Abstract: A transmitting module, a method for controlling antenna switching, and related products are provided. The transmitting module includes one or more channel selector-switches and one or more signal transmit-receive processing circuits. The one or more channel selector-switches include a channel selector-switch in simplified connection, where each of the one or more channel selector-switches include an n1Pn2T switch, and n1 is a positive integer and n2 is an integer greater than or equal to 2. The one or more signal transmit-receive processing circuits are coupled with the one or more channel selector-switches. According to the radio frequency modules of implementations of this application, insertion loss of radio frequency links can be reduced and sensitivity of respective channels can be improved.

Abstract: In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes at least one electronically variable capacitor (EVC), each EVC comprising discrete capacitors each having a corresponding switching circuit. Each switching circuit is configured to switch in and out its corresponding discrete capacitor to alter a total capacitance of the EVC. Each switching circuit include a first diode operably coupled to the discrete capacitor, a capacitor coupled in series with the first diode, and a second diode operably coupled to the discrete capacitor. The second diode parallel to the first diode and the capacitor coupled in series.

Abstract: An RF source impedance is raised with an impedance step-up transformer and a matching circuit is coupled between the stepped up impedance RF source and a RF load wherein the RF load impedance can be matched to the stepped up RF source impedance with a matching network comprising a variable capacitor and a variable inductor having single match solutions for all frequencies and impedances so long as the RF load impedance is less that the stepped up RF source impedance. A RF attenuator may be used to provide a better impedance load to the RF source during match determination and adjustment of the variable capacitor and variable inductor. Automatic impedance matching measures the RF source frequency and RF load voltage, current and phase to determine a single match solution for a capacitive value of the variable capacitor and an inductive value for the variable inductor.

Abstract: An RF source impedance is raised with an impedance step-up transformer and a matching circuit is coupled between the stepped up impedance RF source and a RF load wherein the RF load impedance can be matched to the stepped up RF source impedance with a matching network comprising a variable capacitor and a variable inductor having single match solutions for all frequencies and impedances so long as the RF load impedance is less that the stepped up RF source impedance. A RF attenuator may be used to provide a better impedance load to the RF source during match determination and adjustment of the variable capacitor and variable inductor. Automatic impedance matching measures the RF source frequency and RF load voltage, current and phase to determine a single match solution for a capacitive value of the variable capacitor and an inductive value for the variable inductor.

Abstract: A method and system of optimizing transmit beam forming in a multiple radio wireless system is provided. A stimulus signal can be provided to an analog receive input of a device under test (DUT), wherein the DUT includes multiple radios. A receive phase and amplitude can be measured at baseband using the stimulus signal for each radio. At this point, a receive weight and its conjugate can be determined using the receive phases and amplitudes. A calibration vector and its conjugate can also be determined, wherein a product of the receive weight conjugate and the calibration vector conjugate generate a transmit weight. This transmit weight can be applied to transmit signals during the transmit beam forming using the multiple radios.

Abstract: A circuit for switching a PIN diode has a PIN diode and an inductor (in particular a coil) as well as a direct voltage source and a group of switches, wherein in a first switch setting of the group of switches the PIN diode can be fed with current from the direct voltage source in its admission direction; and in a further switch setting the PIN diode and the inductor are separated from the direct voltage source and are arranged in a closed current loop such that the inductor can generate a discharge current upon transitioning to the further switch setting, which discharge current is directed to the PIN diode opposite to the current generated by the direct voltage source (DC).

Abstract: A three-pole three-throw switch and a communication device employing the three-pole three-throw switch includes six diodes and six inductors. The six diodes are connected in series with a same direction. Common nodes of each two diodes form three poles and three throws. The three poles and the three throws are linked together in circular form. The three poles and the three throws receive control signals via the six inductor, respectively.

Abstract: A circuit for switching a PIN diode has a PIN diode and an inductor (in particular a coil) as well as a direct voltage source and a group of switches, wherein in a first switch setting of the group of switches the PIN diode can be fed with current from the direct voltage source in its admission direction; and in a further switch setting the PIN diode and the inductor are separated from the direct voltage source and are arranged in a closed current loop such that the inductor can generate a discharge current upon transitioning to the further switch setting, which discharge current is directed to the PIN diode opposite to the current generated by the direct voltage source (DC).

Abstract: A PIN diode network includes a parallel inductor. In the off state of the PIN diode, the inductor forms a resonant tank circuit in parallel with the PIN diode. The inductor is selected based on the stray capacitance of the PIN diode so that the self resonant frequency (SRF) of the tank circuit is at or near the desired operating frequency. At the operating frequency, the impedance of the tank circuit is essentially infinite. At the operating frequency, isolation is improved for the PIN diode network as compared to a PIN diode alone. The PIN diode network allows a lower specification PIN diode to operate with higher isolation. The PIN diode network allows a lower specification PIN diode to operate at a higher frequency than would otherwise be possible due to intrinsic stray capacitance of the PIN diode.

Abstract: An RF switch circuit (10) and a tuner (12) comprising an RF switch circuit are described. The switch circuit comprises at least two input terminals and one output terminal. The input terminals are connected to different RF signal sources, e. g. a terrestrial TV antenna (16) and a TV cable network (18). The circuit comprises first SPST switches (28, 30), each connected to one of the input terminals and a second, SPDT switch (32) connected to the first SPST switches. The switch circuit achieves high isolation performance between the input terminals (20, 22).

Abstract: A broadband, high-speed RF step attenuator implemented using long-lifetime PIN diode switches is presented which provides step attenuation across a significant portion of the entire RF frequency spectrum while maintaining minimal insertion loss, return loss, and harmonics.

Abstract: A high-power PIN diode switch for use in applications such as plasma processing systems is described. One illustrative embodiment comprises an input terminal; an output terminal; and first and second transmission-line elements connected in parallel to the input and output terminals, each of the first and second transmission-line elements including a thermoconductive dielectric substrate and a microstrip line disposed on the thermoconductive dielectric substrate, the microstrip line including a plurality of substantially parallel sections that are magnetically coupled, electrically connected in series, and arranged so that electrical current flows in substantially the same direction in adjacent substantially parallel sections to mutually reinforce the magnetic fields associated with the adjacent substantially parallel sections.

Abstract: An active pixel sensor having a transparent conductor that directly contacts a conductive element in an interconnection structure to electrically connect the transparent conductor to a pixel sensor bias voltage is provided. The active pixel sensor includes a semiconductor substrate, the interconnection layer, which is formed over the substrate, and a pixel interconnection layer formed over the interconnection layer. Photo sensors that include a pixel electrode, an I-layer, and may include a P-layer are formed over the pixel interconnection layer. The transparent conductor is formed over the photo sensors and the conductive element exposed on the surface of the interconnection layer.

Abstract: An apparatus for receiving an asynchronous data signal may include a clock generator that generates a clock signal having a frequency approximately equal to the bit rate of the asynchronous data signal. An edge detector may detect transitions of the asynchronous data signal. A dead-band detector may detect when a transition of the clock signal used to sample the data signal occurs within a predetermined amount of time of a transition of the asynchronous data signal so that data sampled on that transition of the clock signal may be invalid. The phase of the clock signal may be adjusted if the transition of the clock signal occurs within this predetermined amount of time.

Abstract: A PIN diode switch reduces energy loss and stray capacitance by providing first and second series connected PIN diodes between first and second biasing sources. A third biasing source is coupled to the common node between the two PIN diodes via a first resistive element. A second resistive element is coupled between the PIN diodes and the second biasing source. An electronic switch couples a negative voltage source via a current generating means to bias the PIN diodes to a conductive ON state. AC current is coupled to ground in the ON state via a dual path circuit that includes one of the PIN diodes and a low loss capacitive element connected to the PIN diode and second resistive element node in one path and the other PIN diode and the biasing source to ground in the other path. In the OFF state the biasing sources provide reverse bias voltages for minimizing the reverse capacitance of the PIN diodes and are connected in a way that minimizes stray capacitance that is connected to the switched element.

Abstract: An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch.

Abstract: A controlled capacitor system, which includes a capacitor element (C1) and a forward-biased diode element (D2) connected in series with the capacitor element (C1). The system is such that the diode element (D2) has a capacitance which is less than the capacitance of the capacitance of the capacitor element (C1) when the diode element (D2) is under zero bias. The capacitance of the diode element (D2) is controlled by varying the forward current (I2) through the diode (D2). The forward current (I2) acting to control the capacitance of the diode element is selected such that the capacitance of the diode element (D2) is smaller than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) is below a minimum value. The capacitance of the diode element (D2) is bigger than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) exceeds a maximum value.