Abstract: The invention is a cost effective multisite parallel wafer tester that has an array of stationary wafer test sites; a single mobile wafer handling and alignment carriage that holds a wafer handling robot, a wafer rotation pre-alignment assembly, a wafer alignment assembly, a wafer front opening unified pod (FOUP), and a wafer camera assembly; and a robot that moves the wafer handling and alignment carriage to and from each test site. Each test site contains a wafer probe card assembly and a floating chuck. In use, wafers are loaded from a front opening FOUP into a wafer buffer FOUP from which wafers are retrieved by the wafer handling and alignment assembly.

Abstract: An inspection system includes a plurality of inspection apparatuses, and a data processing apparatus capable of communicating with the plurality of inspection apparatuses. The data processing apparatus includes a storage part storing a model that determines a causal relationship between an apparatus parameter related to setting of the plurality of inspection apparatuses and index data obtained when the plurality of inspection apparatuses are operated, a collection part collecting the apparatus parameter and the index data, a determination part determining whether or not the index data is included in a predetermined allowable range, and a calculation part calculating an adjustment amount for adjusting the apparatus parameter, based on the apparatus parameter and the index data, and the model, when it is determined that the index data is not included in the predetermined allowable range.

Abstract: A space transformer for connecting a signal source and probing a semiconductor wafer and a manufacturing method thereof are provided. The space transformer includes a circuit board, a redistribution structure bonded to the circuit board, and a conductive through via providing a vertical conductive path therebetween. The circuit board includes a wiring structure which includes alternately stacked dielectric layers and patterned wiring layers, and first contact pads of the patterned wiring layers connect the signal source. The redistribution structure is thinner than the circuit board and includes second contact pads for probing the semiconductor wafer. A pitch of adjacent second contact pads is finer than that of adjacent first contact pads. The conductive through via penetrates through the circuit board, and the conductive through via is laterally covered by the dielectric layers and is laterally and physically in contact with the patterned wiring layers.

Abstract: The disclosure relates to the field of display technologies and particularly to a chip, a flexible display panel and a display device. The chip includes a body and a plurality of connection terminals arranged on a surface of the body, where each connection terminal is provided with a stress concentration resisting structure for preventing from producing the stress concentration phenomenon.

Abstract: A rectangular probe of a probe card device includes an upper positioned segment, an upper contacting segment, a deformable segment, a lower positioned segment, and a lower contacting segment. The upper positioned segment includes an offset portion, a first positioned portion extending from the offset portion along a first direction, and a second positioned portion extending from a second direction being parallel to and opposite to the first direction. In a width direction perpendicular to the first direction, a width of the first positioned portion is 25%-95% of a width of the offset portion, and a width of the second positioned portion is 25%-95% of the width of the offset portion. The upper contacting segment extends from the first positioned portion along the first direction. The deformable segment, the lower positioned segment, and the lower contacting segment sequentially extend from the second positioned portion along the second direction.

Abstract: An electrostatic discharge (ESD) testing structure includes a measurement device in a first die. The ESD testing structure further includes a fuse in a second die. The ESD testing structure further includes a plurality of bonds electrically connecting the first die to the second die, wherein a first bond of the plurality of bonds electrically connects the fuse to the measurement device.

Abstract: A semiconductor apparatus includes a direct access section, an interface section, and a through-via region. The direct access section receives first and second groups of input signals through a direct access pad, and generates first and second groups of control signals based on the first and second groups of input signals. The interface section comprises a plurality of channel circuits suitable for receiving a part or all of the first and second groups of control signals in response to a plurality of channel selection signals. The through-via region electrically couples the plurality of channel circuits and a plurality of stack dies to form a plurality of channels, respectively.

Abstract: A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.

Abstract: A memory device includes a memory die package including a plurality of memory dies, an interface device including an interface circuit, and a memory controller configured to control the interface with control data received from at least one of the plurality of memory dies. The interface device of the memory device is configured to divide and multiplex an IO channel between the memory die package and the memory controller into more than one channel using the control data receive from the at least one of the plurality of memory dies. The interface device for a memory device includes a control input buffer configured to receive an enable signal through a control pad, a first input buffer configured to receive a first data through a first IO pad in response to a first state of the enable signal, and a second input buffer configured to receive a second data through a second IO pad in response to a second state of the enable signal.

Abstract: An arrangement system composed of a plurality of electrical/electronic components particularly of a voltage converter device of a power supply system for use in oil/natural gas production composed of at least one support member that is provided on at least one side with a surrounded accommodating recess, a circuit carrier which is arranged in the accommodating recess and electrically connected to the components, and a holding member fixing the circuit carrier and/or the components in the accommodating recess. An insulating material is arranged at least in part between the circuit carrier and/or components and the support member. Such an arrangement system permits an adequate electrical insulation of the corresponding components and optionally also of the circuit carrier in relation to the support member together with an adequately high heat conduction.

Abstract: A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.

Abstract: A semiconductor device includes a package substrate, an IF chip, and a core chip. The package substrate has: first electrodes aligned and disposed on a first rear surface; second electrodes aligned and disposed in the first direction (Y direction) on a first front surface; and wiring that electrically connects the first electrodes and the second electrodes. The IF chip has third electrodes bonded to the second electrodes. The core chip is connected to the IF chip. In the first direction, the length of the IF chip is more than that of the core chip but equal to or less than that of the package substrate. One of the first electrodes is disposed further toward the outside than a core chip end portion in the first direction. At least one of the second electrodes is disposed further toward the outside than the core chip end portion in the first direction.

Abstract: Apparatuses and methods for measuring an electrical characteristic of a model signal line and providing measurement information based at least in part on the measurement of the electrical characteristic. An example apparatus includes a signal line model including a model signal line configured to model electrical characteristics of a signal line. The apparatus further includes a measurement circuit coupled to the signal line model and configured to measure the electrical characteristic of the model signal line responsive to an input signal provided to the model signal line. The measurement circuit is further configured to provide measurement information based at least in part on the measurement to set a signal applied to the signal line.

Abstract: Disclosed herein is an apparatus for testing switching of a power semiconductor module, including: a power semiconductor module including a plurality of power semiconductor devices corresponding to a plurality of phases to test a switching operation of a corresponding power semiconductor device; a power supply unit supplying power to the power semiconductor module; a relay switching unit including a plurality of relay switch devices that connects or disconnects between the power semiconductor module and the power supply unit according to a relay control signal; and a control unit controlling the relay switching unit to test on/off characteristics of at least one of the plurality of power semiconductor devices individually or simultaneously, By this configuration, the on/off operations of the plurality of power semiconductor devices are tested individually or simultaneously by the control of the plurality of relay switch devices, thereby improving the user convenience and reducing the test time.

Abstract: Package assemblies including a die stack and related methods of use. The package assembly includes a substrate with a first surface, a second surface, and a third surface bordering a through-hole extending from the first surface to the second surface. The assembly further includes a die stack, a conductive layer, and a lid. The die stack includes a chip positioned inside the through-hole in the substrate. A section of the conductive layer is disposed on the third surface of the substrate. A portion of the lid is disposed between the first chip and the section of the conductive layer. The conductive layer is configured to be coupled with power, and the lid is configured to be coupled with ground. The portion of the lid may act as a first plate of a capacitor, and the section of the conductive layer may act as a second plate of the capacitor.

Abstract: An apparatus and method that improve design efficiency when designing an LSI. A selector module generating section inputs IP connection information describing input/output flows of signals between IPs included in an LSI to be designed, analyzes the inputted IP connection information, and generates a selector module of a selector that matches the input/output flows of signals between IPs described in the IP connection information. A macro module generating section generates a macro module in which relationships between the selector and function blocks are indicated, using the selector module generated by the selector module generating section.

Abstract: An integrated circuit (IC) structure can include a first die and a second die. The second die can include a first base unit and a second base unit. Each of the first base unit and the second base unit is self-contained and no signals pass between the first base unit and the second base unit within the second die. The IC structure can include an interposer. The interposer includes a first plurality of inter-die wires coupling the first die to the first base unit, a second plurality of inter-die wires coupling the first die to the second base unit, and a third plurality of inter-die wires coupling the first base unit to the second base unit.

Abstract: In a semiconductor device in which semiconductor chips having a number of signal TSVs are stacked, a huge amount of man-hours have been required to perform a continuity test for each of the signal TSVs. According to the present invention, no continuity test is performed directly on signal TSVs. Dummy bumps are arranged in addition to signal TSVs. The dummy bumps of the semiconductor chips are connected through a conduction path that can pass the dummy bumps between the semiconductor chips with one stroke when the semiconductor chips are stacked. A continuity test of the conduction path allows a bonding defect on bonded surfaces of two of the stacked semiconductor chips to be measured and detected.

Abstract: Disclosed herein is a device that includes: external terminals; a first chip including a first control circuit that generates a first control signal; and a second chip stacked with the first chip. The second chip includes: a first test terminal supplied with a first test signal and being free from connecting to any one of the external terminals; a second test terminal supplied with the first test signal and coupled to one of the external terminals without connecting to any one of control circuits of the first chip; a first normal terminal supplied with the first control signal and coupled to another of the external terminals with an intervention of the first control circuit of the first chip; and a first selection circuit including first input node coupled in common to the first and second test terminals and the second input node coupled to the first normal terminal.

Abstract: Methods, apparatus, and computer program products for evaluating current transients measured during an electrical stress evaluation of a dielectric layer in a semiconductor device. Measured current transients are fit to an equation representing a time dependence for stress induced leakage currents. The measured current transients are corrected based upon stress currents computed from the equation to define corrected current transients.

Abstract: The present invention relates to the chip testing field. A method for testing a plurality of transistors in a target chip is provided, characterized by automatically selecting a plurality of pre-defined transistors on the target chip and adding a connection layer to the key layers of each transistor such that the transistor to be tested is connected with and measured by an outside tester. Through automatic generation of the test structures and automatic wiring, the present invention greatly shortens the design cycle of test chips for target transistor testing, and greatly reduces the error probability in the process of designing test chips for target transistor testing, and improves the testing relevancy.

Abstract: Circuits for performing four terminal measurement point (IMP) testing of devices under test (DUT) is provided. The DUT and the circuit is to be defined on a semiconductor chip. The circuit includes a DUT having a first terminal and a second terminal, where the first terminal of the DUT is connectable to a first terminal measurement point and a third terminal measurement point, and the second terminal of the DUT is connectable to a second terminal measurement point and a fourth terminal measurement point. A first transistor is provided to select access to the first terminal measurement point, a second transistor is provided to select access to the third terminal measurement point, a third transistor is provided to select access to the second terminal measurement point; and a fourth transistor is provided to select access to the fourth terminal measurement point.

Abstract: An integrated circuit (IC) structure can include an interposer including a plurality of inter-die wires and a first die coupled to the interposer. The first die can include a first output including a first flip-flop coupled to a first inter-die wire of the plurality of inter-die wires and a first input including a second flip-flop coupled to a second inter-die wire of the plurality of inter-die wires. The IC structure can include a second die coupled to the interposer. The second die can be configured with a first circuit design forming circuitry that couples the first inter-die wire to the second inter-die wire.

Abstract: A system and method is disclosed for adaptively adjusting a driving strength of a signal between a first and second chip in a 3D architecture/stack. This may be used to adaptively calibrate a chip in a 3D architecture/stack. The system may include a transmission circuit on one chip and a receiver circuit on another chip. Alternatively, the system may include a transmission and receiver circuit on just one chip.

Abstract: Provided are a tester configured to test a semiconductor device and a test system including the same. The tester may include at least one contact unit and at least one memory controller. The contact unit is in contact with the semiconductor device. The memory controller is connected to the contact unit. The memory controller controls data input/output (I/O) operations of the semiconductor device and tests the semiconductor device.

Abstract: A semiconductor device that can be manufactured with reduced costs and that includes a first connecting terminal, a second connecting terminal, a third connecting terminal, and a first circuit module configured to operate in response a first signal and a second signal. When a mode signal is in a first state, the first circuit module receives the first signal from the first connecting terminal and receives the second signal from the second connecting terminal. Otherwise, when the mode signal is in a second state, the first circuit module receives the first signal from the first connecting terminal and receives the second signal from the third connecting terminal. A memory module including at least one such memory device may also be provided.

Abstract: A semiconductor apparatus includes: a semiconductor chip, wherein a conductive layer is formed at one side of the semiconductor chip and one or more of probe pads are formed at the other side thereof; a plurality of through-silicon vias (TSVs), wherein one side of each of the plurality of TSVs is coupled to the conductive layer and the other side of one or more of the plurality of TSVs is coupled to the probe pad; a plurality of latch units each configured to be assigned to the plurality of corresponding TSVs and store a test signal, wherein the test signal is inputted via the probe pad and is transferred via the plurality of corresponding TSVs to the plurality of assigned latch units, respectively; and a signal combination unit configured to combine a plurality of signals stored in the plurality of latch units to output the result as an error detection signal.

Abstract: To provide a semiconductor device including an interface chip and a core chip and a measurement-target signal line and a reference signal line each including a through silicon via provided in the core chip and electrically connecting the interface chip and the core chip. The interface chip outputs a test clock generated by a first signal generation circuit to the core chip. The core chip includes a second signal generation circuit that generates a predetermined measurement signal from the test clock, and outputs the predetermined measurement signal to the measurement-target signal line and the reference signal line in a simultaneous manner. Further, the interface chip detects a phase difference of a plurality of predetermined measurement signals input via the measurement-target signal line and the reference signal line by an operational amplifier, and outputs a test result to a determination circuit.

Abstract: A semiconductor device includes a monitor including a first element coupled between a first power supply line and a second power supply line, and a load for increasing a load value between the first element and the first power supply line or the second power supply line, and a determination unit which determines an operating state of the first element based on an output of the monitor.

Abstract: A method and system for testing one or more semiconductor structures, for example, chips or wafers, in a three-dimensional stack. The method and system includes controlling a logic signal of a first circuit in a first chip or wafer connected to a supply voltage to indicate a first state during pre-assembly testing of the first chip or wafer. The method and system further includes controlling the logic signal to indicate a second state when the first circuit is connected to a second circuit of a second chip or wafer resulting in a combined circuit. The combined circuit is in a three-dimensional chip or wafer stack during post-assembly testing of the three-dimensional chip or wafer stack.

Abstract: A semiconductor device includes; a first pad that receives an external voltage during a test, a second pad coupled to an external impedance during the test, a voltage-current converter coupled to the first pad and the second pad and generating a bias current substantially in response to only the external voltage and the external impedance, and an internal circuit responsive to a test current during the test, such that the level of the test current is defined by the level of the bias current.

Abstract: Disclosed is a method for testing multi-chip stacked packages. Initially, one or more substrate-less chip cubes are provided, each consisting of a plurality of chips such as chips stacked together having vertically connected with TSV's where there is a stacked gap between two adjacent chips. Next, the substrate-less chip cubes are adhered onto an adhesive tape where the adhesive tape is attached inside an opening of a tape carrier. Then, a filling encapsulant is formed on the adhesive tape to completely fill the chip stacked gaps. Next, the tape carrier is fixed on a wafer testing carrier in a manner to allow the substrate-less chip cubes to be loaded into a wafer tester without releasing from the adhesive tape. Accordingly, the probers of the wafer tester can be utilized to probe testing electrodes of the substrate-less chip cubes so that it is easy to integrate this testing method in TSV fabrication processes.

Abstract: A semiconductor apparatus includes a chip containing a plurality of through-vias, a test voltage input unit, and a test result reception unit. The test voltage input unit applies a test voltage to one of the plurality of through-vias. The test result reception unit receives an output signal outputted from one or more of the plurality of through-vias.

Abstract: The present disclosure provides a semiconductor device including: a semiconductor identifier holding portion configured to hold a semiconductor identifier for identifying a semiconductor device; and a control portion configured such that upon elapse of a predetermined time period following receipt of an externally input instruction to hold the semiconductor identifier, the control portion issues an instruction to the semiconductor device immediately downstream of the semiconductor device to hold a semiconductor identifier of the immediately downstream semiconductor device and that during the time period between the point in time at which the externally input instruction is received and the point in time at which the instruction is issued to the immediately downstream semiconductor device to hold the semiconductor identifier thereof, the control portion causes the semiconductor identifier holding portion to hold the externally input identifier.

Abstract: Disclosed herein is a method for testing a semiconductor device, the method includes: preparing a first semiconductor chip having a first bump electrode and a first driver circuit that drives the first bump electrode, and a second semiconductor chip having a second bump electrode and a second driver circuit that drives the second bump electrode; staking the first and second semiconductor chips so that the first bump electrode and the second bump electrode are electrically connected to each other to form a current path including the first and second bump electrodes; and driving, in a test mode, the current path to a first potential by the first driver circuit while driving the current path to a second potential different from the first potential by the second driver circuit.

Abstract: A semiconductor device is designed to facilitate analyzing a position and a cause of the failure of an integrated circuit adopting a polyphase clock. To this end, the semiconductor device is provided with an error detecting unit that detects that a problem of the operation occurs in the integrated circuit, a clock state holding unit that holds the information of phases in a predetermined term of a two- or more-phase clock and an output unit that outputs the information of the phases in the predetermined term of the two- or more-phase clock when the error detecting unit detects that the problem of the operation occurs in the integrated circuit.

Abstract: A method for fabricating a stackable integrated circuit layer and a device made from the method are disclosed. A stud bump is defined on the contact pad of an integrated circuit die and the stud-bumped die encapsulated in a potting material to define a potted assembly. A predetermined portion of the potting material is removed whereby a portion of the stud bump is exposed. One or more electrically conductive traces are defined on the layer surface and in electrical connection with the stud bump to reroute the integrated circuit contacts to predetermined locations on the layer to provide a stackable neolayer.

Abstract: A method and device for testing through-substrate vias (TSVs) in a 3D chip stack are disclosed. In one aspect, the 3D chip stack includes at least a first die having a first electrical circuit and a second die having a second electrical circuit. The first die further includes at least one first TSV for providing electrical connection between the first electrical circuit and the second electrical circuit. The first die further includes test circuitry and at least one second TSV electrically connected between the first TSV and the test circuitry. The electrical connection between the first TSV and the second TSV is made outside the second die. In one aspect, this allows testing the first TSV in the first die even if the second die is not provided with dedicated test circuitry.

Abstract: A method of integrated circuit (IC) disposition includes the steps of determining one or more disposition criteria based at least in part on statistical timing of a given IC design; and determining whether a given IC according to the given IC design satisfies the one or more disposition criteria based at least in part on one or more measurements of at least one test structure.

Abstract: A device and method are disclosed wherein a receiver signal line within an integrated circuit may be selected for probing. In one embodiment, a plurality of signal pads and a test pad are provided on an external surface of an integrated circuit chip. A plurality of signal lines extends through the integrated circuit chip to the signal pads. A multiplexer on the integrated circuit chip is configured for individually selecting any of the signal lines. An amplifier on the integrated circuit chip amplifies a selected signal and communicates the amplified signal to an externally-accessible test pad to be probed.

Abstract: A method of integrated circuit (IC) disposition includes the steps of determining one or more disposition criteria based at least in part on statistical timing of a given IC design; and determining whether a given IC according to the given IC design satisfies the one or more disposition criteria based at least in part on one or more measurements of at least one test structure.

Abstract: A circuit for recording a magnitude of an ESD event during semiconductor assembly includes a voltage divider connected between an input and a ground. The circuit also includes a measurement block having a recorder device. Each measurement block receives current from a segment of the voltage divider. The magnitude of the ESD event is determined based upon a read-out of the measurement devices after the ESD event. The recorder device may be a capacitor that would be damaged during the ESD event. During the ESD event the capacitor may be damaged. Reading out the recorder device determines if the magnitude of the ESD event exceeded a threshold magnitude that damages the capacitor.

Abstract: A semiconductor package test apparatus having a test head and a test handler is provided. The semiconductor package test apparatus may include an insert in which a plurality of semiconductor packages are stacked and received in an offset fashion. Further, the semiconductor package test apparatus may include a plurality of sockets located adjacent to the insert and each of the inserts may have a plurality of socket pins. The sockets have different surface levels and are aligned with the semiconductor packages.

Abstract: An electronic module for level measurements, pressure measurements or density measurements is disclosed. In the module, a safety-relevant function is transferred into an area that is categorized as safety-uncritical. In order to prevent malfunctions, a diagnostic function is performed in the safety-critical area of the electronic module in order to check the transferred function. This diagnostic function is also checked with respect to its effectiveness during the safety-oriented operation. Suitable measures can be initiated in case an error is detected.

Abstract: A stacked semiconductor device includes a first and a second semiconductor device. A first major surface of each of the first and second devices which includes the active circuitry directly face each other. The first major surface of each of the devices includes a beveled edge on at least one edge, and a probe pad which extends onto the beveled edge. A first opening is located between the beveled edges of the first and second devices on a vertical side of the stacked semiconductor device.

Abstract: A wafer is disclosed that includes a plurality of pipeline interconnected integrated circuit dies that form a plurality of pipelines. A plurality of dies in each pipeline is connected to receive scanned output test data from a neighboring die in a pipeline. A wafer level test access mechanism (TAM) transceiver circuitry, located outside the plurality of pipeline interconnected IC dies, is connected in common to each of the pipelines to provide input test data in a parallel fashion to the plurality of pipelines. The wafer level test access mechanism transceiver circuitry also provides output test results from each of the pipelines for evaluation by a computerized test system. In one embodiment, the wafer level test access mechanism transceiver circuitry is wireless so that it wirelessly receives test data to be passed through the multiple pipelines on a wafer and also includes wireless transmit circuitry to transmit test results from each of the pipelines.

Abstract: A semiconductor apparatus includes a semiconductor chip through-line for transmitting signals commonly to a plurality of stacked semiconductor chips. The apparatus includes a first test pulse signal transmission unit configured to transmit a first test pulse signal to a first end of the semiconductor chip through-line when a power-up operation is performed; a second test pulse signal transmission unit configured to transmit a second test pulse signal to a second end of the semiconductor chip through-line after the first test pulse signal is transmitted; a first signal reception unit coupled to the first end of the semiconductor chip through-line, and configured to receive signals transmitted from the first and second test pulse signal transmission units; and a second signal reception unit coupled to the second end of the semiconductor chip through-line, and configured to receive the signals transmitted by the first and second test pulse signal transmission units.

Abstract: A system including an interface and a plurality of solder joint testing modules. The interface is configured to receive test configuration data to configure each of a plurality of integrated system test (IST) modules. Each of the plurality of solder joint testing modules is configured to, based on the test configuration data, i) apply a pulse having a predetermined amplitude and width to a solder joint associated with a respective one of the plurality of IST modules, ii) monitor a resultant waveform that is generated in response to the pulse, and iii) determine an integrity of the solder joint in response to the resultant waveform. Each of the plurality of solder joint testing modules and the respective ones of the plurality of IST modules are located on a same system on chip (SOC).

Abstract: In a method for testing functionality of a field device or a field device for sending a control signal to a final controlling device of an industrial processing plant, the final controlling device is operated by a secondary power. With the method, a current/secondary power converter is provided for generating a predetermined secondary power safety control signal to bring the final controlling device into a predetermined safe position. An electronic safety circuit is provided connected to the current/secondary power converter which, depending on an electrical control signal received by the field device, is switched from a passive state into an active state in which the electronic safety circuit causes the current/secondary power converter to output the secondary output power safety control signal. The safety circuit automatically adopts the active state if the electrical control signal falls below or exceeds at least one of a current and a voltage threshold value specific to the safety circuit.

Abstract: A computer system for safety critical sensor variables includes first and second sensors which respectively output first and second sensor variables, a computer, and an independent comparator. The computer calculates an output variable from the first sensor variable by a first function. The computer calculates a comparison variable from the output variable by a second function. The comparison variable and the second sensor variable are applied to the input of the comparator. The second sensor variable is not an input variable of the computer and differs from the first sensor variable in terms of its qualitative value. By calculations of the computer and, if appropriate, of the comparator, an expected comparison variable for the second sensor variable is determined from the calculated output variable, and the correspondence of the two variables is checked by the comparator. Specific internal errors of the computer can thereby be discovered.