Abstract: An example apparatus includes: an output terminal, pull-down circuitry coupled to the output terminal, the pull-down circuitry including: a resistor with a first resistor terminal and a second resistor terminal, the first resistor terminal coupled to the output terminal, a capacitor with a first capacitor terminal and a second capacitor terminal, the first capacitor terminal coupled to the output terminal, a first transistor coupled to the second resistor terminal, a second transistor coupled to the first transistor and the second resistor terminal, and a third transistor coupled to the second transistor.

Abstract: A method of forming an integrated circuit structure is provided. The method includes: providing a logic cell structure including a first input node, a second input node, and a pulling network connected to a reference voltage and an output node, wherein the pulling network includes a plurality of transistor segments; determining a delay associated with at least one of the first input node and the second input node; and connecting the plurality of transistor segments to the first input node, the second input node and the output node based at least in part on the determined delay.

Abstract: According to one embodiment, a data transmission device includes a buffer circuit configured to set a voltage level of a data signal to high or low, a power supply line for supplying a power supply voltage to the buffer circuit, a buffer control circuit configured to control a switching operation of the buffer circuit, a current circuit configured to make a dummy current flow to the power supply line, and a current control circuit configured to control the dummy current based on one of the set voltage level and a transmission timing of the data signal.

Abstract: Asynchronous circuits implemented using threshold gate(s) and/or majority gate(s) (or minority gate(s)) are described. The new class of asynchronous circuits can operate at lower power supply levels (e.g., less than 1V on advanced technology nodes) because stack of devices between a supply node and ground are significantly reduced compared to traditional asynchronous circuits. The asynchronous circuits here result in area reduction (e.g., 3× reduction compared to traditional asynchronous circuits) and provide higher throughput/mm2 (e.g., 2× higher throughput compared to traditional asynchronous circuits). The threshold gate(s), majority/minority gate(s) can be implemented using capacitive input circuits. The capacitors can have linear dielectric or non-linear polar material as dielectric.

Abstract: Asynchronous circuits implemented using threshold gate(s) and/or majority gate(s) (or minority gate(s)) are described. The new class of asynchronous circuits can operate at lower power supply levels (e.g., less than 1V on advanced technology nodes) because stack of devices between a supply node and ground are significantly reduced compared to traditional asynchronous circuits. The asynchronous circuits here result in area reduction (e.g., 3× reduction compared to traditional asynchronous circuits) and provide higher throughput/mm2 (e.g., 2× higher throughput compared to traditional asynchronous circuits). The threshold gate(s), majority/minority gate(s) can be implemented using capacitive input circuits. The capacitors can have linear dielectric or non-linear polar material as dielectric.

Abstract: Devices, systems, and methods for limiting a slew rate of a driven device. In some embodiments, the device for limiting a slew rate of the driven device includes one or more slew rate limiting field-effect transistors (FETS) connected between a first circuit node and a node of the driven device, and a first control circuit. In some embodiments, the one or more first slew rate limiting FETs and the first control circuit are configured to set a rate at which the driven device is charged or discharged. In some embodiments, the first control circuit is within a voltage divider and the current flowing through the voltage divider is proportionally mirrored to the one or more first slew rate limiting FETs wherein the current mirror ratio is selected to ensure that a rate at which a capacitance of the driven device changes over time is below a specified limit.

Abstract: There is presented a driver and a corresponding method for driving a p-type power switch. The driver includes a capacitor coupled to a control terminal of the power switch. The driver is configured to apply a control voltage to the control terminal and to connect the control terminal to ground to reduce the control voltage down to a target value to switch the power switch on. When identifying that the control voltage has reached the target value, the driver disconnects the control terminal from ground. The driver may be used in various circuits including switching power converters, audio amplifiers and charge-pump circuits.

Abstract: Digital to analog converter generates an analog output corresponding to a digital input by controlling DAC cells using bits of the digital input. The DAC cells individually make a contribution to the analog output. Due to process, voltage, and temperature variations, the DAC cells may have duty cycle error or mismatches. To compensate for the duty cycle error of a DAC cell, a small amount of charge is injected into a low-impedance node of a DAC cell when the data signal driving the DAC cell transitions, or changes state. The small amount of charge is generated using a capacitive T-network, and the polarity of the charge injected is opposite of the error charge caused by duty cycle error. The opposite amount of charge thus compensates or cancels out the duty cycle error, and duty cycle error present at the output of the DAC cell is reduced.

Abstract: Disclosed herein is an apparatus that includes a data serializer including a plurality of first buffer circuits configured to receive a plurality of data, respectively, and a second buffer circuit configured to serialize the plurality of data provided from the plurality of first buffer circuits. At least one of the plurality of first buffer circuits and the second buffer circuit includes: a first circuit configured to drive a first signal node to one of first and second logic levels based on an input signal, the first circuit including a first adjustment circuit configured to adjust a driving capability of the first circuit when the first circuit drives the first signal node to the first logic level; and a second circuit configured to drive the first signal node to other of the first and second logic levels.

Abstract: Various implementations described herein are related to a device having an output pad that is configured to supply an output pad voltage. The device may include tracking circuitry that is configured to receive a first voltage, receive a second voltage that is different than the first voltage, receive the output pad voltage as a feedback voltage, and provide a first tracking voltage and a second tracking voltage based on the first voltage, the second voltage and the feedback voltage. The device may include output circuitry that is configured to receive the first tracking voltage and the second tracking voltage from the tracking circuitry and provide the output pad voltage to the output pad based on the first tracking voltage and the second tracking voltage.

Abstract: A gate-driving circuit for turning on and off a switch device including a gate terminal coupled to a driving node, a drain terminal coupled to a power node, and a source terminal is provided. The gate-driving circuit includes a driving switch and a voltage control circuit. The driving switch includes a gate terminal coupled to a control node, a drain terminal coupled to the power node, and a source terminal coupled to the driving node. The voltage control circuit is coupled between the control node and the driving node. When a positive pulse is generated at the control node, the voltage control circuit provides the positive pulse to the driving node with a time delay.

Abstract: Analog Front End (AFE) driver or transmitter is used for ESD protection of an input-output (IO) pin, thus reducing ESD diode count and subsequently lowering the pad capacitance to achieve high performance in IO circuits like double data rate (DDR) IO, PCI Express (Peripheral Component Interconnect Express), etc. The channel of active devices that constitute AFE driver are used to connect an IO pad to discharge the ESD current to ground, thus providing an alternative path to ESD current and subsequently reducing the ESD diode count. An additional p-type device (Driver Path Enabler (DPE)) is coupled between the IO pad and a gate terminal of the AFE driver. This additional p-type device triggers the channel of the AFE driver. This p-type device is controlled by an RC based structure which cuts the p-type device off during regular operations when power is ramped-up.

Abstract: Methods, systems, and devices are described for adjusting parameters of channel drivers based on temperature when a calibration component is unavailable. A memory device may determine whether a calibration component is available for use by the memory device. If not, the memory device may select an impedance setting for the driver that is based on an operating temperature of the memory device. A device or system may identify a temperature of a memory device, identify that a calibration component is unavailable to adjust a parameter of a driver of a data channel, select a value of the parameter based on the temperature and on identifying that the calibration component is unavailable, adjust the parameter of the driver of the data channel to the selected value, and transmit, by the driver operating using the selected value of the parameter, a signal over the channel.

Abstract: A data transmission circuit which is improved to be capable of supporting a data transmission mode appropriate for an interface or an application depending on the selection of an option. The data transmission circuit includes a pre-driver configured to output a first differential driving signal, a second differential driving signal and pre-emphasis control signals by using a first differential data signal, a second differential data signal and option signals; a main driver configured to output a first differential transmission signal and a second differential transmission signal by using the first differential driving signal and the second differential driving signal; and a pre-emphasis driver configured to perform pre-emphasis on the first differential transmission signal and the second differential transmission signal to different amplification degrees in a first mode and a second mode by the pre-emphasis control signals.

Abstract: Examples described herein can be used to calibrate resistances provided by pull-up and pull-down circuits in an output driver circuit. A first reference voltage can be determined and applied to set a resistance level of a pull-up circuit to a desired level. A code for activating one or more transistor in the pull-up circuit can be determined against the first reference voltage. For a pull-down circuit, a second reference voltage can be set a resistance level of the pull-down circuit to a desired level. The resistance level of the pull-down circuit can be set to equal to the resistance level of the pull-up circuit. A second code can be set for activating one or more transistor in the pull-down circuit. The first and second reference voltages can be represented by index values. The code and second code can be stored for use by the pull-up circuit and pull-down circuit. Re-calibration of the pull-up and pull-down circuits can be performed to determine codes using the first and second reference voltages.

Abstract: An adaptive gate driver for a driving a power MOSFET to switch is disclosed. The adaptive gate driver includes a load sense circuit to sense a current through the power MOSFET. A controller coupled to the load sense circuit compares the sensed current to a threshold to determine if the load on the power MOSFET is a normal load or a heavy load. Based on the comparison, the controller controls the gate driver to drive the power MOSFET with a first strength level when a normal load determined and at second strength level when a heavy load is determined. The driving strength in the heavy-load condition is lower than the normal-load condition and by lowering the driving strength of the gate driver during the heavy-load condition a voltage across the power MOSFET may be prevented from exceeding a threshold related to a breakdown condition during a switching period.

Abstract: Circuits and methods for preventing glitch in a circuit are disclosed. In one example, a circuit coupled to an input/output pad is disclosed. The circuit includes: a first level shifter, a second level shifter, and a control logic circuit. The first level shifter is configured for generating a data signal. The second level shifter is configured for generating an output enable signal. The first and second level shifters are controlled by first and second power-on-control signals, respectively. The control logic circuit is coupled to the first level shifter and the second level shifter.

Abstract: An electronic impedance measurement device: a branch, called measurement branch, including an impedance to be measured (Zm), and; at least one branch, called reference branch, including an impedance (Zr), called reference impedance; electronics, called detection electronics, configured to provide an error signal (Vs) dependent on an algebraic sum of a current (Ir) flowing in the at least one reference branch (104) and of a current (Im) flowing in the measurement branch; and at least one adjustment structure, changing the current (Ir) in at least one of said reference branches in a manner inversely proportional to a control variable (k).

Abstract: A switching circuit can help reduce electrical feedback ringing at a gate terminal of a transistor. The switching circuit can include a transistor circuit to switch an electrical signal and a control circuit to provide an actuation signal to the gate terminal of the transistor device. The switching circuit can also include a booster circuit that is disposed between the control circuit and the gate terminal of the transistor device. The booster circuit can be configured to detect a signal from the control circuit to turn off the transistor device and, responsive to the detected signal, drive a current into the gate terminal of the transistor device for a specified span of time before the transistor device turns off.

Abstract: A solid state image sensor of the present disclosure includes: a first semiconductor substrate provided with at least a pixel array unit in which pixels that perform photoelectric conversion are arranged in a matrix form; and a second semiconductor substrate provided with at least a control circuit unit that drives the pixels. The first semiconductor substrate and the second semiconductor substrate are stacked, with first surfaces on which wiring layers are formed facing each other, the pixel array unit is composed of a plurality of divided array units, the control circuit unit is provided corresponding to each of the plurality of divided array units, and electrical connection is established in each of the divided array units, through an electrode located on each of the first surfaces of the first semiconductor substrate and the second semiconductor substrate, between the pixel array unit and the control circuit unit.

Abstract: A transmitter may include an emphasis circuit suitable for generating a first pull-down driving signal in response to first data and delayed second data, and generating a first pull-up driving signal in response to second data and delayed first data, wherein the first and second data are a differential pair; a phase skew compensation circuit suitable for compensating for a phase skew between the first pull-up driving signal and the first pull-down driving signal to generate a second pull-up driving signal and a second pull-down driving signal; a pull-up driver suitable for pull-up driving an output node in response to the second pull-up driving signal; and a pull-down driver suitable for pull-down driving the output node in response to the second pull-down driving signal.

Abstract: A capacitance-sensing circuit may include a channel input associated with measuring a capacitance of a unit cell of a capacitive sense array. The capacitance-sensing circuit may also include a capacitive hardware baseliner that is coupled to the channel input. The capacitive hardware baseliner includes a programmable baseline resistor, and a buffer with an input coupled to the programmable baseline resistor and an output coupled to the channel input. The capacitive hardware baseliner generates a baseline current based on a time constant of the channel input associated with the measuring of the capacitance of the element of the capacitive sense array using the programmable baseline resistor. The capacitive hardware baseliner provides the baseline current at the channel input to provide a charge for a sense capacitor. A change in the charge of the sense capacitor is provided by the baseline current indicating a presence of a touch object proximate to the element.

Abstract: An electronic device includes a battery for supplying electrical power for operation of the electronic device, an acquisition unit configured to connect to a measuring instrument and acquire measurement data from the measuring instrument, a temperature sensor configured to measure a reference temperature, and a controller configured to correct the measurement data on the basis of the reference temperature. The controller acquires the terminal voltage of the battery and sets a lifespan voltage on the basis of the reference temperature. The lifespan voltage is used as a standard for outputting an alarm encouraging replacement of the battery before the terminal voltage of the battery falls below the voltage necessary for the electronic device to operate. The controller outputs the alarm when the terminal voltage is less than the lifespan voltage.

Abstract: A voltage regulation circuit includes a voltage regulator that is configured to provide a stable output voltage based on an input voltage; and a control circuit, coupled to the voltage regulator, and configured to provide an injection current to maintain the stable output voltage in response to an enable signal provided at an input of the control circuit transitioning to a predetermined state and cease providing the injection current when the control circuit detects that a voltage level of the output voltage is higher than a pre-defined voltage level.

Abstract: An integrated circuit that may be employed as a smart switch. The integrated circuit includes a first part of a semiconductor switch coupled between a supply node and an output node and configured to provide a first current path in accordance with a first drive signal. The integrated circuit further includes a second part of the semiconductor switch coupled between the supply node and the output node and configured to provide a second current path in accordance with a second drive signal. The integrated circuit includes a drive circuit configured to generate, in response to a switch-on command, the first drive signal and the second drive signal such that the first part of the semiconductor switch and the second part of the semiconductor switch are alternatingly switched on and off. During an overlap period, both the first and the second part of the semiconductor switch are in an on-state.

Abstract: An electronic device may include one or more output buffers each including a pair of final p-channel metal oxide semiconductor (PMOS) and n-channel metal oxide semiconductor (NMOS) transistors, a first pre-buffer to drive the PMOS transistor, and a second pre-buffer to drive the NMOS transistor. Each output buffer receives power from a pre-buffer supply filtering circuit, which may include a supply capacitor for stabilizing supply voltage, a low-pass first pre-buffer supply filter to filter the voltage supplied to the first pre-buffer, and a low-pass second pre-buffer supply filter the voltage supplied to the second pre-buffer.

Abstract: The present invention provides a driving circuit of a switching transistor, the driving circuit capable of suppressing an output voltage from changing sharply. A driver circuit includes a first transistor to a fourth transistor and a pre-driver. The pre-driver (i) provides a first gate signal having a negative edge slope smaller than a positive edge slope to the gate of the first transistor, (ii) provides a second gate signal having a positive edge slope smaller than a negative edge slope to the gate of the second transistor, (iii) provides a third gate signal having a positive edge slope smaller than the positive edge slope of the first gate signal to the gate of the third transistor, and (iv) provides a fourth gate signal having a negative edge slope smaller than the negative edge slope of the second gate signal to the gate of the fourth transistor.

Abstract: An apparatus is described. The apparatus includes a decision feedback equalizer circuit having a summation circuit. The summation circuit has a differential pair that includes first and second transistors coupled to a current source. The current source is to draw a current through the first and second transistors. The decision feedback circuit also includes a circuit to adjust the current to compensate for a change in electron mobility of at least one transistor of the current source.

Abstract: In examples, an integrated circuit package comprises a pin exposed externally to the package; at least one resistor coupled to the pin at a first end of the resistor; a first transistor coupled to the at least one resistor at a second end of the resistor and coupled to a voltage source; a second transistor coupled to the at least one resistor at the second end of the resistor and coupled to a ground connection, the at least one resistor and the first and second transistors couple at a first node, the first and second transistors are of different types; and multiple comparators, each of the multiple comparators coupled to a voltage divider network and to the pin.

Abstract: An apparatus includes: a first inverter configured to receive a first clock signal and output a second clock signal, wherein an input pin, an output pin, a power pin, and a ground pin of the first inverter connect to the first clock signal, the second clock signal, a first source node, and a second source node, respectively; a second inverter configured to receive the second clock signal and output a third clock signal, wherein an input pin, an output pin, a power pin, and a ground pin of the second inverter connect to the second clock signal, the third clock signal, the first source node, and the second source node, respectively; a first resistor connected to a first DC (direct-current) voltage to the first source node; and a second resistor connected to a second DC voltage to the second source node.

Abstract: A low-power transmitter for transmitting digital signals from an integrated chip is described herein. The transmitter includes a voltage-mode transmitter driver comprised of a plurality of driver slices, which includes an up-cell having a first resistor and a first transistor, and a down-cell having a second resistor, a second transistor, and a third transistor. A calibration circuit drives a replica circuit to a desired impedance by adjusting a first gate voltage applied to the first transistor of the replica of the up-cell and adjusting a second gate voltage applied to the third transistor of the replica of the down-cell. The calibrated first gate voltage is applied to the first transistor and to the second transistor of each of the plurality of driver slices and the calibrated second gate voltage is applied to the third transistor of each of the plurality of driver slices.

Abstract: A pixel cell and row select and row driver circuits include two column bias circuits and row driver circuits, one placed at the right and one placed at the left side of the array of pixel cells. The digital control signals for the two sets of bias and row driver circuits enter at the center top or bottom of the array of pixel cells and drive the circuits symmetrically. The combination of two-sided row driver and column bias helps eliminate any signal delay and bias difference between the left and right side of the pixel cell array. More significantly this circuit construction can minimize horizontal shading in the resulting image.

Abstract: A multichip package may include a transmitter die and a receiver mounted on a substrate. The transmitter die may be coupled to the receiver die through die-to-die connections such as microbumps and conductive paths in the substrate. The transmitter die may include flexible transmitter circuitry having transceiver logic and driver circuitry. The driver circuitry may include a high-swing driver and a low-swing driver optionally equalization circuitry. The driver circuitry may operable in a high-swing mode, a low-swing mode with equalization, and a low-swing mode without equalization. Transmitter circuitry provided in this way removes undesirable DC voltage paths to ground present in other driving schemes to reduce power consumption while still meeting bandwidth, flexibility, and scalability demands.

Abstract: A source-coupled logic (SCL) gate configured to reduce power supply noise generation and reduce DC power consumption by adjusting a bias current to deliver only the performance level required for a given application. The SCL gate circuit arrangement includes a current mirror circuit with transistors configured as pull-up transistors. The pull-up transistors set the logical HIGH voltage level. The SCL gate circuit may also include voltage limiting devices configured to set the logical LOW voltage level. The current mirror circuit and the voltage limiting devices allow the SCL gate to receive a bias current supplied a bias circuit that is less complex than bias circuitry used by other examples of SCL circuitry. Adjusting the bias current delivers the desired performance with the commensurate reduction in power consumption.

Abstract: A half bridge circuit is disclosed. The circuit includes low side and high side power switches selectively conductive according to one or more control signals. The circuit also includes a low side power switch driver, configured to control the conductivity state of the low side power switch, and a high side power switch driver, configured to control the conductivity state of the high side power switch. The circuit also includes a controller configured to generate the one or more control signals, a high side slew detect circuit configured to prevent the high side power switch driver from causing the high side power switch to be conductive while the voltage at the switch node is increasing, and a low side slew detect circuit configured to prevent the low side power switch driver from causing the low side power switch to be conductive while the voltage at the switch node is decreasing.

Abstract: A semiconductor device may include a plurality of memory banks and an output buffer that may couple to the plurality of memory banks. The output buffer may produce a data voltage signal representative of data to be read from at least one of the plurality of memory banks to a controller. The semiconductor device may also include a plurality of switches that may couple a voltage source to the output buffer, a first pull-down switch that may drive the output buffer to a low voltage reference level to correct its drive strength. The device also includes a second pull-down switch that may couple the output buffer to the low voltage reference level. The plurality of switches, the first pull-down switch, and the second pull-down switch may each provide the data voltage signal to the output buffer.

Abstract: An output circuit comprises an output terminal (11), a first current mirror (12), a first pass transistor (13) and a first delivering terminal (14) coupled via the first current mirror (12) and the first pass transistor (13) to the output terminal (11).

Abstract: In accordance with embodiments of the present disclosure, a system may include a buffer and a switch coupled between the buffer and a voltage supply such that the switch controls a varying voltage at a varying voltage node coupled to the buffer.

Abstract: A voltage regulator includes an error amplifier configured to amplify a difference between a feedback voltage and a reference voltage. The regulator also includes an N-type metal-oxide-semiconductor (NMOS) driver circuit. The driver circuit includes an n-type field effect transistor. The driver circuit is communicatively coupled to output of the error amplifier. The regulator further includes a feedback circuit communicatively coupled between the NMOS driver circuit and an input of the error amplifier to provide the feedback voltage.

Abstract: A system may include a driver for driving an output signal to a load, a pre-driver for driving a pre-driver signal to the driver, the pre-driver having a variable drive strength, and a controller configured to control the variable drive strength based on at least one measured physical quantity to compensate for variation of an output signal edge rate due to variations in the at least one measured physical quantity.

Abstract: A power source multiplexer includes a first switch circuit connected between a first input voltage source node and an output voltage node. A second switch circuit is connected between a second input voltage source node and the output voltage node. A driver circuit is configured to provide a steady-state current to drive one of the first or second switch circuits to electrically connect the respective input voltage source node to the output voltage node. A boost circuit is configured to boost the steady-state current for a switching time interval when switching from one of the input voltage source nodes being connected to the output node to the other of the input voltage source nodes being connected to the output voltage node.

Abstract: A memory device includes a first set of data input/output (I/O) devices configured to communicate a first portion of a data unit to or from an external controller; a second set of data I/O devices configured to communicate a second portion of the data unit to or from the external controller; a data control circuit can share the internal global data lines by multiplexing the timings of the first and second sets of data I/O devices, the data control circuit configured to route the data unit according to a data operation corresponding to the data unit; and a shared data bus coupling both the first set of data I/O devices and the second set of data I/O devices to the data control circuit, the shared data bus configured to relay both the first portion and the second portion of the data unit.

Abstract: Circuits and methods for preventing glitch in a circuit are disclosed. In one example, a circuit coupled to an input/output pad is disclosed. The circuit includes: a first level shifter, a second level shifter, and a control logic circuit. The first level shifter is configured for generating a data signal. The second level shifter is configured for generating an output enable signal. The first and second level shifters are controlled by first and second power-on-control signals, respectively. The control logic circuit is coupled to the first level shifter and the second level shifter, and configured for driving the input/output pad to a voltage level based on the data signal and the output enable signal.

Abstract: The present disclosure relates to a data out buffer and a memory device having the same. The data out buffer includes a pull-up main driver, coupled between a power supply terminal and an output terminal, configured to output data of a high level; and a pull-down main driver, coupled between the output terminal and a ground terminal, configured to output data of a low level, wherein the pull-up main driver comprises a main pull-up transistor of a first type; and a plurality of first trim transistors, each of a second type.

Abstract: Methods and systems are described for generating a process-voltage-temperature (PVT)-dependent reference voltage at a reference branch circuit based on a reference current obtained via a band gap generator and a common mode voltage input, generating a PVT-dependent output voltage at an output of a static analog calibration circuit responsive to the common mode voltage input and an adjustable current, adjusting the adjustable current through the static analog calibration circuit according to a control signal generated responsive to comparisons of the PVT-dependent output voltage to the PVT-dependent reference voltage, and configuring a clocked data sampler with a PVT-calibrated current by providing the control signal to the clocked data sampler.

Abstract: A gate driving circuit includes a pull-up control part for applying a first previous carry signal to a first node in response to the first previous carry signal, a first pull-up part outputting a clock signal as an N-th gate output signal in response to a signal applied to the first node, a second pull-up part outputting the clock signal as the N-th gate output signal in response to the signal applied to the first node, a carry part outputting the clock signal as an N-th carry signal in response to the signal applied to the first node, a first pull-down part pulling down the signal at the first node to a second off voltage, and a second pull-down part pulling down the N-th gate output signal to a first off voltage, wherein one of the first pull-up part and the second pull-up part is selectively activated.

Abstract: A low dropout voltage regulator, coupled to a load circuit receiving a clock signal, includes an amplifier; a power transistor comprising a control terminal, coupled to an output terminal of the amplifier; and a first terminal, coupled to a positive input terminal of the amplifier and the load circuit; and a control circuit, configured to control a current flowing through the power transistor in response to the clock signal.

Abstract: A small semiconductor device is provided. The semiconductor device includes a register, switches, a memory circuit, a controller, and a display. An output terminal of the register is electrically connected to two or more of the switches. The switches are electrically connected to the memory circuit. The register has a function of retaining data corresponding to a parameter used when the controller operates. The switches have a function of selecting the memory circuit to which the data retained in the register is to be output. The memory circuit has a function of retaining the data output from the register. The controller has a function of reading the data retained in the memory circuit to control operation of the display.

Abstract: A current sink circuit coupled to pull down a gate control node (GCN) for an NMOS power FET that controls an actuator includes first and second NMOS transistors coupled in series between the GCN and a lower rail, where the first NMOS transistor has a gate and drain coupled together through a resistor. The current sink circuit also includes a control signal generation circuit (CSGC) and a negative voltage blocking circuit (NVBC). The CSGC is coupled to receive at least one voltage input and an ignition signal and to provide a first control signal and a second control signal. The NVBC is coupled to pass the first control signal from the control signal generation circuit to the gate of the first NMOS transistor and to block a negative voltage on the GCN from reaching the CSGC. The second control signal is coupled to the gate of the second NMOS transistor.

Abstract: A device includes a power supply line, an output terminal, a circuit configured to perform a logic operation on a first signal and a second signal to produce a third signal, first, second and third transistors. The first transistor is coupled between the power supply line and the output terminal and includes a control gate supplied with the third signal. The second and third transistors are coupled in series between the power supply line and the output terminal. The second transistor includes a control gate supplied with the first signal and the third transistor includes a control gate supplied with a fourth signal that is different from each of the first, second and third signals.