Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

Abstract: An USB hub including a power input port, a main power converting circuit, a first and a second type-C USB ports, and a first and a second power converting circuits is provided. The power input port receives an input power. The main power converting circuit converts the input power into a main power. The first and the second power converting circuits receive the main power respectively, and are coupled to the first and the second type-C USB ports respectively. The first and the second power converting circuits respectively obtain a first and a second operation power information of a first and a second external electronic devices, and respectively generate and provide a first and a second operating powers required by the first and the second external electronic devices for normal operation according to the first and the second operation power information.

Abstract: A switch module includes a collector connection, an emitter connection, and a gate connection. The switch module includes a plurality of parallel connected switching elements, e.g., insulated-gate bipolar transistors, each having a collector electrode electrically connected to the collector connection, an emitter electrode electrically connected to the emitter connection, and a gate electrode electrically connected to the gate connection. A fault protection device is operatively electrically connected between the gate connection and the switching elements and comprises passive electrical components which are selected such that in the event of a fault in at least one of the plurality of switching elements, a gate-emitter voltage is provided to the gate electrodes of non-faulty switching elements in a passive manner.

Abstract: In one embodiment, an inverter generates an inverted clock signal using (i) first P-type and N-type transistors connected in cascode between supply and ground nodes and (ii) control circuitry receiving different phase-offset input clock signals that ensure that the cascode-connected transistors are never even partially on at the same time, thereby preventing crowbar current from occurring through the cascode-connected devices. In one implementation, the control circuitry has two P-type transistors and two N-type transistors configured to receive three phase-offset input clock signals to prevent crowbar current in the inverter. The control circuitry has pass transistors that selectively allow one of the phase-offset input signals to be applied to the gate of one of the cascode-connected transistors with minimal delay, thereby enabling the inverter to operate properly over a relatively wide range of input clock frequencies.

Abstract: Kickback current from a charge pump to a power management integrated circuit (PMIC) may be reduced by dissipating charge from fly and hold capacitors during mode transitions. A switch may be placed in series between the charge pump and the PMIC to disconnect the charge pump and prevent kickback current from reaching the PMIC. Further, additional loads, as switches, may be coupled to the charge pump outputs to dissipate charge from the fly and hold capacitors. Additionally, a closed feedback loop may be used to monitor and discharge excess charge from the fly and hold capacitors during mode transitions. Furthermore, charge may be redistributed between the fly and hold capacitors during mode transitions to reduce the time period of the transition.

Abstract: The present invention relates to a gate driving circuit, and a array substrate and a display using the same.

Abstract: A system includes at least two power semiconductor chips being connected in parallel and including each a gate terminal for switching the power semiconductor chip in a blocking-state by a first gate voltage and for switching the power semiconductor chip in a conducting-state by a second gate voltage. The system includes further a control device adapted for applying the first or the second gate voltage to the gate terminals of the at least two power semiconductor chips. The control device is adapted for applying a third gate voltage to the gate terminal of the at least one remaining power semiconductor chip when a power semiconductor chip fails, and that the third gate voltage is higher than the second gate voltage.

Abstract: In accordance with embodiments of the present disclosure, systems and methods may include a switch coupled at its gate terminal to an input signal voltage, the input signal voltage for controlling a gate voltage of a gate terminal of a driver device coupled at its non-gate terminals between a rail voltage and an output node. The systems and methods may also include a diode having a first terminal and a second terminal, the diode coupled to a non-gate terminal of the switch such that when the switch is enabled, the first terminal is electrically coupled to the gate terminal of the driver device and the second terminal is electrically coupled to the output node.

Abstract: A gate drive circuit includes: an input port for receiving a control signal; an output port; a capacitor connected to the output port; a modulation unit which generates (i) a first modulated signal indicating timing of a first logical value of the control signal and (ii) a second modulated signal indicating timing of at least a second logical value of the control signal; a first electromagnetic resonance coupler which wirelessly transmits the first modulated signal; a second electromagnetic resonance coupler which wirelessly transmits the second modulated signal; a first rectifier circuit which generates a first demodulated signal by demodulating the first modulated signal, and outputs the first demodulated signal to the output port; and a second rectifier circuit which generates a second demodulated signal by demodulating the second modulated signal, and outputs the second demodulated signal to the output port.

Abstract: A method and corresponding circuits for operating a parallel DMOS switch that includes a pair of P-type DMOS devices connected in series with each other and in parallel with a pair of N-type DMOS devices connected in series with each other. The method and circuits involve turning the switch on by applying gate signals to the DMOS device pairs which are generated using at least one source voltage of a DMOS device pair. The switch is turned off by setting the gate signals equal to the respective source voltages of the DMOS device pairs.

Abstract: There is provided a driving circuit including: a signal delay unit including a first delay unit delaying a high level input signal in a case in which an input signal has a high level, and a second delay unit delaying a low level input signal when the input signal has a low level; a signal output unit including first and second transistors connected to the first and second delay units and performing a switching operation under the control of the first and second delay units, respectively; and an output holding unit maintaining an output voltage at a level equal to that immediately before the first and second transistors are turned off, when the first and second transistors are simultaneously turned off.

Abstract: A transistor control circuit includes: an electrode control circuit configured to apply a positive potential to a control electrode in a transistor that includes the control electrode between a gate and a drain.

Abstract: Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS); correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

Abstract: A method and corresponding circuits for operating a parallel DMOS switch that includes a pair of P-type DMOS devices connected in series with each other and in parallel with a pair of N-type DMOS devices connected in series with each other. The method and circuits involve turning the switch on by applying gate signals to the DMOS device pairs which are generated using at least one source voltage of a DMOS device pair. The switch is turned off by setting the gate signals equal to the respective source voltages of the DMOS device pairs.

Abstract: A gate drive circuit capable of turning on a semiconductor switching element at high speed, which includes: a buffer circuit including a turn-on-drive switching element and a turn-off-drive switching element that are complementarily turned on and off, for driving the semiconductor switching element; a first DC voltage supply including a positive electrode connected to the source or emitter of the turn-on-drive switching element and a negative electrode connected to a reference potential; and a second DC voltage supply including a positive electrode connected to the source or emitter of the turn-off-drive switching element and a negative electrode connected to the reference potential.

Abstract: Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS); correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

Abstract: A system includes at least two power semiconductor chips being connected in parallel and including each a gate terminal for switching the power semiconductor chip in a blocking-state by a first gate voltage and for switching the power semiconductor chip in a conducting-state by a second gate voltage. The system includes further a control device adapted for applying the first or the second gate voltage to the gate terminals of the at least two power semiconductor chips. The control device is adapted for applying a third gate voltage to the gate terminal of the at least one remaining power semiconductor chip when a power semiconductor chip fails, and that the third gate voltage is higher than the second gate voltage.

Abstract: A gate driver includes a logic circuit for generating a plurality of buffer input signals and a modulation signal, a plurality of buffers each for generating a respective gate driving signal according to a corresponding one of the plurality of buffer input signals, and a switch module for controlling electrical connection between a first voltage source and the plurality of buffers. During a modulation period, the modulation signal indicates the switch module to break the electrical connection, and the plurality of buffer input signals are configured to short output terminals of the plurality of buffers so as to modulate the gate driving signals.

Abstract: A switch controller has a charge pump, a selector switch connected to the charge pump, and a pre-charge power supply input connectable to the input of the selector switch. For each of the output channels being controlled, a power control switch is connected to an output of the selector switch. In response to commands, output channels are enabled and disabled, causing corresponding actions in the power control switches. When an output channel is to be activated, the output channel is selected by the selector switch and the pre-charge power supply connected to the input of the selector switch. The charging is completed by the charge pump and the enabled status of the power control switch is maintained by the charge pump.

Abstract: A switch controller has a charge pump, a selector switch connected to the charge pump, and a pre-charge power supply input connectable to the input of the selector switch. For each of the output channels being controlled, a power control switch is connected to an output of the selector switch. In response to commands, output channels are enabled and disabled, causing corresponding actions in the power control switches. When an output channel is to be activated, the output channel is selected by the selector switch and the pre-charge power supply connected to the input of the selector switch. The charging is completed by the charge pump and the enabled status of the power control switch is maintained by the charge pump.

Abstract: A power circuit. One embodiment provides a circuit for driving a power transistor having a control electrode and a load path. The circuit includes a driver circuit configured to change the power transistor to a completely on or off state with the aid of a control signal supplied to the control electrode. A series circuit includes a semiconductor switching element and a capacitor. The series circuit is connected in parallel with the load path and the capacitor provides a supply voltage for the driver circuit.

Abstract: A semiconductor integrated circuit includes a core circuit, a power supply switch situated on a path providing a current to the core circuit and configured to control a state of current supply to the core circuit in response to a control signal applied to a control node, a clamp circuit configured to clamp a voltage of the control signal, and a switching circuit configured to control whether to enable or disable a clamp operation of the clamp circuit.

Abstract: Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell.

Abstract: A switching circuit of the present invention can be advantageously used in an electronic control unit mounted on an automotive vehicle. The switching circuit is constituted by a pair of P-channel MOS-FETs connected in series between an input terminal and an output terminal. Sources of both MOS-FETs are connected to a common source junction and gates thereof are connected to a common gate junction. A Zener diode connected between the common source junction and the common gate junction is used for protecting the MOS-FETs. A resistor is connected in parallel to the Zener diode to bring the switching circuit to a non-conductive state when the gate voltage at the common gate junction becomes indefinite and a high voltage is supplied to the output terminal. In place of the resistor, an additional P-channel MOS-FET may be used in the switching circuit to bring the switching circuit to the non-conductive state when the voltage at the common gate junction becomes indefinite.

Abstract: A passgate circuit comprises a first depletion mode n-channel JFET, a depletion mode p-channel JFET, and a second depletion mode n-channel JFET. The first depletion mode n-channel JFET has a first terminal coupled to an input port, a second terminal that receives a first control signal, and a third terminal. The depletion mode p-channel JFET has a first terminal coupled to the third terminal of the first depletion mode n-channel JFET, a second terminal that receives a second control signal, and a third terminal. The second depletion mode n-channel JFET has a first terminal coupled to the third terminal of the depletion mode p-channel JFET, a second terminal that receives the first control signal, and a third terminal coupled to an output port.

Abstract: A semiconductor switch includes a first semiconductor circuit having a nonlinear characteristic, and a second semiconductor circuit having a nonlinear characteristic. Each of the first semiconductor circuit and the second semiconductor circuit is configured to at least one of allow and interrupt transmission of a signal. The first semiconductor circuit reduces the nonlinear characteristic of the second semiconductor circuit and the second semiconductor circuit reduces the nonlinear characteristic of the first semiconductor circuit.

Abstract: Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS): correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors: capacitors (C2, C3) connected between the control terminals and the input terminal: diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

Abstract: A drive circuit for a voltage driven type semiconductor element, includes: an electrical charge discharge unit that discharges electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; and an electrical discharge control unit that detects a time variation of a collector voltage of the voltage driven type semiconductor element, and controls electric discharge by the electrical charge discharge unit according to the time variation of the collector voltage which has been detected.

Abstract: A signal transmission amplifier circuit has a transmission gate with an input coupled to an input signal. A cross coupled latch is coupled to an output of the transmission gate and has a signal output. A reference generating circuit is coupled to the cross coupled latch.

Abstract: A drive circuit for a power semiconductor device includes: a sampling signal generating circuit for detecting that an input control signal instructs OFF and outputting a sampling signal at the time instant of start of a Miller period of time of an IGBT; a gate voltage detecting circuit for detecting a Miller voltage of the IGBT at the timing when the sampling signal is inputted and outputting, when the Miller voltage is equal to or larger than a threshold, an over-current detection signal; and a gate voltage controlling circuit for controlling, in response to the over-current detection signal, a gate voltage of the IGBT in such a way that the IGBT is turned OFF at slower speed than in the normal state. Thus, it is possible to suppress a surge voltage which is generated when the IGBT is turned OFF during the flow of an over-current.

Abstract: A method and apparatus for buffering a signal in a voltage island that is in standby or sleep mode. The apparatus uses a buffer(s) that are powered from a global power supply voltage that is always powered, and such buffer(s) are placed within the sleeping island itself. The sleeping island can be at the same or different voltage from the global voltage.

Abstract: An apparatus for conditioning an output waveform delivered from a testing device produces an output voltage that is the sum of a control voltage and an input voltage. To that end, the apparatus includes an input for receiving the input voltage, and an output capable of producing the output voltage. The output is coupled with the testing device. The apparatus further includes a voltage element coupled between the input and the output, and a switching element to alternatively charge and discharge the voltage element. The switching element controls the voltage element to change the control voltage between a first voltage and a second voltage. Consequently, the output voltage is the sum of the control voltage and the input voltage.

Abstract: An on-chip test bus circuit for testing a plurality of circuits and an associated method. The test bus circuit consists of a test bus and a plurality of switching circuits which selectably provide electrical connections between the respective circuits and the test bus. The plurality of switching circuits are configured to transfer an electrical charge between a node disposed within each switching circuit not selected to provide an electrical connection and a respective charge source or sink. The charge source or sink may consist of a low-impedance, substantially noise-free DC voltage or signal source.

Abstract: A current source apparatus with bias switches, applied in digital-to-analog converters, is disclosed. The current compliance and settling time performances can be promoted via improving the structure of the bias circuit and making the MOS transistors operate in the saturation region, without increasing the dimensions of the MOS transistors.

Abstract: A bootstrap circuit includes a transfer transistor and a driver transistor of the same channel type each having two channel terminals and a gate. A first signal terminal receives a first signal and a second signal terminal receives a second signal. One of the channel terminals of the transfer transistor is connected to the gate of the driver transistor. The other of the channel terminals of the transfer transistor is connected to the first signal terminal. One of the channel terminals of the driver transistor is connected to the second signal terminal. The other of the channel terminals of the driver transistor forms an output of the bootstrap circuit. A configuration generates a third signal and has an output connected to the gate of the transfer transistor. The second signal has an edge extending from a first level to a second level and beginning at a bootstrap time.

Abstract: A method and circuit for preventing forward bias of a collector-substrate diode in an integrated circuit with a bipolar transistor where a load driven by the transistor may be offset from a reference voltage, such as circuit ground, by a varying voltage offset. The difference between the bipolar transistor collector voltage and the reference voltage is sensed, and the bipolar transistor base current is varied responsive to the sensed difference so that the base current is zero when the collector voltage is equal to the reference voltage, whereby the collector current will be less than .beta. times the base current when the emitter voltage is less than the reference voltage and the diode will not become forward biased.

Abstract: In a sampling circuit including a first main terminal (P) and a series coupling of a hold capacitor (C2) and a sampling switch (S2) between the first main terminal (P) and a second main terminal (E), a parallel circuit (L2, R4) of a coil and a resistor (L2) is coupled in series with the sampling switch (S2) and the hold capacitor (C2), whereby the combination of the coil (L2), the resistor (R4) and the hold capacitor (C2) generate an excitation within a time period in which the sampling switch (S2) is conductive.