Abstract: When a signal glitches, logic receiving the signal may change in response, thereby charging and/or discharging nodes within the logic and dissipating power. Providing a glitch-free signal may reduce the number of times the nodes are charged and/or discharged, thereby reducing the power dissipation. A technique for eliminating glitches in a signal is to insert a storage element that samples the signal after it is done changing to produce a glitch-free output signal. The storage element is enabled by a “ready” signal having a delay that matches the delay of circuitry generating the signal. The technique prevents the output signal from changing until the final value of the signal is achieved. The output signal changes only once, typically reducing the number of times nodes in the logic receiving the signal are charged and/or discharged so that power dissipation is also reduced.

Abstract: Aspects of the present disclosure provide for a circuit, comprising a first node configured to couple to a first current source and a second current source. The circuit also comprises a first filter configured to couple between a voltage supply and the first node, the first filter being a first dynamically controllable current filter. The circuit further comprises a current mirror coupled between the first node and a second node configured to couple to a third current source and a fourth current source. The circuit additionally comprises a second filter configured to couple between the second node and a ground node, the second filter being a second dynamically controllable current filter.

Abstract: A memory device may include the following elements: a first memory cell; a first word line for transmitting a first control signal to control an electrical connection in the first memory cell; a first bit line connected to the first memory cell; a first transistor, wherein a first terminal of the first transistor is connected to the first bit line; a second memory cell; a second word line for transmitting a second control signal to control an electrical connection in the second memory cell; a second bit line connected to the second memory cell; a second transistor, wherein a first terminal of the second transistor is connected to the second bit line; and a sense amplifier having a first input terminal connected to a second terminal of the first transistor and having a second input terminal connected to a second terminal of the second transistor.

Abstract: A semiconductor device including a non-volatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written or rewritten to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that the predetermined amount of charge is held in the node. Further, when a transistor whose threshold voltage is controlled and set to a positive voltage is used as the reading transistor, a reading potential is a positive potential.

Abstract: In accordance with an embodiment, a circuit includes a first transistor, a second transistor having a reference node coupled to an output node of the first transistor, and a control circuit. The control circuit is configured to couple a second reference node to a control terminal of the second transistor during a first mode of operation, couple a floating reference voltage between the control terminal of the second transistor and the reference terminal of the second transistor during a second mode of operation and during a third mode of operation, and couple a third reference node to the reference terminal of the second transistor during the third mode of operation. The second reference node is configured to have a voltage potential operable to turn-on the second transistor, and the floating reference voltage is operable to turn on the second transistor.

Abstract: A control circuit for generating a first control signal and a second control signal includes: an inverter, used for generating an inverted clock according to an input clock; a first delay circuit, used for generating a first delay control signal; a second delay circuit, used for generating a second delay control signal; a first mask circuit, used for generating a first mask signal according to the input clock; a second mask circuit, used for generating a second mask signal according to the inverted input clock; a first logic determining circuit, used for generating the first control signal to the first delay circuit according to the second mask signal and the input clock; and a second logic determining circuit, used for generating the second control signal to the second delay circuit according to the first mask signal and the inverted clock.

Abstract: A test apparatus that tests a device under test, including a power supply section that supplies the device under test with power, a comparing section that detects a characteristic value indicating a state of the device under test and compares the characteristic value to a predetermined threshold value, a cutoff section that cuts off the power supplied from the power supply section to the device under test, based on a result of the comparison by the comparing section, and a control section that changes at least one of the threshold value of the comparing section and a detection timing at which the characteristic value is detected.

Abstract: Input/output (I/O) line driving circuits are provided. The circuit includes a first I/O line driver and a second I/O line driver. The first I/O line driver receives a first input signal in response to an enable signal to generate a first control signal and drives a first I/O line in response to a second control signal. The second I/O line driver receives a second input signal in response to the enable signal to generate the second control signal and drives a second I/O line in response to the first control signal.

Abstract: In accordance with an embodiment, a circuit for driving a switch includes a driver circuit. The driver circuit includes a first output configured to be coupled to a gate of the JFET, a second output configured to be coupled to a gate of the MOSFET, a first power supply node, and a bias input configured to be coupled to the common node. The switch to be driven includes a JFET coupled to a MOSFET at a common node.

Abstract: In the case of reducing an effect of variations in current characteristics of transistors by inputting a signal current to a transistor in a pixel, a potential of a wiring is detected by using a precharge circuit. In the case where there is a difference between a predetermined potential and the potential of the wiring, a charge is supplied to the wiring to perform a precharge by charging rapidly. When the potential of the wiring reaches the predetermined potential, the supply of charge is stopped and a signal current only is supplied. Thus, a precharge is performed only in a period until the potential of the wiring reaches the predetermined potential, therefore, a precharge can be performed for an optimal period.

Abstract: A coupling circuit has a first and a second transistor (P1, P2) of a p-channel field-effect transistor type. A drain terminal of the first transistor (P1) is connected to a signal input (1), source terminals of the first and the second transistor (P1, P2) are commonly connected to a signal output (2), bulk terminals of the first and the second transistor (P1, P2) are commonly connected to a drain terminal of the second transistor (P2), and a gate terminal of the first transistor (P1) is connected to a gate terminal of the second transistor (P2). The coupling circuit further comprises a gate control circuit (10) with a charge pump circuit (110) which is configured to generate a negative potential. The gate control circuit (10) is configured to control a gate voltage at the gate terminals of the first and the second transistor (P1, P2) based on a negative potential.

Abstract: A power supply regulator circuit uses a feedback loop to control current through a first output transistor from a power supply input to a regulated power supply output. The first output transistor is included in an integrated circuit. In order to avoid heating of the integrated circuit in excess of an acceptable level due to permanent supply of a high current through the first transistor, current through a second output transistor in parallel with the first transistor, but outside the integrated circuit is raised when it is detected that the current through the first output transistor exceeds a threshold level. The second output transistor outside the integrated circuit serves to take over supply of a part of the power supply current from first output transistor inside integrated circuit, when long term supply of that part from first output transistor would lead to undesirable heating of the integrated circuit. During a limited time interval a first transistor current above the threshold level is acceptable.

Abstract: An output buffer comprises a series connection of a first field effect transistor and a second field effect transistor, wherein the first field effect transistor is connected to a first supply potential terminal and the second field effect transistor is connected to a second supply potential terminal. An output terminal is connected to a common connection of the first transistor and the second transistor. The output buffer has a series connection of a resistive element and a capacitive element, wherein the capacitive element is connected to the output terminal, and a control circuit, to which an input signal is provided. The control circuit controls the transistors in such a way that turning off of a transistor is performed immediately, while turning on of a transistor is performed depending on the charging or discharging of the capacitive element, thus achieving a defined slew rate of the output signal at the output terminal.

Abstract: Various exemplary embodiments relate to gate driver circuitry that compensate for parasitic inductances. Input buffers in the gate driver are grounded to an exposed die pad. Grounding may involve either a downbond or conductive glue.

Abstract: Structures and methods for implementing alternating power gating in integrated circuits. A semiconductor structure includes a power gated circuit including a group of power gate switches and an alternating enable generator that generates enabling signals. Each respective one of the power gate switches is enabled by a respective one of the enabling signals. The alternating generator generates the enabling signals such that a first enabled power gate switch is alternated amongst the group of power gate switches.

Abstract: In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to-source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor.

Abstract: In the case of reducing an effect of variations in current characteristics of transistors by inputting a signal current to a transistor in a pixel, a potential of a wiring is detected by using a precharge circuit. In the case where there is a difference between a predetermined potential and the potential of the wiring, a charge is supplied to the wiring to perform a precharge by charging rapidly. When the potential of the wiring reaches the predetermined potential, the supply of charge is stopped and a signal current only is supplied. Thus, a precharge is performed only in a period until the potential of the wiring reaches the predetermined potential, therefore, a precharge can be performed for an optimal period.

Abstract: A decoupling circuit includes an inverter. The inverter includes i (i is an integer of 1 or more) PMOS transistors each having a first gate electrode, and j (j is an integer of 0 or more) PMOS transistors each having a second gate electrode. The inverter includes m (m is an integer of 1 or more) NMOS transistors each having a third gate electrode, and n (n is an integer of 0 or more) NMOS transistors each having a fourth gate electrode. The first to fourth gate electrodes are coupled to an input end of the inverter. A total area of the first and second gate electrodes is different from a total area of the third and fourth gate electrodes.

Abstract: In accordance with an embodiment, a circuit for driving a switch includes a driver circuit. The driver circuit includes a first output configured to be coupled to a gate of the JFET, a second output configured to be coupled to a gate of the MOSFET, a first power supply node, and a bias input configured to be coupled to the common node. The switch to be driven includes a JFET coupled to a MOSFET at a common node.

Abstract: A voltage mode driver circuit able to achieve a larger voltage output swing than its supply voltage. The voltage mode driver circuit is supplemented by a current source or “current booster.” The circuit includes a first inverter, a second inverter, and a current source. The first inverter receives a first input and output a signal at anode. The second inverter receives another input outputs at the same output node. The current source is serially coupled to the output node via a first switch, the first switch receiving an input at the first input.

Abstract: A delay method for determining an activation time of an output device in a circuit system is disclosed. The delay method includes determining resistance of an over-current flag pull-high resistor of the circuit system, generating a current according to the resistance of the over-current flag pull-high resistor and a voltage drop across the resistor, duplicating the current to generate a division current, drawing the division current from a charging current to determine an activation current of the output device, and determining the activation time point of the output device according to the activation current.

Abstract: An electric circuit includes a first circuit, a second circuit, a synchronization detection circuit, a storage circuit, and a correction circuit. The first clock is configured to operate with a first clock, the second circuit is configured to operate with a second clock which is different in frequency from the first clock, and the synchronization detection circuit is configured to detect synchronization of the first and second clocks. The storage circuit is configured to store an output noise pattern of the second circuit, based on the synchronization detected by the synchronization detection circuit, and the correction circuit is configured to correct an output of the second circuit by using the output noise pattern.

Abstract: The present invention discloses a transistor driving module, coupling to a converting controller, to driving a high side transistor and a low side transistor connected in series, wherein one end of the high side transistor is coupled to an input voltage and one end of the low side transistor is grounded. The transistor driving module comprises a high side driving unit, a low side driving unit, a current limiting unit and an anti-short through unit. The high side driving unit generates a high side driving signal to turn the high side transistor on according to a duty cycle signal, and the low side driving unit generates a low side driving signal turn the low side transistor on according to the high side driving signal. The current limiting unit is coupled to the high side transistor and the high side driving unit, and generates a current limiting signal when a current flowing through the high side transistor higher than a current limiting value.

Abstract: In accordance with an embodiment, a method of driving switches includes sensing a control node of a first switch, sensing a control node of a second switch, and driving the control node of the first switch to a first active state after the control node of the second switch transitions to a second active state. The method also includes driving the control node of the second switch to a second inactive state after the control node of the first switch transitions to a first inactive state. Driving the control node of the first switch is based on sensing the control node of the second switch, and driving the control node of the second switch is based on based on sensing the control node of the first switch.

Abstract: A signal level adjustment system adjusting a level of signal outputted from a signal output circuit is realized. An input buffer threshold adjustment unit sets a threshold of a signal input circuit to a first variable value. A signal level adjustment unit adjusts an output level of a first signal at the signal output circuit until a voltage of the first signal outputted from the signal output circuit and inputted to the signal input circuit falls into a given range determined based on the threshold.

Abstract: The present invention provides a switching device and a method for preventing malfunction of the same. The switching device includes: a controller for outputting a plurality of digital control signals; a protecting unit connected to the controller for protecting all signals when the plurality of digital control signals outputted from the controller are simultaneously received at a state of ON; a gate driver connected to the protecting unit for generating a switch control signal by converting the control signal passed through the protecting unit; and a plurality of switches connected to the gate driver for individually performing ON•OFF operations according to each of the switching control signals.

Abstract: A control circuit for controlling a switching device having a first terminal, a second terminal, and a control terminal is disclosed. The control circuit includes a first diode for coupling to the first terminal of the switching device, a second diode for coupling to the second terminal of the switching device, a first transistor for coupling to the control terminal of the switching device, and a second transistor coupled to the second diode. The first transistor is coupled to the first diode. The control circuit is configured to allow current flow in only one direction between the first and second terminals of the switching device.

Abstract: A delay method for determining an activation moment of an output device in a circuit system is disclosed. The delay method includes determining resistance of an over-current flag pull-high resistor of the circuit system, generating a current according to the resistance of the over-current flag pull-high resistor and a voltage drop across the resistor, duplicating the current to generate a first mirror current, delaying an enable signal of the circuit system according to the first mirror current to generate a charging activation signal, providing a charging current according to the charging activation signal, and determining the activation moment of the output device according to the activation current.

Abstract: A switching-control circuit, which causes a first transistor, having an input electrode to be applied with an input voltage and an output electrode connected to an inductor and a diode, to be turned on and kept on for a predetermined time period, includes: a comparison circuit to compare a feedback voltage corresponding to an output voltage with a reference voltage; a detecting circuit to detect a switching period of the first transistor; and a driving circuit to turn off a second transistor connected in parallel to the diode as well as turn on the first transistor to be kept on for the predetermined time period, and thereafter, turn off the first and second transistors, when the feedback voltage becomes lower than the reference voltage, and turn off the first transistor as well as turn on the second transistor, when the switching period becomes longer than a predetermined period.

Abstract: An emission driver may include a first signal processor adapted to receive a clock signal, an input signal and an inverse input signal, and generate a first output signal, a second signal processor adapted to receive the first output signal, an inverse clock signal and negative feedback signals, and generate a second output signal, a third signal processor adapted to receive the second output signal and the input signal, and generate a third output signal that is an inverse of the second output signal based on the input signal, a fourth signal processor adapted to receive the second output signal, and generate a fourth output signal based on the second output signal, the fourth output signal being an inverse signal of the third output signal, and a fifth signal processor adapted to receive the fourth output signal and output a fifth output signal based on a stored predetermined voltage.

Abstract: An image display system comprises a pixel driving circuit. A storage capacitor is coupled between the first and second nodes. The first switch is turned on in the first and second periods. The second switch, coupled to the first node, is turned on in the first and second periods. The third switch, coupled between the second node and the first switch, is turned on in the first, third and fourth periods. The fourth switch, coupled between the second switch and the first voltage, is turned on in the first, third and fourth periods. The fifth switch, coupled between the second node and the first voltage, is turned on in the first, second and third periods. The sixth switch, coupled between the first node and the reference voltage, is turned on in the fourth period. The first transistor is coupled between the first and second switches and is turned on in the fourth period. During the second period, the voltage between source and gate of the first transistor is a threshold voltage.

Abstract: A driver circuit facilitates reducing noises and losses and improving the driving performances thereof without connecting a series circuit of capacitor and a resistor to the gate of IGBT. The driver circuit includes a slope setting circuit that sets the gate voltage waveform of IGBT; and an operational amplifier that includes a non-inverting input terminal, to which an output voltage V* from slope setting circuit is inputted, and an inverting input terminal, to which a divided voltage Vgsf divided by resistors is inputted; and the operational amplifier outputs an output voltage Vout, proportional to the difference between the output voltage V* and the divided voltage Vgsf, to the gate of IGBT.

Abstract: An electric circuit device includes: a power supply line; a load circuit; a current supply controller which compares a voltage of the power supply line with a certain voltage; and a current supply circuit which supplies a electric current from the power supply line to the load circuit and changes the electric current during a supply of the electric current.

Abstract: A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel. A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

Abstract: A switch circuit is disclosed. The switch circuit comprises: a hysteresis buffer, an electric switch, a first discharge resistor, a second discharge resistor, a capacitor, a feedback resistor, a first reciprocal switch, and a second reciprocal switch. When the second reciprocal switch is turned on, a power supply voltage charges the capacitor, and thus the voltage on the signal input terminal of the hysteresis buffer is decreased. Accordingly, the voltage on the signal output terminal of the hysteresis buffer is decreased, so as to turn on the electric switch. When the first reciprocal switch is turned on, the capacitor is discharged, and thus the voltage on the signal input terminal of the hysteresis buffer is increased. Accordingly, the voltage applied to the signal output terminal of the hysteresis buffer is increased, so as to turn off the electric switch.

Abstract: A power switching circuit in CMOS technology has a power MOS transistor and a driver stage. The power MOS transistor is operated at a higher supply voltage in excess of its maximum allowable gate-source voltage; and the driver stage of the level shifter is operated at a lower supply voltage substantially lower than the supply voltage for the power MOS transistor. The driver stage includes a pair of driver MOS transistors coupled in series between a higher supply voltage rail and a reference potential rail, and at an interconnection node coupled to the gate of the power MOS transistor. The gates of the driver MOS transistors are AC-coupled to drive signals of mutually opposite phase; and the gates of the driver MOS transistors are each connected to the higher voltage supply rail through a respective parallel connection of a first resistor and a second resistor connected in series with a non-linear component.

Abstract: In an electronic device according to the present invention, a source of the first signal-wire drive transistor is connected to a first power supply, a drain of the first signal-wire drive transistor is connected to a signal wire, and a control circuit controls a gate voltage so that a current flowing in the signal wire is amplified toward a voltage to which a potential of the signal wire transits during the potential transition in the signal wire and further controls the gate voltage so that a voltage value obtained after the potential transition in the signal wire is retained after the potential transition in the signal wire.

Abstract: A power switch circuit includes an output transistor which is connected between a first power supply terminal and an output terminal, and drives a load, an abnormality detecting circuit which detects an abnormal state of the output transistor, a resistance element which generates a resistance component by a diffusion layer formed on a well region, and is provided between an input terminal and a control terminal of the output transistor, and a well potential switching circuit which switches a voltage to be supplied to the well region between a voltage of the output terminal and a voltage of a second power supply terminal based on a detection result by the abnormality detecting circuit.

Abstract: A system and method for controlling input buffer biasing current include an input buffer circuit with an input current detector circuit configured to generate a plurality of discrete biasing control signals. At least one input buffer is configured to adjust the biasing current in response to the plurality of discrete biasing control signals. The plurality of discrete biasing control signals is generated in response to variations in biasing current of the at least one input buffer. The method compares a representative bias current indicator from a replica of an input buffer with a reference current to determine variations in biasing current of at least one input buffer. A plurality of discrete biasing control signals is generated indicating a configuration of a biasing control for the at least one input buffer. The at least one input buffer is biased according to the plurality of discrete biasing control signals.

Abstract: A switch arrangement for providing a drive signal at an output comprises a drive switch coupled to the output of the switch arrangement and a regulating element coupled in series between the drive switch and a power supply input of the switch arrangement. The drive switch is operable to provide the drive signal at the output. The switch arrangement is characterised in that the regulating element is coupled in a cascode arrangement with the drive switch such that in operation the regulating element limits the voltage drop across the drive switch to a predetermined level.

Abstract: The present disclosure relates to a system, apparatus and method for a line driver circuit to generate a signal detect (SD) signal when an invalid data signal is detected at its input. An invalid signal may be present either when no signal is available or when the line driver circuit or another component in the system (e.g., a crosspoint switch, a multiplexer, etc.) fails. The SD signal is coupled to an external controller that can either power down the line driver circuit to save power when no signal is available, or change over to a different line driver circuit or other component of the system when a failure is identified. When the input signal is determined to be a valid data signal via the SD signal, the line driver circuit can be enabled for operation. The described systems, apparatus and methods can save the user from having to directly control the line driver power state, especially in systems with large router configurations that may include hundreds of line drivers.

Abstract: A system, apparatus and method are arranged for monitoring an input signal for a line driver and determining if a valid data signal is present. When the input signal is determined to be an invalid data signal, an offset is introduced into the input stage of the line driver to prevent noise induced toggling of the output of the line driver. When the input signal is determined to be a valid data signal, the offset is removed from the input stage since inclusion of the offset can introduce undesirable duty cycle distortion in the output of the line driver. By dynamically adding or removing the offset from the input stage of the line driver, invalid signals are prevented from toggling the output of the line driver while preserving a clean data transmission for valid signals.

Abstract: A circuit arrangement comprising a high-side semiconductor switch with a first load terminal connected to a first supply terminal receiving an input voltage, a second load terminal connected to an output terminal providing an output signal, and a control terminal, a floating driver circuit connected to the control terminal for driving the semiconductor switch, a level shifter receiving an input signal and providing a floating input signal dependent on the input signal, a floating control logic receiving the output signal and the floating input signal and providing at least one control signal to the floating driver circuit, wherein the floating control logic comprises means for detecting an edge in the output signal and means for generating the control signal dependent on the result of the edge detection.

Abstract: A switch provided between a first terminal and a second terminal with a varying cross terminal voltage. The switch contains two transistors, with the source terminal of the first transistor being coupled to the first terminal and a drain terminal of the second transistor being coupled to the second terminal. The gate terminal of the first transistor is coupled to the first terminal, the gate terminal of the second transistor is coupled to the second terminal, and the drain terminal of the first transistor is coupled to the source terminal of the second transistor. Due to such a topology, the cross-terminal voltage across the first and second terminals can be substantially higher than the voltage of the control signal indicating whether the switch is to be in on or off state.

Abstract: A switching system capable of reducing the noise of the output signal is provided. The switching system includes a first switch and a second switch, wherein the first switch conducts a first signal according to a first control signal; the second switch conducts a second signal according to a second control signal. And the voltages of the first control signal and the second control signal are restricted within a voltage interval to reduce the noise produced during the switching of the switches.

Abstract: A circuit including a voltage boost circuit coupled to a first node and a second node, and configured to apply a boosted first node voltage to the second node; and an inverter circuit coupled to the first node, the second node, and a third node, and configured to generate a signal on the third node in response to the signals on the first node and the second node.

Abstract: A system, method, and electrical circuit comprises a LNA signal line path comprising a LNA and a first signal mixer operatively connected to the LNA. The circuit further comprises an attenuator signal line path comprising an attenuator and a second signal mixer operatively connected to the attenuator; a radio frequency (RF) power detector operatively connected to an output of each of the LNA and the attenuator, wherein the RF power detector is adapted to vary a front end power gain of the electrical circuit; and logic circuitry operatively connected to the RF power detector, wherein the logic circuitry is adapted to (i) select transmission of a signal through only one of the LNA signal line path or the attenuator signal line path, and (ii) output the selected signal.

Abstract: A bi-directional switch comprising first and second semiconductor switching devices, a current sensor connected in series with the switching devices, thereby forming a series circuit, a driver circuit controlling the on/off operation of the first and second switching devices such that the first and second switching devices are substantially simultaneously turned on and off, the driver circuit turning the first and second switching devices on in response to a control input and turning the first and second switching devices off when current in the current sensor substantially drops to near a zero current. A discharge sustain driver circuit employing the bi-directional switches for a plasma display panel (PDP) is also described.

Abstract: An apparatus and method for improving memory cell reliability is disclosed. The slew rate is reduced in an applied voltage signal used to program a memory cell when Fowler-Nordheim (FN) tunneling injection is detected. The applied programming signal is provided by a charge pump that is preferably a regulated charge pump. The charge pump is selectively controlled by a slew rate control circuit when FN tunneling injection is detected by a voltage level detection circuit at a predetermined threshold voltage level.

Abstract: Analog bidirectional switches (20) comprising a first (1) and a second (2) transistor function badly in case of the signal voltage at an input or an output of the switch (20) exceeding the supply voltage used for operating the switch (20). By providing the switch (20) with a circuit (21), a second control signal (“f”) destined for the second transistor (2) is no longer generated by solely inverting a first control signal (“e”) destined for the first tranistor (1), but is generated in response to the first control signal (“e”) and by taking into account the in/output signal (“z”) at an in/output of the switch (20). The circuit (21) comprises a generator (22) for generating the second control signal (“f”) having either a fixed value or a value of the in/output signal (“z”), and comprises a detector (23) for supplying the in/output signal (“z”) to the generator (22). A further circuit (24) comprises a further generator for generating a backgate signal (“bg”) destined for the second transistor (2).