Abstract: In an RF balanced matching device, a first capacity pattern of a first area is formed on a first ceramic sheet. A second capacity pattern of a second area is formed on the first ceramic sheet, spaced apart from the first capacity pattern at a predetermined distance. A third capacity pattern of a third area is formed on a second ceramic sheet stacked on the first ceramic sheet, overlapping perpendicular to the first capacity pattern. The third capacity pattern cooperates with the first capacity pattern to form a first capacitance. Also, a fourth capacity pattern of a fourth area is formed on the second ceramic sheet, overlapping perpendicular to the second capacity pattern. The fourth capacity pattern cooperates with the second capacity pattern to form a second capacitance. An inductance pattern has a predetermined electrical length and connects the third capacity pattern with the fourth capacity pattern.

Abstract: A non-inverting-side first switch is formed in a first area on one of sides of a differential amplifier, meanwhile a non-inverting-side second switch is formed in a second area on the other of sides of the differential amplifier, the non-inverting switches being for resetting a non-inverting input terminal of the differential amplifier. Similarly, An inverting-side first switch is formed in the first area, meanwhile an inverting-side second switch is formed in the second area, the inverting switches being for resetting a non-inverting input terminal of the differential amplifier. Further, a non-inverting-side line connecting the non-inverting-side first switch and the non-inverting input terminal, and an inverting-side line connecting the inverting-side first switch and the inverting-side second switch are provided next to each other. A signal line crossing one of the lines is provided so as to cross the other of the lines.