Abstract: An MI sensor includes: an amorphous wire; an insulator layer formed on an outer peripheral surface of the amorphous wire; and an X-axis coil, a Y-axis coil, and a Z-axis coil which are formed, in a spiral shape, on an outer peripheral surface of the insulator layer. The X-axis coil, the Y-axis coil, and the Z-axis coil are formed of a conductive layer, and the X-axis coil, the Y-axis coil, and the Z-axis coil are arranged in directions orthogonal to each other.

Abstract: A sensor die may include a set of sensing elements and a test structure associated with determining a magnetic sensitivity of the set of sensing elements. The test structure includes a first test sensing element sensitive in a direction in a plane defined by a surface of the sensor die, a second test sensing element sensitive in the direction in the plane defined by the surface of the sensor die, and a wire on chip (WoC) associated with applying a magnetic field to the first test sensing element and the second test sensing element. The first test sensing element, the second test sensing element, and the WoC may be arranged such that, when current flows through the WoC, the first test sensing element senses a component of the magnetic field in the direction, and the second test sensing element senses a component of the magnetic field in a perpendicular direction.

Abstract: The magnetic detection device includes: a first magnetic rotary body which rotates about a rotation shaft and has an outer circumferential portion which is a magnetic body; a second magnetic rotary body has an outer circumferential portion which is a magnetic body; a magnet which has a magnetization direction along the axial direction; a first magneto-resistive element provided on another side in the axial direction of the magnet; a second magneto-resistive element provided on one side in the axial direction of the magnet; a first magnetic guide provided between the magnet and the first magneto-resistive element; and a second magnetic guide provided between the magnet and the second magneto-resistive element, wherein the outer circumferential portion of the first magnetic rotary body and the outer circumferential portion of the second magnetic rotary body cause different magnetic fields between the magnet and the respective outer circumferential portions.

Abstract: The magnetic field detector includes an x-axis magnetic sensor, a y-axis magnetic sensor, and a z-axis magnetic sensor for detecting magnetic field components in three orthogonal axis directions. Each of the magnetic sensors includes a magnetic impedance element having an impedance that varies in accordance with an ambient magnetic field and an output circuit configured to output a magnetic field detection value that varies in accordance with the impedance of the magnetic impedance element. The magnetic field detector includes an oscillator configured to supply a common drive signal to the magnetic impedance element of each of the magnetic sensors, wherein each of the magnetic sensors outputs, in response to the drive signal, the magnetic field detection value from the output circuit.

Abstract: An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.

Abstract: A coil wire includes a core wire and a winding wire. The winding wire is wound around a circumference of the core wire so as to form a plurality of spirals. The coil wire satisfies one of: (i) an outer surface of the core wire is exposed, and a distance between the outer surface of the core wire and an inner circumferential surface of part of the winding wire is smaller than a thickness of a first insulating film coated on the winding wire; or (ii) the outer surface of the core wire is coated by a second insulating film, and a distance between an outer surface of the second insulating film and the inner circumferential surface of part of the winding wire is smaller than a thickness of a thicker one of the first insulating film and the second insulating film.

Abstract: Embodiments disclosed herein relate to systems, devices and methods for monitoring dimensional changes in medical devices attached to or implanted in the body, such as wound fillers. Disclosed embodiments may facilitate measuring the degree of wound closure by incorporating conductive elements into the wound filler. In some embodiments, the conductive elements may be conductive filler, a flexible conductive element, or an arrangement of discrete non-flexible conductive elements. The density of conductive material in an area or volume of the wound filler upon wound closure may be detected by a detection device that assesses the local dielectric constant of the wound filler, such as through use of a capacitive plate, or by a detection device that measures the resonant frequency of a conductive element.

Abstract: A GMI bio-magnetic measuring device based on a magnetic-bead concentration and a simulated lesion shape, includes an impedance analyzer, a Helmholtz coil, a metallic fiber, a fluxgate uniaxial magnetometer, a data acquisition card, a computer, a magnetic-bead-concentration adjustable platform and a lesion shape simulation platform. The metallic fiber is fixedly disposed on the magnetic-bead-concentration adjustable platform or the lesion shape simulation platform. Two terminals of the metallic fiber are electrically connected with a connection terminal of the magnetic-bead-concentration adjustable platform or the lesion shape simulation platform, and then are electrically connected with an input end of the impedance analyzer. An output end of the impedance analyzer is electrically connected with the computer. The magnetic-bead-concentration adjustable platform or the lesion shape simulation platform is placed at the interior of the Helmholtz coil.

Abstract: A magnetic sensor comprising: an application specific integrated circuit (ASIC); an insulating protective film formed on a surface of the ASIC; a substrate film formed on the insulating protective film; and a magnetic field detection element formed on the substrate film, the magnetic field detection element including two magnetic wires on the substrate film, a detection coil surrounding the two magnetic wires, two electrodes coupled to the two magnetic wires for wire energization, and two electrodes coupled to the coil for coil voltage detection.

Abstract: A system includes power harvesting circuitry in combination with energy storage and conversion circuitry. The power harvesting circuitry may be configured to respond to energy generated by rotary machinery having at least condition being monitored by at least one component having at least one electronic circuit, and provide harvested power. The energy storage and conversion circuitry may be configured to respond to the harvested power provided from the power harvesting circuitry, and provide stored and converted power to the at least one component for monitoring the least one condition of the rotary machinery.

Abstract: The present invention provides a triaxial magnetism detecting apparatus having a high mechanical strength and being compact in size by simplifying the arrangement configuration of magnetism detectors for the reduction of the number of components and allowing easy angular adjustment of the magnetism detectors and easy installation of the magnetism detectors on the apparatus body, and a satellite. A triaxial magnetism detecting apparatus has a power supply board, a circuit board, and a magnetism detecting unit, which are fixed on a body, and the circuit board and the magnetism detecting unit are horizontally connected. By using the magnetism detecting unit, the triaxial magnetism detecting apparatus detects magnitudes of magnetic fields in mutually perpendicular X-axis, Y-axis, and Z-axis directions.

Abstract: An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.

Abstract: The invention describes a light converting device comprising: a bonded layer stack comprising a light converter and a diamond layer, wherein the diamond layer is bonded to a bonding surface of the light converter, wherein the light converter is adapted to convert laser light to converted light, wherein a peak emission wavelength of the converted light is in a longer wavelength range than a laser peak emission wavelength of the laser light, wherein a refractive index of the diamond layer is bigger than a refractive index of the light converter, and a light outcoupling structure attached to a first surface of the bonded layer stack, wherein a second surface of the bonded layer stack is a light-entrance surface arranged to receive the laser light, wherein the bonding surface is arranged between the first surface and the second surface of the bonded layer stack, wherein a refractive index of the light outcoupling structure is at least 90% of the refractive index of the light converter, and wherein the light ou

Abstract: A planar Hall effect (PHE) sensor for measuring at an external magnetic field includes a plurality of elongated magnetic regions. Each magnetic region includes a ferromagnetic material that is magnetized along a longitudinal axis. The magnetic regions cross one another at an overlap region that is characterized by a plurality of easy magnetic axes. At least two pairs of electrical leads are each aligned along one of the easy magnetic axes. A current source may be connected to a first pair of the electrical leads to cause a current to flow through the overlap region along a first easy magnetic axis. A voltage measurement device may be connected to another pair of the electrical leads to measure a PHE voltage that is generated by a component of the external magnetic field that is perpendicular to the easy magnetic axis along which the overlap region is magnetized.

Abstract: A connection module for an electrical energy storage device of a motor vehicle includes a first connection element and a second connection element for connecting to the electrical energy storage device and to a traction network. The connection module includes busbars which connect the first connection element and the second connection element to one another. The connection module further includes a primary current measurement element and a secondary current measurement element, wherein the secondary current measurement element operates contactlessly. A power supply system for a motor vehicle is also provided.

Abstract: A magnetic field sensor that includes a differential bridge in which each path of the bridge includes a first type of magnetic field sensing device and a second type of magnetic field sensing device. The first and second types of magnetic field sensing devices differ in the magnetic moment imbalance present in the synthetic antiferromagnets (SAFs) included in their reference layers such that that different types of devices produce a different response to perpendicular magnetic fields, but the same response to in-plane magnetic fields. Such different magnetic moment imbalances in the SAFs of magnetic field sensing devices included in a bridge allow for accurate sensing of perpendicular magnetic fields in a differential manner that also cancels out interference from in-plane fields. Techniques for producing such magnetic field sensing devices on an integrated circuit are also presented.

Abstract: A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.

Abstract: Systems and methods which provide a semiconductor with thin metallic film deposition sensor configuration are described. Thin metallic film semiconductor sensors of embodiments may be utilized in determining various impingements upon the sensor surface, such as from objects touching, hovering near, or light sources illuminating a sensor surface. Embodiments of a thin metallic film deposition semiconductor sensor provide a non-resistive, non-capacitive sensor configuration operable for determining position of various objects, including both electrically conductive objects and non-electrically conductive objects. A semiconductor with thin metallic film sensor of embodiments may additionally or alternatively provide a magnetic field sensor configuration operable for determining magnitude and/or direction with respect to a magnetic field.

Abstract: A magnetic sensor having a yoke that can achieve large magnetic flux density and that can be accurately formed is provided. The magnetic sensor includes magnetic field detection element 21 that detects a magnetic field in first direction X and first yoke 23 that is located near magnetic field detection element 21 and extends in second direction Z that is orthogonal to first direction X. First yoke 23 includes first portion 23a that is located away from magnetic field detection element 21 at least in first direction X and second portion 23b that is located farther away from magnetic field detection element 21 than first portion 23a with respect to second direction Z. The second portion 23b has surface 23f that is opposite to interface 23d with the first portion 23a, surface 23f having a curved shape that protrudes in a direction away from the first portion 23a.

Abstract: A magnetic field detection sensor includes a magneto-impedance element and detects an external magnetic field from an output obtained by applying alternating current to the magneto-impedance element using a magneto-impedance effect. The magneto-impedance element includes a non-magnetic board and a magnetic film formed on a surface of the non-magnetic board, a longitudinal direction of the magnetic film is set as a detection direction of the external magnetic field, and magnetic anisotropy is provided such that a magnetization easy axis of the magnetic film is the same as the detection direction of the external magnetic field. The magnetic field detection sensor further includes a magnetic field generating portion which generates a magnetic field in a thickness direction of the magnetic film.

Abstract: Micro-imaging may be performed with an ultra-sensitive atomic magnetometer (AM) and an array of flux guides (FGs). The array of FGs may be configured to act as a magnetic lens that expands microscopic magnetic distribution to match dimensions of the AM. A plurality of single channel AMs may be combined into an array, or the AM may include an array of photodetectors, to realize multi-channel operation.

Abstract: An arrangement for measuring an angular position of a rotor with respect to a stator, comprises a multi-pole magnet mounted on the rotor, and a sensor mounted on the stator and a plurality of sensor elements organized in two groups or four groups for measuring a magnetic field component. A method for calculating the angular position comprises making a sum of signals of the elements of each group, a ratio of the two sums, and an arctan function. Alternatively the method may comprise making a sum of signals, the difference of sums, a ratio of the differences, and an arctan function. An integrated sensor, and the use of such arrangement or sensor in an automotive environment.

Abstract: Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

Abstract: A reduced size/thickness magnetic detection device includes: a substrate; and a magneto-impedance element at one substrate surface side and including a magneto-sensitive wire and a detection coil. The wire senses an external magnetic field component in a first axis direction in which the wire extends. The coil loops around the wire, and includes left-side and right-side coil parts coexisting along the wire, and a magnetic field direction changing body of soft magnetic material having at least a part at another substrate surface side or in the substrate above an intermediate position between left-side and right-side coil parts. The body can change an external magnetic field component in a third axis direction intersecting the substrate to a measurement magnetic field component in the first axis direction. The external magnetic field component in the third axis direction can be detected from a left-side coil part output and a right-side coil part output.

Abstract: An electrical power measurement device measures electrical power consumed in a circuit to be measured including a power source, a load, and a pair of electric wires connecting the power source with the load. The device includes a sensor unit including a plurality of the sensor parts including a magnetic element in which element terminals are formed at both ends of a magnetic film, a measurement resistor connected to the magnetic element in series, and a detecting means that detects a voltage change of the magnetic element and outputs a predetermined component; an addition means that adds the outputs of the detecting means of all of the sensor parts; and a fixing means that fixes the magnetic elements of the sensor parts, at equal distance positions from a virtual axis serving as a position reference at which the one electric wire is arranged, in a direction facing the virtual axis.

Abstract: The present invention relates to a compound exhibiting Giant Magneto-Impedance (GMI) properties. The general chemical formula of the compound is (FeXCo100-X)100-(?+?+?)Cr?Si?B?, characterized in that ?<? and ?<?, wherein ? is preferably in the range of 2 to 4% by weight, ? is preferably in the range of 11.5% to 13% by weight, and ? is preferably in the range of 11% to 13% by weight, and X is preferably about 6% by weight. The chemical formula more preferably is (Fe6%Co94%)72.5%Cr2% Si12.5%B13%. The present invention also relates to a giant magneto-impedance (GMI) based sensing device for non-destructive contactless detection of carburization in austenitic stainless steel samples in field.

Abstract: Kesterite-based photovoltaic devices formed on flexible ceramic substrates are provided. In one aspect, a method of forming a photovoltaic device includes the steps of: forming a back contact on a flexible ceramic substrate; forming a kesterite absorber layer on a side of the back contact opposite the flexible ceramic substrate; annealing the kesterite absorber layer; forming a buffer layer on a side of the kesterite absorber layer opposite the back contact; and forming a transparent front contact on a side of the buffer layer opposite the kesterite absorber layer. A roll-to-roll-based method of forming a photovoltaic device and a photovoltaic device are also provided.

Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

Abstract: The invention relates to a magnetic field measurement device, including a detector (4) configured to measure the amplitude of an output signal at a harmonic of an oscillation frequency of an excitation source, said amplitude being proportional to the magnetic field (B) to be measured, characterised in that it comprises an excitation circuit configured to associate with a principal excitation source (B1cos?t) oscillating at a principal oscillation frequency at least one secondary excitation source (B2cos(?/3t+?2)) oscillating at a secondary oscillation frequency that is a fraction of the principal oscillation frequency, said fraction being odd if said harmonic is odd, and even if said harmonic is even.

Abstract: Methods, apparatus, systems and articles of manufacture are disclosed to determine an operational status of a device. An example method includes determining, with a processor, a first multi-dimensional measurement of a first magnetic field generated by a power cord to supply power to a device; and determining, via the processor, an operational status of the device based on the first multi-dimensional measurement.

Abstract: A magnetic field detecting device which comprises a magnetic impedance sensor including a magnetic impedance element 1 in which a pulse electrical current or a high frequency electrical current is applied from an oscillator 2 to an amorphous wire 10 and an alternate current or AC damped oscillation voltage, which is induced in a detecting coil 11 wound around the amorphous wire 10 and has a magnitude corresponding to an external magnetic field, is output, and an arbitrary magnetic field is applied to the amorphous wire by means of the magnetic field generated on the detecting coil 11 energized by connecting the detecting coil 11 to a voltage source or to a current source E through an impedance network 3 comprising of a resistor R or a coil L or a condenser C or comprising a combination of the resistor R, the coil L, and the condenser C.

Abstract: A magnetic field sensor with enhanced immunity to external magnetic interference is presented. Included is a magnetic field signal generator and a demodulator. The magnetic field signal generator produces a magnetic field signal having a modulated signal portion in a first frequency band based on a sensed modulated AC bias magnetic field. The modulated AC bias magnetic field is produced by movement of ferromagnetic target relative to a bias coil when an AC signal is applied to the bias coil. When the magnetic field signal also includes an unwanted signal portion in a second frequency band based on external magnetic interference, demodulation performed by the demodulator results in the modulated signal portion being shifted from the first frequency band to a third frequency band and the unwanted signal portion being shifted to the first frequency band. The bias coil may be provided as part of the magnetic field sensor.

Abstract: A differential transformer magnetic permeability sensor includes a substrate, a drive coil, a first differential coil, a second differential coil, a first interconnection pattern, and a second interconnection pattern. The first differential coil is disposed at a side of a first surface of the substrate, and an induced voltage is generated therein when the drive coil is driven. The second differential coil is disposed at a side of a second surface of the substrate, and an induced voltage is generated therein when the drive coil is driven. The first interconnection pattern is located on the first surface and allows the first differential coil to serve as a reference coil, and the second differential coil as a sensing coil. The second interconnection pattern is located on the second surface and allows the second differential coil to serve as a reference coil, and the first differential coil as a sensing coil.

Abstract: A magnetic field detecting device which comprises a magnetic impedance sensor including a magnetic impedance element 1 in which a detecting coil 11 wound around an amorphous wire 10 for detecting and outputting the external magnetic field around the amorphous wire at a rise time and a fall time of the pulse current in case of the pulse current is applied to the amorphous wire and a signal processing device 3 includes two sample-hold circuit 31, 32 for respectively sample-holding the alternate current damped oscillation voltage at the rise time and the fall time of the applied pulse current, wherein the output signal in response to the external magnetic field around the amorphous wire is output based on the detected two alternate current damped oscillation voltages output at the rise time and the fall time of the pulse current.

Abstract: Method and apparatus for a current sensing device including a magnetoresistive magnetic field sensing element positioned with respect to a shaped conductor such that an applied field generated by current through the shaped conductor forms an offset angle theta defined by the applied field and a field of a pinning layer of the magnetoresistive element. The offset angle increases a linearity of the device output for current in the shaped conductor flowing in a first direction. A further sensor can increase linearity in the opposite direction.

Abstract: An apparatus for measuring a magnetic field is described, which comprises a core and an exciter coil for remagnetizing the core material. The remagnetizable core material is embodied as a layer or as multiple layers disposed at a distance from one another, and the core has a maximum total extension G where 2.5 mm?G?0.2 mm, a ratio of length to width that is greater than or equal to a value of twenty, and a thickness D where 2 ?m?D?0.2 ?m. Also described is a corresponding method for measuring a magnetic field.

Abstract: A magnetic memory system includes a superconductor circuit and one or more magnetic memory elements to store data. To write data, a driver circuit in the superconductor circuit generates a magnetic signal for transmission over a superconductor link extending between the superconductor circuit and the magnetic memory element. To read data, a sensing circuit in the superconductor circuit monitors a superconductor link extending from sensing circuit to the magnetic memory element. The magnetic memory element can be a spin-transfer type magnetic memory element.

Abstract: A method is described for manufacturing a magnetic sensor module (100, 200, 300, 400) having magnetic sensor elements (130, 330, 430) monolithically integrated at a semiconductor chip (110) which comprises an integrated circuit.

Abstract: Disclosed is a passive, in-situ pressure sensor. The sensor includes a sensing element having a ferromagnetic metal and a tension inducing mechanism coupled to the ferromagnetic metal. The tension inducing mechanism is operable to change a tensile stress upon the ferromagnetic metal based on a change in pressure in the sensing element. Changes in pressure are detected based on changes in the magnetic switching characteristics of the ferromagnetic metal when subjected to an alternating magnetic field caused by the change in the tensile stress. The sensing element is embeddable in a closed system for detecting pressure changes without the need for any penetrations of the system for power or data acquisition by detecting changes in the magnetic switching characteristics of the ferromagnetic metal caused by the tensile stress.

Abstract: A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

Abstract: A vertical Hall sensor includes a Hall effect region and a plurality of contacts formed in or on a surface of the Hall effect region. The plurality of contacts are arranged in a sequence along a path extending between a first end and a second end of the Hall effect region. The plurality of contacts includes at least four spinning current contacts and at least two supply-only contacts. The spinning current contacts are configured to alternatingly function as supply contacts and sense contacts according to a spinning current scheme. The at least four spinning current contacts are arranged along a central portion of the path. The at least two supply-only contacts are arranged on both sides of the central portion in a distributed manner and are configured to supply electrical energy to the Hall effect region according to an extension of the spinning current scheme.

Abstract: A magnetic detection element includes a magnetoresistance effect portion composed of a magnetoresistance effect material and a pair of yoke portions. The pair of yoke portions is composed of a soft magnetic material and are respectively arranged so as to be electrically connected to both sides of the magnetoresistance effect portion. The pair of yoke portions guides magnetic flux into the magnetoresistance effect portion. The magnetic detection element also includes a bypass portion, which is composed of a soft magnetic material and is saturated with magnetic flux at lower magnetic field intensity than the yoke portions, and which guides a part of the magnetic flux generated in the yoke portions so as to divert the magnetic flux from the magnetoresistance effect portion.

Abstract: A magnetic sensor device includes a thin film first magnetic body provided with a magnetic path convergence/divergence section arranged on a predetermined axis, and at least a pair of wing-shaped sections extending from the magnetic path convergence/divergence section toward the opposite sides of said axis, a thin film second magnetic body provided with a magnetic path convergence/divergence section arranged on the predetermined axis to be spaced from the magnetic path convergence/divergence section of the first magnetic body, at least a pair of wing-shaped sections extending from this magnetic path convergence divergence toward the opposite sides of the axis, a first coil wound around the first magnetic body, a second coil wound around the second magnetic body, and a magnetoresistance effect element arranged between the magnetic path convergence/divergence section of the first magnetic body and the of the second magnetic body.

Abstract: A magnetism sensor comprises a magnetoresistive element, the resistance of which changes due to the application of an induced magnetic field from the current being measured, and a fixed-resistance element. The fixed-resistance element has a self-pinned ferromagnetic fixed layer comprising a first ferromagnetic film and a second ferromagnetic film coupled antiferromagnetically with an antiparallel coupling film interposed therebetween. The antiparallel coupling film is a ruthenium film that exhibits an antiferromagnetic coupling effect with a first peak thickness. The difference between the degrees of magnetization of the first ferromagnetic film and the second ferromagnetic film is effectively zero.

Abstract: An integrated dual-axis anisotropic magnetoresistive sensor can include first and second sensor units. A resistor bridge of the first sensor unit can include a plurality of magnetoresistors, each having at least one strip of anisotropic magnetoresistive material with a longitudinal axis substantially parallel to the technological anisotropy axis of the material. A resistor bridge of the second sensor unit can include a plurality of magnetoresistors having a plurality of strips of the anisotropic magnetoresistive material, the plurality of strips including a first subset having longitudinal axes aligned at a first angle to the technological anisotropy axis and a second subset having longitudinal axes aligned at a second angle to the technological anisotropy axis. The second angle can have the same magnitude as the first, but be rotated in an opposite direction from the technological anisotropy axis.

Abstract: A magnetic sensor includes a plurality of assemblies combined. Each assembly includes a plurality of tunnel magnetoresistive elements, a capacitor and a fixed resistor. The tunnel magnetoresistive dements are (i) disposed in such a way that fixed magnetization directions of fixed magnetic layers are substantially identical and changeable magnetization directions of free magnetic layers with no magnetic field applied are substantially identical and (ii) connected to each other in series-parallel. The capacitor is connected in parallel to the tunnel magnetoresistive elements. The fixed resistor is connected in series to the tunnel magnetoresistive elements and to the capacitor. The assemblies are (i) disposed in such a way that the fixed magnetization directions of the fixed magnetic layers of the assemblies have a relative angle of more than 90 degrees and (ii) connected to each other in series and/or in parallel.

Abstract: A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.

Abstract: A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias structure. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.

Abstract: A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.

Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.