Abstract: A resonant microwave isolator is described in which a diagonal slot is fod in the top conductor of a microstrip, a strip of ferromagnetic material is mounted over at least a portion of the slot and magnetic flux is established in the ferromagnetic material in a direction intersecting the slot.

Abstract: A pulse repetition frequency (PRF) pushing compensation circuit to negate PRF-induced frequency shifts and ambient temperature change-induced frequency shifts in pulsed RF sources. The PRF pushing compensation circuit samples PRF voltage and feeds it into a resistor-capacitor (RC) network so that the DC voltage component across the capacitor is directly proportional to the PRF. The DC voltage is then amplified, via a transistor, and fed to a varactor diode circuit coupled to the source's frequency determining element (e.g., dielectric resonator, microwave cavity, or other element). With a varactor diode tuning the source, the capacitor voltage derived from the PRF voltage is applied to the varactor diode to effect a frequency shift in the pulsed RF source which is equal and off-setting to the PRF-induced frequency shift. Temperature sensitive resistors can be used in the DC offset voltage of the varactor diode circuit to compensate for frequency changes due to ambient temperature variances.

Abstract: A microwave oscillator/power combiner incorporates two microstrip transmission lines, each coupled electromagnetically to an output transmission line. Each of the microstrip transmission lines incorporate active diodes such as IMPATT or GUNN diodes which generate RF energy when acted upon by a DC voltage. The output transmission line is coupled to ground to allow the output end of the transmission line to be adjacent to the active diodes. The two microstrip transmission lines are coupled to a high Q tank circuit through a Wilkinson power divider. The high Q tank circuit is preferably a dielectric resonator. The oscillator may be cascaded to increase power output.

Abstract: A variable characteristic impedance microstrip resonator for use in a tunable oscillator circuit, the resonator having relatively high characteristic impedance near its driven end to maximize tuning range and relatively low characteristic impedance near its opposite end to minimize losses and thus optimize sideband noise performance.

Abstract: A tuning circuit (4) for a VCO includes a coarse tuning section (6) and a fine tuning section (7). The coarse tuning section includes three varactors (13, 14, 15) connected in series. These varactors together with their housings are designed to operate at considerably lower frequencies than the VCO, so that they behave as inductances at the VCO frequency. A capacitance (16) connected in parallel with the varactor inductances forms a resonant circuit therewith and serves to widen the tuning band of the VCO in adjustable manner. A capacitance (17) connected between the coarse and fine tuning sections adjusts the central oscillation frequency. An adjustable transmission line (12) in the fine tuning section adjusts fine tuning sensitivity.

Abstract: A microwave oscillator having at least one transistor (1), which may be bipolar or otherwise. A tunable reactive circuit (13, 15, 16) suitable for adjusting the transistor's zone of potential instability is inserted in the emitter circuit of the transistor (1) (or in the source circuit of an FET). The reactive circuit comprises a series length of transmission line (13) and a parallel capacitance (15, 16) constituted, at least in part, by a conducting slab (15) of adjustable size.

Abstract: An electronically controlled oscillator capable of operating in the rf/microwave frequency range, and using a stacked crystal filter as the frequency determining element in the oscillator. A non-linear element including an appropriately biased high frequency amplifier has the stacked crystal filter connected in its feedback path and provides a loop gain of greater than 1 to meet one aspect of the Barkhausen criteria. An electronically variable impedance, such as a hyperabrupt junction varactor, is connected in the feedback loop along with the stacked crystal filter to controllably insert a phase adjustment into the feedback path, to be compensated by a phase adjustment by the stacked crystal filter, thereby to controllably maintain a loop phase shift which is an integral number of 2.pi. radians at the oscillator frequency, and to vary the oscillator output frequency about the frequency of the stacked crystal filter in a controllable fashion.

Abstract: Oscillator which maintains a high Q constant frequency over changes in temperature utilizes two parallel transmission lines having an active element embedded within one of the lines. A dielectric resonator oriented one-half wave length from the embedded transmission line generates a high impedance near the embedded transmission line at resonant frequency. The resonating energy is transferred to the second parallel transmission having a low impedance. An impedance inverter matches the low impedance to the output bias and transfers the high peak powers from the low impedance in the second transmission line. The active element is bias controlled.

Abstract: An oscillator having a dielectric resonator and being electronically tuned in frequency by a varactor, in particular in the 22 GHz range, the oscillator comprising an active electronic component having negative resistance (17), at least two dielectric resonators (40, 41), and a substrate (13) on the surface of which there are three striplines (10, 11, 12), with the first and second striplines (10 and 11) being in line and having their adjacent ends connected to two respective electrodes of the active component (17). The third stripline (12) which runs parallel to the first two striplines (10, 11) is connected to the varactor (26), with all of the dielectric resonators (40, 41) being coupled to the first stripline (10).

Abstract: A feedback type microwave oscillator using a three-terminal active element employs both series feedback and parallel feedback and capacitance in its output circuit, thereby increasing the small signal negative resistance, and the output power and its resistance to impedance fluctuations of a load attached thereto.

Abstract: An electronically tuned dielectric resonator stabilized oscillator has a dielectric resonator that is fine tuned by an electronic method of tuning which includes a varactor coupled to a microstrip. This varactor microstrip transmission line is positioned below the dielectric resonator but above the plane in which a transmission line for the carrier frequency resides. By not placing the fine tuning microstrip line on the same plane as the main oscillator line, spurious oscillation between the fine tuning transmission line and the primary carrier wave resonator frequency line are minimized. Additionally, the fine tuning microstrip line is positioned orthogonal to the pathways along which the main signal transmission lines are coupled.

Abstract: A microwave oscillator having a dielectric resonator, in particular for use in the 22 GHz range, the oscillator comprising a negative resistance component (18) and a dielectric resonator (19) disposed on the surface of a substrate (13, 14) situated inside a housing (10), and the housing (10) being provided with a clearance situated over the dielectric resonator (19).

Abstract: A microstrip oscillator utilizing a Gunn diode as its active element for operation in the W-Band. A microstrip shunt resonator is dimensioned to resonate the Gunn diode at either its fundamental frequency or second harmonic frequency while a matching circuit, including a quarter wavelength transformer and a coupled microstrip transformer is employed to match the complex impedance of the Gunn diode device to the load. A radial hat on the Gunn diode effectively prevents radiation of electromagnetic energy from the system to thereby maximize the energy delivered to the load while, at the same time, functioning as a transformer element.

Abstract: The invention pertains to a doubling oscillator with low noise in the vicinity of the carrier frequency. The doubling oscillator of the invention is of the "push-push" type comprising two parallel-mounted transistors. The gates of these two transistors have a common oscillating circuit comprising two microstrip lines, two resistors and a common dielectric resonator positioned between the two microstrip lines. To reduce the low-frequency noise in the vicinity of the carrier near the load, the non-correlated low frequency noise sources of the transistors are either placed in series by means of a choke and two capacitances mounted at the ends of the microstrips or loaded at an infinite impedance through two capacitances mounted at the ends of the microstrips. This oscillator has applications in ultra-high frequency systems, radars and telecommunications.

Abstract: Disclosed is a circuit for power combining electromagnetic energy in the millimicrowave frequency band where the electromagnetic energy is produced by two substantially identical varactor tuned microstrip oscillators where the power combining circuit has less than perfect isolation properties allowing a fraction of the output of one to be fed back to the other so that the two become locked in frequency.

Abstract: A high-frequency oscillator having a high-frequency oscillation circuit formed through use of a microstripline. The high-frequency oscillation circuit has a resonator and a transistor connected to a reference potential and coupled with the resonator through a first capacitor. A first electrode of the transistor is connected with the resonator through the first capacitor. A second electrode of the transistor is connected to the reference potential and a third electrode thereof is adapted to derive an output. A substrate is provided with a land portion to be connected with the first electrode of the transistor, and a capacitor electrode is formed on the opposite surface of the substrate to be opposite to the first electrode connection land portion through the substrate. The capacitor electrode, the first electrode connection land portion and the substrate form a second capacitor, which is connected to the reference potential between the first capacitor and the first electrode of the transistor.

Abstract: A high frequency oscillator comprising a ring type inductive resonator of a microstrip line constituted in a rectangular or annular loop. Capacitors are serially connected to both ends of the line, thereby improving the low-noise, separation and stability characteristics by use of the steep-phase characteristic of the ring-shaped resonator.

Abstract: A switchable, parallel-feedback, multi-frequency dielectric resonator oscillator that generates microwave energy at any of several available frequencies is disclosed. The oscillator includes an amplifier that is operable for oscillation at a frequency determined by a parallel feedback dielectric resonator connected between its output and input terminals, and a switching circuit for selectively connecting any one of a plurality of dielectric resonators to the input terminal of the amplifier. The oscillation frequency of the oscillator is determined by a resonant frequency of whichever of the dielectric resonators is connected to the input terminal of the amplifier through the switching circuit.

Abstract: A digital compensation circuit for improving the temperature stability of dielectric resonator oscillators is disclosed. A temperature sensor indicates a measure of ambient temperature which is correlated with an amount of phase shift necessary to compensate for frequency drift in a dielectric resonator oscillator. The correlation is made using a correction table or correction function which is determined empirically in a calibration process. The necessary phase shift is then supplied via a voltage controlled phase shifter. This phase shifter is part of the RF oscillation loop which also includes an amplifier, directional coupler and dielectric resonator filter (including microstrip).

Abstract: A dielectric resonator microwave oscillator in which the gate of a FET is connected to a resonance circuit. An inductor is connected to the drain of the FET, and the output is taken from the source of the FET. This dielectric resonator microwave oscillator has enhanced negative resistance and positively starts the oscillation even when there is a low reflection coefficient of the resonance circuit. Using a circuit which consists of a capacitor and inductor between the source and the output terminal, a further increasing of negative resistance at the gate of the FET is obtained.

Abstract: Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the periodic diode structures as the gain element of microwave amplifiers and oscillators. Preferred embodiments also place capacitors between the diodes to fix nodes in the electric field and increase the effective structure size.

Abstract: An oscillator with a dielectric resonator capable of providing a designated output and being suited for mass production comprising an insulating substrate, a strip structure, a dielectric resonator located adjacent to the strip structure, the last two being mounted on the substrate, and an oscillatory transistor connected to one end of the strip structure. The strip structure consists of two spaced strip sections interconnected by an electrically-conductive bridge-shaped connector section having a conductor part, which is located further away from the insulating substrate and closer to the dielectric resonator than the two strip sections.

Abstract: A microwave resonance circuit device including plural microstrip lines provided on one side of a dielectric substrate. A dielectric resonator is mounted on the reverse side of the substrate from the microstrip lines and is disposed so as to have a coupling relation with a first one of the microstrip lines. A ground conductor is arranged on the reverse side of the substrate so as to overlap substantially one-half of the width of the first microstrip line extending in a direction away from the dielectric resonator, and to overlap entirely the other microstrip lines. A transistor is mounted on the same side of the substrate as the microstrip lines and connected therewith to form an oscillator circuit.

Abstract: A switchable multi-frequency dielectric resonator oscillator that generates microwave energy at any of several available frequencies is disclosed. The oscillator includes a transistor that is operable for oscillation at a frequency determined by a feedback resonator connected to its control terminal, and switching means for selectively connecting any one of a plurality of feedback resonators to the control terminal of the transistor. The oscillation frequency of the oscillator is determined by the resonant frequency of whichever of the feedback resonators is connected to the control terminal of the transistor through the switching means. It is preferred to utilize dielectric resonators as the feedback resonators, a field effect transistor as the transistor, and PIN diodes as the switching means.

Abstract: Herein disclosed is an oscillator having a micro-strip line for acting as a resonance line. A frequency controlling variable capacitor is connected with one terminal of the micro-strip line and arranged such that it can be controlled by a voltage applied. An auxiliary micro-strip line has its one terminal connected at least in a high-frequency manner with the one terminal of the micro-strip line and its other terminal made connectable with the micro-strip line. A switch is provided for connecting the other terminal of said auxiliary strip line with said micro-strip line so that it may be turned on or off to switch the oscillation frequency in dependence upon whether or not the auxiliary resonance line is connected in parallel with the micro-strip line.

Abstract: An FET oscillator wherein a bias circuit is connected to a drain of a field-effect transistor and a source circuit including a transmission line and a self-bias circuit is connected to a source of the transistor, so that the source is substantially open-circuited at an oscillation frequency and the field-effect transistor operates as a two-terminal (the gate and drain) element exhibiting a negative resistance, and wherein a resonant circuit is connected to the gate of the transistor. With the source circuit connected to the transistor source, the oscillator can have a high unloaded Q-value of Qo and a high externally-loaded Q-value of Q.sub.ext, whereby the oscillation frequency is stable. According to this oscillator, only a single bias circuit for the drain is required without the need of a bias circuit for the gate.

Abstract: The disclosure relates to a gallium arsenide travelling-wave transistor oscillator which extends the oscillation frequency of the individual FETs by connecting them in parallel across a pair of inductive arrangements, either in common-gate or common-source configurations.

Abstract: A tuning system employs a specific resonant circuit which includes two electrodes confronting each other through a dielectric interposed therebetween. Each of the two electrodes has at least one bent portion to present a lumped-constant inductance and has a desired equivalent electrical length. The two electrodes respectively have common terminals located out of mutually confronting positions so that voltage signals induced by mutual inductance between the electrodes will be opposite in phase so as to thereby produce a parasitic distributed-constant capacitance. The two electrodes form a two-terminal circuit network having a first terminal disposed at a desired position on one of the two electrodes and the common terminals as a second terminal. The first terminal of the resonant circuit is connected to a feedback amplifier, an amplifier, or a mixer so as to form a tuning oscillator, a tuning amplifier or a mixer.

Abstract: An oscillator includes two transistors or like devices having their emitters connected to a common of a power source. The two transistors or like devices are interconnected with the base of the first connected to the collector of the second and the base of the second connected to the collector of the first. An inductance is placed across the base-collector connectors and a circuit through the oscillator is completed via a lead to one of the base-collector connectors.

Abstract: An FET oscillator wherein a bias circuit is connected to a drain of a field-effect transistor and a source circuit including a transmission line and a self-bias circuit is connected to a source of the transistor, so that the source is substantially open-circuited at an oscillation frequency and the field-effect transistor operates as a two-terminal (the gate and drain) element exhibiting a negative resistance, and wherein a resonant circuit is connected to the gate of the transistor. With the source circuit connected to the transistor source, the oscillator can have a high unloaded Q-value of Qo and a high externally-loaded Q-value of Q.sub.ext, whereby the oscillation frequency is stable. According to this oscillator, only a single bias circuit for the drain is required without the need of a bias circuit for the gate.

Abstract: A microwave oscillator and a combination microwave oscillator/single balanced mixer for a satellite television receiver includes a cylindrical dielectric resonator located on one side of a ground plane formed by a conductive foil on a substrate with microstrip transmission lines formed by foil patterns on the opposite side of said substrate. A gallium arsenide FET is disposed in a hole through said substrate with its source electrode connected to the ground plane and its drain and gate electrodes coupled to first and second transmission line strips, portions of which are following the contours of said dielectric resonator. Two sets of coupling slots are formed in the ground plane for permitting magnetic coupling between the dielectric resonator and the opposite transmission line strips. In one embodiment an additional coupling slot in the ground plane couples the dielectric resonator to an output transmission line strip.

Abstract: A microwave transistor oscillator/doubler comprising a Field-Effect Transistor with Terminals G, D and S in combination with a coupling network connected to the terminals G, D and S and composed of microstrip lines with lengths equal to a quarter wavelength at the second harmonic of a fundamental frequency. The doubler further comprises a bias circuit for supplying appropriate voltages to the FET terminals, and an impedance coupler for coupling from the FET D-S terminals to a waveguide load. The coupling network optimizes feedback at the second harmonic between the D-S and G-S ports of the FET to prevent destructive harmonic feedback interaction with the desired signal while providing optimum conditions for feedback at the fundamental frequency. The bias circuit is connected to the coupling network and includes a second network of transmission line elements of lengths equal to a quarter wavelength at the fundamental in order to prevent dissipation of the fundamental frequency therein.

Abstract: A planar oscillator (9, 109) having a dielectric cavity (25, 125) and which is operative at microwave frequencies, said oscillator consisting of a dielectric material base (10, 110) one surface of which has, superposed thereto, a continuous layer (11,111) of a conductive material which coats portions of said face; the remaining portions (10A, 10B, 110A', 110A", 110B) of the surface have, superposed thereto, strips of a conductive material (12,13,14,112,113,114) which are separate from each other and are electrically connected to an active element (19, 119), a dielectric cavity (25,125) adhering to the opposite surface of the dielectric material base (10,110), the layer of conductive material (11,111) providing a grounding plane and the strips of conductive material (12,13,14,112,113,114) providing transmission and output lines for the oscillator.

Abstract: A small size and light weight microwave power generating apparatus in which a power MOS FET which can withstand a high voltage and large current is combined with a microwave transmission circuit having a drain side coaxial resonating system having an internal conductor connected to the drain of the MOS FET to be tuned under a cavity parallel resonating condition to an oscillating frequency and a gate side coaxial resonating system having an internal conductor connected to the gate electrode of the MOS FET and an external conductor connected to the internal conductor of the gate side coaxial resonating system via a variable capacitor. A high frequency oscillation (100-1000 MHz) is realized without the use of a magnetron by the internal capacitances C.sub.GS and C.sub.DS of the MOS FET.

Abstract: An ultra-high frequency oscillator having a very high thermal stability using a transistor coupled by a microstrip-type transmission line to a dielectric resonator with a very low temperature coefficient. It incorporates a field effect or bipolar transistor and an insulating substrate metallized or formed of metal on one face forming the ground plane. The latter projects over the substrate at a point close to two microstrip lines deposited on the face of the substrate opposite to the ground plane, the transistor being welded to said projecting point of the ground plane and to the microstrip lines. The assembly forms a compact hybrid circuit.

Abstract: A microwave oscillator circuit with an FET, a dielectric resonator and a micro-strip line has a capacitive reactance element connected between the source terminal of the FET and ground or between the source and drain terminals of the FET, so that the oscillation frequency fluctuations due to the power supply voltage fluctuations or the ambient temperature variations can be suppressed.

Abstract: A temperature-stabilized MIC solid state oscillator in the form of a planar transmission circuit has two strip line resonators respectively having chip capacitors inserted serially in the middle of the strip lines. Both of the chip capacitors have linear capacitance temperature characteristics. One strip line resonator operates as a band rejection filter and as a load circuit of an oscillating device. The other strip line resonator operates as a serial resonator to ground a port of the oscillating device that should be grounded. The oscillating frequency characteristics versus temperature are compensated in an excellent manner due to the provision of the two strip line resonators.

Abstract: A solid-state MIC oscillator in the form of a planar transmission circuit has a band rejection filter as a load circuit of an oscillation device. The band rejection filter is a resonator coupled to a transmission line which connects the oscillation device with an oscillator load. The load impedance of the oscillation device is adjusted to the oscillating condition by the position of the resonator. A simple capacitive susceptance stub is connected to the transmission line near the coupling point of the resonator. Variation of the oscillator frequency characteristics versus temperature caused by variation of the oscillator load is improved in an excellent manner due to the provision of the simple capacitive susceptance stub.

Abstract: In a microstrip circuit having dual diode driven, independently oscillati half-wave open ring resonating sections, partially coupled quarter-wave ring sections are provided to permit matching and tuning of diodes having dissimilar negative impedances. The quarter wave ring sections are combined with appropriate line sections to accommodate the negative impedance devices. The diode circuits are connected to the low impedance points of the oscillating ring sections by the quarter-wave ring sections. Appropriate terminations to ground are provided to suppress possible oscillations in a bias circuit. Second and third harmonic traps are provided for use with TRAPATT diodes. Ground lines are provided to reduce circuit unbalance in the event of drastic power changes occuring on either side of the circuit which may other wise result in odd mode operation. Slots are provided to suppress an undesired transverse resonance mode in the line sections accommodating the negative impedance devices.

Abstract: An oscillator comprises two leakage lines extending in parallel with a dielectric resonator positioned therebetween, within a housing made of metal. The dielectric resonator is electromagnetically coupled to the respective leakage lines with a predetermined coupling degree through coupling gaps formed between the dielectric resonator and the respective leakage lines. The dielectric resonator is disposed at an optimum position for establishing an oscillating condition of the oscillator. Preferably, the dielectric resonator is movable in the length direction of the leakage lines.

Abstract: A microwave oscillator circuit comprises a micro-strip line having a substrate of a dielectric material, a semiconductor such as a Gunn diode or an FET, and a dielectric resonator connected to the micro-strip line as a resonator circuit. A hole is formed in the substrate beside the micro-strip line, or the substrate is cut off to provide a recess. Through this hole or recess, as the case may be, the dielectric resonator is directly secured to the metal casing supporting the micro-strip line on the opposite side thereof or to the grounding conductor of the micro-strip line.

Abstract: First and second field effect transistors (FETs) each have a gallium arsenide substrate with an N-type active region that carries first and second electrodes in ohmic contact therewith and a gate electrode. The FETs are mounted in a flip-chip carrier that connects the first electrodes to ground. The FETs are biased to cause a current to flow from the first to second electrodes, whereby the first and second electrodes serve as drains and sources, respectively, of the FETs. The gate of the first FET is connected to a resonator. Additionally, a matching network connects the source of the first FET to the gate of the second FET. The matching network and the biasing of the first FET cause the gate input impedance thereof to be of a negative value that compensates for losses in the resonator. A load connected to the source of the second FET and the bias voltage cause the second FET to have a gate input impedance of a negative value that causes oscillation.

Abstract: An SHF band oscillation circuit using a field effect transistor (FET) having a feedback path between gate and drain or source and a resonator connected to the gate. Impedances connected to the respective terminals of the FET comprise microstrip lines. A gate bias circuit includes a temperature-sensitive semiconductor device so that a gate bias is changed with the change in ambient temperature. In this manner, the change of oscillation frequency which would otherwise occur by the change of the ambient temperature is compensated. The resonator connected to the gate comprises a dielectric resonator to further stabilize the oscillation frequency.

Abstract: A microstrip circuit which features a pair of open ring resonators sections adapted to oscillate independently in their even mode. In a preferred form, the ring resonator sections are each driven by a TRAPATT diode, and include a load circuit which combines the individual power outputs to a common load. Tuning stubs and the like may be provided to reactively trap harmonics in order to initiate the desired TRAPATT mode, and additional ring resonators may be interposed between the driving circuit and the load to filter the fundamental frequency, if desired. Other configurations permit power to be combined from two or more sets of dual ring resonators.

Abstract: Dielectric resonator stabilized micro-strip oscillators in which micro-strip lines are provided to the first, second and third terminals of the active element for oscillation and in which a dielectric resonator coupled at a predetermined position to one of the micro-strip lines which is not used as an output terminal is disclosed. In the integrated microwave oscillator, there is an active element for oscillation such, for example, as GaAs-FET having first, second and third terminals. Micro-strip lines connect to the first and third terminals, and a micro-strip line connected between the first and third terminals form a feedback circuit, together with the first mentioned micro-strip lines. A dielectric resonator is coupled to one of these micro-strip lines which is not used as an output terminal at a predetermined location.

Abstract: A microwave oscillator in which the power supplied by 2N microwave diodes such as avalanche or Gunn effect diodes is added. The diodes are connected together in two by sections of strip lines which enables magnetic coupling between these diodes and a dielectric resonator, with the diodes in each couple operating in phase opposition.

Abstract: An RF oscillator and modulator especially useful for UHF applications. The oscillator may comprise a series-tuned Colpitts circuit with the tuned circuit including microstrip transmission lines as impedance elements. The modulator includes a pair of serially connected diodes with the common terminal of the diodes receiving a modulation signal which varies the total current through the diodes. The diodes function as current-variable resistances to attenuate the carrier frequency signal in response to the modulation signal.

Abstract: A semiconductor oscillator circuit for very short waves, particularly for UHF, employing the stripline technique and utilizing capacitive voltage division in order to provide feedback. The stripline technique is employed at least, for all the discrete frequency determining (capacitive and inductive) components of the circuit and for the feedback path of the circuit. The series connection of the two capacitors forming the capacitive voltage divider is connected in parallel with a further capacitor, formed in stripline technique, whose capacitance lies in the same order of magnitude as that of one of the capacitors of the capacitive voltage divider and the two capacitors which have the same order of magnitude in capacitance are formed by two conductor electrodes which are parallel to each other at a very small mutual distance with respect to their geometric dimensions, which have a length and width corresponding to their capacitance, and which have a common return electrode.

Abstract: The embedding network of a microwave oscillator comprises three lengths of parallel conductors supported above a ground plane and having odd and even mode short circuits thereon. Two of the conductors are connected to different ones of the electrodes of a bipolar microwave transistor which has a third electrode connected to ground. A load is connected between the third conductor and ground. Physical and electrical characteristics of the network are varied to cause parameters thereof to be desired values which yield maximum output power and oscillation at desired frequencies.

Abstract: A microwave oscillator circuit with an FET, a dielectric resonator and a micro-strip line has a capacitive reactance element connected between the source terminal of the FET and ground or between the source and drain terminals of the FET, so that the oscillation frequency fluctuations due to the power supply voltage fluctuations or the ambient temperature variations can be suppressed.