Abstract: A CCD image sensing device has vertical shift registers (22), a horizontal shift register (3A), a horizontal transfer gate (4), a horizontal shift register (3B), a smear gate (6), a smear drain region (7) and a channel stop region (8) arranged in that order on an n-type substrate (N-Sub). A p-well region underlying the vertical shift registers (22), the horizontal shift register (3A), the horizontal transfer gate (4), the horizontal shift register (3B) the smear gate (6), the smear drain region (7) and the channel stop region (8) is doped in a high impurity concentration to stabilize the potential of the p-well region at a potential substantially equal to that of the channel stop region (8), i.e., ground potential (GND). Consequently, no hole storage region is formed in the p-well and hence the deterioration of the signal transfer performance can be prevented. Since no hole-depletion region is created, no dark current due to avalanche is produced.

Abstract: A charge coupled device imager has an imaging section comprising a plurality of photoelectric converting sections and a plurality of horizontal charge transfer sections arranged in a matrix configuration divided into two sections. Each of the photoelectric converting sections is surrounded with a channel stop region for isolating each other and a readout gate region. Signal charges in the imaging section are transferred by the horizontal charge transfer sections in opposite horizontal directions according to the raster scanning direction of television signal, so that the horizontal charge transfer sections in an unit cell are not elongated in the vertical direction and transfer frequency is lowered. As a result of the horizontal transfer in the imaging section, the photoelectric converting sections can be arrayed with high density in horizontal direction to achieve high horizontal resolution.

Abstract: A shift register of a CCD line image sensor is divided into two from the center thereof so as to transfer the signal electrical charge for output portions placed on both ends of the sensor, so that the line image sensor has a higher data rate, and reduced optical smearing. Furthermore, when a color line image sensor has been made using such line image sensors, the clearance of the sensor may be made smaller, and the amount of the correction smear for positioning alignment may be reduced.

Abstract: A solid state image sensing device comprising first and second horizontal shift registers of two-phase drive system, a smear drain region disposed in an opposing relation to a first storage section of the second horizontal shift register to which the first phase drive pulse of the second horizontal shift register is applied and a channel stop region disposed in an opposing relation to a second storage section of the second horizontal shift register to which the second phase drive pulse is applied, wherein a smear component is drained to the smear drain region, and a hole component is drained to the channel stop region for thereby reducing a dark current of the second horizontal shift register to about that of the first horizontal shift register. Therefore, a dark current in the horizontal shift register of the solid state image sensing device can be reduced.