Abstract: An avalanche diode is provided and includes a first semiconductor region and a second semiconductor region. At a deeper position, the avalanche diode includes a third semiconductor region having an impurity concentration lower than that of the first semiconductor region, and a fourth semiconductor region having an impurity concentration lower than that of the second semiconductor region. At a further deeper position, the avalanche diode includes a fifth semiconductor region having an impurity concentration lower than that of the third semiconductor region. In a plan view, the first semiconductor region overlaps at least a part of the third semiconductor region, the second semiconductor region overlaps at least a part of the fourth semiconductor region, and the third and fourth semiconductor regions overlap the fifth semiconductor region.

Abstract: A driver circuit includes a supply node, a control node configured to receive a control signal, and an output node. An output transistor is coupled to the output node to provide the CAN bus drive signal via the current path through the output transistor. A current mirror is in a current line from the supply node to the output node through the output transistor. The current line includes an intermediate portion between the current mirror and the output transistor. The current mirror is configured to be switched, as a function of the control signal between a first, dominant mode, with the CAN bus drive signal applied to the output node via the output transistor, and a second, recessive mode, with the output transistor providing a high output impedance at the output node.

Abstract: An optoelectronic device for detecting radiation, comprising a semiconductor body including: a cathode region delimited by a front surface, having a first conductivity type and including a bottom layer; an anode region having a second conductivity type, which extends in the cathode region starting from the front surface and forms a surface junction with the cathode region; and a buried region having the second conductivity type, which extends within the cathode region and forms a buried junction with the bottom layer. The cathode region further includes a buffer layer, which is arranged underneath the anode region and overlies, in direct contact, the bottom layer. The buffer layer has a doping level higher than the doping level of the bottom layer.

Abstract: A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells.

Abstract: A gate driver for driving a gate of a switching element Tr7 includes a driving part that drives the switching element according to a control signal and an active clamp circuit to clamp the voltage between the first and second main terminals of the switching element through the driving part. If a voltage applied between a first main terminal (drain) and a second main terminal (source) of the switching element exceeds a predetermined voltage, the active clamp circuit forcibly blocks a driving operation of the driving part from driving the switching element.

Abstract: An embodiment of a Geiger-mode avalanche photodiode, having: a body made of semiconductor material of a first type of conductivity, provided with a first surface and a second surface and forming a cathode region; and an anode region of a second type of conductivity, extending inside the body on top of the cathode region and facing the first surface. The photodiode moreover has: a buried region of the second type of conductivity, extending inside the body and surrounding an internal region of the body, which extends underneath the anode region and includes the internal region and defines a vertical quenching resistor; a sinker region extending through the body starting from the first surface and in direct contact with the buried region; and a contact region made of conductive material, overlying the first surface and in direct contact with the sinker region.

Abstract: An integrated circuit having a first connection, a second connection, a substrate, and a control connection, in provided. The control connection controls a conductivity of the integrated circuit between the first connection and the second connection.

Abstract: A one-way dipolar component with overcurrent protection including, in parallel, a first one-way dipolar component with a positive temperature coefficient; and a second one-way dipolar component having the same biasing as the first one-way dipolar component having a conduction threshold voltage greater than the conduction threshold voltage at ambient temperature of the first one-way dipolar component, the second component comprising a silicon diode in series with a component of a zener diode type.

Abstract: The present invention provides a system, apparatus and methodology for semiconductor device gate control utilizing a gate driver circuit 112 having opposing current inhibiting elements 130, 132 capable of controlling current flow until a predetermined voltage level is obtained across the current inhibiting element opposing the current flow. A difference of an isolated input voltage level and the predetermined voltage level approximates a gate voltage potential employed to drive a gate input of a semiconductor device. This is accomplished, in one instance of the present invention, by employing Zener diodes in an opposing fashion to produce the gate voltage potential. Zener diode breakdown voltages provide the predetermined voltage levels necessary to properly control the gated semiconductor device during gate charge and discharge cycles.

Abstract: Two groups of diodes are connected to internal lines transmitting complementary signals, respectively, and positions of the centers of gravity of the groups of diodes are made coincident with each other. A circuit capable of preventing the deviation of the characteristics of differential transistor pair caused by an antenna effect and highly immune against a substrate noise can be achieved.

Abstract: An n− type layer 12 is epitaxially grown on one main surface (front surface) of an n+ type silicon substrate 11 and an anode electrode 13 is electrically in contact with the other main surface (rear surface) thereof. A p type region 14 is selectively formed in a surface layer of the n− type layer 12 and a n+ type region 15 is selectively formed in a surface layer of the p type region 14. A cathode electrode 17 is electrically in contact with a surface of the n+ type region 15.

Abstract: Voltage level translators are presented, inter alia, for operating an operational amplifier integrated circuit designed for operation with a single ended power supply, to operate with a split level power supply having a center tapped ground. A first polarity power supply terminal of a operational amplifier integrated circuit is coupled to a first polarity of the of the split level power supply, and a second polarity power supply terminal of the operational amplifier integrated circuit is coupled to a second polarity of the power supply, with a positive signal input terminal of the operational amplifier being coupled to a center tapped ground of the split level power supply.

Abstract: A diode element circuit uses a junction between the base and collector of a vertical type PNP transistor as a diode, and is further designed that a reverse bias voltage is applied between base and emitter of a parasitic PNP transistor in the vertical type PNP transistor, thereby, a diode having a small leakage current and a high break down voltage is realized without necessitating an additional manufacturing process.

Abstract: The invention relates to a threshold value operation circuit which can perform an analogue type threshold value operation, and which can generate an AC signal with a stabilized frequency and duty ratio which is not influenced by input signal level or characteristic changes of the circuit elements and the like. A switching device (SWa) is switched by a switching signal (Sg) from an external AC source, to modulate an input signal (Vi) which is the subject of a threshold value operation. A modulation signal (V1) thereof is level detected by a level detection circuit (10) having a previously set threshold value, and if within a range of a predetermined level, an AC output (Vo) is generated from the level detection circuit (10).

Abstract: A zero crossing control circuit of a bidirectional switch including two transistors of complementary types connected in parallel between the gate of the bidirectional switch and the main reference terminal of the bidirectional switch, the gate of the bidirectional switch being connected to a control source via a first resistor, and each of the control terminals of the transistors being connected to the second main terminal of the bidirectional switch via a second resistor of high value, a zener diode being interposed between the second resistor and each of the control terminals according to a biasing adapted to turning on each of the transistors when the zener threshold is exceeded.

Abstract: This is a driver circuit 100 for use in an integrated circuit 10 for driving two complimentary signals on output terminals 104 and 106. A single device, such as a Schottky diode 170, prevents voltage breakdown resulting from an externally supplied voltage on either output terminal 104, 106. The single device, such as Schottky diode 170, provides voltage breakdown protection for an output transistor 150 and a complimentary output transistor 152.The single device can be made larger than if two devices were used so that a voltage drop across the device resulting from normal forward current conduction is minimized.

Abstract: A gate drive circuit for an isolated gate device, a method of driving the same and a switch-mode power supply employing the circuit or the method. In one embodiment, the circuit includes: (1) a capacitor, having a first terminal coupled to a source of drive voltage and a second terminal coupled to a gate of the isolated gate device, that stores a charge therein when the drive voltage maintains the isolated gate device in an "on" state and (2) a conductive path, leading from the first terminal to an output terminal of the isolated gate device and enabled when the isolated gate device is to be transitioned from the "on" state to an "off" state, that provides a negative off-bias voltage to the gate thereby to avoid spurious turn-on of the isolated gate device.

Abstract: An integrated semiconductor junction antifuse is formed from either adjacent regions of opposite doping types or spaced apart regions of similar doping type within a substrate. In its unblown state, the junction antifuse forms an open circuit that blocks current from flowing while in the blown state, the junction antifuse conducts current. The junction antifuse is blown by applying a breakdown voltage sufficient to overcome a semiconductor junction so that current flows across the reverse-biased semiconductor junction. As current flows across the reverse-biased junction, dopant migration forms a conductive path so that the junction antifuse no longer forms an open circuit.

Abstract: A semiconductor switch including a plurality of die assembled hybrid circuit packages. Each package includes a relatively large number of parallely connected semiconductor switch devices, more particularly metal oxide semiconductor field effect transistors (MOSFETs). An active snubber circuit is connected to the MOSFETs in order to remove the requirement for current sharing during circuit interruption where the MOSFETs turn-off. Each MOSFET package furthermore includes metallic arc barriers between MOSFETs to prevent an arc from propagating from one failed MOSFET to neighboring MOSFETs. Also all of the MOSFETs are turned on momentarily to extinguish arcs whenever the semiconductor switch is in an open or non-conducting condition and a current flow is detected. Clamping of the gate electrode drive bus of the MOSFETs is additionally provided to ensure fusing of gate bonding wires coupling the gate electrodes of the respective MOSFETs to the gate drive bus.

Abstract: A Zener diode is used to simplify a circuit for detecting the level of an operating voltage with respect to a specified range of use. The semiconductor junction of this Zener diode is biased alternately by one voltage or another. Under these conditions, the avalanche voltage of this Zener diode changes. The operating voltage to be monitored is connected to the cathode of this Zener diode. If the monitored operating voltage is higher than the avalanche voltage of this Zener diode, the diode alternately conducts. If the operating voltage is outside this range, this diode is either permanently on or permanently off. The variations that result therefrom are detected to report whether the operating voltage is correct.

Abstract: An apparatus for suppressing voltage transients and detecting desaturation conditions in power transistor systems. A first transistor, usually a power transistor, has a first terminal, a second terminal, a drive terminal, and an avalanche breakdown voltage rating between the first mad second terminals. The cathode of a first diode is coupled to the first terminal of the first transistor. The first diode has a reverse breakdown voltage which is less than the avalanche breakdown voltage rating of the first transistor. The anode of a second diode is coupled to the anode of the first diode, and the cathode of the second diode is coupled to the drive terminal of the first transistor. Driver circuitry is also coupled to the drive terminal, and provides a drive signal to the first transistor. An RC network comprising a first resistor and a first capacitor is coupled to the driver circuitry. The base terminal of a second transistor is coupled to the driver circuitry by means of the RC network.

Abstract: An electronic switch is disclosed for switching relatively high voltages, such as telecommunications voltages of the order of -48 volts, in response to logic levels of typically 0 to 5 volts. The switch comprises a MOSFET having a source-drain switching path and a gate; a control transistor controlled from a logic level control terminal; and a potential divider MOSFET source and the control transistor and having a tapping point coupled to the MOSFET gate. The potential divider includes a zener dime and/or a resistor connected between the MOSFET source and gate. The sinitch can be used with a current sensing resistor and a monostable circuit to fonn an automatically-reset circuit interrupter or electronic fuse.