Abstract: The present disclosure provides a MEMS phase shifter and a manufacturing method thereof. The MEMS phase shifter includes a first substrate having a first surface, a coplanar waveguide on the first surface of the first substrate and including a first conductive wire and two second conductive wires on two sides of the first conductive wire and insulated from the first conductive wire, and a plurality of capacitance bridges on a side of the coplanar waveguide away from the first substrate. The plurality of capacitance bridges are arranged at intervals and insulated from the first conductive wire and the second conductive wire, and each of the plurality of capacitance bridges intersects the first conductive wire. The first surface of the first substrate includes a first groove, and the first conductive wire is suspended above the first groove.

Abstract: A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there i

Abstract: A redundant system for processing at least one signal is described wherein the redundant system has N+1 devices include N operational devices and one reserve device. The N operational devices and the reserve device are interconnected with each other. The redundant system includes a system control integrated within one of the devices of the redundant system. The redundant system further includes switches that are associated with the operational devices. In case of a failure of a respective operational device, the system control is configured to cause at least one of the devices to operate the switch associated with the respective operational device having the failure. Further, a method of operating a redundant system for processing at least one signal is described.

Abstract: A system for secure data transfer using air gapping. A first module includes: a first module communication interface configured to communicate with a public network. A second module includes: a first read-only memory storing an operating system; a second read-only memory storing sets of private keys of the second module and at least one public key of another remote entity; a cryptographic unit configured to encrypt and/or decrypt data using the keys stored in the second read-only memory. A bridge module includes: a bridge module controller; memory for storing data; a switch configured to selectively connect the bridge module data interface to either the first module data interface or to the second module data interface such that the first module data interface is never connected with the second module data interface.

Abstract: In one embodiment, an antenna system is described. The antenna system includes a primary antenna on an aircraft. The primary antenna is mechanically steerable and has an asymmetric antenna beam pattern with a narrow beamwidth axis and a wide beamwidth axis at boresight. The antenna system also includes a secondary antenna on the aircraft, the secondary antenna including an array of antenna elements. The antenna system also includes an antenna selection system to control communication of a signal between the aircraft and a target satellite via the primary antenna and the secondary antenna. The antenna selection system switches communication of the signal from the primary antenna to the secondary antenna when an amount of interference with an adjacent satellite reaches a threshold due to the wide beamwidth axis of the asymmetric antenna beam pattern.

Abstract: A phase shifter and a method for manufacturing the same are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs and on the substrate, and at least one film bridge on the substrate and spaced apart from the signal line. Two adjacent ground lines of the ground lines are on both sides of the signal line and spaced apart from the signal line, respectively, and both ends of each film bridge are on the two adjacent ground lines, respectively. The signal line is in a space surrounded by each film bridge and the substrate. Each film bridge includes a metal layer opposite to the signal line, the metal layer has a plurality of openings therein, and the plurality of openings penetrate through the metal layer in a thickness direction of the metal layer.

Abstract: A waveguide switch for switching between an ON-state and an OFF-state for a waveguide channel, including: a moveable waveguide switch body including: an input opening for receiving an electromagnetic wave, an output opening for releasing an electromagnetic wave, wherein the waveguide switch body further includes a blocking element arranged such that in the ON state, an electromagnetic wave may pass from the input opening to the output opening, and in the OFF state the blocking element substantially impedes an electromagnetic wave traveling from the input opening to the output opening, whereby the switch from the ON state to the OFF state is a rotational or translation movement of the waveguide switch body. Also, a waveguide system employing such a switch and a method of manufacturing such a switch. Contactless switching is provided in a high-frequency system.

Abstract: An apparatus suitable for detecting radiation, comprising: a radiation absorption layer comprising a semiconductor, a first electrical contact and a second electrical contact, the first electrical contact positioned across the semiconductor from the second electrical contact; a DC-to-DC converter configured to apply a DC voltage between the first electrical contact and the second electrical contact, the DC-to-DC converter comprising micro-electromechanical switches.

Abstract: An electronic device is provided. The electronic device includes a housing including a first plate facing a front of the electronic device, a second plate facing away from the first plate, and a side bezel structure surrounding a space between the first plate and the second plate, and a printed circuit board disposed at least at a portion of the space and including at least one processor, an antenna module, and at least one light source controlled by the at least one processor, wherein the side bezel structure may include at least two segmented antenna apparatuses and at least one photo-conductive material disposed between the segmented antenna apparatuses, and wherein the printed circuit board may include the at least one light source separated by a preset distance from the at least one photo-conductive material in a direction corresponding to the at least one photo-conductive material.

Abstract: A microelectromechanical switch having improved isolation and insertion loss characteristics and reduced liability for stiction. The switch includes a signal line having an input port and an output port between first and second ground planes. The switch also includes a beam for controlling activation of the switch. In some embodiments, the switch further includes one or more defected ground structures formed in the first and second ground planes, and a corresponding secondary deflectable beam positioned over each defected ground structure. In some embodiments, the switch includes a metamaterial structure for generating a repulsive Casimir force.

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

Abstract: The present invention relates to a substrate for supporting an antenna pattern. The substrate includes a porous anodic oxide layer having a plurality of pores formed by anodizing metal. A metallic material is filled in at least a part of the pores.

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract: In some embodiments, a microelectromechanical system may include a semiconductor substrate, a plurality of wiring layers, and a stop. The plurality of wiring layers may be coupled to a first surface of the semiconductor substrate. The stop may be coupled to the plurality of wiring layers. In some embodiments, at least a portion of the plurality of wiring layers between the stop and the first surface of the substrate comprises an insulating material. In some embodiments, at least the portion excludes wiring within. In some embodiments, a volume of the portion may be determined by a use of the microelectromechanical system. In some embodiments, the portion may inhibit, during use, electrical failures adjacent to the stop.

Abstract: Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer with a pattern for a first portion of a connector. A first metal layer is plated through the patterned first photoresist layer to form the first portion of the connector which has a first width. A second photoresist layer is formed over the interconnect structure and the first portion of the connector. The second photoresist layer is patterned with a pattern for a second portion of the connector. A second metal layer is plated through the patterned second photoresist layer to form the second portion of the connector over the first portion of the connector. The second portion of the connector has a second width, the second width being less than the first width.

Abstract: The invention provides a MEMS device with enhanced structural strength. The MEMS device includes a plurality of metal layers, including a top metal layer with a plurality of metal segments. The metal segments are individually connected to an adjacent metal layer immediately under the top metal layer through at least one supporting pillar, and there is no dielectric layer between the metal segments and the adjacent metal layer immediately under the top metal layer. The metal layers except the top metal layer are respectively connected to their adjacent metal layers through at least one supporting pillar and a dielectric layer filling in between.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. A wiring layer is formed on a substrate comprising actuator electrodes and a contact electrode. A MEMS beam is formed above the wiring layer and at least one spring is formed and attached to at least one end of the MEMS beam. At least one spring has a predetermined spring constant based on a coefficient of thermal expansion (CTE) mismatch between materials of the MEMS structure and the spring. Additionally, an array of mini-bumps is formed between the wiring layer and the MEMS beam. A size of a space between fixed actuator electrodes or dummy actuators is determined based on a lateral shift of the MEMS beam.

Abstract: Reconfigurable antennas in an ad-hoc network are provided where all nodes employ MIMO/SIMO/MISO communication techniques. Three types of reconfigurable antennas: Reconfigurable Printed Dipole Array (RPDA), Reconfigurable Circular Patch Antenna (RCPA) and Two-Port Reconfigurable CRLH Leaky Wave Antennas are used. The RPDA, RCPA and the CRLH Leaky Wave antennas have a different number of configurations as well as different degrees of pattern diversity between possible configurations. To effectively use these antennas in a network, the performance of centralized and decentralized antenna configuration selection schemes are quantified for reconfiguration at one or both link ends. The sum capacity of the network is used as a metric to quantify the performance of these antennas in measured and simulated network channels.

Abstract: A MEMS device includes a bottom plate structure supporting a conductive electrode. A flexible conductive top plate movably supported by a flexure is affixed to a small peripheral portion of the top plate that is aligned with the electrode. Drive circuitry applies a high level of a drive voltage signal between the electrode and the top plate to produce an attracting electrostatic force between the top plate and the electrode sufficient to overcome the flexure and draw the top plate against the electrode. The drive circuitry later applies a low level of the drive voltage signal to remove the electrostatic force and allow the flexure to peel the peripheral portion away from the electrode. Additional drive voltage signals may be applied to additional electrodes to draw additional peripheral portions of the top plate against the additional electrodes and successively removed to allow peripheral portions of the top plate to be sequentially peeled away from the electrodes.

Abstract: The present disclosure discloses a contact structure for electromechanical switch. The contact structure is using the design including a PCB and a moving contact to allow the actuations and have great switch characteristics whose range is from DC to high frequency.

Abstract: Miniaturized devices such as MEMS switches (10) have encapsulating enclosures (100). The enclosure (100) and the remainder of the switch (10) are fabricated on a concurrent basis by depositing layers of an electrically-conductive material, such as copper, on a substrate (26).

Abstract: Implementations are presented herein that include an antenna switch that includes a plurality of ports. A bandstop filter is coupled to at least one of the plurality of ports of the antenna switch and the bandstop filter is configured to attenuate a disturbing frequency. A transistor is configured to receive a control signal and to switch on the bandstop filter responsive to the control signal.

Abstract: Contrary to phase shifters which require complimentary polarity control voltages, a phase shifter may be driven with a single polarity control voltage. The phase shifter comprises an input node in communication with both a high pass network and a low pass network which are both in communication with an output node, where the phase shifter further comprises a first single pole double throw switch and a second single pole double throw switch configured to selectively pass an RF signal from the input node to the output node by way of one of said high pass network and said low pass network. Furthermore, the first and second single pole double throw switches are configured to select between the high pass network and the low pass network based on a single control signal having a voltage greater than or less than a reference voltage.

Abstract: An impedance matching switch circuit module includes a first switch device connected to first and second high-frequency input/output terminals, a second switch device connected between the first high-frequency input/output terminal and a first matching terminal, and a third switch device connected between the second high-frequency input/output terminal and a second matching terminal. Impedance matching elements having appropriately set element values (inductances or capacitances) are connected to the first and second high-frequency input/output terminals and the first and second matching terminals, and on/off control is performed for the first, second, and third switch devices.

Abstract: A contact structure for electromechanical switch includes a static contact and a moving contact to allow many kinds of actuations and provide great switch characteristics, such as high isolation and low insertion loss, for using in the applicable range from DC to high frequency microwave. In the contact structure, there is a gap disposed between the static contact and the moving contact so that the static contact and the moving contact are parallel with each other.

Abstract: According to one embodiment, an electrostatic actuator includes a substrate, an electrode unit, a film body unit, and an urging unit. The electrode unit is provided on the substrate. The film body unit is provided to oppose the electrode unit and is conductive. The urging unit is configured to support the film body unit and includes a connection unit connected to the substrate and an elastic unit provided between the connection unit and the film body unit. A contacting state and a separated state are possible for the electrode unit and the film body unit according to a voltage applied to the electrode unit. The elastic unit has a branch portion between one end of the elastic unit connected to the connection unit and multiple one other ends of the elastic unit connected to the film body unit.

Abstract: Provided are radio frequency electromagnetic energy switches and processes of regulating the transmission of RF energy, that for the first time successfully employ a ChG PCM as a RF switching material.

Abstract: A variable resonator includes a first transmission line 101, a second transmission line 102 and a plurality of switch circuits 150. The electrical length of the first transmission line 101 is equal to the electrical length of the second transmission line 102. The characteristic impedance for the even mode of the first transmission line 101 is equal to the characteristic impedance for the even mode of the second transmission line 102. The characteristic impedance for the odd mode of the first transmission line 101 is equal to the characteristic impedance for the odd mode of the second transmission line 102. Each switch circuit 150 is connected to any of the first transmission line 101 and the second transmission line 102, and one of the switch circuits 150 is turned on.

Abstract: Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.

Abstract: A parallel capacitor varactor shunt switch device may include a shunt layer, a coplanar waveguide (CPW) layer, and a tunable thin film dielectric layer that is interposed between the shunt layer and the CPW layer. The tunable thin film dielectric layer electrically isolates the shunt layer from the CPW layer. The shunt layer includes a plurality of parallel shunt lines. The CPW layer includes a CPW signal transmission line with two CPW ground lines parallel to the CPW signal transmission line. A plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the CPW signal transmission line, each varactor area corresponding to an overlap of the CPW signal transmission line with a respective shunt line and each respective parallel shunt line and its corresponding varactor area defines a capacitor.

Abstract: A method for manufacturing a micro electro-mechanical system (MEMS) switch system (600, 700) includes etching each of a plurality of base circuit layers (425) and a plurality of passive component substrate layers (412, 418, 42, 426). The method continues with laser milling of a first dielectric film (406) to create a spacer layer (405). A metal cladding (402, 403) formed on a flexible dielectric film layer 404 is etched so as to form a plurality of switch component features. Further laser milling is performed with respect to the flexible dielectric film layer to form at least one switch structure (448, 450). Thereafter, a stack (400) is assembled which is comprised of the spacer layer disposed between the flexible dielectric film layer and the plurality of base circuit layers. Additional layers can also be included in the stack. When the stack is completed, heat and pressure are applied to join the various layers forming the stack.

Abstract: Various embodiments provide materials and methods for an optically pumped switch device, an optically pumped reconfigurable antenna system (OPRAS), and their related antenna devices. In one embodiment, the switch devices and the antenna devices can have a photoconductive cell. The photoconductive cell can include a semiconductive substrate that is conductive to reflect a radio frequency (RF) signal in response to an optical signal.

Abstract: An electrostatic switch for high frequency and a method for manufacturing the same are disclosed. The electrostatic switch for high frequency in accordance with an embodiment includes: a first substrate module including a first substrate, an electrode part and a pair of CoPlanar Waveguides (CPWs), the electrode part being installed on the first substrate, the pair of CPWs being formed on either side of the electrode part and guiding an RF signal to travel; and a second substrate module being joined to the first substrate module, the second substrate module including a membrane and a bias line, the membrane being installed on a second substrate and bent by bias voltage supplied to the electrode part and being coupled to the pair of CPWs across an upper area of the electrode part in order to be short-circuited to the electrode part, the bias line being connected to the electrode part.

Abstract: Methods and systems for MEMS switches fabricated in an integrated circuit package are disclosed and may include controlling switching of RF components, and signals handled by the RF components, within an integrated circuit. One or more MEMS switch arrays embedded within a multi-layer package bonded to the integrated circuit may be utilized for the switching and signal control. The RF components and one or more MEMS switch arrays may be integrated in the multi-layer package. The RF components may be electrically coupled to the integrated circuit via the one or more MEMS switch arrays. The MEMS switch arrays may be electrostatically or magnetically activated. The RF components may be coupled to one or more capacitor arrays in the integrated circuit. The RF components may include transformers, inductors, transmission lines, microstrip and/or coplanar waveguide filters and/or surface mount devices. The integrated circuit may be coupled to the multiple-layer package utilizing a flip-chip bonding technique.

Abstract: Implementations are presented herein that include an antenna switch that includes a plurality of ports. A bandstop filter is coupled to at least one of the plurality of ports of the antenna switch and the bandstop filter is configured to attenuate a disturbing frequency. A transistor is configured to receive a control signal and to switch on the bandstop filter responsive to the control signal.

Abstract: An optoelectronic switch using millimeter wavelength (MMW) is provided. An r voltage pulse is applied to a device under test (DUT) for switching the photo-generated MMW power The DUT is operated under reverse bias. An optical light source with modulated MMW envelop is injected on to DUT for MMW power generation. Thus, based on change of the reverse bias, speed is violently changed and the MMW optoelectronic switch is thus obtained.

Abstract: A circuit includes an amplifier having an input and an output; and at least one transistor comprising at least one terminal and at least one isolated well. The input of the amplifier is electrically connected to the at least one terminal of the transistor; and the output of the amplifier is electrically connected to the at least one isolated well of the at least one transistor.

Abstract: A switched capacitor circuit for use at at least one operating frequency is provided. The switched capacitor may include an inductive element having a first terminal coupled to a switching voltage and a second terminal. The switched capacitor circuit may further include a hetero-junction bipolar transistor (HBT) having a base terminal coupled to the second terminal of the inductive element, a first conducting terminal, and a second conducting terminal coupled to a voltage supply terminal.

Abstract: A segmented transmission signal circuit is provided with a parallel bus of data transmission. The bus includes a plurality of sections, each section transmits a corresponding parallel data of multiple bits, and the parallel data corresponding to different sections are in different bit orders.

Abstract: The invention relates to microelectromechanical systems (MEMS), and more particularly, to MEMS switches using magnetic actuation. The MEMS switch may be actuated with no internal power consumption. The switch is formed in an integrated solid state MEMS technology. The MEMS switch is micron and/or nanoscale, very reliable and accurate. The MEMS switch can be designed into various architectures, e.g., a cantilever architecture and torsion architecture. The torsion architecture is more efficient than a cantilever architecture.

Abstract: An electrostatic actuator includes first and second lower electrodes formed apart from each other above a substrate, an electrode portion formed above the first and second lower electrodes and first and second upper electrodes, a distance between the first upper electrode and the first lower electrode at a first portion being greater than that at a second portion, a distance between the second upper electrode and the second lower electrode at a third portion being greater than that at a fourth portion, a first boundary portion between the first and third upper electrodes having a convex shape, a second boundary portion between the second and third upper electrodes having a convex shape, and the electrode portion driving the third upper electrode, and first and second layers formed in the first and second boundary portions.

Abstract: A circulator with at least three ports (p1, p2, p3) comprises two identical electromechanical micro-switches of the series type (MEMS1, MEMS2) formed on the same substrate, a first micro-switch being disposed in order to allow the transmission of a radiofrequency or microwave signal from an input port (p1) to a port (p2) designed to be connected to an antenna, a second micro-switch being disposed in order to allow the signal transmission between the port (p2) designed to be connected to an antenna and said output port. Application to a radiofrequency or microwave telecommunications system.

Abstract: A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.

Abstract: Systems and methods for controlling a micro electromechanical device using power actuation are disclosed. The disclosed micro electromechanical systems comprise at least one electrostatically actuatable micro electromechanical device and an actuation device. The micro electromechanical device comprises a first conductor and a second conductor having a moveable portion which in use may be attracted by the first conductor as a result of a predetermined actuation power. The actuation device comprises a high frequency signal generator for generating at least part of the actuation power by means of a predetermined high frequency signal with a frequency higher than the mechanical resonance frequency of the moveable portion of the micro electromechanical device.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.