Abstract: An electrical heater device comprises an heating element, which includes two electrodes and a heating body made of a polymer-based material having a PTC effect, in contact with the electrodes. Each electrode comprises a meshed structure, which extends in a length direction and in a width direction, and is embedded at least partially in the heating body. Each electrode further comprises an electrical-distribution element which is fixed to the meshed structure and includes a distribution portion that extends in the length direction, or in the width direction, or in both the length and width directions of the meshed structure.

Abstract: A method of running a printed circuit board (PCB) trace on a PCB. The PCB comprising a plurality of PCB layers. The method comprising forming a conductive trace on at least one of the plurality of PCB layers; coupling a first portion of the conductive trace to a capacitor formed on at least one of the plurality of PCB layers; coupling a second portion, different from the first portion, of the conductive trace to a conductive material formed within a first via extending through two or more of the plurality of PCB layers; and configurably setting a length of a conductive path of the conductive trace according to a predetermined impedance. The capacitor is separated laterally in a plan view at a first distance from the first via. The length of the conductive trace in the plan view is greater than the first distance. The conductive path of the conductive trace of the length has the predetermined impedance.

Abstract: A rotary device includes a rotatable member and a limiting member. The rotatable member includes a positioning mechanism, the positioning mechanism includes a stopping member and a positioning member. When the rotatable member rotates along a first rotation direction to make the limiting member abut against the positioning member, the positioning member is pushed by the limiting member to move away from the stopping portion and rotate relative to the stopping member, so that the positioning member to passes through the limiting member. When the rotatable member rotates along a second rotation direction opposite to the first rotation direction to make the limiting member abut against the positioning member, the positioning member is pushed by the limiting member to move close to the stopping portion, so that the positioning member is stopped between the limiting member and the stopping portion, to position the rotatable member.

Abstract: A flux cored welding electrode for welding a 5-9% nickel steel workpiece by a flux cored arc welding (FCAW) process comprises a particulate core and a metal sheath surrounding the particulate core, wherein chemical composition of the metal sheath and the chemical composition of the particulate core are selected so that the weld deposit composition produced by the welding electrode comprises ?0.15 C, ?6.0 Mn, ?1.0 Si, ?0.025 P, ?0.020 S, 12.0-20.0 Cr, ?55.0 Ni, 5.5-7.5 Mo, 1.2-1.8 Nb+Ta, ?12 Fe, ?0.3 Cu and 0.5-4.0 W.

Abstract: A multi chip module having a current sensing circuit and a semiconductor half bridge configuration having two vertically stacked field effect transistor dies that are connected by horizontally extending tap clips at respective opposite sides of their channels, wherein the current sensing circuit is coupled to two checkpoints, at least one being located on one of the tap clips so as to measure a voltage drop over a predetermined portion of the tap clip acting as a shunt resistor for sensing a current that is provided to a switching node of the half bridge configuration.

Abstract: Embodiments of mechanisms of forming a radio frequency area of an integrated circuit are provided. The radio frequency area of an integrated circuit structure includes a substrate, a buried oxide layer formed over the substrate, and an interface layer formed between the substrate and the buried oxide layer. The radio frequency area of an integrated circuit structure also includes a silicon layer formed over the buried oxide layer and an interlayer dielectric layer formed in a deep trench. The radio frequency area of an integrated circuit structure further includes the interlayer dielectric layer extending through the silicon layer, the buried oxide layer and the interface layer. The radio frequency area of an integrated circuit structure includes an implant region formed below the interlayer dielectric layer in the deep trench and a polysilicon layer formed below the implant region.

Abstract: There are provided a chip resistor and a method of manufacturing the same. The chip resistor includes a ceramic substrate; an adhesion portion formed on a surface of the ceramic substrate; and a resistor formed on the adhesion portion, wherein the adhesion portion includes at least one of copper (Cu), nickel (Ni), and copper-nickel (Cu—Ni).

Abstract: An embodiment of an apparatus for providing a variable resistance may be configured to provide a resistance value according to a binary-coded decimal scheme. The apparatus may be referred to herein as a BCD variable resistance apparatus. The BCD variable resistance apparatus may include a plurality of resistive elements and a plurality of switches. In an embodiment, the resistive elements may be coupled with respective switches in a binary-coded decimal scheme.

Abstract: The invention relates to an electronic component (1), in particular a low-ohm current-sense resistor, comprising at least one plate-shaped section (2, 3) and at least one terminal (7, 8) to electrically contact the plate-shaped section (2, 3). According to the invention, the terminals (7, 8) for measuring the voltage drop created by the current flow are formed by means of stamping and thread-shaping in the plate-shaped sections (2, 3).

Abstract: Provided may be a semiconductor resistance element including resistance patterns disposed on an insulating substrate. The substrate may have first and second planar surfaces disposed in a first direction, third and fourth planar surfaces at least between the first and second planar surfaces in a second direction and fifth and sixth planar surfaces at least between the first and second planar surfaces in a third direction. The semiconductor resistance element may include a first resistance pattern configured to cover a selected one of the first and second planar surfaces and a second resistance pattern on at least one of the third through sixth planar surfaces.

Abstract: Provided may be a semiconductor resistance element including resistance patterns disposed on an insulating substrate. The substrate may have first and second planer surfaces disposed in a first direction, third and fourth planar surfaces at least between the first and second planar surfaces in a second direction and fifth and sixth planar surfaces at least between the first and second planar surfaces in a third direction. The semiconductor resistance element may include a first resistance pattern configured to cover a selected one of the first and second planar surfaces and a second resistance pattern on at least one of the third through sixth planar surfaces.

Abstract: A design structure including a pair of substantially parallel resistor material lengths separated by a first dielectric are disclosed. The resistor material lengths have a sub-lithographic dimension and may be spacer shaped.

Abstract: A touch panel includes a first transparent electrode substrate, a second transparent electrode substrate, a first bonding layer, a first transparent substrate, and a second bonding layer. The first transparent electrode substrate includes a first wiring pattern, a first surface, a second surface, and a first path. The second transparent electrode substrate includes a second wiring pattern, a third surface, a fourth surface, and a second path. The second path causes the third surface and the fourth surface to communicate with each other. The first bonding layer includes a first peripheral area, an opening area, and a third path. The first bonding layer bonds the first transparent electrode substrate and the second transparent electrode substrate to each other. The first transparent substrate is opposed to the second surface. The second bonding layer includes a first opening portion.

Abstract: To provide a glazed metal film resistor device excellent in TCR characteristics with using an economical base body containing glass by reducing affection to TCR characteristics caused by glass contained in the base body. The resistor device comprises base body 11 containing glass, first protective film 12, which does not contain glass, formed on a surface of base body 11, and thick film resistor 13 formed on first protective film 12. By forming first protective film 12 on a surface of base body 11 containing glass and insulating base body 11 containing glass against thick film resistor 13 of ruthenium oxide as primary component, affection of glass contained in base body 11 to thick film resistor 13 of ruthenium oxide can be suppressed, and change of TCR value from original value of thick film resistor itself can be suppressed.

Abstract: Sensor mount assemblies and sensor assemblies are provided. In an embodiment, by way of example only, a sensor mount assembly includes a busbar, a main body, a backing surface, and a first finger. The busbar has a first end and a second end. The main body is overmolded onto the busbar. The backing surface extends radially outwardly relative to the main body. The first finger extends axially from the backing surface, and the first finger has a first end, a second end, and a tooth. The first end of the first finger is disposed on the backing surface, and the tooth is formed on the second end of the first finger.

Abstract: A resistor assembly for use at microwave frequencies, has a substrate with first and second contacts or metalizations at either end of the substrate. A third contact or metallization is provided on one side of the substrate generally in the middle thereof. First and second resistors, as thin film resistors, are provided on the substrate extending between the first and second contacts and the third, central contact. A third resistor is provided on the other side of the substrate, connecting the first and second contacts, so as to form a delta configuration of three resistors. This then provides a resistor configuration that can be used to implement a three port Wilkinson splitter or combiner.

Abstract: Circuits, methods, and apparatus that provide highly accurate DCPs. One example provides a DCP that includes a resistor string having taps that may be selected by a corresponding number of switches under the control of a digital word. To compensate for parasitic switch resistances and for variations in the values of the resistor sting caused by processing tolerances, a voltage-controlled resistor (VCR) is placed in parallel with the resistor string and switches. A control voltage generated using a control loop adjusts the parallel VCR such that the resistance seen across the DCP is the desired value. The control loop compares a reference resistor to loop components that are scaled to the resistor string, switches, and VCR. The reference resistor may be an external resistor or an internal resistor. If the resistor is internal, it may be trimmed, for example with lasers or fuses.

Abstract: The body pressure distribution sensor sheet includes a first sheet, a second sheet, and a plurality of pressure-sensitive regions interposing between the first sheet and the second sheet. The pressure-sensitive regions are arranged in two directions, i.e., a lengthwise direction and a transverse direction to form a matrix. A first opening, a second opening, and a cut line are formed in an area between a pair of pressure-sensitive regions and adjacent to each other in a first oblique direction. The shape of the first opening is defined by a plurality of borders including a border and a border. The border extends from one end of the cut line in the transverse direction, and the border extends from the one end of the cut line in the lengthwise direction. The shape of the second opening is defined by a plurality of borders including a border and a border.

Abstract: A parallel resistor circuit that can reduce an error of a resistance value, an on-die termination having the same, and a semiconductor device having the on-die termination device. The semiconductor memory device includes a calibration circuit configured to pull up or pull down a predetermined node and compare a voltage of the predetermined node with a reference voltage to generate calibration codes, by using parallel resistor units that are turned on or off in response to the calibration codes. An output driver is configured to terminate a data output node to a pull-up or pull-down level to output data, by using the parallel resistor units. At least one of the parallel resistor units having at least two resistivities includes resistors with different resistivities connected to each other in parallel.

Abstract: An intrinsically safe energy limited circuit for space-restricted applications includes a fuse and resistor in series with a protected circuit or component wherein the fuse dissipates most of the power when the protected circuit or component is short circuited.

Abstract: The present invention relates to an electrical resistance element of the molybdenum silicide type that includes two terminals (1, 2) for the supply of electric current and at least one leg (3) which extends between the terminals and which includes a glow zone. The invention is characterized in that the glow zone has different diameters along different sections (6-11, 14-17) of the leg (3; 4, 5).

Abstract: When the entire amount of conductive metal mixed powder made of copper, manganese, and germanium is 100 parts by weight, the metal mixed powder is formed by mixing 4.0 to 13.0 parts manganese by weight, 0.2 to 1.4 parts germanium by weight, and 85.6 to 95.8 parts copper by weight, and 0 to 10 parts glass powder by weight and 0 to 10 parts copper-oxide powder by weight are mixed relative to the entire amount (100 parts by weight) of these metal components. The obtained resistive paste is then baked, and the resistive composition having the low resistance value and low TCR may be obtained. In addition, a resistor is made by forming the resistive element upon a substrate.

Abstract: Nanostructured non-stoichiometric non-equilibrium materials are disclosed. Novel electromagnetic materials and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel electrical devices and products.

Abstract: The present invention provides nano-scale devices, including electronic circuits, using DNA molecules as a support structure. DNA binding proteins are used to mask regions of the DNA as a material, such as a metal is coated onto the DNA. Included in the invention are DNA based transistors, capacitors, inductors and diodes. The present invention also provides methods of making integrated circuits using DNA molecules as a support structure. Methods are also included for making DNA based transistors, capacitors, inductors and diodes.

Abstract: A 1-bit D/A converter with a zero detect soft mute function is provided in such a manner that a counter is operated by detecting that a multibit digital signal is all zero for a constant period of time, and a feedback resistor of an op-amp in the analog low-pass filter is decreased stepwise based on a discrete value of the counter so as to be finally short-circuited so that a D/A convert output is fixed at a reference potential. The feedback resistor is composed of a plurality of resistors of first and second groups and first to third analog switches. A first digital control variable resistor is constituted by connecting the resistors of the first group in series and connecting a first analog switch selectively turned on/off in accordance with an output signal other than an LSB of the counter to respective nodes.

Abstract: An operation shaft receiving-type electric component capable of reducing the number of parts required therefor and preventing generation of noise. An electric component body which includes an electric component unit varied in electric properties due to a variation in rotation angle of the operation shaft is arranged between an operation section of an operation shaft and a mechanism unit. A push-type lock and release mechanism is constituted by a guide member held stationary, both a slider member and a rotary slider each rotatably fitted on the operation shaft, a spring holder and a spring member. The guide member is provided with a plurality of primary guide grooves and secondary guide grooves, in which projections of the slide member are fitted, respectively. The rotary slider is provided with a plurality of projections, which are fitted in the main guide grooves, respectively.

Abstract: An interrupt apparatus for remotely controlling a potentiometer is comprised of an encoder for generating a pair of quadrature output signals whenever the encoder becomes rotated. The pair of signals are sent to a pair of D flip-flops for detecting a rising or falling edge of one of the signals. The pair of D flip-flops sends an interrupt signal to a microprocessor when the signals indicate that the encoder has been rotated. Either one of a pair of AND gates will output a high signal to set a third D flip-flop when motion is in the counter-clockwise direction. After being interrupted, the microprocessor reads the direction signal from the third flip-flop, resets the three flip-flops so that subsequent motion may be detected, updates the value of resistance stored in memory, and outputs the magnitude of the resistance in digital form.

Abstract: A substrate structure of a monolithic gas sensor is disclosed, wherein the substrate structure is formed as a thermal resistant and insulating suspended thin plate configuration on a single crystal silicon substrate. The thin plate has formed thereon a heating resistor and coated with tin-oxide-base reducing gas-sensitive material. The thermal resistant thin plate formed on the silicon substrate comprises a native silicon oxide layer, a silicon-rich silicon nitride layer deposited on the native silicon oxide layer, and a top silicon oxide layer formed by thermal oxidation of a surface layer of the deposited silicon-rich silicon nitride layer. An oxide-nitride-oxide sandwiched composited configuration is thus formed that can relieve mechanical stresses internal to the thin plate.

Abstract: A pseudo-random switched resistor for emulating a relatively high input impedance. The switched resistor comprises a relatively low value resistor, a semiconductor switch coupled to the resistor, and a pseudo-random pulse generator coupled to the switch for controlling the on time of the switch to emulate the relatively high input impedance. The random pulse generator comprises a plurality of cascaded circuits that are coupled to a flip flop. The plurality of cascaded circuits each comprise a shift register for receiving clock signals and for generating a sequence of (2.sup.N -1) pseudo-random numbers and a terminal count pulse at the end of every sequence, an N-bit binary counter for receiving the terminal count pulse which clocks it, and an equivalence circuit for comparing the outputs of the shift register and the binary counter and for generating an output signal when there is a match.

Abstract: A Neuro device is a representation of a nerve cell constituting human brains, eyes and the like, that is, a neuron by an electronic circuit. A circuit of the Neuro device according to the present invention comprises n (n : natural number) input terminals 4, n variable resistors 8 (the resistance values of the n variable resistors 8 are respectively set to R1, R2,..., Rn) respectively connected to the input terminals 4, and an arithmetic circuit 100 to which signals from the variable resistors 8 are together applied, and an output terminal 5 to which a signal from the arithmetic circuit 100 is outputted. The variable resistor 8 is so constructed that a chalcogenide semiconductor is interposed between a pair of electrodes. The chalcogenide semiconductor can be reversibly transferred to a high resistive amorphous state and a low resistive crystallized state by applying a predetermined write voltage.

Abstract: A voltage-dividing resistor plate is stored in a case, and a resin layer for insulation is formed on the voltage-dividing resistor plate. On the resin layer, for example, a coupling capacitor and a smoothing capacitor are affixed. And it is so arranged that the potential of the electrode of the coupling capacitor on the side of the voltage-dividing resistor plate is equal to the potential of the voltage-dividing resistor plate where the coupling capacitor is affixed. It is also so arranged that the potential of the electrode of the smoothing capacitor on the side of the voltage-dividing resistor plate is equal to the potential of the voltage-dividing resistor plate where the smoothing capacitor is affixed.

Abstract: An electronically controllable resistor (ECR) which functions as a fixed or variable resistor over a wide range of operating conditions. The value of the resistance may be altered in a highly linear fashion by altering a digital input thereto. The ECR utilizes an array of transmission gates, preferably having a uniform inherent resistance and preferably fabricated using CMOS technology which are grouped in commonly controlled groups. Each group preferably contains a number of transmission gates which relates to the numbers of transmission gates in other groups in a binary fashion. The source of digital control signals is preferably provided by a digital memory device which can be integrated with the transmission gate array. An operational amplifier can also be provided on the chip to form a complete neural processing element for inclusion in large neural networks.

Abstract: An improved sulfider is provided for receiving high temperature catalysts from a hydrocarbon cracking operation and subjecting the catalyst to a sulfur-containing gas. The treating unit includes an outer metal housing and first refractory layer within the metal housing for minimizing heat loss from the treatment unit. A second refractory layer is provided within the first refractory layer and defines an interior chamber within the treatment unit, and a plurality of heating units are spaced circumferentially along the interface of the first and second refractory layers. The heating units substantially minimize the temperature differential across the second refractory layer and thereby minimize the heat loss from the high temperature catalyst within the chamber. The catalyst is continually passed into and out from the chamber, and the sulfur-containing gas is injected into a lower portion of the chamber to pass through the high temperature bed formed by the catalyst.

Abstract: A simple transistor circuit which acts as a linear resistor for small applied voltages, but becomes extremely resistive for large applied voltages is disclosed. Two-dimensional resistive grids comprising these resistive fuses can be employed to smooth and segment discretized images in machine vision. Existing and previously proposed VLSI implementations of resistive fuses have required at least thirty-three transistors. The resistive fuse circuit of the present invention uses only four transistors in its simplest embodiment, thus making it possible to design much denser vision arrays.

Abstract: A precise digitally-controlled variable attenuation circuit for adjusting e attenuation of a signal in an external circuit includes a signal magnitude detector, a resistance adjustment control, and a resistance divider network. The signal magnitude detector has lower and upper threshold limits representing a desired range of attenuation and is operable to receive and compare a control signal with the lower and upper threshold limits, and, in response thereto, produce either a first signal if the control signal is less than the lower threshold limit or a second signal if the control signal is greater than the upper threshold limit. The adjustment control is capable of receiving the first and second signals and is operable to produce either a digital count-down signal in response to the first signal or a digital count-up signal in response to the second signal. The resistance divider network has a fixed resistance and a digitally-adjustable device with a variable resistance.

Abstract: A surface-mountable composite electronic part comprising a capacitor element which includes a dielectric ceramic member and a film resistor combined therewith for forming an RC circuit. A plurality of external terminals are formed on both end surfaces of the capacitor element for extracting capacitance, while a plurality of wiring patterns are formed on a first major surface of the capacitor element to be connected with the external terminals. The film resistor is formed on the first major surface of the capacitor element on a protective film made of a glass material, and connects a pair of the wiring patterns with each other. When the film resistor is trimmed with a laser beam, the protective film prevents the dielectric ceramic member forming the capacitor element from being harmed by the laser beam.

Abstract: A programmable resistor 10 is provided having a resistive element 12. Resistive element 12 includes a substrate 26 formed by a layer of semiconductor of a first conductivity-type. A current path 32 is formed in substrate 26 by a layer of semiconductor of a second conductivity-type. An interface 36 having interfacial traps is formed between current path 32 and substrate 26. A backgate 24 is formed adjacent substrate 26. A first switch 14 selectively couples backgate 24 to a first voltage while a second switch 16 selectively couples backgate 24 to a second voltage.

Abstract: A non-contacting potentiometer includes a resistor and a movable probe which capacitively couples AC signals applied to the resistor to an output terminal. A closed loop control circuit is coupled to the resistor and the probe to compensate for variations in gap spacing between the probe and resistor.

Abstract: A compact and inexpensive variable resistor circuit has a value of resistance that can be set by a data signal. The variable resistor includes a number of variable individual resistances connected in series, and an electronic switch connected in parallel across each individual resistance. The values of the individual resistances are chosen to include a basic resistance value and a compensating resistance value, which corresponds to the impedance of the associated electronic switch in its closed state. The basic value is chosen from the progression 2.sup.0, 2.sup.1, 2.sup.2, 2.sup.3, and so on, so that the resistance of the variable resistor corresponds to the binary value of data applied to control the electronic switches. Other aspects of the invention include input and control circuitry which is designed to minimize its size and allow it to be packaged on an integrated circuit.

Abstract: Resistors have successfully replaced corona point discharge devices in the control of high voltage gradients, such as those experienced in electrostatic accelerators. An improved resistor for such applications which has a single elongate resistive element, one end of which is mounted on a metal clamp which is adapted to be clamped to the edge of a metal disc of the type used in a supporting column or tube of an electrostatic accelerator. The other (free) end of the resistor is unsupported, but carries a tubular capacitive electrode, which provides, with a cylindrical metal housing which is mounted on the clamp coaxially with the resistive element, a spark gap. The free end of the resistor also supports a light-weight connector, into which or on to which a plug can be inserted or affixed to make an external electrical connection to the resistive element.

Abstract: A material which exhibits different electrical resistivity in mutually perpendicular directions is formed by providing a base member of one metal and covering a surface of the base member with a second metal of a different composition. Thereafter, multiple passes are made with a high energy beam over the surface of the second metal to form a plurality of alloyed zones in the base metal with the resistivity of the alloyed zones being different than that of the adjacent base metal.A rotor for a dynamoelectric machine fabricated by such methods imparts a preferred direction to current flow to thereby eliminate large undesirable eddy currents and by tailoring the pattern of the higher resistivity zones, a machine may be provided which produces a self-compensating flux to minimize undesirable flux leakage common in such machines.

Abstract: A printed circuit or printed wire board has a resistor network thereon, wired through conductors that are arranged so that individual circuit paths for different resistor combinations pass onto one of a plurality of peripheral tabs on the printed circuit board. The tabs are joined to the main portion of the circuit board through a frangible connection which permits breaking off the tabs. The main circuit into which the board is to be connected is tested to determine the needed circuit characteristics, and all but one of the tabs on the board are removed to provide the required circuit connections for matching the printed wire board circuit to the main circuit. The breakaway tabs permit selecting a particular circuit impedance so that the board is matched to the main circuit in which it is connected. The board is primarily used for compensation of a communications network where the loop loss of a telephone system is set to the right value.

Abstract: A connecting element is provided comprising an electrical conductor and a conductive path of arranged carbon along the connecting element's entire connecting length. The conductive path can either be formed as an integral part of the electrical conductor or as a separate element which works in cooperation with the electrical conductor. The carbon is arranged in that the nuclear magnetic resonance of substantially all of the carbon atoms of the conductive path has a determined orientation. The carbon is arranged by way of the connecting element being passed through a magnetic dc field which orients the nuclear magnetic resonance of the carbon atoms with relation to that field.

Abstract: A current limiter according to the invention has two resistors, the first one consisting of a thin layer of a material which may become superconducting and the second one is a resistance layer applied on first resistor, the latter resistor layer being dimensioned such that its resistance becomes considerably lower than the resistance of the superconducting layer when it is not superconducting, however with a resistance of such a magnitude that, in the current circuit in question, it limits the current to a permissible value. For mechanical support of the resistors, an insulator is included in the current limiter, and the superconducting material is applied on insulator. The resistors and the insulator are arranged immersed into a cryotank.

Abstract: A material which exhibits different electrical resistivity in mutually perpendicular directions is formed by providing a base member of one metal and covering a surface of the base member with a second metal of a different composition. Thereafter, multiple passes are made with a high energy beam over the surface of the second metal to form a plurality of alloyed zones in the base metal with the resistivity of the alloyed zones being different than that of the adjacent base metal.A rotor for a dynamoelectric machine fabricated by such methods imparts a preferred direction to current flow to thereby eliminate large undesirable eddy currents and by tailoring the pattern of the higher resistivity zones, a machine may be provided which produces a self-compensating flux to minimize undesirable flux leakage common in such machines.

Abstract: A thick film resistor (TFR) is provided that is capable of being compensated for impedance variations related to the TFR laser-trimming process. According to the invention, a thick film capacitor (TFC) metallization is provided in parallel with the thick film to compensate the RF impedance. A method is also provided for calculating the exact length of the TFC metallization necessary to compensate the RF impedance. Once this length (L) is known, the TFC metallization can be laser-trimmed to obtain the desired length.

Abstract: A variable resistor having a multi-layer resistive/conductive element is provided. The resistor has three electrodes, a resistive element connecting two of the electrodes and a sliding contact between the resistive element and the third electrode. The base of the resistor is provided with test areas. Each of the test areas contains a strip of the material used to form an individual layer in the multi-layer element. The test areas provide a convenient means for measuring the thickness of the individual layers in the multi-layer element without having to destroy the resistor.

Abstract: A static memory cell including a pair of field-effect transistors, characterized by the provision of highly dielectric layers in combination with the field-effect transistors, wherein each of the highly dielectric layers is located directly on a polysilicon gate electrode layer formed on a silicon dioxide insulating layer bridging the channel region of each of the field-effect transistors. The gate electrode layer of one field-effect transistor is held in direct contact with the drain region of the other field-effect transistor and the two highly dielectric layers are covered with a polysilicon conductive layer electrically connected to a supply voltage source so that each field-effect transistor has its drain region connected to the supply voltage source through one dielectric layer and its gate electrode layer connected to the voltage source through the other dielectric layer.

Abstract: Amorphous Nickel-base alloys for electrical resistors, which contain, by atomic %, 81-x% Ni, x% Cr, 6% B and 13% Si (z=0.about.25), or 70% Ni, 11% Cr, 19-y% B and y% Si (y=0.about.19 except 13), or 100-z% of 0.864 Ni and 0.136 Cr and z% of 0.316 B and 0.684 Si (x=15.about.25 except 19), and have a relatively high electrical resistivity and a small temperature coefficient of resistivity, are disclosed. Their resistance values can be adjusted by heat treatment and the thermal stability of them after heat treatment is very good in the conventional operating temperature range of electrical components.

Abstract: An electronic composite component is composed of a resistor element formed by a resistor film and a functional element such as a capacitor element which is electrically connected in parallel with the resistor element. The functional element has a body and a pair of terminal electrodes formed on respective end surfaces of the body. A serially extending electric insulation layer is formed on the surface of the body to partially cover the pair of terminal electrodes. This electric insulation layer is formed to selectively determine the distance between exposed regions of the terminal electrodes.