Abstract: A method to use RSs for per-user elevation beamforming is described. An eNB sends, to a UE, an indication of which RSs in a plurality of RSs sound in the elevation dimension and which RSs in the plurality of RSs sound in the azimuthal dimension. Then, the eNB sends, to the UE, the plurality of RSs using a plurality of antenna. The UE separates the plurality of RSs into the first portion and the second portion based at least in part on the indication and sends elevation and azimuthal feedback based on the received RSs to the eNB. The eNB determines beamforming weights for the plurality of antenna based at least in part on the elevation feedback and the azimuthal feedback. Apparatus and computer readable media are also described.

Abstract: An ultra low-k dielectric material layer is formed on a semiconductor substrate. In one embodiment, a grid of wires is placed at a distance above a top surface of the ultra low-k dielectric material layer and is electrically biased such that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. In another embodiment, a polymeric conductive layer is formed directly on the ultra low-k dielectric material layer and is electrically biased so that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. By maintaining the total electron emission coefficient at 1.0, charging of the substrate is avoided, thus protecting any device on the substrate from any adverse changes in electrical characteristics.

Abstract: Various apparatuses and methods for a vacuum electronic device are disclosed herein. In one embodiment, a vacuum electronic device includes a vacuum housing, an array of slow wave structures inside the vacuum housing sharing a common electron beam tunnel, an electron beam input port at a first end of the common electron beam tunnel, and an electron beam output port at a second end of the common electron beam tunnel.

Abstract: Various apparatuses and methods for a vacuum electronic device are disclosed herein. In one embodiment, a vacuum electronic device includes a vacuum housing, an array of slow wave structures inside the vacuum housing sharing a common electron beam tunnel, an electron beam input port at a first end of the common electron beam tunnel, and an electron beam output port at a second end of the common electron beam tunnel.

Abstract: The present invention is directed to an electron beam crossbar switch for interconnection between communication units. The crossbar switch includes an array of electrically charged particle emitter source devices with an input connected to a slow wave structure coupled to the emitter source. An array of detectors is positioned relative to the array of emitter devices for receiving charged particles from various of the emitter devices. X and y deflection means are positioned adjacent each of the emitters for directing the charged particles from each of the emitters to at least one of the detectors to provide more signal output and a reduction in deflection accuracy.

Abstract: RF field is sensed to produce an incoming voltage that drives a microarray of electron guns in a sweep pattern towards a detector array. The electron guns emit a beam current that may amplify the incoming voltage signal, and the detector material may be selected to amplify the beam current at the detector, for example, by avalanche and/or cascade in a Schottky material, to provide a low current, high gain amplification. The microarrays may be arranged in various combinations to produce successive amplifications, frequency multipliers, transmit-receive amplifiers, crossbar switches, mixers, beamformers, and selective polarization devices, among other such devices.

Abstract: RF field is sensed to produce an incoming voltage that drives a microarray of electron guns in a sweep pattern towards a detector array. The electron guns emit a beam current that may amplify the incoming voltage signal, and the detector material may be selected to amplify the beam current at the detector, for example, by avalanche and/or cascade in a Schottky material, to provide a low current, high gain amplification. The microarrays may be arranged in various combinations to produce successive amplifications, frequency multipliers, transmit-receive amplifiers, crossbar switches, mixers, beamformers, and selective polarization devices, among other such devices.

Abstract: A left-handed nonlinear transmission line system has multiple nonlinear capacitors connected in series between input and output terminals and multiple inductances connected in parallel between the nonlinear capacitors and a return conductor extending between the input and output terminals. The nonlinear capacitors have a capacitance characteristic that changes with the voltage applied across the capacitors, such as a capacitance that decreases with increasing voltage. A radio frequency signal source is coupled to the input terminals and provides power at a selected drive frequency. Depending on the frequency of the drive signal with respect to the Bragg cutoff frequency of the nonlinear transmission line, the output signal may include a strong signal component at the third harmonic of the input drive signal frequency, components at higher harmonics, or components at fractional frequencies of the input drive signal frequency.

Abstract: A slow wave structure for coupling RF energy with an electron beam comprises a co-propagating RF section including a plurality of pins having a uniform separation from the plane of an electron beam axis. An output aperture is positioned a half wavelength from a reflection section comprising a change in depth of the pintles, such that RF energy reflected by the change in pintle depth is added to the RF energy traveling with the electron beam. One or more rows of pintles are removed in the region of the output aperture to enhance coupling to the output aperture. The device may include a beam shaper for shaping the electron beam to surround the pintles, and the beam shaper and pintles may share common channels which are longitudinal to the electron beam axis. The slow wave structure may operate in forward and backward wave modes, and may be used in conjunction with other structures to form amplifiers and oscillators.