Abstract: A sensor system may include a first magnet arranged such that a position of the first magnet corresponds to a position of a trigger element on a linear trajectory. The sensor system may include a second magnet arranged such that a position of the second magnet corresponds to a selected position of a selection element. The sensor system may include a magnetic sensor to detect a strength of a first magnetic field component, a strength of a second magnetic field component, and a strength of a third magnetic field component. The magnetic sensor may be further to determine the position of the trigger element based on the strength of the first magnetic field component and the strength of the second magnetic field component, and to determine the selected position of the selection element based on the strength of the third magnetic field component.

Abstract: A Hall effect sensor system includes a Hall effect sensor and a drive-sense circuit (DSC). The Hall effect sensor includes an input port to receive a DC (direct current) current signal and generates a Hall voltage based on exposure to a magnetic field. The DSC generates the DC current signal based on a reference signal and drives it via a single line that operably couples the DSC to the Hall effect sensor and simultaneously to sense the DC current signal via the single line. The DSC detects an effect on the DC current signal corresponding to the Hall voltage that is generated across the Hall effect sensor based on exposure of the Hall effect sensor to the magnetic field and generates a digital signal representative of the Hall voltage.

Abstract: A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Abstract: The disclosure relates to a printed circuit board arrangement with a printed circuit board with at least two current conducting layers. The current conducting layers extend in an axial direction of the printed circuit board and are arranged in succession in a thickness direction of the printed circuit board. The printed circuit board arrangement has a busbar which is arranged on a lateral surface of the printed circuit board and is in contact with at least one part of the current conducting layers of the printed circuit board.

Abstract: A current-sensing system includes a conductor for carrying a first electrical current generating a first magnetic field. A device, spaced from the conductor by a clearance, includes a semiconductor integrated circuit die in a package. The semiconductor integrated circuit die includes at least one elongated bar of a first ferromagnetic material magnetized by the first magnetic field; a sensor comprising a first coil wrapped around the at least one elongated bar to sense the bar's magnetization; and an electronic driver creating a second electrical current flowing through a second coil wrapped around the at least one elongated bar generating a second magnetic field to compensate the at least one bar's magnetization. The package has a first outer surface free of device terminals. A discrete plate of a second ferromagnetic material is positioned in the clearance and is conformal with the first outer surface of the package.

Abstract: Current sensor packages are described including a leadframe configured to carry a current to be sensed and a current sensor that is electrically isolated from the leadframe. The current sensor is disposed adjacent to a first portion of the leadframe that includes a plurality of notches. An encapsulating material is configured to encapsulate the current sensor and at least a part of the first portion of the leadframe that is adjacent to the current sensor and includes the plurality of notches. The current sensor includes a substrate, a first magnetic field sensing element that is formed on the substrate, and a second magnetic field sensing element that is formed on the substrate. The first magnetic field sensing element and the second magnetic field sensing element are disposed on opposite sides of a central axis of the first portion of the leadframe.

Abstract: The subject matter described herein relates to a semiconductor circuit arrangement with a semiconductor substrate with an integrated Hall sensor circuit. During a first clock phase PHspin1 a first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) can be generated in the Hall effect region that has a first dependency on a mechanical stress of the semiconductor substrate. During a second clock phase PHspin2 a second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2) can be generated in the Hall effect region that has a second dependency on a mechanical stress of the semiconductor substrate. The semiconductor circuit arrangement is designed to ascertain a specific mechanical stress component based on a combination of the first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) and of the second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2).

Abstract: A current detection device of an embodiment includes a conductor, a first magnetic field detector, a second magnetic field detector, and a conductive film. The conductor includes a first region, a second region, and a third region connecting an edge of the first region and an edge of the second region. The first magnetic field detector is disposed between the first and second regions. The second magnetic field detector is disposed opposite to the first magnetic field detector with respect to the third region. The conductive film is bonded to a conductor layer including a slit having a width larger than each of widths of magneto-sensitive parts of the first and second magnetic field detectors and covers the slit, the conductor layer being provided between the conductor and each of the first and second magnetic field detectors.

Abstract: A busbar for current transport comprises conductive material, which extends along a current direction. A recess for a magnetic field sensor extends into the conductive material, a middle of the recess being shifted by a predetermined distance from a middle of the conductive material in the direction of an edge of the conductive material, so that, within a frequency range, a frequency dependency of a magnetic field, which is induced by an alternating current flowing along the current direction, is reduced in comparison with a busbar having a central recess.

Abstract: A wiring structure includes a wiring such as a flexible printed wiring board, a permanent magnet, and a relay piece. The wiring has a conductive portion. The permanent magnet has electrical conductivity. The relay piece is formed of a conductive metal and connected to the conductive portion of the wiring. The relay piece has the permanent magnet fixed thereto by magnetic attraction.

Abstract: A method for detecting a magnetic field using an apparatus including a plurality of magnetic field sensitive devices each having at least three terminals and grouped into N groups, with N>1, wherein each group k includes 2k-1 magnetic field sensitive devices, for 1?k?N, wherein the plurality of magnetic field sensitive devices are coupled such that, for 1<k?N, supply currents flowing through two magnetic field sensitive devices in group k flow through one magnetic field sensitive device in group k-1. The method includes providing a supply current independently through each magnetic field sensitive device of group N; tapping an output signal at at least one contact of at least one magnetic field sensitive device of each group k of the N groups; and combining each tapped output signal into an overall output signal representing a measurement of the magnetic field.

Abstract: A conductive particle detecting device includes a plurality of electrodes, a permanent magnet, and a detecting circuit. The plurality of electrodes are arranged at intervals in a lubricant. The permanent magnet accumulates conductive particles in the lubricant between adjacent electrodes by a magnetic force. The detecting circuit detects target conductive particles based on electrical resistance between the adjacent electrodes. An attractive force of the permanent magnet acting on the conductive particles between the adjacent electrodes is set such that the lubricant remains as a non-conductive layer around fine-sized conductive particles having a smaller particle size than the target conductive particles.

Abstract: A rotary movement position sensor is presented that includes a first sensor output, a second sensor output, a first signal processing unit, a second signal processing unit, a first system output providing the output of the first signal processing unit or of the second signal processing unit, and a second system output providing the output of the second signal processing unit or of the first signal processing unit. A swapping unit that swaps the first signal processing unit between the first sensor output and first system output to the second sensor output and second system output and simultaneously swaps the second signal processing unit from the second sensor output and second system output to the first sensor output and first system output and vice versa. A method for detecting errors in a position sensor system is also presented.

Abstract: A magnetic sensor that includes a Hall element; a switch circuit configured to switch a direction of a drive current supplied to the Hall element between a first direction and a second direction; a magnetic field detection circuit configured to execute a detection operation for detecting a target magnetic field acting on the Hall element, based on a first difference between a Hall voltage generated in the Hall element when the drive current is supplied to the Hall element in the first direction and a Hall voltage generated in the Hall element when the drive current is supplied to the Hall element in the second direction; and a test magnetic field generation circuit configured to generate a test magnetic field different from the target magnetic field in a test operation.

Abstract: A current sensor system, includes: a plurality of conductors that are integrated into a substrate, each of the plurality of conductors having a respective first through-hole formed therein and a plurality of current sensors, each of the plurality of current sensors being disposed on the substrate. Each of the plurality of current sensors is disposed above or below the respective first through-hole of a different one of the plurality of conductors, and the substrate includes a plurality of conductive traces, each coupled to at least one of the plurality of current sensors.

Abstract: Systems and methods for spin-based detection of electromagnetic radiation at terahertz and sub-terahertz frequencies is provided. The detector can include a heterostructure, a magnetic field generator, and an electrical circuit. The heterostructure can include a first layer formed of an antiferromagnetic material (AFM) in contact with a second layer of a heavy metal (HM) or a topological insulator. The magnetic field generator can generate a magnetic field oriented approximately parallel to an easy axis of the first layer and approximately parallel to a propagation direction of electromagnetic radiation. The circuit can be in electrical communication with the second layer. The first layer can inject a spin current into the second layer in response to receipt of electromagnetic radiation having a sub-terahertz or terahertz frequency. The second layer can convert the injected spin current into a potential difference. The circuit can be configured to output a signal corresponding to the potential difference.

Abstract: A magnetic field sensor system comprising a first magnetic field sensor, one or more second magnetic field sensors and an amplifier and all magnetic field sensors are connected in series so that the respective output signals can be added up to a common input signal of the amplifier.

Abstract: Methods and apparatuses are provided, in which a magnetic field is measured using a coil in a first operating mode and a magnetic field is generated using the coil in a second operating mode in order to test a further magnetic field sensor.

Abstract: Systems and methods are provided for determining a position of a magnet. The systems and methods utilize a first sensor located at a first sensor position and arranged to measure at least two components of a magnetic field produced by the magnet, a second sensor located at a second sensor position and arranged to measure at least two components of the magnetic field produced by the magnet, and processing circuitry operatively connected to the first and second sensors to receive signals derived from signals outputted by the first and second sensors. A field angle is calculated from a first differential field of a first field dimension and a second differential field of a second field dimension orthogonal to the first field dimension. The first and second differential fields are calculated based on signals outputted by the first and second sensors.

Abstract: The semiconductor device includes a magnetic switch provided to a semiconductor substrate. The magnetic switch includes: a horizontal Hall element including first electrodes and second electrodes arranged at positions perpendicular to the first electrodes; a switch circuit configured to select a drive current direction of the Hall element from four directions; an SH comparator configured to alternately perform a first operation for sampling a signal transmitted from the Hall element and a second operation for sending a signal which is based on a result of comparing a value of the sampled signal and a reference value; a latch circuit configured to hold this sent signal and send the held signal as a latch output signal; and a control circuit configured to select the drive current direction in each of a period for the first operation and a period for the second operation based on the latch output signal.

Abstract: A current sensor includes a conductor, and first and second magnetic sensing elements. The first magnetic sensing element is positioned such that the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the first conductor portion is opposite in polarity to the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the third conductor portion. The second magnetic sensing element is positioned such that the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the second conductor portion is opposite in polarity to the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the third conductor portion.

Abstract: An electronic circuit can have a first plurality of vertical Hall elements and a second plurality of vertical Hall elements all disposed on a substrate having a plurality of crystal unit cells, wherein the first plurality of vertical Hall elements have longitudinal axes disposed within five degrees of parallel to an edge of the crystal unit cells, and wherein the second plurality of vertical Hall elements have longitudinal axes disposed between eighty-five and ninety-five degrees relative to the longitudinal axes of the first plurality of vertical Hall elements.

Abstract: A sensor cross-talk compensation system includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a vertical Hall sensor element disposed in the semiconductor substrate, the vertical Hall sensor element is configured to generate a sensor signal in response to a magnetic field impinging thereon; and an asymmetry detector configured to detect an asymmetric characteristic of the vertical Hall sensor element. The asymmetry detector includes a detector main region that vertically extends into the semiconductor substrate from the first main surface towards the second main surface and is of a conductivity type having a first doping concentration; and at least three detector contacts disposed in the detector main region at the first main surface, the at least three detector contacts are ohmic contacts of the conductivity type having a second doping concentration that is higher than the first doping concentration.

Abstract: A semiconductor device includes a vertical Hall element provided in a first region of a semiconductor substrate, and having the first to the third electrodes arranged side by side in order along a first straight line; a circuit provided in a second region of the semiconductor substrate different from the first region, and having a heat source; and a second straight line intersecting orthogonally a current path for a Hall element drive current which flows between the first electrode and the third electrode. The second line passes a center of the vertical Hall element, and a center point of a region which reaches the highest temperature in the circuit during an operation of the vertical Hall element lies on the second straight line.

Abstract: A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Abstract: A method for detecting an error in a bridge sensor which is adapted for measuring a physical parameter. The method comprises biasing a first contact pair of the bridge sensor at least two times in a first direction and at least one time in a second direction opposite to the first direction; while biasing the first contact pair, measuring an output signal on a different contact pair of the bridge sensor, thus obtaining at least three output measurements which are representative for the physical parameter and which are separated by time intervals; combining the output measurements to obtain an output value which is indicative for an error in the bridge sensor, wherein the output measurements which are combined are only those output measurements which are measured when biasing the first contact pair.

Abstract: A power control circuit comprising a power supply and a load, the load being synthesized from an impedance synthesizer comprising two-terminal impedance elements connected in series and grouped in impedance modules. The impedance elements in each impedance module are of equal value, while those between the modules bear ratios uniquely defined according to the numbers of impedance elements in the impedance modules. A number of switches associated with said impedance elements short out a selected number of the impedance elements under the control of a first analog signal which may be preprocessed by an analytic function. The analog signal is converted to digital signals by an analog-to-digital converter, then level shifted to control the switches associated with the impedance elements, whereby the amount of power delivered to the load is controllable by the first analog signal.

Abstract: A surgical instrument is disclosed. The instrument includes a handle portion, a body portion extending distally from the handle portion and defining a first longitudinal axis and an articulating tool assembly defining a second longitudinal axis and having a proximal end. The articulating tool assembly is disposed at a distal end of the body portion and is movable from a first position in which the second longitudinal axis is substantially aligned with the first longitudinal axis to at least a second position in which the second longitudinal axis is disposed at an angle with respect to the first longitudinal axis. The instrument also includes an articulation mechanism configured to articulate the articulating tool assembly, the articulation mechanism including an articulation sensor assembly configured to transmit a sensor signal to a microcontroller which is configured to determine an articulation angle of the articulation assembly.

Abstract: A Hall sensor has a Hall sensor element, which has multiple connection points spaced apart from one another. A supply source serves for feeding an exciter current into the Hall sensor element and is connected to a first and a second connection point of the Hall sensor element. The Hall sensor has a first and a second comparison device. The first comparison device has a first input connected to a third connection point of the Hall sensor element, a second input connected to a reference signal generator for an upper reference value signal, and an output for a first comparison signal. The second comparison device has a third input connected to the third connection point, a fourth input connected to a reference signal generator for a lower reference value signal, and an output for a second comparison signal. The outputs are connected to an evaluation device for generating an error signal as a function of the first and second comparison signal.

Abstract: An integrated Hall sensor device for measuring a magnetic field is provided. The integrated Hall sensor device includes: a semiconductor chip; a first Hall sensor for generating a first magnetic field measurement signal dependent on a first component; a second Hall sensor for generating a second magnetic field measurement signal dependent on a second component of the magnetic field; a first stress sensor for generating a shear stress measurement signal dependent on mechanical stresses in the semiconductor chip; and an evaluation device for determining one or more properties of the magnetic field depending on the first magnetic field measurement signal, the second magnetic field measurement signal. and the first shear stress measurement signal.

Abstract: Methods and apparatus for an orientation insensitive speed sensor. Magnetic field sensing elements can be located on a circle, for example, to generate first and second channel signals which can be combined to generate an output signal. The location of the magnetic field sensing elements reduces the effects of stray fields. Embodiments can include true power own state processing to determine target position during start up.

Abstract: An electrical converter assembly includes a sensing device coupled to one or more wires of a towing vehicle. The sensing device is configured to detect the current flow in the one or more wires and generate a signal in response to the current flow. The converter assembly further includes an electrical component in communication with the sensing device. The electrical component may generate a signal to a towed vehicle in response to the current flow detected by the sensing device. The sensing device may be a non-invasive sensing device. The non-invasive sensing device may detect current flow in the one or more wires of the towing vehicle without direct contact with the conducting element of the wires.

Abstract: Methods and apparatus for a magnetic field sensor having dynamic offset compensation that determines offset voltages for a number of phases each having a bias current across a magnetic field sensing element in a different direction. Pairs of the determined offset voltages for the phases are combined and one of the combined pairs of offset voltages is selected based on a criteria, such as lowest voltage level.

Abstract: A semiconductor device includes first and second Hall-effect sensors. Each sensor has first and third opposite terminals and second and fourth opposite terminals. A control circuit is configured to direct a current through the first and second sensors and to measure a corresponding Hall voltage of the first and second sensors. Directing includes applying a first source voltage in a first direction between the first and third terminals of the first sensor and applying a second source voltage in a second direction between the first and third terminals of the second sensor. A third source voltage is applied in a third direction between the second and fourth terminals of the first sensor, and a fourth source voltage is applied in a fourth direction between the second and fourth terminals of the second sensor. The third direction is rotated clockwise from the first direction and the fourth direction rotated counter-clockwise from the second direction.

Abstract: A method for sensing travel by a travel-sensing arrangement for a brake system, wherein the travel-sensing arrangement has a first magnetic angle sensor, and the method includes determining a first field strength in a first direction and determining a second field strength in a second direction by the first angle sensor, wherein the travel-sensing arrangement has a second magnetic angle sensor which is arranged at a predetermined distance from the first angle sensor, and the method further includes determining a first field strength in a first direction and determining a second field strength in a second direction by the second angle sensor. A travel-sensing arrangement, to a brake system having a travel-sensing arrangement, to a motor-vehicle and to a use of the travel-sensing arrangement and the method in a brake system.

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

Abstract: In a current detection apparatus, one or more first plate portions, one or more second plate portions, and one or more third plate portions of one or more magnetic shields are opposed to side surfaces of the one or more protrusions. The one or more protrusions, the one or more magnetic field detection elements, and one or more conductive members are respectively surrounded by the one or more magnetic shields, respectively. Consequently, the current detection apparatus is downsized and has high current detection accuracy.

Abstract: Provided is a magnetic sensor circuit in which increase of a delay time period is suppressed to be small without reducing a noise suppressing effect, in a case where there are multiple magnetic field detection axes. A magnetic sensor circuit is configured to subject detection signals obtained from multiple magnetic-field detection axes to time division processing, and includes a magnetic detector including at least two magnetic sensors, a switching circuit selecting a magnetic sensor represented by a selection signal to transmit the detection signal, a comparator, a control circuit, and output terminals. The control circuit supplies the selection signal to the switching circuit, and determines that the magnetic field is detected in a case where the number of times that a signal level of the signal supplied from the switching circuit exceeds a reference level reaches the number of set times that is set to a plurality of times.

Abstract: A circuit for biasing and reading out a bridge sensor structure comprises at least two pairs of connection terminals. The circuit comprises an excitation signal generator for generating an excitation signal for biasing and/or exciting the bridge, in which the excitation signal is provided as a non-constant periodic continuous function of time, and a detection circuit for obtaining the sensor signal from the bridge sensor structure by electrically connecting the detection circuit to any pair of connection terminals while applying the excitation signal to another pair. The circuit comprises a switch unit for switching the electrical excitation signal and for switching the detection circuit. A controller controls the switch unit to switch the first pair from being connected to the excitation signal generator at a time when the generated excitation signal is in a predetermined signal range where the excitation signal value is substantially equal to zero.

Abstract: Transistor devices are provided. In some example implementations, a magnetic field sensor chip is fitted on a load electrode of a transistor chip. In other example implementations, two magnetic field sensors are arranged on a load electrode of a transistor chip in such a way that they measure different effective magnetic fields in the event of current flow through the transistor chip.

Abstract: A Hall probe comprising a Hall effect sensing element. The probe is capable of precisely measuring the strength of a magnetic field in high-voltage and vacuum environments.

Abstract: A vertical Hall effect sensor having three Hall effect regions interconnected in a ring can be operated in a spinning scheme. Each Hall effect region has three contacts: the first Hall effect region includes first, second, and third contacts; the second Hall effect region has fourth, fifth, and sixth contacts, and the third Hall effect region has seventh, eighth, and ninth contacts. Interconnections between the Hall effect regions are provided such that a first terminal is connected to a third contact, a second interconnection is arranged between the second and fourth contacts, a third terminal is connected to the sixth contact, a fourth interconnection is arranged between the fifth and seventh contacts, a fifth terminal is connected to the ninth contact, and a sixth interconnection is arranged between the first and eighth contacts.

Abstract: The present disclosure relates to 3-dimensional Hall sensor devices comprising a Hall sensor element having a Hall effect region implemented in a 3-dimensional shell and comprising at least three terminals. Each terminal is connected to at least one electrical contact of the Hall effect region and each electrical contact is disposed at a different region of the 3-dimensional shell. The present disclosure further discloses spinning current/voltage schemes for offset cancellation in such 3-dimensional Hall sensor devices.

Abstract: A current sensor includes a bus bar, a magnetic core, and a casing. The bus bar includes a plate-shaped portion. The magnetic core surrounds the plate-shaped portion. The casing houses the bus bar and magnetic core. A thickness direction of the magnetic core is along a longitudinal direction of the plate-shaped portion. The casing includes lower and upper casings. The lower casing includes first and second press-fit portions. The first press-fit portion includes a groove portion into which the plate-shaped portion is press-fitted. In a state where the magnetic core is inserted downward into the second press-fit portion, both-side portions of the magnetic core in a width direction are press-fitted and held by the second press-fit portion. The upper casing includes a pressing portion that presses the bus bar and magnetic core downward. The groove portion is recessed downward, and is along a thickness direction of the magnetic core.

Abstract: A sensor circuit comprises a sensor adapted to sense a physical quantity and to produce a sensor output signal. A sensor-offset correction block is arranged to receive a signal indicative of a supply voltage applied to the sensor circuit and to generate a compensation signal based on the signal indicative of the supply voltage and on a quantity indicative of a state of the sensor circuit. A combiner is adapted to combine the sensor output signal with the compensation signal, thereby obtaining a compensated signal.

Abstract: A magnetic angle sensor includes a semiconductor chip that includes: a pair of vertical Hall sensor elements configured to generate vertical Hall sensor signals in response to a magnetic field impinging thereon; a first pair of lateral Hall sensor elements configured to generate first lateral Hall sensor signals in response to the magnetic field impinging thereon; a second pair of lateral Hall sensor elements configured to generate second lateral Hall sensor signals in response to the magnetic field impinging thereon; and a sensor circuit configured to: determine a first angle value corresponding to an orientation of the magnetic field based on the vertical Hall sensor signals, determine a second angle value corresponding to the orientation of the magnetic field based on the first and the second lateral Hall sensor signals, and determine whether the first and the second angle values are within an acceptable tolerance range of each other.

Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.

Abstract: An apparatus for magnetic field detection includes a power supply and a plurality of magnetic field sensitive devices including at least first, second, and third magnetic field sensitive devices. The first to third magnetic field sensitive devices are coupled to each other and to the power supply such that a first supply current path runs through the first magnetic field sensitive device and not through the second magnetic field sensitive device, a second supply current path runs through the second magnetic field sensitive device and not through the first magnetic field sensitive device, and the first and second current paths run through the third magnetic field sensitive device. An internal resistance of the third magnetic field sensitive device is smaller than both an internal resistance of the first magnetic field sensitive device and an internal resistance of the second magnetic field sensitive device.

Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.

Abstract: A torque detection device includes a first magnetic circuit part, a second magnetic circuit part, a circuit board module, and a sensor housing. The first magnetic circuit part is disposed on one side of a multipolar magnet in an axial direction. The second magnetic circuit part is disposed on the other side of the multipolar magnet in the axial direction. The circuit board module includes plural magnetic sensors mounted thereon and facing the magnetic circuit on one end side in a width direction being included in the plane and intersecting the arrangement direction. The sensor housing is coupled to one end side in the arrangement direction of the circuit board module so as to support the circuit board module on the one end side in the arrangement direction of the circuit board module.