Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be X-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal.

Abstract: Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern including an interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3. The pitch of the interleaved fingers is greater than or equal to 6 times a thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.

Abstract: An acoustic wave filter component can include a surface acoustic wave device including a first piezoelectric layer, an interdigital transducer electrode on the first piezoelectric layer, and an additional layer, such as a temperature compensation layer, over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The additional layer may be a layer on which a surface acoustic wave of the surface acoustic wave device will propagate. The bulk acoustic wave resonator may include an air cavity, where a shape of the air cavity is defined in part by the additional layer.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device that includes a first reflector over a piezoelectric layer, a second reflector over the piezoelectric layer, and an interdigital transducer electrode structure over the piezoelectric layer and positioned between the first reflector and the second reflector. The surface acoustic wave device includes a velocity adjustment layer arranged to adjust acoustic velocity in a region of the surface acoustic wave device. The velocity adjustment layer can be a high speed layer or a low speed layer.

Abstract: Aspects of this disclosure relate to a surface acoustic wave filter with an acoustic velocity adjustment structure. The surface acoustic wave filter can include a first interdigital transducer electrode disposed on a piezoelectric layer, an acoustic reflector disposed on the piezoelectric layer, and a second interdigital transducer electrode disposed on the piezoelectric layer. The second interdigital transducer electrode is longitudinally coupled to the first interdigital transducer electrode and positioned between the first interdigital transducer electrode and the acoustic reflector. The acoustic velocity adjustment structure can be positioned over at least a gap between the first interdigital transducer electrode and the second interdigital transducer electrode.

Abstract: Filter devices and methods are disclosed. A single-crystal piezoelectric plate is attached to substrate, portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern formed on the piezoelectric plate defines a low band filter including low band shunt resonators and low band series resonators and a high band filter including high band shunt resonators and high band series resonators. Interleaved fingers of interdigital transducers (IDTs) of the low band shunt resonators are disposed on respective diaphragms having a first thickness, interleaved fingers of IDTs of the high band series resonators are disposed on respective diaphragms having a second thickness less than the first thickness, and interleaved fingers of IDTs of the low band series resonators and the high band shunt resonators are disposed on respective diaphragms having thicknesses intermediate the first thickness and the second thickness.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator. The surface acoustic wave resonator includes a piezoelectric substrate, interdigital transducer electrodes disposed on an upper surface of the piezoelectric substrate, a dielectric temperature compensation layer disposed on the piezoelectric substrate to cover the interdigital transducer electrodes, and a dielectric passivation layer over the temperature compensation layer. The passivation layer may include an oxide layer configured to have a sound velocity greater than that of the temperature compensation layer to suppress a transverse signal transmission.

Abstract: Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern including an interdigital transducer (IDT), fingers of the IDT on the diaphragm. A thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate. The IDT comprises a first portion having a first pitch and a first mark and a second portion having a second pitch and a second mark not equal to the first pitch and first mark.

Abstract: An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes a first comb-shaped electrode including first electrode fingers and a second comb-shaped electrode including second electrode fingers. The IDT electrode includes a first portion in which a main electrode layer includes a first metal and a second portion in which a main electrode layer includes a second metal. The first electrode fingers and the second comb-shaped electrode include first facing portions facing each other with a gap in between, and the second electrode fingers and the first comb-shaped electrode include second facing portions facing each other with a gap in between. At least one of the first facing portions and second facing portions is the second portion, and a portion of the IDT electrode other than the second portion is the first portion.

Abstract: An elastic wave device includes an elastic wave element chip, a bump electrically connected to the elastic wave element chip, a package substrate including an electrode bonded to the bump, the elastic wave element chip mounted on the package substrate with the bump, and a sealing resin portion covering the elastic wave element chip on the package substrate. A space surrounded by the elastic wave element chip, the package substrate, and the sealing resin portion is provided. The elastic wave element chip includes a substrate having piezoelectricity, an interdigital transducer electrode, and a pad electrode. A first main surface of the substrate having piezoelectricity includes a first region and a second region closer to a second main surface than the first region. The interdigital transducer electrode is disposed in the first region. The pad electrode is disposed in the second region and bonded to the bump.

Abstract: Disclosed is a radio frequency (RF) filter that vertically integrates an acoustic wave filter with an integrated passive device (IPD) filter. The acoustic wave filter provides selectivity at fundamental frequency band while the IPD filter provides rejection at harmonic frequency bands.

Abstract: An acoustic wave resonator includes a support substrate, a piezoelectric layer that is disposed on the support substrate and is a rotated Y-cut X-propagation lithium tantalate of which a cut angle is within a range of greater than 50° and less than 150°, and a pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, an average pitch of the electrode fingers of one of the comb-shaped electrodes being equal to or greater than ½ of a thickness of the piezoelectric layer.

Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having front and back surfaces, the back surface attached to a surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least one finger of the IDT is disposed in a groove in the diaphragm. A depth of the groove is less than a thickness of the at least one finger of the IDT.

Abstract: An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and a pair of reflectors provided on both sides of the IDT electrode in a first direction on the piezoelectric substrate, the first direction being a propagation direction of an acoustic wave. The pair of reflectors include a plurality of electrode fingers and a plurality of electrode fingers, respectively, which extend in a second direction, the second direction being perpendicular to the first direction. The electrode finger widths of second end portions are greater than the electrode finger widths of first end portions. The electrode finger width at any given position in the electrode fingers is equal to or greater than the electrode finger width at a position closer than the given position to the first end portions.

Abstract: The invention provides a package structure, comprising: a substrate disposed with a solid grounded copper layer; at least two radio frequency chip modules disposed on the substrate; a plastic encapsulation disposed on the substrate, covered on a surface of the substrate, and coating the at least two radio frequency chip modules therein; a groove located between the adjacent two radio frequency chip modules, and penetrating an upper surface and a lower surface of the plastic encapsulation; a solder filling body filled in the groove, wherein an upper surface of the solder filling body is flushed with the upper surface of the plastic encapsulation; and a shielding layer covered on the upper surface and lateral surfaces of the plastic encapsulation, an upper surface of the solder filling body and lateral surfaces of the substrate; wherein a position of the solid grounded copper layer corresponds to a position of the groove, and makes contact with the solder filling body in the groove.

Abstract: An elastic wave device includes an LiNbO3 substrate, a first elastic wave resonator including a first IDT electrode and a first dielectric film, and a second elastic wave resonator including a second IDT electrode and a second dielectric film. A Rayleigh wave travels along at least one surface of the elastic wave device. A thickness of the first dielectric film differs from a thickness of the second dielectric film. A propagation direction of an elastic wave in the first elastic wave resonator coincides with a propagation direction of an elastic wave in the second elastic wave resonator. Euler angles of the LiNbO3 substrate fall within a range of (0°±5°, ?, 0°±10°).

Abstract: Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

Abstract: An acoustic wave device including series arm resonators including a first IDT electrode and parallel arm resonators including a second IDT electrode, in the first IDT electrode, a first envelope obliquely extends with respect to the acoustic wave propagation direction, and a second envelope obliquely extends with respect to the acoustic wave propagation direction, the second IDT electrode includes a central region, a first low acoustic velocity region in which an acoustic velocity is lower than an acoustic velocity in the central region, a second low acoustic velocity region in which an acoustic velocity is lower than the acoustic velocity in the central region, a first high acoustic velocity region in which an acoustic velocity is higher than the acoustic velocity in the central region, and a second high acoustic velocity region in which an acoustic velocity is higher than the acoustic velocity in the central region.

Abstract: An acoustic wave filter includes: a piezoelectric substrate; series resonators connected in series and located on the piezoelectric substrate, each of the series resonators including first electrode fingers that are arranged with a first duty ratio and excite an acoustic wave; parallel resonators connected in parallel and located on the piezoelectric substrate, each of the parallel resonators including second electrode fingers that are arranged with a second duty ratio and excite an acoustic wave, the second duty ratio in at least one parallel resonator being less than the first duty ratio in at least one series resonator; and a dielectric film that has a temperature coefficient of elastic modulus that is opposite in sign to that of the piezoelectric substrate, is located on the piezoelectric substrate so as to cover the first and second electrode fingers, has a film thickness greater than those of the first and second electrode fingers.

Abstract: Acoustic filters and methods of fabrication are disclosed. A filter device includes a substrate and a single-crystal piezoelectric plate, a back surface of the piezoelectric plate attached to a surface of the substrate. The filter device includes a plurality of acoustic resonators including one or more shunt resonators and one or more series resonators. Each of the plurality of acoustic resonators includes an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on a respective diaphragm formed by a respective portion of the piezoelectric plate that spans a respective cavity in the substrate. A divided frequency setting layer is formed on at least some of the one or more shunt resonators but not on the one or more series resonators.

Abstract: An acoustic wave filter device includes a longitudinally coupled resonator acoustic wave filter on a series arm that connects an input terminal and an output terminal, first and second parallel arm resonators on first and second parallel arms that connect the series arm and a ground potential, an input-side ground port of the longitudinally coupled resonator acoustic wave filter and a ground port of at least one of the first and second parallel arm resonators are connected in common, an output-side ground port of the longitudinally coupled resonator acoustic wave filter and a ground port of at least another of the first and second parallel arm resonators are connected in common, and an electrostatic capacitance of the first parallel arm resonator is different from an electrostatic capacitance of the second parallel arm resonator.

Abstract: A method of fabricating an electronics package includes forming a cavity in a first surface of a semiconductor substrate, forming one or more passive devices on the semiconductor substrate, forming a microelectromechanical device on a piezoelectric substrate, and bonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity.

Abstract: A reconfigurable microacoustic filter is specified which comprises a ladder-type-like filter topology and a suitably placed adjustable capacitive element.

Abstract: A multiplexer includes: a first terminal; a second terminal; a third terminal; a first filter connected between the first and second terminals, including a first capacitor, a first inductor, and one or more first acoustic wave resonators, and having a first passband; a second filter connected between the first and third terminals, including a second capacitor, a second inductor, and one or more second acoustic wave resonators, and having a second passband higher than the first passband; a substrate having a surface on which at least one first acoustic wave resonator of the one or more first acoustic wave resonators and at least one second acoustic wave resonator of the one or more second acoustic wave resonators are located; and a metal structure located on the surface and located between the at least one first acoustic wave resonator and the at least one second acoustic wave resonator.

Abstract: A first filter of a multiplexer has a ladder filter structure including a plurality of series resonators and a plurality of parallel resonators. Each resonator is an acoustic wave resonator that includes an IDT electrode including a pair of comb-shaped electrodes. A portion having a unit area, in a plan view of a substrate on which the resonators are provided, has a larger weight in at least one of the IDT electrode of the series resonator that is closest to the common terminal, among the series resonator, and the IDT electrode of the parallel resonator that is closest to the common terminal than in the IDT electrode of each of the remainder of the plurality of acoustic wave resonators.

Abstract: Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having front and back surfaces. An acoustic Bragg reflector is sandwiched between a surface of the substrate and the back surface of the piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT and the piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a primary acoustic mode within the piezoelectric plate. The acoustic Bragg reflector comprises alternating SiO2 and diamond layers and is configured to reflect the primary acoustic mode.

Abstract: An acoustic wave filter device includes a piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer, and first and second IDT electrodes on the piezoelectric layer to define acoustic wave resonators. An acoustic wave resonator of a series-arm resonator portion closest to an antenna end and/or an acoustic wave resonator of a parallel-arm resonator portion closest to the antenna end includes the first IDT electrode including first and second electrode fingers, and the remaining acoustic wave resonators include the second IDT electrode including third and fourth electrode fingers. In the first IDT electrode, a central area, first and second low-acoustic-velocity areas, and first and second high-acoustic-velocity areas extend along a direction perpendicular or substantially perpendicular to an acoustic wave propagating direction.

Abstract: A filter device includes series and parallel arm resonators provided at a filter chip and inductors electrically connected in series with respective ones of the parallel arm resonators. A first inductor having the highest inductance of the inductors is electrically connected in series with a first parallel arm resonator having the highest anti-resonant frequency of the parallel arm resonators. One end of the first parallel arm resonator and one end of a second parallel arm resonator in other ones of the parallel arm resonators are electrically connected to a same wiring line in wiring lines separated by the series arm resonators on a line electrically connecting an input terminal and an output terminal of the filter chip. The other ends of the first and second parallel arm resonators are respectively electrically connected to first and second ground terminals of the filter chip.

Abstract: An acoustic wave device includes a piezoelectric substrate in which a reverse-velocity surface is convex and an IDT electrode on the piezoelectric substrate. When an acoustic wave propagation direction is a first direction and a direction perpendicular or substantially perpendicular to the first direction is a second direction, the portion of the IDT electrode where first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region centrally located in the second direction and a first and second edge regions located on two sides of the center region. Recesses 17 and 18 are respectively provided in portions of the piezoelectric substrate located in the first and second edge regions between the portions where the first and second electrode fingers are provided.

Abstract: Methods of making packaged surface acoustic wave devices are provided. The method may include forming a photosensitive resin coat over a cavity-defining structure encapsulating a surface acoustic wave device. The photosensitive resin coat may be formed using a spin-coating process, and then patterned to form a desired shape. Portions of the photosensitive resin may be removed from areas near the edge of the die, to facilitate separation of a wafer into individual dies. The method may also include forming a conductive structure using a plating process, where the conductive structure is located between the resin coat and the cavity defining structure. The photosensitive resin can include a phenol resin. The packaged surface acoustic wave devices made using a photosensitive resin coat may be relatively thin, and may have a height of less than 220 micrometers.

Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate, a piezoelectric plate having front and back surfaces, and an acoustic Bragg reflector between a surface of the substrate and the back surface of the piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT is configured to excite a shear primary acoustic mode in the piezoelectric plate in response to a radio frequency signal applied to the IDT. At least one finger of the IDT is disposed in a groove in the piezoelectric plate.

Abstract: A receiving filter includes a reception terminal which outputs reception signals from an antenna terminal, a second DMS filter configured by a longitudinally coupled double-mode type acoustic wave filter which is located in a signal path from the antenna terminal to the reception terminal, a fourth GND terminal given a reference potential, and a fourth GND wiring connected to the fourth GND terminal and to the second DMS filter. A reception terminal conductor configured by the reception terminal and the reception terminal wiring connected to the reception terminal and A fourth GND conductor configured by the fourth GND terminal and the fourth GND wiring are adjacent and are capacity-coupled with respect to each other.

Abstract: In an acoustic wave device, an antenna end resonator electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is equal to or less than about 3.5?. A cut angle of the piezoelectric layer of the first acoustic wave resonator is within a range of ?B±4°. The cut angle of the piezoelectric layer of the second acoustic wave resonator has a larger difference from ?B (°) than the cut angle of the piezoelectric layer of the first acoustic wave resonator.

Abstract: An extractor includes a band elimination filter that is connected between a common terminal and a first input-output terminal and that has a stop band equal or substantially equal to a first frequency band, and a band pass filter that is connected between the common terminal and a second input-output terminal and that has a pass band equal or substantially equal to a second frequency band that overlaps the first frequency band. The band pass filter includes, series arm resonators, three or more parallel arm resonators, and three or more inductors that are connected between the ground and the parallel arm resonators. The L value of a first inductor that is connected and nearest to the common terminal is smaller than the L value of a third inductor, and the L value of a second inductor that is connected and second-nearest to the common terminal is smaller than the L value of the third inductor.

Abstract: A duplexer includes a surface acoustic wave (SAW) device comprising a transmit filter and a receive filter formed on a piezoelectric substrate. The transmit filter includes a first transmit shunt resonator connected to a first transmit-filter ground terminal. The receive filter includes a first receive shunt resonator connected to a first receive-filter ground terminal. A ground coupling capacitor is connected between the first transmit-filter ground terminal and the first receive-filter ground terminal.

Abstract: An acoustic wave device includes: a first substrate made of a piezoelectric material; an acoustic wave element located on the first substrate; a bump located on the first substrate; a second substrate located on the first substrate through the bump, the second substrate facing the first substrate across an air gap; and a support layer that is located in at least a part of a periphery of the first substrate, is in contact with a side surface of the first substrate, and has a less linear thermal expansion coefficient than the first substrate.

Abstract: A high-pass filter includes: at least one capacitor located in a first pathway between input and output terminals and connected between the input and output terminals; at least one inductor, a first end of the at least one inductor being coupled to the first pathway, a second end of the at least one inductor being coupled to a ground; at least one first acoustic wave resonator located in a second pathway connected in parallel to the first pathway between the input and output terminals, the at least one first acoustic wave resonator being connected in parallel to the at least one capacitor; and at least one second acoustic wave resonator, a first end of the at least one second acoustic wave resonator being coupled to the second pathway, a second end of the at least one second acoustic wave resonator being coupled to a ground.

Abstract: An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes a first busbar and a second busbar that oppose each other, multiple first electrode fingers, multiple second electrode fingers, multiple first offset electrodes, and multiple second offset electrodes. A virtual line connecting the leading ends of the first electrode fingers is referred to as a first envelope. The first envelope is included relative to the acoustic-wave propagation direction. A virtual line connecting the leading ends of the second electrode fingers is referred to as a second envelope. The second envelope is inclined relative to the acoustic-wave propagation direction. The direction in which the first offset electrodes extend and the direction in which the second offset electrodes extend inclined relative to the direction orthogonal or substantially orthogonal to the acoustic-wave propagation direction.

Abstract: The acoustic wave filter (10A) includes a parallel-arm resonant circuit (12p). The parallel-arm resonant circuit (12p) includes a parallel-arm resonator (p1) and a frequency variable circuit (72p) that are connected in parallel. The frequency variable circuit (72p) includes a parallel-arm resonator (p2) that has a resonant frequency higher than that of the parallel-arm resonator (p1) and a switch (SW1) element. A frequency difference between a resonant frequency on a higher frequency side of the parallel-arm resonant circuit (12p) in a case where the switch (SW1) is OFF and a resonant frequency on a higher frequency side of the parallel-arm resonant circuit (12p) in a case where the switch (SW1) is ON is equal to or more than a frequency difference between a low frequency end frequency of the second attenuation band and a low frequency end frequency of the first attenuation band.

Abstract: A surface acoustic wave (SAW) device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode located on an upper surface of the piezoelectric substrate, a cover covering the upper surface of the piezoelectric substrate from above the IDT electrode, at least one first via conductor extending through at least part of the cover from the upper surface of the piezoelectric substrate to an upper surface of the cover, at least one second via conductor located, on the piezoelectric substrate, inward from the first via conductor in a plan view, extending through at least part of the cover from the upper surface of the piezoelectric substrate to the upper surface of the cover, and having a smaller diameter than the first via conductor, and a conductive layer located on the upper surface of the cover and extending over an upper end of the second via conductor.

Abstract: A first filter of a multiplexer includes serial resonators and parallel resonators that are acoustic wave resonators. A first of the serial resonators that is closer to a common terminal than the other serial resonators is connected to the common terminal without the parallel resonators interposed therebetween. Each of the elastic wave resonators includes a substrate having piezoelectricity, an IDT electrode provided on the substrate, and a dielectric layer provided on the substrate to cover the IDT electrode. A thickness of the dielectric layer of the first serial resonator is smaller than a thickness of each of the dielectric layers of the remainder of the elastic wave resonators.

Abstract: An elastic wave device includes a piezoelectric substrate, and elastic wave elements on the piezoelectric substrate and including IDT electrodes, respectively. The IDT electrode of a first of the elastic wave elements includes first and second busbars, and the IDT electrode of a second of the elastic wave elements includes third and fourth busbars. The second busbar and the third busbar extend parallel or substantially parallel to each other, and are spaced by a gap in a direction perpendicular or substantially perpendicular to an elastic-wave propagating direction. Each of the second and third busbars includes first and second electrode layers at least a portion of which is laminated on the first electrode layer. The second electrode layer of the second busbar is cut in at least one location in a direction crossing the elastic-wave propagating direction.

Abstract: A filter includes a series arm resonator, a first parallel arm resonance circuit, and a second parallel arm resonance circuit. The first parallel arm resonance circuit includes: a first parallel arm resonator connected to a first node; a first capacitor and a first switch connected together in parallel and connected in series with the first parallel arm resonator; and a first inductor provided on a path connecting the node and ground to each other via the first switch. The second parallel arm resonance circuit includes: a second parallel arm resonator connected to a second node; a second capacitor and a second switch connected together in parallel and connected in series with the second parallel arm resonator; and a second inductor provided on a path connecting the second node and ground to each other via the second switch. The first and second inductor have different inductance values.

Abstract: A filter includes a series arm resonator, a first parallel arm resonance circuit and a second parallel arm resonance circuit. The each of the first parallel arm resonance circuit and the second parallel arm resonance circuit includes: a parallel arm resonator that is connected to a node; a pair of elements consisting of a capacitor and a switch, which are connected in parallel with each other, that is connected in series with the parallel arm resonator; and an inductor that is provided on a path that connects the node and ground to each other via the switch. The inductance value of the inductor of the first parallel arm resonance circuit and the inductance value of the inductor of the second parallel arm resonance circuit are substantially equal to each other.

Abstract: A surface acoustic wave resonator includes first and second surface acoustic wave resonator connected in series, and a third surface acoustic wave resonator connected in series with the second surface acoustic wave resonator. Each of the first to third surface acoustic wave resonators includes a pair of comb-shaped electrodes in which electrode fingers of one of the comb-shaped electrodes and electrode fingers of the other one of the comb-shaped electrodes are alternately arranged. The second surface acoustic wave resonator has a lower ratio of a width of the electrode fingers to a pitch between the electrode fingers than the first and third surface acoustic wave resonators.

Abstract: A SAW element configured to suppress spurious emissions resulting from non-periodicity of an IDT electrode finger arrangement. In one example, the SAW element is a resonator comprising an IDT electrode including a first plurality of IDT electrode fingers connected to a first busbar and a second plurality of IDT electrode fingers connected to a second busbar, and reflectors having a plurality of reflector fingers. The pluralities of first and second IDT electrode fingers are alternatively connected to each busbar by either normal connections or reversed connections and include regions arranged by at least two different types of pitches. The normal connections are such that either the odd-numbered or even-numbered IDT electrode fingers connect to the first busbar, and the reversed connections are such that the opposite group of IDT electrode fingers connect to the first busbar.

Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces. An acoustic Bragg reflector is sandwiched between the surface of the substrate and the back surface of the lithium niobite plate. An interdigital transducer (IDT) is formed on the front surface of the LN plate. The Euler angles of the lithium niobate plate are [0°, ?, 90° ], where ? is greater than or equal to ?15° and less than 0°.

Abstract: A duplexer is disclosed. In an embodiment, the duplexer includes a Tx filter and an Rx filter, wherein the Tx filter includes first series-interconnected basic elements, each first basic element having a first electroacoustic resonator and first impedance converters interconnected in series between the first basic elements, wherein the Rx filter comprises second series-interconnected basic elements, each second basic element having a second electroacoustic resonator and second impedance converters interconnected in series between the second basic elements, wherein the first impedance converters in the Tx filter are impedance inverters, wherein the first resonators of the first basic elements in the Tx filter are only series resonators, wherein the second impedance converters in the Rx filter are admittance inverters, and wherein the second resonators of the second basic elements in the Rx filter are only parallel resonators.

Abstract: Provided is a bus network system including: a master node switch; and a plurality of slave node switches, wherein each of the plurality of slave node switches includes at least one band limit switch configured to transmit signals in a given band, and each of the plurality of slave node switches is configured to be physically on/off controlled.

Abstract: A filter feeding network, including a dielectric substrate, where a surface of the dielectric substrate's one side is provided a microstrip line, and a surface of the dielectric substrate's other side is provided with a metal ground; the microstrip line includes first and second power division circuits, and first and second filter circuits; an input and output end of the first filter circuit are respectively connected to the first power division circuit's input and output end correspondingly, the second filter circuit's input and output end are respectively connected to the second power division circuit's input and output end correspondingly, and the input end of the first filter circuit and second filter circuit are in conduction with the metal ground; and first and second power division circuit's output end feeds at least two array antenna units for ?45° polarization and +45° polarization respectively.