Abstract: A filter (10) has a first passband and a second passband on a higher frequency side than the first passband and includes a series arm circuit (11) and a parallel arm circuit (12), wherein the parallel arm circuit (12) includes a parallel arm resonator (p1) connected between a node (x1) and ground and having a resonant frequency frp located between a first passband and a second passband, an inductor (L1) connected between the node (x1) and the ground, and an inductor (L2) connected between the node (x1) and the ground and connected in series to the parallel arm resonator (p1), and a circuit in which the parallel arm resonator (p1) and the inductor (L2) are connected in series is connected in parallel to the inductor (L1).

Abstract: An acoustic wave device includes a support substrate, an acoustic reflection film on the support substrate, a piezoelectric layer on the acoustic reflection film, the piezoelectric layer including first and second primary surfaces, and first and second flat-plate electrodes on the first and second primary surfaces of the piezoelectric layer. The acoustic reflection film includes high acoustic impedance layers and low acoustic impedance layers alternately stacked together. At least one layer of the high acoustic impedance and low acoustic impedance layers is a stack of layers of first and second materials having equal or substantially equal acoustic impedances for at least one of longitudinal acoustic impedance and transversal acoustic impedance. The interface between the layers of first and second materials has irregularities.

Abstract: A filter includes: series resonators disposed between an input terminal and an output terminal; and shunt resonators disposed at different nodes between the input terminal and the output terminal, wherein a resonance frequency and an antiresonance frequency of at least one series resonator among the series resonators are respectively located within a reference frequency range of a resonance frequency and an antiresonance frequency of the shunt resonators.

Abstract: A multiplexer includes first and second filters connected to a common terminal. The second filter has a pass band on a higher frequency side with respect to a pass band of the first filter. The first filter includes a series arm circuit, and a parallel arm circuit having a resonant frequency on a lower frequency side with respect to a frequency at a low frequency end of a pass band of the first filter, and the series arm circuit includes a series arm resonator having a resonant frequency in the pass band of the first filter and a series arm resonator that is electrically connected in parallel to the series arm resonator and that has a resonant frequency on a higher frequency side with respect to a frequency at a high frequency end of the pass band of the first filter.

Abstract: A vertically integrated circuit assembly may include a substrate including a plurality of electrical traces, and a first circuit assembly layer disposed on the substrate. In embodiments, the first circuit assembly layer includes a first set of integrated circuit components, and a plurality of electrical interconnects configured to route signals through the first circuit assembly layer. In embodiments, the vertically integrated circuit assembly further includes a second circuit assembly layer coupled to the top surface of the first circuit assembly layer. The second circuit assembly layer may include a second set of integrated circuit components, and a plurality of electrical interconnects configured to route signals through the second circuit assembly layer. In embodiments, an electrical interconnect arrangement on a top surface of the first circuit assembly layer is configured to interface with an electrical interconnect arrangement on the bottom surface of the second circuit assembly layer.

Abstract: According to various aspects and embodiments, a method for forming a packaged electronic device is provided. In accordance with one embodiment, the method comprises depositing a layer of temporary adhesive material on at least a portion of a surface of a first substrate having a coefficient of thermal expansion, depositing a layer of dielectric material on at least a portion of the layer of temporary adhesive material, forming at least one seal ring on at least a portion of the layer of dielectric material, providing a second substrate having a coefficient of thermal expansion that is substantially the same as the coefficient of thermal expansion of the first substrate, the second substrate having at least one bonding structure attached to a surface of the second substrate, and aligning the at least one seal ring to the at least one bonding structure and bonding the first substrate to the second substrate.

Abstract: An electronic device comprises a first surface acoustic wave (SAW) resonator and a second SAW resonator, each including interleaved interdigital transducer (IDT) electrodes, the first and second SAW resonators being formed on a same piezoelectric substrate, the first SAW resonator having IDT electrodes with a different finger pitch than the IDT electrodes of the second SAW resonator; a dielectric material layer disposed on the IDT electrodes of the first and second SAW resonators; and a high velocity layer disposed within the dielectric material layer disposed on the IDT electrodes of the first SAW resonator, the second SAW resonator lacking a high velocity layer disposed within the dielectric material layer disposed on the IDT electrodes.

Abstract: An RF filter is disclosed. In an embodiment, the RF filter includes series-interconnected basic elements, each basic element having an electroacoustic resonator and impedance converters interconnected in series between the basic elements, wherein the impedance converters are impedance inverters and/or admittance inverters, and wherein the resonators of the basic elements are either only series resonators or only parallel resonators.

Abstract: A composite filter device includes an antenna common terminal, a first band pass filter having a first pass band, and a second band pass filter having a second pass band located at higher frequencies than the first pass band. The first band pass filter includes an elastic wave resonator. The elastic wave resonator includes a LiNbO3 substrate, an IDT electrode on the LiNbO3 substrate, and a dielectric film that covers the IDT electrode and includes a silicon oxide as a main component. When f1? is the frequency of a Sezawa wave of the first band pass filter and f2 is the center frequency of the second pass band, f1? is located at a different position from f2.

Abstract: A surface acoustic wave device includes a piezoelectric material layer, a pair of busbars, a plurality of electrode fingers, and reflectors. The piezoelectric material layer has a thickness that is in a range of 1 to 2.5 times of an acoustic wavelength. A main mode of an elastic wave excited on the piezoelectric material layer by the electrode fingers is a leaky surface acoustic wave. A design variable is set such that a minimum propagation loss frequency where a propagation loss becomes minimum and a frequency of a plate wave spurious formed due to a slow shear wave excited together with the leaky surface acoustic wave are matched. A propagation velocity of a slowest bulk wave of an elastic wave that propagates in a lower layer of the piezoelectric material layer is equal to or more than 1.05 times of a velocity of the leaky surface acoustic wave.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a transmit filter that includes bulk acoustic wave resonators and a series surface acoustic wave resonator that is coupled between the bulk acoustic wave resonators and a transmit output node. The acoustic wave device can also include a loop circuit that is coupled to the transmit filter. The loop circuit can generate an anti-phase signal to a target signal at a particular frequency.

Abstract: A high-frequency module (1) includes a substrate (10), a first electronic component (30) and a second electronic component (40) mounted on a main surface (10a) of the substrate (10). The substrate (10) has a protruding portion (20) projecting from the main surface (10a), the first electronic component (30) is mounted in a region of the main surface (10a) different from a region in which the protruding portion (20) is provided, and the second electronic component (40) is mounted on the protruding portion (20).

Abstract: Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.

Abstract: A notch filter includes a first inductor coupled between an input node and an output node, a dual-resonator structure coupled between the input node and the output node, and a second inductor coupled between the dual-resonator structure and ground, and a bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and functional elements on a first surface of the piezoelectric substrate. At least a portion of the functional elements includes an interdigital transducer (IDT) electrode, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode. A portion of a wiring pattern connecting a first functional element and a second functional element is on a second surface different from the first surface of the piezoelectric substrate.

Abstract: A bulk-acoustic wave resonator includes: a first substrate formed of a first material; an insulating layer or a piezoelectric layer disposed on a first side of the first substrate; and a second substrate formed of a second material and disposed on a second side of the first substrate, wherein the second material has thermal conductivity that is higher than a thermal conductivity of the first material.

Abstract: Examples provide a wideband filter structure and apparatus, a radio transceiver, a mobile terminal, and a method for filtering a radio signal. The wideband filter structure (10) for a radio signal comprises a combination of at least one acoustic resonator (12) and at least one analog resonator (14). The acoustic resonator (12) is coupled to the analog resonator (14). The wideband filter structure (10) comprises a further component (16), which is coupled to the combination of the acoustic resonator (12) and the analog resonator (14).

Abstract: A notch filter includes a substrate having piezoelectricity, the substrate including a high-acoustic-velocity member, a low-acoustic-velocity film provided on the high-acoustic-velocity member, and a piezoelectric thin film provided on the low-acoustic-velocity film; an interdigital transducer electrode provided on the piezoelectric thin film; and reflectors provided on both sides of the interdigital transducer electrode in an acoustic wave propagation direction. An IR gap is within one of two ranges: 0.1??GIR<0.5? or 0.5?<GIR?0.9?, where ? is a wavelength determined by an electrode finger pitch of the interdigital transducer electrode, and the IR gap is a distance between electrode finger centers of an electrode finger of the interdigital transducer electrode closest to the reflector out of the electrode fingers of the interdigital transducer electrode, and an electrode finger of the reflector closest to the interdigital transducer electrode, out of the electrode fingers of the reflector.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, functional elements on the piezoelectric substrate, a cover portion that opposes the piezoelectric substrate with a support layer interposed therebetween, and an input/output terminal on the cover portion. At least a portion of the functional elements includes an interdigital transducer electrode, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode. The functional elements include a filter that passes a signal in a predetermined frequency band, and a cancel circuit which is connected in parallel to the filter and attenuates a signal outside the predetermined frequency band in signals output from the output terminal. A portion of a wiring pattern connecting a first functional element and a second functional element included in the plurality of functional elements is provided on the cover portion.

Abstract: A multiplexer includes first and second nodes, an inductor, a first transmit/receive filter, and second and third transmit filters. The inductor is connected at one end to the first node and at the other end to the second node. The first transmit/receive filter is connected to the first node without the inductor interposed therebetween and uses the transmit and receive bands of band A as a pass band. The second transmit filter is connected to the second node and uses the transmit band of band B as a pass band. The third transmit filter is connected to the second node and uses the transmit band of band C as a pass band.

Abstract: A tunable filter using acoustic resonators is disclosed. A tunable filter includes a plurality of tunable resonator units (20). Each tunable resonator unit (20) has acoustic wave resonators (12). Each acoustic wave resonator is associated with a different tunable frequency. Each tunable resonator unit also has a first switch (22) configured to select one of the plurality of acoustic wave resonators of the tunable resonator unit at a time. The first switches of the plurality of tunable resonator units are coupled to cooperatively select one acoustic wave resonator in each one of the plurality of tunable resonator units, where a selected acoustic wave resonator in a tunable resonator unit of the plurality of tunable acoustic resonator units is associated with a same tunable frequency response as the other selected acoustic resonators of the others of the plurality of tunable acoustic resonator units. The selection results in an overall tunable frequency response.

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

Abstract: A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

Abstract: Aspects of this disclosure relate to a multiplexer, such as a duplexer, a quadplexer, a hexaplexer, or the like. The multiplexer includes acoustic wave filters coupled to a common node. A first acoustic wave filter of the acoustic wave filters includes acoustic wave resonators of a first type and a series acoustic wave resonator of a second type coupled between the acoustic wave resonators of the first type and the common node.

Abstract: A notch filter includes an inductor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

Abstract: The present invention discloses a type of ultra-wide band SAW filter which comprises a first SAW resonator group and a second SAW resonator group that are connected to form a ladder structure. Each SAW resonator in the said first SAW resonator group has the same film thickness; each SAW resonator in the said second SAW resonator group has the same film thickness; the film thickness of each SAW resonator in the said first SAW resonator group is the same as or different from the film thickness of each SAW resonator in the said second SAW resonator group. The SAW filter according to the present invention can realize the pass-band non-parasitic mode response and is a high-performance ultra-wide band filter with a bandwidth of 6-20% of the center frequency and an insertion loss of less than 2 dB, and the present invention features small size, low cost and a broad application prospect in the field of military and civilian communications equipment.

Abstract: Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. Zero or more dielectric layers are deposited over all of the IDTs and the diaphragms, wherein a total thickness of the zero or more dielectric layers is the same for all of the plurality of acoustic resonators.

Abstract: A duplexer includes first and second filter circuits and first and second wirings. The first filter circuit allows a signal of a first frequency band to pass therethrough between a first terminal and a common terminal and includes a first resonator which is connected at one end to a line disposed between the first terminal and the common terminal to branch off from the line. The second filter circuit allows a signal of a second frequency band, which is different from the first frequency band, to pass therethrough between a second terminal and the common terminal. The first wiring is connected at one end to the common terminal and is opened at the other end. The second wiring is connected at one end to the other end of the first resonator and is grounded at the other end. The first wiring is electromagnetically coupled with second wiring.

Abstract: An electronic filter includes a plurality of series arm acoustic wave resonators electrically connected in series between an input port and an output port, a plurality of parallel arm acoustic wave resonators electrically connected in parallel and electrically connected on first sides between respective ones of the plurality of series arm acoustic wave resonators and electrically connected on second sides to ground, and at least one additional acoustic wave resonator electrically connected in parallel to one of one of the plurality of series arm acoustic wave resonators or one of the plurality of parallel arm acoustic wave resonators and having a temperature coefficient of frequency (TCF) lower than a TCF of the acoustic wave resonator to which it is electrically connected in parallel.

Abstract: An acoustic wave filter includes series arm resonators, and a parallel arm resonator provided in a second path connecting a ground and a node connecting the series arm resonators. Each of the series arm resonators includes a piezoelectric body and an interdigital transducer electrode. One of the series arm resonators includes a second adjusting film that adjusts Ksaw. An anti-resonant frequency of the other one of the series arm resonators is higher than an anti-resonant frequency of the one of series arm resonators. An adjusting film that adjusts Ksaw is not provided in the other one of series arm resonators, or when a first adjusting film that adjusts Ksaw is provided in the other one of the series arm resonators, the first adjusting film is thinner than the second adjusting film.

Abstract: A composite multiplexer includes a first multiplexer, a second multiplexer, and a second LC circuit. The first multiplexer includes first band pass filter circuits and first LC circuits connected to end portions of the first band pass filter circuits that are opposite to a first terminal, respectively. The second multiplexer includes second band pass filter circuits. The second LC circuit is connected between the first terminal and the second multiplexer.

Abstract: A wideband piezoelectric filter with a ladder-type is provided, which is composed of a plurality of first resonators connected in series, a plurality of second resonators connected in parallel, an impedance matching device disposed near the input terminal or the output terminal of the filter, and at least one special parallel ground path led out from serial nodes. The special parallel ground path at least comprises one inductor having a larger inductance value, and a resonator having the same resonant frequency as a serial branch or a capacitor, wherein the larger inductor is connected to the resonator or capacitor in series in the parallel path. The ladder filter according to the invention can have a bandwidth which is more than twice that of the conventional ladder filter, and also has excellent out-of-band rejection characteristics.

Abstract: A multiplexer includes a transmission-side filter connected to a common terminal and a transmission input terminal, and a reception-side filter connected to the common terminal and a reception output terminal, in which the transmission-side filter includes serial arm resonators, parallel arm resonators, and a parallel arm circuit. In an interdigital transducer electrode included in the serial arm resonator connected closest to the common terminal, an electrode finger pitch at a center portion in an arrangement direction of electrode fingers is maximum among electrode finger pitches of the interdigital transducer electrode, and electrode finger pitches at end portions in the arrangement direction are minimum among the electrode finger pitches of the interdigital transducer electrode.

Abstract: An extractor includes a band pass filter and a band elimination filter. In the band pass filter, an IDT electrode in at least one of a first series arm resonator and a first parallel arm resonator that are arranged at a series arm and a parallel arm, respectively, closest to a common terminal is a first IDT electrode in which neither a plurality of first electrode fingers nor a plurality of second electrode fingers is partially missing, and an IDT electrode in at least one of the first series arm resonator or the first parallel arm resonator that does not include the first IDT electrode, second series arm resonators, and second parallel arm resonators is a second IDT electrode in which at least one of a plurality of electrode fingers and a plurality of second electrode fingers is partially missing.

Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.

Abstract: An acoustic filter apparatus is provided. In examples discussed herein, the acoustic filter apparatus includes an acoustic ladder network configured to pass a signal in a series resonance frequency and block the signal in a number of parallel resonance frequencies. The acoustic ladder network is coupled to a microelectromechanical systems (MEMS) switch circuit that includes a number of MEMS switches. The MEMS switches may be selectively controlled (e.g., closed and/or opened) to cause a modification to a selected parallel resonance frequency(s) among the parallel resonance frequencies. As such, it may be possible to flexibly configure the parallel resonance frequencies of the acoustic ladder network based on application scenarios.

Abstract: A semiconductor device package includes a first substrate, a second substrate, a first support element, a second support element and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The first substrate has a conductive pad adjacent to the first surface of the first substrate. The second substrate is disposed over the first surface of the first substrate. The first support element is disposed between the first substrate and the second substrate. The first support element is disposed adjacent to an edge of the first surface of the first substrate. The second support element is disposed between the first substrate and the second substrate. The second support element is disposed far away from the edge of the first surface of the first substrate. The electronic component is disposed on the second surface of the first substrate.

Abstract: A multiplexer includes a first filter that is a ladder elastic wave filter including series-arm resonators and parallel-arm resonators, a second filter connected to the first filter at a common connection point, and a board including an inductor pattern defining an inductor connected in parallel with the series-arm resonator, and a ground pattern provided in the layer in which the inductor pattern is provided, so as to be disposed at a distance from and adjacent to the inductor pattern. A minimum distance between the inductor pattern and the ground pattern is not greater than about 1.55 times a minimum pattern width in the ground pattern.

Abstract: An electronic device includes a support layer is provided on a piezoelectric substrate and surrounds a functional element. A cover layer is located above the support layer, and faces the piezoelectric substrate. A protective layer seals the support layer and the cover layer. The support layer is provided on at least the outer periphery of the piezoelectric substrate, and defines a hollow portion within the outer periphery of the piezoelectric substrate. The protective layer includes a first portion above the hollow portion, a second portion above the support layer, and a curved surface that is convex in an opposite direction from the piezoelectric substrate.

Abstract: The present disclosure relates to a wafer-level packaged (WLP) bulk acoustic wave (BAW) device, which includes a BAW resonator, a WLP enclosure, and an interconnect. The BAW resonator includes a piezoelectric layer with an opening, a bottom electrode lead underneath the opening, and an interface structure extending over the opening and in contact with the bottom electrode lead through the opening. The WLP enclosure includes a cap, an outer wall that extends from the cap toward the piezoelectric layer to form a cavity, and a through-WLP via that extends through the cap and the outer wall and is vertically aligned with the opening of the piezoelectric layer. A portion of the interface structure is exposed to the through-WLP via. The interconnect is formed in the through-WLP via and electrically connected to the interface structure.

Abstract: Filter devices and methods of fabricating filter devices. A filter device includes a first chip and a second chip. The first chip has a first material stack and contains one or more series resonators of a ladder filter circuit. The second chip has a second material stack and contains one or more shunt resonators of the ladder filter circuit. The first material stack and the second material stack are different.

Abstract: A wafer-level chip-scale package includes a polymeric body having a conductive via passing through the polymeric body and a piezoelectric substrate directly bonded to an upper end of the conductive via. The wafer-level chip-scale package further includes a cavity defined between a portion of the polymeric body and the piezoelectric substrate and a metal seal ring disposed in the body and having an upper end bonded to the piezoelectric substrate, the metal seal ring passing only partially through the body.

Abstract: A multiplexer includes: a substrate having a surface; another substrate having another surface facing the surface across an air gap; a filter that is located on the surface, and includes first series resonators in a first series pathway from a common terminal to a terminal, and first parallel resonators in first parallel pathways; another filter that is located on the another surface, and includes second series resonators in a second series pathway from the common terminal to another terminal, and second parallel resonators in second parallel pathways, a second parallel resonator closest to the another terminal and a second series resonator closest to the another terminal not overlapping with the first series pathway, at least a part of the second parallel pathways overlapping with at least a part of first pathways between the first series pathway and the first parallel resonators, the first parallel resonators, and the first series pathway.

Abstract: A reception filter includes a parallel arm resonator, a first longitudinally coupled resonance device including first acoustic wave resonators, and a second longitudinally coupled resonance device including second acoustic wave resonators, and cascade-connected to the first longitudinally coupled resonance device. Each of the first and second acoustic wave resonators include one end connected to a ground, the parallel arm resonator and the first and second longitudinally coupled resonance devices are provided on a piezoelectric substrate, and a ground to which the parallel arm resonator is connected, a ground to which at least one of the first acoustic wave resonators is connected, and a ground to which at least one of the second acoustic wave resonators is connected are commonly connected on the piezoelectric substrate.

Abstract: A bandpass acoustic wave filter device includes an IDT electrode and a dielectric film disposed on a piezoelectric substrate including a LiNbO3 layer, and an acoustic wave resonator is defined by the IDT electrode. The acoustic wave resonator utilizes the Rayleigh wave, and a response of an SH wave excited by the acoustic wave resonator is outside a pass band of the acoustic wave filter device.

Abstract: Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength ? of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.

Abstract: An acoustic wave device includes: a first substrate having a first surface and a side surface; an acoustic wave resonator located on the first surface of the first substrate; and a first insulator film that covers the acoustic wave resonator and is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate.

Abstract: An aluminum nitride film contains a Group IV element and a Group II or Group XII element, and an atomic composition ratio of the Group II or Group XII element to the Group IV element is less than 1.

Abstract: A Bulk Acoustic Wave (BAW) resonator filter can include a BAW resonator pass-band filter ladder, where the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, where the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, where the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.