Abstract: A bandgap reference circuit includes an amplifier, a first transistor, a second transistor, a third transistor, a first resistor, and a second resistor. The amplifier is configured to generate a bandgap voltage. The first transistor is coupled to the amplifier, and passes a first PTAT current. The second transistor is coupled to the amplifier, and passes a second PTAT current. The first resistor is coupled to the amplifier and the second transistor, and passes the second PTAT current to the second transistor. The third transistor is coupled to the amplifier, and passes a third PTAT current that bypasses the first resistor and the second transistor. The second resistor is coupled to the first transistor, the second transistor, and the third transistor, and passes the first PTAT current, the second PTAT current, and the third PTAT current.

Abstract: A circuit includes a sense amplifier, a first clamping circuit, a second clamping circuit, and a feedback circuit. The first clamping circuit includes first clamping branches coupled in parallel between the sense amplifier and a memory array. The second clamping circuit includes second clamping branches coupled in parallel between the sense amplifier and a reference array. The feedback circuit is configured to selectively enable or disable one or more of the first clamping branches or one or more of the second clamping branches in response to an output data outputted by the sense amplifier.

Abstract: An accelerator circuit is provided that includes an inverter chain having an input coupled to a data line and a sense circuit having inputs coupled to an output of the inverter chain and the data line. The sense circuit is configured to sense a rise toward a supply voltage on the data line or a fall toward a ground voltage on the data line. The accelerator circuit further includes an amplify circuit having inputs coupled to outputs of the sense circuit and an output coupled to the data line, where the amplify circuit is configured to amplify the data line toward the supply voltage or toward the ground voltage based on amplify enable signals output by the sense circuit.

Abstract: A power management approach for a mobile device includes comparing a battery provided power supply voltage to a reference voltage in order to generate an alarm signal. In response to the alarm signal the frequency of an operating clock applied to a system-on-chip is changed.

Abstract: The present invention relates generally to the field of semiconductor memories and in particular to memory cells comprising a static random access memory (SRAM) bitcell (100). Leakage current in the read path is reduced by connecting a read access transistor terminal either to GND or VDD during read access or write access and idle state. The SRAM cell inverters may be asymmetrical in size. The memory may comprise various boost circuits to allow low voltage operation or application of distinguished supply voltages.

Abstract: A charge-transfer transistor couples between a bit line and a sense node for a sense amplifier. During a read operation, a charge-transfer driver drives a gate voltage of the charge-transfer transistor to control whether the charge-transfer transistor conducts during a charge-transfer period. To assist the charge-transfer by the charge-transfer transistor, a first and second cross-coupled transistor are coupled between the bit line and a complement bit line.

Abstract: A voltage on-off detector includes an inverter between a first voltage source and a third voltage source providing a third voltage and having an input terminal that receives a second voltage, a first transistor having a gate that receives the second voltage, and a first source and a first drain between the third voltage source and a first node, a second transistor having a second gate that receives the third voltage, and a second source and a second drain between a second voltage source providing the second voltage and the first node, and an amplifier configured to output a first voltage from the first voltage source or a voltage on the first node based on or in response to an output of the inverter.

Abstract: A control device includes a control portion that controls a power supply portion that supplies power to a load based on received power received by a power receiving portion from a power transmitting device. In the case where the power receiving portion, after receiving a signal having a first frequency and a first duty from the power transmitting device, receives a signal having a second frequency that is different from the first frequency or a signal having a second duty that is different from the first duty, the control portion specifies an issued command based on a length of a reception period of the signal having the second frequency or the signal having the second duty.

Abstract: The present disclosure relates to circuit structures and, more particularly, to circuit structures which detect high speed and high precision characterization of VTsat and VTlin of FET arrays and methods of manufacture and use. The circuit includes a control loop comprised of a differential amplifier, a plurality of FET arrays, and at least one analog switch enabling selection between a calibration mode and an operation mode.

Abstract: A vehicle accumulator connected to a charging device is charged by controlling a configurable charge program executed by a control unit of the charge device. The configurable charge program is obtained from a charge program memory, so that the vehicle accumulator can be charged in an optimal manner with an individual charging characteristic.

Abstract: Systems, apparatuses, and methods for implementing a negative resistance circuit for bandwidth extension are disclosed. Within a feedback path of a differential signal path, capacitors are placed on the inputs and outputs of a fully differential amplifier connecting to the differential signal path. In one embodiment, a circuit includes a fully differential amplifier and four capacitors. A first capacitor is coupled between a first signal path and a non-inverting input terminal of the amplifier and a second capacitor is coupled between the first signal path and a non-inverting output terminal of the amplifier. A third capacitor is coupled between a second signal path and an inverting input terminal of the amplifier and a fourth capacitor is coupled between the second signal path and an inverting output terminal of the amplifier. The first and second signal paths carry a differential signal.

Abstract: A cell bias control circuit maximizes the performance of devices in the read/write path of memory cells (magnetic tunnel junction device+transistor) without exceeding leakage current or reliability limits by automatically adjusting multiple control inputs of the read/write path at the memory array according to predefined profiles over supply voltage, temperature, and process corner variations by applying any specific reference parameter profiles to the memory array.

Abstract: Aspects of a continuous-time memory cell circuit are described. In various embodiments, the memory cell circuit may comprise a memory cell, a current source coupled to the memory cell, and circuitry for programming the memory cell at an adaptive rate, based on a target voltage for programming, using a feedback loop between a gate terminal of the memory cell and a reference control input. Based on the circuitry for programming, the memory cell may be programmed according to various voltage and/or current references, by linear injection and/or tunneling mechanisms. According to various aspects, the circuitry for programming drives a memory cell to converge to a voltage target for programming within a short period of time and to a suitable level of accuracy.

Abstract: A video signal termination detection system includes an input configured to connect to a video driver that produces a video signal, an output configured to connect to a video receiver that operates with a signal type, a detection circuit connected between the input and the output and configured to detect the signal type of the video receiver and to output a detection signal, and a conversion circuit configured to receive the video signal from the video driver and to convert the video signal to the signal type if the video signal is different than the signal type.

Abstract: An object of the present invention is to provide a comparator which has an input voltage range larger than the case where a conventional offset cancel technique is used, while reducing an offset voltage. A comparator circuit includes: a comparator having an inverting input terminal, a non-inverting input terminal and an output terminal; a first switch having one terminal connected to the inverting input terminal and having the other terminal connected to the output terminal; a first capacitor which has one end connected with the inverting input terminal; a first signal input terminal which is another end of the first capacitor; and a second signal input terminal which selectively inputs either one of a fixed voltage and a comparing signal into the non-inverting input terminal.

Abstract: Embodiments of the present invention provide a comparator and an analog-to-digital converter. A sampling module, a pre-amplifying module, and a coupling module in the comparator obtain a third differential voltage signal according to a positive input signal and a negative reference signal, and obtain a fourth differential voltage signal according to a negative input signal and a positive reference signal. A latch that is in the comparator and formed by a first P-type field effect transistor, a second P-type field effect transistor, a third field effect transistor, a fourth field effect transistor, a first switch, and a second switch is directly cross-coupled through gates, and directly collects the third differential voltage signal and the fourth differential voltage signal to the gates, so as to drive the latch to start positive feedback.

Abstract: A circuit and method for dynamically changing trip point voltage in a sensing inverter circuit. In one embodiment, the sensing inverter circuit includes: (1) a base inverter circuit couplable to logic-high and logic-low voltage sources at respective inputs thereof and configured to transition an output thereof from a previous logic-level voltage to a present logic-level voltage based on a logic value of an input voltage received by the base inverter circuit, and (2) a feedback circuit associated with the base inverter circuit and configured to employ the previous logic-level voltage to decouple one of the logic-high and logic-low voltage sources from one of the inputs and thereby shift a trip voltage of the base inverter circuit toward the input voltage.

Abstract: An object of the invention is to reduce the power consumption of a semiconductor device that requires a plurality of reference potentials and a method of driving the semiconductor device. Disclosed is a semiconductor device having a potential divider circuit in which a potential supplied to a power supply line is resistively divided by resistors connected in series to the power supply line so that a desired potential is output through a switch transistor electrically connected to the power supply line. A drain terminal of the switch transistor is electrically connected to a gate terminal of a transistor provided in a circuit on the output side (or to one terminal of a capacitor) to form a node. The switch transistor has an off current low enough to hold the desired voltage in the node even when the potential is no more supplied to the power supply line.

Abstract: Provided is a sensor circuit which can amplify a sensor signal at high speed and with a high amplification factor without increasing the current consumption. The sensor circuit includes a primary amplifier for amplifying in advance a differential output signal which is a current signal of a sensor element, a secondary amplifier for amplifying the amplified differential output signal, a constant voltage generating circuit for maintaining a sensor element driving current to be constant, and a feedback circuit for feeding back a feedback signal to adjust an amplification factor. Most of the currents which pass through the primary amplifier are bias currents of the sensor element.

Abstract: Disclosed is a comparator including a switching element, a differential pair, and a positive feedback part, the positive feedback part including a first CMOS inverter and a second CMOS inverter, the first CMOS inverter including a first element for providing a potential difference between a first PMOS transistor and a first NMOS transistor, the second CMOS inverter including a second element for providing a potential difference between a second PMOS transistor and a second NMOS transistor, a higher potential side of the first element being connected to a gate of the second NMOS transistor, a lower potential side of the first element being connected to a gate of the second PMOS transistor, a higher potential side of the second element being connected to a gate of the first NMOS transistor, and a lower potential side of the second element being connected to a gate of the first PMOS transistor.

Abstract: According to one embodiment, a high performance buffer for use in a communications system includes first and second differential blocks. Each of the first and second differential blocks comprise one or more driving transistors for generating a driving current for a load of the high performance buffer, and a feedback path for adjusting the operation of the one or more driving transistors. The feedback path includes a feedback transistor for receiving a common mode bias voltage, wherein the common mode bias voltage depends at least in part on a threshold voltage of the feedback transistor. The feedback path includes a programmable resistor and capacitor to reduce out of band loop gain and the noise. The high performance buffer is configured to achieve a high linearity, low output impedance, and low noise, and is suitable for use as a pre-mixer buffer in a wireless communications system.

Abstract: Apparatus and methods for voltage comparison are provided. In one embodiment, a comparator includes a first input transistor having a gate configured to receive a first input voltage and a second input transistor having a gate configured to receive a second input voltage. The first and second input transistors can be used to compare the first input voltage to the second input voltage. Additionally, the comparator further includes a first Miller capacitor electrically connected to a drain of the first input transistor and a second Miller capacitor electrically connected to a drain of the second input transistor. Furthermore, first and second inverting amplification circuits are electrically connected across the first and second Miller capacitors, respectively, so as to increase the effective capacitance of the capacitors. The first and second Miller capacitors can be used to extend the comparator's integration time, thereby enhancing the performance of the comparator.

Abstract: A method including receiving an input signal; amplifying the input signal to generate an output signal using a cascade of a plurality of amplifier stages including a first amplifier stage and a last amplifier stage; generating a voltage signal by sensing the output signal in a noninvasive manner so that the sensing results in substantially no change to the output signal; generating a current signal from the voltage signal using a transconductance amplifier; and injecting the current signal into an output node of the first amplifier stage in a noninvasive manner so that the injecting results in substantially no change to an amplification function of the first amplifier stage.

Abstract: An auto-mute control circuit is disclosed. The auto-mute control circuit includes an analog amplifier, a detecting circuit and a direct-current (DC) level adjusting circuit. The analog amplifier receives an input signal and outputs a sensing voltage signal accordingly. The detecting circuit compares a common-mode voltage received with the sensing voltage signal received and outputs a comparison signal accordingly. The DC adjusting circuit receives the comparison signal and outputs an Up-Down digital signal, a fine tune digital signal and a rough tune digital signal, so that a sensing DC level is equal to the common-mode voltage.

Abstract: A comparator is provided having a voltage generator, having an output terminal for providing a reference voltage. The comparator also has a buffer unit, providing an output signal according to a first input signal and the reference voltage; wherein the voltage generator provides the reference voltage according to a second input signal, and the output signal represents a compare result of the first and second input signals.

Abstract: An apparatus for comparing differential input signal inputs is provided. The apparatus comprises a CMOS sense amplifier (which has having a first input terminal, a second input terminal, a first output terminal, and a second output terminal), a first output circuit (which has a first load capacitance), a second output circuit (which has a second load capacitance), and an isolation circuit. The isolation circuit is coupled between the first output terminal of the CMOS sense amplifier and the first output circuit and is coupled between the second output terminal of the CMOS sense amplifier and the second output terminal of the CMOS sense amplifier. The isolation circuit isolates the first and second load capacitances from the CMOS sense amplifier.

Abstract: This document discusses, among other things, apparatus and methods for controlling a hysteresis range of a voltage comparator. In an example, an apparatus can include an amplifier having a temperature dependency, a comparator configured to receive first and second currents and to provide an output voltage indicative of a hysteretic comparison of the first and second input voltages, wherein a range of hysteresis of the apparatus is controlled over a range of temperatures. In an example, the amplifier can be configured to receive first and second input voltages and to provide the first and second currents.

Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

Abstract: A comparator is provided. The comparator includes a voltage generator, a buffer unit and a threshold control loop. The voltage generator has an output terminal for providing a reference voltage according to a constant current. The buffer unit provides an output signal according to a first input signal and a bias signal. The threshold control loop provides the bias signal to the buffer unit according to a second input signal, so as to regulate a transition threshold of the buffer unit to close to the second input signal. The output signal represents a compare result of the first and second input signals. The buffer unit and the threshold control loop are powered by the reference voltage.

Abstract: The present invention provides a high-side signal sensing circuit. The high-side signal sensing circuit comprises a signal-to-current converter, a second transistor and a resistor. The signal-to-current converter has a first transistor generating a mirror current in response to an input signal. The second transistor cascaded with the first transistor is coupled to receive the mirror current. The resistor generates an output signal in response to the mirror current. Wherein, the level of the output signal is corrected to the level of the input signal.

Abstract: A single-ended to differential buffer circuit is is disclosed, adapted to couple at least an input analog signal to a receiving circuit. The buffer circuit comprises an output section comprising a differential amplifier having a first and a second input, a first and a second output. The buffer circuit further comprises an input section comprising a first and a second switched capacitor, each adapted to sample said input analog signal and having a first side and a second side, the first sides of the first and second switched capacitors being controllably connectable/disconnectable to/from said first and second outputs respectively. In the buffer circuit the second sides of said first and second switched capacitors are controllably connectable/disconnectable to/from said first and second inputs of the differential amplifier respectively.

Abstract: Determining that a first input of a sense amplifier is to receive information based upon a state of a storage cell during a first portion of a read cycle, and determining that a conductance at the first input is substantially equal to a conductance at a second input of the sense amplifier during the first portion. A plurality of NAND string modules are connected to a global bit line of a memory device that includes a memory column where a plurality of NAND strings and a buffer are formed.

Abstract: A comparator is provided. The comparator includes a voltage generator, a buffer unit and a threshold control loop. The voltage generator has an output terminal for providing a reference voltage according to a constant current. The buffer unit provides an output signal according to a first input signal and a bias signal. The threshold control loop provides the bias signal to the buffer unit according to a second input signal, so as to regulate a transition threshold of the buffer unit to close to the second input signal. The output signal represents a compare result of the first and second input signals. The buffer unit and the threshold control loop are powered by the reference voltage.

Abstract: A comparator (10) includes a first input transistor (M0) having a drain coupled to a gate and drain of a first diode-connected transistor (M2) and a gate of a first current mirror output transistor (M4), and a second input transistor (M1) having a drain coupled to a gate and drain of a second diode-connected transistor (M3) and a gate of a second current mirror output transistor (M5). Sources of the first and second current mirror output transistors are connected to a supply voltage (VDD). Gates of the first and second input transistors are coupled to first (VIN?) and second (VIN+) input signals, respectively. Sources of the first and second diode-connected transistors are coupled to drains of the first and second current mirror output transistors, respectively. A latch circuit (M8,M9) is coupled to the drains of the first and second current mirror output transistors.

Abstract: A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage.

Abstract: A limiting amplifier and method are provided. In one implementation an apparatus includes a plurality of amplifier stages including a first amplifier stage and a last amplifier stage configured in a cascade arrangement, and a transconductance amplifier, wherein the first amplifier stage is configured to receive an input signal; the last amplifier stage outputs an output signal; the transconductance amplifier is configured receive a voltage signal from the last amplifier stage via a first resistor; and the transconductance amplifier is configured to output a current signal to an output node of the first amplifier stage via a second resistor in a negative feedback manner.

Abstract: A bulk-driven current-sense amplifier and an amplifier operating method are disclosed. The bulk-driven current-sense amplifier includes a differential amplifier, a first driver, and a second driver. The first driver is coupled to the differential amplifier, and a first node is formed at a connectivity segment of the first driver. The second drive is coupled to the differential amplifier, and a second node is formed at a connectivity segment of the second driver. When a first switch of the first driver and a second switch of the second driver are turned on, the differential amplifier charges the first node and the second node. When the charging is completed, the first node and the second node respectively have a different stabilized potential according to currents separately flowing through a first memory unit of the first driver and a second memory unit of the second drive, and the differential amplifier generates a voltage.

Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

Abstract: A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage.

Abstract: There is provided an analog circuit having improved response time. An analog circuit having improved response time may include: a low level limiter converting a signal having a lower level than a predetermined reference level into a signal having a predetermined non-low level higher than the predetermined reference level; and an analog circuit section amplifying the signal from the low level limiter into a signal having a predetermined level.

Abstract: A test driver transmitter drives a test signal through a resistive termination circuit to a first pin to test components on a board during a boundary scan test operation. A test receiver receives the test signal through a second pin and a pass gate coupled to the second pin during the boundary scan test operation. A test signal is transmitted to the test receiver during loopback operation through a loopback circuit.

Abstract: A differential amplifier includes an amplification unit and a feedback unit. The amplification unit amplifies a voltage difference between a first input signal and a second input signal and outputs a first output signal and a second output signal. The feedback unit amplifies a voltage difference between a first feedback signal based on the first output signal and a second feedback signal based on the second output signal.

Abstract: A latched comparator circuit. The latched comparator circuit comprises a first and a second output terminal for outputting a first and a second output voltage, respectively, of the latched comparator circuit. Furthermore, the latched comparator circuit comprises a cross-coupled pair of transistors operatively connected between the first and the second output terminal for providing a positive feedback in the latched comparator circuit. In addition, the latched comparator circuit comprises a reset terminal for receiving a reset signal and reset circuitry arranged to balance the first and the second output voltage during a first phase of the reset signal and allow a voltage difference to develop between the first and the second output voltage during a second phase of the reset signal.

Abstract: A differential sense amplifier can perform data sensing using a very low supply voltage.

Abstract: A sense amplifier circuit is provided with a first transistor arrangement comprising a first n-type field effect transistor (NFET) having a respective body node, and a second transistor arrangement comprising a second NFET having a respective body node. The second transistor arrangement is electrically coupled to the first transistor arrangement, and the body node of the first NFET is electrically coupled to the body node of the second NFET. The sense amplifier circuit also includes or cooperates with a voltage condition selector that is electrically coupled to the body node of the first NFET and to the body node of the second NFET. The voltage condition selector is configured to assert one of a plurality of voltage conditions at the body node of the first NFET and at the body node of the second NFET.

Abstract: During first portion of a first read cycle determining that a first input of a sense amplifier is to receive information based upon a state of a storage cell during a first portion of a read cycle, and determining that a conductance at the first input is substantially equal to a conductance at a second input of the sense amplifier during the first portion. A plurality of NAND string modules are connected to a global bit line of a memory device that includes a memory column where a plurality of NAND strings and a buffer are formed.

Abstract: Described herein are methods and apparatuses for achieving a desired duty cycle on an output of a PLL. According to one embodiment, a method is described, including generating a single ended clock signal from a differential common mode clock signal using a limiting differential amplifier, wherein the single ended clock signal has a duty cycle, generating a differential bias current signal in response to the duty cycle of the single ended clock signal, and correcting the duty cycle of the single ended clock signal to a desired duty cycle by applying the differential bias current signal to the limiting differential amplifier.

Abstract: A method and circuit arrangement is provided for controlling switching transistors of an integrated circuit, with a bridge circuit and with a control unit, which is designed and/or has a program so that the control unit is designed as a measuring device and measures a bridge voltage of the bridge circuit, outputs an adjusting signal for adjusting a component of a bridge circuit, and outputs a control signal for activating the switching transistors. When the bridge circuit) has a branch with a resistor network and a transistor connected in series, and the control unit is designed and/or has a program so that the adjusting signal for adjusting a resistance value of the resistor network is switchable as the component dependent on the bridge voltage.

Abstract: A method and circuit for attenuating positive feedback in a comparator in one embodiment includes an amplifier configured to compare a first input signal with a second input signal and to provide an output based upon the comparison, a non-linear function with a first input operably connected to an output of the amplifier, and a feedback loop operably connected to the output of the non-linear function and to a second input of the non-linear function, the feedback loop including a feedback limiting circuit configured to attenuate a feedback signal to the second input of the non-linear function.

Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.