Abstract: Disclosed are a Doherty power amplifier (2), a controlling method and a device. In the Doherty power amplifier (2), the even order harmonic components can be fed to the drain of the amplifier to realize even order harmonic modulation. The even order harmonic components have higher power level than the odd order harmonic components, therefore, higher efficiency could be achieved.

Abstract: A passive device may include an inductor having interconnected trace segments. The passive device may also include parallel plate capacitors. Each of the plurality of parallel plate capacitors may have a dielectric layer between a pair of conductive plates. The parallel plate capacitors may not overlap more than one of the interconnected trace segments.

Abstract: Nanowire-based mechanical switching devices are described. For example, a nanowire relay includes a nanowire disposed in a void disposed above a substrate. The nanowire has an anchored portion and a suspended portion. A first gate electrode is disposed adjacent the void, and is spaced apart from the nanowire. A first conductive region is disposed adjacent the first gate electrode and adjacent the void, and is spaced apart from the nanowire.

Abstract: An in-line waveguide divider divides power of an incoming high-frequency signal among openings. Amplification boards disposed on a base are provided for respective openings and are each connected in parallel with one another to the in-line waveguide divider. An in-line waveguide combiner includes openings formed correspondingly to the amplification boards, and is connected to the amplification boards. An electrically conductive amplifier cover includes walls formed to provide isolation between circuits of the amplification boards continuously from the in-line waveguide divider to the in-line waveguide combiner, and the entire surface of the amplification boards at the in-line waveguide combiner side is covered with the electrically conductive amplifier cover except openings and openings. Each of the amplification boards includes a waveguide-to-microstrip transition corresponding to the opening, an amplifier element, and a microstrip-to-waveguide transition corresponding to the opening.

Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: A modular electronic system for receiving, processing or forwarding information. Devices comprise a housing including flat electromagnetically effective transfer elements in or on an insulating housing wall and at least one circuit board including flat electromagnetically effective transfer elements and electronic components.

Abstract: An integrated circuit arrangement includes a flange, a transistor die, and a first conducting element defining a lead. The flange includes a conducting material and the transistor die is disposed on a surface of the flange. The first conducting element is electrically connected to the transistor die via connecting elements to allow current flow from the transistor die. The flange defines return current paths allowing the current flow via the connecting elements and the lead to return to the transistor die. The flange includes one or more reduced thickness portions that are configured to limit the return current paths and control current flow passing through the flange to the transistor die.

Abstract: An amplifier includes: a package which includes a pair of edge portions; an input terminal which is provided in the edge portion; output terminals which are provided in the edge portion; a first-stage FET chip which includes an input port directly connected to the input terminal by a bonding wire; a first-stage terminal which is provided in the edge portion and is directly connected to an output port of the first-stage FET chip by a bonding wire; a second-stage terminal which is provided in the edge portion; a second-stage FET chip which includes an output port directly connected to output terminals and by a bonding wire; and an impedance matching capacitor element of which one electrode is connected to the second-stage terminal and the input port of the second-stage FET chip.

Abstract: In general, an RF power amplifier comprises a controller, a driver, a splitter, a final stage, and a combiner coupled together to function as the RF power amplifier. One or more of the above components are arranged on one or more motherboards, e.g., a printed circuit board (PCB). A heat sink defines a base of the RF power amplifier, and in some embodiments includes at least two grooves formed therein, wherein the electrical components of the splitter and electrical components of the controller fit within one or more of the grooves so that these components can substantially disposed within the heat sink. In some embodiments, a power rail is also provided, and is also disposed substantially within the heat sink. The power rail groove of the heat sink and the carrier of the final stage provide an EMI shield of the power rail.

Abstract: An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.

Abstract: The disclosure relates to an electronic circuit for reducing leakage of radio frequency signals from a power amplifier of a wireless communication device is provided.

Abstract: The invention relates to high power radiofrequency amplifiers, in particular to amplifiers having output impedance matching networks, exemplary embodiments of which include a radiofrequency amplifier having an active device mounted on a substrate within a device package, the amplifier having an output impedance matching network comprising a high pass network provided at least partly on the active device and a low pass network having a first inductive shunt connection between an output of the active device and a first output lead and a second inductive shunt connection between the output of the active device and a second output lead, wherein part of the second output lead forms an inductance contributing to the inductance of the low pass network.

Abstract: The disclosure relates to an electronic circuit for reducing leakage of radio frequency signals from a power amplifier of a wireless communication device is provided.

Abstract: A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

Abstract: The disclosure relates to a printed circuit board (PCB) for an electronic circuit for a power amplifier of a wireless communication device. The PCB comprises: a substrate; a ground reference in the substrate; first through fourth locations and first and second pads in the substrate; and first and second electrical tracks in the substrate. The locations are for components for the PCB, including a 0 ohm component, and pads connect tracks to the components. The first pad is for a high band power input terminal of the amplifier. The first track connects the first pad to the second location. The third location is in the first track for placement of a first capacitor in a circuit between the first pad and ground. The second pad is for an output terminal of the amplifier. The second track connects the second pad to an output stage circuit of the amplifier.

Abstract: A circuit includes a plurality of integrated circuits or dies having corresponding circuits, the plurality of integrated circuits or dies include a first plurality of integrated circuits or dies having corresponding millimeter wave interfaces and a second plurality of integrated circuits or dies having corresponding inductive interfaces. The first plurality of integrated circuits or dies communicate first signals therebetween via the corresponding millimeter wave interfaces and the second plurality of integrated circuits or dies communicate second signals therebetween via the corresponding inductive interfaces.

Abstract: The disclosure relates to an electronic circuit for attenuating harmonics in a power amplifier. The circuit comprises: a printed circuit board (PCB); a first electrical track in the PCB providing a connection from a high band power input terminal of the amplifier to a battery terminal; a first capacitor connected to the first track, the high band power input terminal and a ground reference in the PCB; a first high filter choke connected to the first track and to the terminal; a second electrical track connected to a low band power input terminal of the amplifier; a circuit implemented on the PCB and connected to an output terminal of the amplifier for an output signal from the amplifier, comprising a first filter and a low pass filter, the first filter connected to a 0 ohm resistor which is connected to the low pass filter.

Abstract: The disclosure relates to an electronic circuit for attenuating harmonics in a power amplifier. The circuit comprises: a printed circuit board (PCB); a first electrical track in the PCB providing a connection from a high band power input terminal of the amplifier to a battery terminal; a first capacitor connected to the first track, the high band power input terminal and a ground reference in the PCB; a first high filter choke connected to the first track and to the terminal; a second electrical track connected to a low band power input terminal of the amplifier; a circuit implemented on the PCB and connected to an output terminal of the amplifier for an output signal from the amplifier, comprising a first filter and a low pass filter, the first filter connected to a 0 ohm resistor which is connected to the low pass filter.

Abstract: Circuits, systems, and methods are disclosed for controlling multiple antenna receive paths in a wireless communication device. In some embodiments, the circuit may include a pair of receiving antennas, a first receive path including a VCO coupled to receive a PLL signal and a first mixer coupled to receive a first signal from the VCO and a signal from one of the antennas, and a second receive path integrated separately from the first receive path including a second mixer coupled to receive a second signal from the VCO and a signal from the other antenna. By utilizing the output of the VCO to tune the first and second mixers in the first and second receive paths to the same phase and frequency, control of the multiple antenna receive paths may be optimized.

Abstract: The disclosure relates to a system and method for attenuating harmonics in a power amplifier. An electronic circuit for reducing leakage of radio frequency signals from a power amplifier of a wireless communication device is provided. The circuit comprises: a printed circuit board (PCB) having the power amplifier mounted on the PCB; a first electrical track in the PCB connecting to a power input terminal of the power amplifier; and a first capacitor connected to the first electrical track and a ground reference in the PCB, the first capacitor reducing transmission of radio frequency signals from the input terminal of the power amplifier.

Abstract: A harmonic suppression device includes a multilayer printed circuit board (PCB). The multilayer PCB includes a first layer, a second layer, and a third layer. The third layer is connected to the ground. The first layer is configured with a power amplifier, an input microstrip, a voltage divider microstrip, and an output microstrip. The power amplifier is operable to amplify radio frequency (RF) signals input using the input microstrip and to output the amplified RF signals using the output microstrip. The second layer is configured with a first microstrip and a second microstrip. One end of each of the first and second microstrips is connected to an alternative one of the first layer and the third layer by vias, and the other ends of the first and second microstrips are unattached so as to suppress harmonics on the power amplifier.

Abstract: Circuits, systems, and methods are disclosed for controlling multiple antenna receive paths in a wireless communication device. In some embodiments, the circuit may include a pair of receiving antennas, a first receive path including a VCO coupled to receive a PLL signal and a first mixer coupled to receive a first signal from the VCO and a signal from one of the antennas, and a second receive path integrated separately from the first receive path including a second mixer coupled to receive a second signal from the VCO and a signal from the other antenna. By utilizing the output of the VCO to tune the first and second mixers in the first and second receive paths to the same phase and frequency, control of the multiple antenna receive paths may be optimized.

Abstract: The disclosure relates to a system and method for attenuating harmonics in a power amplifier. An electronic circuit for reducing leakage of radio frequency signals from a power amplifier of a wireless communication device is provided. The circuit comprises: a printed circuit board (PCB) having the power amplifier mounted on the PCB; a first electrical track in the PCB connecting to a power input terminal of the power amplifier; and a first capacitor connected to the first electrical track and a ground reference in the PCB, the first capacitor reducing transmission of radio frequency signals from the input terminal of the power amplifier.

Abstract: The disclosure relates to a system and method for attenuating harmonics in output signals. In the system, an electronic circuit for reducing leakage of radio frequency signals from a power amplifier of a wireless communication device is provided. The circuit comprises: a printed circuit board ‘PCB’ having the power amplifier mounted on the PCB; a first electrical track in the PCB connecting to a power input terminal of the power amplifier; and a first capacitor connected to the first electrical track and a ground reference in the PCB, the first capacitor reducing transmission of radio frequency signals from the input terminal of the power amplifier.

Abstract: The disclosure relates to a system and method for attenuating harmonics in output signals. In the system, an electronic circuit for reducing leakage of radio frequency signals from a power amplifier of a wireless communication device is provided. The circuit comprises: a printed circuit board ‘PCB’ having the power amplifier mounted on the PCB; a first electrical track in the PCB connecting to a power input terminal of the power amplifier; and a first capacitor connected to the first electrical track and a ground reference in the PCB, the first capacitor reducing transmission of radio frequency signals from the input terminal of the power amplifier.

Abstract: The invention relates to a system and method for attenuating harmonics in output signals. In the system, an electronic circuit for reducing harmonics of an output signal from a power amplifier in a transmission circuit for a wireless communication device is provided. The circuit comprises: a printed circuit board (PCB); a power amplifier for generating an output signal; and a circuit implemented on the PCB connected to an output terminal of the power amplifier for the output signal. The circuit comprises a first filtering stage; a delay element; and a harmonic filter. The delay element is located between the harmonic filter and the output terminal and the delay element provides a timing delay in the output signal through at least one 0 ohm-rated component. Also, the harmonic filter is a low pass filter having a frequency cut-off point that attenuates first order harmonics of the output signal.

Abstract: A method for implementing a layout of an integrated circuit containing an OP (operational amplifier) is disclosed. The method includes constructing an output path connecting an output terminal of the OP to an output pad of the OP; and constructing a feedback path connecting an input terminal of the OP to an element of the OP, the element lying in an area covering the output pad, in which a minimum distance between the element and the output pad is less than a tenth of length of the feedback path. The present invention also provides an integrated circuit device produced through the method.

Abstract: A semiconductor power device comprises a flange, a die having a gate, a source, and a drain. The source is electrically coupled to the flange. A drain matching circuit is located on the flange having an input, an output and a bias input, the input being coupled with the drain. The drain matching circuit comprises an inductor coupled in series with a first capacitor between the drain and flange and a second capacitor arranged next to the first capacitor, wherein the second capacitor is coupled with the bias input and in parallel with the first capacitor through a second inductor. An input terminal is mechanically coupled to the flange and electrically coupled with the gate, an output terminal is mechanically coupled to the flange and electrically coupled with the output of the drain matching circuit, and an input bias terminal is mechanically coupled to the flange and electrically coupled with the drain through the bias input.

Abstract: An integrated power amplifier (PA) module formed on a substrate includes a first cluster of transistor cells positioned in a first portion of the substrate; a second cluster of transistor cells positioned in a second portion of the substrate and spaced apart from the first portion; and a combiner coupled to the first and second clusters to combine the output of the first and second clusters.

Abstract: Parasitic coupling effects between RF or microwave transistors provided in a common package are compensated by connecting one or more capacitors between the transistors. By connecting the capacitor(s) at a location that corresponds to the site of the coupling, the compensation is effective over a wide frequency band. This coupling-compensation makes it feasible to provide, in a common package, RF or microwave transistors intended to operate in quadrature, thereby improving performance matching and operating efficiency of the overall device.

Abstract: An amplifier, in particular for RF-applications, comprises a circuit board (2), at least one amplifier stage with at least one transistor package (8) arranged on the circuit board (2), and a feedback path (12) around the at least one transistor package (8), said feedback path (12) comprising a feedback element (15) with at least one capactive (C) element for blocking the flow of direct current through the feedback path (12) and preferably further comprising at least one inductive (L) and/or resistive element (R). In order to reduce negative effects on the performance of the amplifier due to long printed feedback lines, the feedback path (12) in an amplifier according to the invention is formed of a feedback bridge (9) comprising two feedback lines (13, 14) extending out of the plane of the circuit board (2) from two contact flags (10, 11) of the transistor package (8), and the feedback element (15) bridging over the transistor package (8) between the two feedback lines (13, 14).

Abstract: A power transistor, having: a semiconductor having an electrode formed thereon, wherein the electrode comprises a plurality of interdigitated transistors each having input and output terminals; a first output blocking capacitor having a first terminal electrically coupled to the output terminals of the interdigitated transistors of the semiconductor and a second terminal electrically coupled to ground; and a second output blocking capacitor having a first terminal electrically coupled to the first terminal of the first output blocking capacitor and a second terminal electrically coupled to ground.

Abstract: A radio frequency (RF) module includes a first substrate adapted to receive passive circuits; and a second substrate adapted to receive active circuits, the first and second substrates electrically coupled through pads positioned on opposing surfaces of the first and second substrate.

Abstract: An inductor element containing circuit board of the present invention comprises a plurality of conductive layers, and a conductor having an inductor function (inductor conductor segment) in one or more of the conductive layers, wherein at least part of the inductor conductor segment is made thicker than other conductors disposed within the circuit board. The at least part of the inductor conductor segment extends through an insulating layer disposed between the conductive layers, or is embedded in the insulating layer, wherein the part of the inductor conductor segment has a thickness one-half or more the thickness of the insulating layer. A power amplifier module of the present invention comprises the multi-layer circuit board, a semiconductor amplifier fabricated in the multi-layer circuit board, and an impedance matching circuit coupled to the output of the semiconductor amplifier. The impedance matching circuit has a portion thereof formed of the inductor conductor segment.

Abstract: The present invention realizes the miniaturization of a semiconductor module. The semiconductor module includes a module board having external electrode terminals and a heat radiation pad over a lower surface thereof, a first semiconductor chip incorporating an initial-stage transistor of a high frequency power amplifying device therein, a second semiconductor chip incorporating a next-stage transistor and a final-stage transistor therein, and an integrated passive device which constitutes a matching circuit. At least one of the first semiconductor chip and the second semiconductor chip and the integrated passive device are mounted over an upper surface of the module board in an overlapped manner.

Abstract: A portable power amplifier includes portable encapsulating cases, a printed board incorporated in those encapsulating cases, and a power amplifying device mounted on this printed board. An antenna switch and an antenna are provided near the power amplifying device, which is connected to those components in a pattern. This structure improves heat dissipation efficiency of the portable power amplifier.

Abstract: A RF amplifier device (22) including an amplifier element (24) compensated by a compensating circuit (26, 28) with respect to its output capacitance and frequency decoupled from its power supply (26), wherein the decoupling circuit is directly connected to the compensating circuit (26, 28) and a RF amplifier device including an amplifier element (56, 80) and a compensating circuit comprising an internal shunt inductor having a compensating inductance (58, 60, 62) and a compensating capacitance (64, 92) and arranged in parallel to a terminal of the amplifier element (56, 80) to compensate a terminal capacitance of the amplifier element (56, 80), and a decoupling and power supply lead (76, 98) which is connected to the compensating capacitance (64, 92) and/or a decoupling circuit (100) and/or a combination of the compensating capacitance and the decoupling circuit (130) and a module thereof and a method for decoupling the mentioned RF amplifier device.

Abstract: A broadband driver amplifier module is made using an arrangement of MMICS and microstrip to provide inline rf connectors for the input and output and a small package size. The input and output microstrips incorporate a microstrip portion which is at an angle to the axis of the input connector providing an offset from the axis of the input connector. There is provided at least one MMIC extending from the input microstrip at the offset across the input connector axis and having an output on the other side of the axis. This arrangement provides for an overall zigzag configuration which reduces the axial length of the package while maintaining inline input and output connectors. The invention further includes novel arrangements for MMIC mounting and d.c. blocks used in the amplifier.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: An RF generating system operates with high efficiency to supply RF output power to a plasma load. The RF generating system is capable of modulating the RF output power at frequencies up to the frequency of the RF output power while maintaining high efficiency operation. Broadband frequency modulation of the RF output power suppresses instabilities thereby minimizing unstable behavior of the plasma load.

Abstract: A radio frequency power amplifier has first and second amplifier transistors. The first and second amplifier transistors have a common element thereof electrically interconnected with a common bus. A forked conductor having two legs thereof electrically connected to the common bus, each leg having a distal end proximate one of the first and second amplifier transistors. The common bus and the forked conductor are generally symmetric about an axis about which the first and second amplifier transistors are symmetrically disposed.

Abstract: A radio frequency (RF) power amplifier module integrated with a power control loop is formed on a print circuit board and packaged within a mold. In order to minimize a whole size of the RF power amplifier module, capacitors with a smaller size are employed to substitute for prior art ceramic directional couplers. In addition to the capacitors, RF power amplifiers, matching circuits, power detectors, and a power control specific application integrated circuit are all integrated on the print circuit board without individual packages. Furthermore, the RF power amplifiers and the power detectors are formed on a common semiconductor substrate. Therefore, the RF power amplifier module has advantages of a small size and minimum parasitic impedance.

Abstract: A molecular memory integrated circuit in accordance with one embodiment of the present invention can include a set of actuators capable of moving a platform. The platform can contain one of a memory device and a Molecular Array Read/Write Engine (MARE) having a cantilever system including at least one cantilever tip. When the memory device platform is brought within close proximity of the MARE platform, the set of actuators can position the at least one cantilever tip to a specific location on the memory device. The at least one cantilever tip can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. In other embodiments, a plurality of actuators is capable of moving a plurality of platforms.

Abstract: A radio frequency (RF) power amplifier module integrated with a power control loop is formed on a print circuit board and packaged within a mold. In order to minimize a whole size of the RF power amplifier module, capacitors with a smaller size are employed to substitute for prior art ceramic directional couplers. In addition to the capacitors, RF power amplifiers, matching circuits, power detectors, and a power control specific application integrated circuit are all integrated on the print circuit board without individual packages. Furthermore, the RF power amplifiers and the power detectors are formed on a common semiconductor substrate. Therefore, the RF power amplifier module has advantages of a small size and minimum parasitic impedance.

Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.

Abstract: Conventional broadband RF power amplifiers use a ¼ wavelength transmission line to decouple the gate bias DC source from the gate circuitry and a second ¼ wavelength transmission line to decouple the drain bias DC source from the drain circuitry, taking up considerable printed circuit board space. A novel broadband RF power amplifier uses a transistor with separate terminals for injection of gate bias and drain bias DC sources, eliminating the need for ¼ wavelength transmission lines, thereby freeing up space and allowing higher density packaging. The power amplifier transistor can be implemented with a single die circuit or multiple die circuits operating in parallel.

Abstract: A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves.

Abstract: A radio frequency amplifier includes a waveguide filter positioned between a first and a second amplifier circuit, which reduces the distortion between the amplifier circuits. The waveguide includes a main body having a cavity.

Abstract: This invention provides a terminal arrangement for an electrical device. The electrical device includes a ground terminal on its outer surface that has a relatively large surface area. The electrical device also includes a plurality of contact terminals that are arranged around the periphery of the outer surface. Preferably, these terminals are generally equally-spaced from each other. Where the outer surface is rectangular, a terminal is normally located in each corner and one or more terminals are located along a side between the corners. The electrical device can be, for instance, a power amplifier. In such an arrangement, the amplifier is used to receive a radio frequency signal at a first side of the outer surface and output an amplified radio frequency signal from a second side of the outer surface. The power used to operate the amplifier is provided by power supply signals that typically enter at outer surface corners.

Abstract: A node for commonly supplying a ground potential in an amplification circuit (MMIC11) is formed. The input and output system ground surfaces of a printed wiring board (PWB) on which the amplification circuit (MMIC11) is to be mounted are electrically separated from each other on the printed wiring board (PWB). Since no ground pattern is present on the amplification circuit (MMIC11), the ground node of the amplification circuit (MMIC11) serves as a means for supplying a true ground potential. While a compact package is realized by preventing an increase in number of leads, oscillation is prevented, so a high gain can be realized.