Abstract: An oscillator for very high microwave or millimeterwave frequencies employs a pair of negative-resistance semiconductive devices, each mounted in its own resonant cavity. The two cavities are coupled together by an iris in their common wall. An output waveguide is coupled symmetrically to both sides of the common wall to load both cavities equally. An adjustable mode-control element projects into the cavity to the near vicinity of one of the devices to induce the oscillator to start in the desired mode. Additional dielectric or metallic tuners in the cavities provide a wide variation of frequency.

Abstract: Disclosed are new high frequency ion implanted passivated semiconductor devices and a planar fabrication process therefor wherein initially an ion implantation and PN junction passivation mask is formed on one surface of a semiconductor crystal. Thereafter, one or more conductivity type determining ion species are implanted through an opening in the mask and into the semiconductor crystal to form active device regions including a PN junction, all of which are bounded by an annular, higher resistivity unimplanted region of the semiconductor crystal. The PN junction thus formed terminates beneath the implantation and passivation mask, and the semiconductor crystal is then annealed to remove ion implantation damage and to electrically activate the ion implanted regions, while simultaneously controlling the lateral movement of the PN junction beneath the passivation mask.

Abstract: A microwave element is disclosed that is fabricated from a dielectric material wherein the antenna, the iris, and a microwave cavity portion are formed generally from a single piece of relatively high dielectric constant material. The microwave cavity portion is converted into an actual microwave resonant cavity by covering the microwave cavity portion with a conductive material.

Abstract: A bulk semiconductor oscillator subassembly is carried on a support pin. The oscillator assembly includes a semiconductor diode mounted on the pin with one terminal connected thereto. The other terminal is connected to one end of an input coupling loop which has its other end connected to the pin through a by-pass capacitor. Biasing voltages are applied to the diode via a lead connected to the loop. The loop is coupled to a Yttrium Iron Garnet (YIG) sphere which serves as a resonator. The resonant frequency of the resonator is tuned by adjusting a DC magnetic field applied thereto. The output is obtained by an output loop which is located orthogonally with respect to the input loop and coupled to the YIG whereby the input and output loops are coupled through the YIG resonator.

Abstract: A solid state klystron comprising a switching regulator, power source, tuning adapter, and solid state oscillator utilizing supply voltages identical to those of a standard tube-type klystron.

Abstract: A microwave oscillator arrangement comprising a microstrip resonator, a Gunn oscillator mounted outside the substrate of the resonator, a varactor diode connected in series with the Gunn oscillator and the resonator, and means for applying adjustable bias to the varactor diode.

Abstract: Disclosed is an active radial-to-coaxial transmission line wherein an annular configured semiconductor device, such as an IMPATT diode, is embedded in a chosen dielectric material which is in turn positioned between two conductive members forming a radial transmission line. Advantageously, the lower conductive member of the transmission line also serves as a heat sink for the diode, and the upper conductive member of the radial transmission line may be formed as a highly conductive coating which makes good ohmic contact to the diode, thereby minimizing power losses at this contact. The radial transmission line transforms the relatively low impedance of the diode to a substantially higher value at the outer periphery thereof where contact to a coaxial transmission line may be achieved with good impedance matching, thereby maximizing power transfer between the radial and coaxial transmission lines.

Abstract: The dual cavity oscillator includes a pair of electromagnetically coupled resonators and a limited space charge accumulation (LSA) device disposed in one of the resonators. The resonators form a parallel resonance circuit at a first frequency and the LSA device and the pair of resonators form a series resonance circuit when the oscillator is operated at a second frequency which is generally within a few percent below the first frequency.

Abstract: A dielectric waveguide oscillator includes a microwave producing diode, a strip resonator, and a dielectric waveguide butted against one end of the strip resonator.

Abstract: A Transverse Electromagnetic Field (TEM) transmission line or lines with a negative impedance semiconductor device at one end and a lossy radio frequency (RF) load impedance at the other end, a TEM resonant transmission line with output power coupled therefrom, and an opening for coupling energy from the TEM transmission line or lines to the TEM resonant transmission line at the desired frequency with the Q of the oscillator being determined by the amount of coupling provided.

Abstract: A microwave oscillation device of the invention comprises a cut-off waveguide having a cut-off characteristic with respect to a frequency used. At one end of this cut-off waveguide is provided a coaxial line member, at one end of which is provided a microwave absorber and at the other end of which is disposed an oscillation element. Within said cut-off waveguide is disposed a dielectric resonator so as to be electromagnetically coupled to the oscillation element of the coaxial line member in terms of lumped constant and to an output waveguide provided at the other end of the cut-off waveguide in terms of distributed constant.

Abstract: A controlled interval pulse train generator comprising a plurality of three terminal transferred electron logic devices, and a delay line. The generator produces a train of small pulse-width voltage pulses at intervals determined by the delay line. The pulse train is started in response to an initial pulse and is terminated in response to a voltage step.

Abstract: A varactor tuning apparatus for tuning a strip transmission line radio frequency device, wherein the device having predetermined operating characteristics includes an active element such as an avalanche diode and a resonant conductive strip section. The tuning apparatus comprises a separate varactor circuit having a varactor mounted on a dielectric substrate including a resonant conductive strip. The varactor circuit is RF coupled to the strip transmission line of the device to provide for tuning the device by varying the reactance of the strip transmission line by electrically changing the capacitance of the varactor.

Abstract: A planar transferred electron device is biased such that the voltage across the anode and cathode electrodes is above that of a threshold voltage in the presence of which the device is characterized by a transfer of electrons from a high to a low mobility sub-band and the formation of domains. A reverse biasing potential is applied between the gate and cathode electrodes which is of sufficient magnitude to cause in the quiescent state the suppression of the formation of these domains. When signals above a given level are provided between the gate and cathode electrodes, the device operates according to a transferred electron effect including the formation of the domains.

Abstract: The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.

Abstract: An active millimeter wave integrated circuit including a thin non-metallic waveguiding layer mounted on an image plane and having an opening therein which exposes a given area of the image plane. An active solid state device, such as a millimeter wave diode, is mounted on the exposed area of the image plane, and millimeter wave energy is coupled to and from the device into the waveguiding layer by way of both a metallic ribbon (or wire) bonded to the active device and a connecting metallization pattern atop the waveguiding layer. This metallization pattern may assume various geometries corresponding to functional components such as low-pass filters, resonators, stepped or tapered metallized transitions, and the like, and also provides the desired impedance matching and efficient energy coupling between the active device and the waveguiding layer.

Abstract: The present invention relates to a frequency modulated oscillator, preferably operating within the microwave range, comprising a resonator having a reversed biased semi-conductor element, for example, a Gunn diode and voltage dependent capacitor, for example a varactor diode acting as a frequency modulator and being connected to a modulating signal source. In order to linearize the modulation characteristic, there is a resonant circuit in the resonator which circuit is tuned to the first harmonic 2fo of the unmodulated fundamental frequency fo of the oscillator. When modulating the varactor diode the resonant circuit becomes detuned and the voltage across the Gunn diode is changed so that its capacitance is also changed to change the fundamental frequency fo which compensates the non-linear change in the modulation characteristic of the varactor diode.

Abstract: A microwave transmitting and receiving apparatus comprises a Gunn diode as an oscillating element and a mixer diode as a receiving element disposed within a rectangular waveguide closed at one end by its short-circuiting plate. The oscillating and receiving elements are juxtaposed with each other at a position spaced by 1/2 .lambda.g (.lambda.g: wavelength in the waveguide) from the short-circuiting plate toward an opening of the waveguide. An adjusting screw for permitting a match of the receiving element impedance with the input signal impedance and for adjusting the output power is fitted by screw engagement to the waveguide at a position spaced by 1/4 .lambda.g from a straight line connecting the both elements toward the waveguide opening, and another adjusting screw for oscillating frequency-adjustment is fitted by screw engagement to the waveguide at a position between said straight line and the short-circuiting plate.

Abstract: A large voltage swing across a typical planar transferred electron logic device is achieved by a nonlinear load resistor in series with the transferred electron device. The nonlinear load resistor includes a body of transferred electron effect material with an adjacent layer of high dielectric material. The layer is of sufficiently high dielectric material so that the load resistor so formed saturates at a current standoff point provided by the bias source of the logic device.

Abstract: A modulator for monochromatic beam of radiation, such as a laser beam, consists of a semiconductor crystal body. A sufficient potential is applied to the body to produce a moving zone of resistivity and potential gradient varying from the remainder of the body. The zone may result, for example, from the Gunn effect or the piezoelectric effect. The zone also has optical properties differing from the remainder of the body, so that a beam directed at the crystal can be modulated by the moving zone.

Abstract: This microwave circuit incorporates a transistor structure that provides either a two port amplifier or an injection frequency locked oscillator. This circuit eliminates circulators employed with Gunn and Impatt diode amplifiers and injection frequency locked oscillators. The collector-base junction is reverse biased so that the collector region functions either in the Impatt mode or in the transferred electron mode. An RF input signal is applied across the forward biased emitter-base junction. With a load across the collector-base junction having a conductance equal to the absolute value of the negative conductance generated by the collector region, the circuit functions as an oscillator at a frequency which is injection locked to the frequency of the input signal. With a load of increased conductance to suppress oscillations, i.e. overload the collector region, the circuit functions as an amplifier.

Abstract: A variable frequency voltage controlled oscillator is tuned to a selected frequency by applying a varying voltage to the control port of the oscillator to sweep the oscillator signal through a frequency range which includes the frequency of a reference frequency source. The value of the varying voltage is stored at the instant the oscillator frequency coincides with the frequency of the reference source. A dc offset voltage is then added to the stored voltage to produce a sum voltage which is substituted for the varying voltage at the control port of the oscillator to tune the oscillator to the selected frequency. The offset voltage is equal to the difference in the control voltages at the selected and reference frequencies and may be determined from the oscillator control voltage characteristic.