to a first potential, and a second bank of contacts individually connected to respective conductive paths of the second system are sequentially energized to a second potential. A control grid connectable to a voltage source is interposed between the matrix of emitters and the second system of conductive paths.

Abstract: An electron bombarded semiconductor amplifier with a simplified target construction where the common point of the diode array is returned to ground enabling the radio frequency bypassing capacitors to be made a smaller size and the dc blocking capacitors to be provided by separate capacitors outside of the vacuum envelope and also optimized.

Abstract: An electron-bombarded semiconductor (EBS) source including plural EBS diodes connected in series at the fundamental radio frequency operating range delivers power to a load. A single voltage supply is provided and radio frequency isolation means is connected between the series connected diodes and said supply to effectively connect the diodes in parallel with respect to said supply voltage and current.

Abstract: The photoelectric surface of a photocathode made of a semiconductor single crystal is made minutely rough and, accordingly, lusterless, so that the transmissivity of a polarized light beam incident on the photoelectric surface is almost unaffected by the direction of electric field vector of the beam.

Abstract: A target for an image pickup tube having high sensitivity, low dark current and low amount of lag-image is manufactured by forming a hetero-junction by the evaporation process. A first layer of ZnS.sub.x Se.sub.1.sub.-x or Zn.sub.u Cd.sub.1.sub.-u S (wherein 0 .ltoreq. x .ltoreq. 1 and 0 .ltoreq. u .ltoreq. 1) is deposited on a light transmitting substrate having a coefficient of linear expansion of 56 .times. 10.sup..sup.-7 /.degree.C - 110 .times. 10.sup..sup.-7 /.degree.C and a second layer of (Zn.sub.y Cd.sub.1.sub.-y Te).sub.z (In.sub.2 Te.sub.3).sub.1.sub.-z (wherein 0.1 .ltoreq. y .ltoreq. 0.9 and 0.7 .ltoreq. z .ltoreq. 1) is deposited on the first layer. The substrate is then heat treated in an inert gas atmosphere or under vacuum at a temperature of 350.degree.-650.degree.C, preferably 500.degree.-600.degree.C for a time period of 5-90 minutes, preferably 5-15 minutes.

Abstract: A camera tube target scanned by an electron beam having a radiation-receiving silicon layer which on a side to be scanned by the electron beam has a chalcogen-containing layer comprising at least one element of the third main group of the periodic table of elements, e.g., gallium which forms a heterojunction with the silicon layer.

Abstract: This disclosure is directed to a photovoltaic detector having specific response to the infrared range, wherein the detector comprises a metal-semiconductor diode having a semi-transparent electrode and disposed on a specially prepared substrate of a narrow band gap semiconductor material or on an epitaxial layer or evaporated film of such material provided on a substrate. In a specific example, the narrow band gap semiconductor material of the substrate is specially prepared (Pb,Sn)Te or an epitaxial layer or evaporated film of (Pb,Sn)Te on a (Pb,Sn)Te substrate. The detected radiation is transmitted through the semi-transparent electrode on top of the photovoltaic detector.

Abstract: A new and improved microminiature field emission electron source and method of manufacturing is described using a single crystal semiconductor substrate. The substrate is processed in accordance with known integrated microelectronic circuit techniques to form a plurality of integral, single crystal semiconductor raised field emitter tips at desired field emission cathode sites on the surface of the substrate in a manner such that the field emitter tips are integral with the single crystal semiconductor substrate. An insulating layer and overlying conductive layer may be formed in the order named over the semiconductor substrate and provided with openings at the field emission site locations to form micro-anode structures for each field emitter tip.

Abstract: A display system having a cathode ray tube signal generator in which a solid state junction target utilizes a layer of semiconductor material and a layer of dielectric material to form a junction. The signal generator may be of the monoscope type in which portions of the target are masked or it may be of the photosensitive type in which an image is projected onto the target. A signal derived from the signal generator is displayed on a second cathode ray tube.

Abstract: 1. A television camera tube comprising an elongated envelope, an electron gun in one end of said envelope for producing an electron beam, a target electrode in the other end of said envelope and in the path of said beam, said target electrode comprising a transparent conductive coating, a N-type photoconductor on said coating, a P-type photoconductor on said N-type photoconductor, another N-type photoconductor on said P-type photoconductor, a rectifying junction formed between each adjacent pair of said photoconductors and means for applying a reverse bias across at least one of said junctions.

Abstract: A signal display system having a visual display and a display signal generator in which a semiconductor junction target has a high conductivity P layer, a low conductivity N layer, and a surface layer of insulating material having holes in the shape of letters or other characters. The target semiconductor junction is reverse biased so that when an electron beam striking the target is scanned over the character apertures, it will produce carrier multiplication in the target and an output signal several orders of magnitude greater than a conventional monoscope. The same principle may be used for a camera pickup tube when beam electrons returning from a light sensitive target are multiplied on striking a reverse biased junction target.