Abstract: An image capture apparatus includes an image sensor, a determination unit which determines one image capturing mode, a driving unit which drives the image sensor by different driving methods in the respective image capturing modes, and a control unit which controls the operation of the driving unit. The image sensor includes a plurality of two-dimensionally arrayed pixels, a predetermined number of vertical output lines arranged for each array of pixels, and a holding memory which holds pixel signals from pixels on rows. The control unit drives the image sensor in the first power save mode when a horizontal transfer period is not less than twice a vertical transfer period, and drives the image sensor in the second power save mode when the vertical transfer period is not less than twice the horizontal transfer period.

Abstract: Provided is a display apparatus including an image processing module and a display main body, wherein the image processing module includes: an image signal processor processing an image signal; a module terminal transmitting the processed image signal in a wired manner; and a module wireless communication unit transmitting wirelessly the processed image signal, and wherein the display main body includes: a main body terminal receiving the image signal from the module terminal which is detachably connected to the main body terminal; a main body wireless communication unit receiving the image signal from the module wireless communication unit; and a display unit displaying an image corresponding to the image signal; and a controller controlling the image signal to be transmitted selectively from the module terminal to the main body terminal or from the module wireless communication unit to the main body wireless communication unit.

Abstract: An electronic device may have an image sensor for capturing digital image data of a scene. The image sensor may have an array of image sensor pixels. The image sensor pixels may have photosensitive elements for capturing image data signals. The image data signal from each photosensitive element may be conveyed to an output line associated with a column of the array using a source-follower transistor. The source-follower transistors may be provided with a current bias using current source coupled to each output line. The current source may include a configurable current source transistor that has multiple branches that can be selectively switched into use to adjust transconductance and drain saturation voltage characteristics for the current source. Gate structures in the configurable current source transistor may be supplied with a reference voltage from an adjustable voltage reference circuit.

Abstract: An image sensor is provided. A first storage unit stores an image information value corresponding to an image signal provided from a pixel, and a second storage unit stores a reset information value corresponding to a reset signal provided from the pixel. A differential signal comparison unit receives image information value and the reset information value, compares the two values, and outputs a difference value therebetween. A switch unit is switched so that the two input values are transferred in a crossed manner in a first operation period and a second operation period. A digital value providing unit combines a first digital value, which corresponds to an output timing of a first comparison signal in the first operation period, and a second digital value, which corresponds to an output timing of a second comparison signal in the second operation period, and output a digital value corresponding to image information received at the pixel.

Abstract: A solid state imaging device including: a pixel portion having a plurality of pixels arrayed two-dimensionally and including an effective pixel portion and a dummy pixel portion; a timing generator for generating address information for reading signals of pixels of the pixel portion and timing signals for reading; a column decoder; a column selection circuit for generating transfer signals and reset signals used for control for reading signals of pixels in the column portions of the pixel portion by the plurality of line selection signals output from the column decoder based on the timing signals and selecting column portions of pixels in an effective portion and a dummy portion of the pixel portion; and a transfer circuit for reading signals of corresponding pixels based on the transfer signals and reset signals output from the column selection circuit, then transferring signals of read pixels by the row signal lines.

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device in which micro pads are formed on the wiring layer side and a signal processing chip having micro pads formed on the wiring layer at the positions corresponding to the micro pads of the MOS solid-state image pickup device are connected by micro bumps. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract: A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.

Abstract: Provided is a solid-state imaging apparatus comprising signal lines to each of which a signal is outputted from each of pixels, a first holding capacitor for holding the signal outputted from each of the signal lines, first CMOS switches arranged between the signal lines and the first holding lines, each of the first CMOS switches including a first NMOS transistor and a first PMOS transistor, a first control line commonly connected to the gates of the first NMOS transistors of the first CMOS switches, and a second control line commonly connected to the gates of the first PMOS transistors of the first CMOS switches, and signals of different timings are supplied to the first control line and the second control line such that a timing of turning off the first NMOS transistor is shifted from a timing of turning off the first PMOS transistor.

Abstract: In a solid-state image sensor, first and second column readout lines are provided to each pixel column, pixel rows are divided into pixel rows of first and second groups, the first group is divided into subgroups each formed from pixels of an identical color, the second group is divided into subgroups each formed from pixels of an identical color, signals from pixels of the pixel rows of the first group are output to the first column readout lines, and signals from pixels of the pixel rows of the second group are output to the second column readout lines. Pixels of an identical subgroup in an identical pixel column share a conversion region and an amplification element, a given conversion region and another conversion region included in a pixel column identical to a pixel column of the given conversion region do not intersect with each other.

Abstract: A fast-settling line driver circuit capable of high-speed operation. The line driver is particularly well-suited for operation in a high-resolution imaging system. The line driver circuit comprises a signal amplifier that is configured in a negative feedback loop and connected to a bus line through a switch network. The switch network is disposed inside the feedback loop while the line driver is transmitting a signal onto the bus line. This configuration reduces the settling time of the line driver by substantially eliminating the effect of the switch resistance on the RC time constant. The line driver also comprises offset cancellation and presettle circuits that improve the integrity of the output signal and reduce the power consumption of the system.

Abstract: An imaging apparatus includes a sensor array, readout apparatus, and control circuit. The readout apparatus includes first LPFs arranged in correspondence with signal lines, an analog multiplexer, and a second LPF. The cut-off frequencies of the first and second LPFs can be switched on two stages, and the control circuit switches the cut-off frequencies of the first and second LPFs in accordance with the imaging mode.

Abstract: The present invention provides an image capturing apparatus, which comprises a plurality of photoelectric converter-containing pixels that are positioned horizontally and vertically and a gain circuit, has a gain controller that can control the gain of the gain circuit in N stages (where N is an integer equal to or greater than 2). The gain circuit outputs each of a plurality of signals given by the product of the output signal from one of the plurality of pixels and the gain in each stage of the N stages.

Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

Abstract: Of the output signals of a solid state image sensor 101, only the signals in a vertical OB line period are selected by an OB line selector 105. A level adjuster 107 adjusts the level of a past vertical OB line signal read out from the line memory 106 during a first vertical OB line period of a frame where the amplification factor of an amplifier 102 has changed, and outputs the same. A subtractor 109 subtracts the signal whose level has been adjusted from a current vertical OB line signal. A multiplier 111 multiplies, via a selector B 111, the signal after subtraction by a cyclic coefficient K1H for the first vertical OB line period of the frame where the amplification factor has changed. A subtractor 112 subtracts the multiplication result from the current vertical OB line signal, and rewrites the subtraction result to the line memory 106.

Abstract: An image sensor for electronic cameras has an image field having at least one image field block which includes a plurality of light sensitive pixels arranged in rows and columns for generating exposure dependent pixel signals, wherein the pixel signals of the pixels of the respective column of the respective image field block can be read out via one or more respective column lines extending parallel to one another. The image sensor has at least one first row of column amplifiers and at least one second row of column amplifiers for the respective image field block. The image sensor is adapted to read out the pixel signals of the pixels of the respective column of the respective image field block of an image or of two mutually following images partly via the at least one first row and partly via the at least one second row of column amplifiers (25).

Abstract: A solid-state imaging device 1 includes photodiodes PD1 to PDN, charge-voltage converting circuits 101 to 10N, pre-holding circuits 201 to 20N, a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10n inputs charges generated at the photodiode PDn and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20n holds the output voltage value from the charge-voltage converting circuit 10n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 201 to 20N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.

Abstract: An AD converting unit compares an output signal from an amplifier circuit after reset of a pixel with a reference signal of time-variable, outputs a first digital value, when the output signal from the amplifier circuit in a non-reset state of the pixel is larger than a threshold, sets a gain of the amplifier circuit to a first gain, when the output signal is smaller than the threshold, sets the gain of the amplifier circuit to a second gain larger than the first gain, further after the gain of the amplifier circuit was set to the first or second gain, compares the output signal from the amplifier circuit in the non-reset state of the pixel with the reference signal of time-variable, and outputs a second digital value. When resolutions of the first and second digital values differ, a correcting unit corrects a difference between the resolutions.

Abstract: A method and a device having amplification and noise reduction capabilities, the device may include (a) an amplifier; (b) an input circuit that includes multiple sampling circuits, (c) an error capacitor that is arranged to be charged by the amplifier, during a noise integration period, to an error voltage that is indicative of noise generated as a result of a sampling of first and second signals; and (d) a feedback circuit that is arranged to provide to the second input of the amplifier and in proximity to a beginning of second phase of operation, a feedback signal that represents the error voltage and thereby at least partially compensate for the noise.

Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: An object of the present invention is to provide an imaging system capable of improving S/N ratio and increasing dynamic range and a method of driving the imaging system suited to the improvement and increase. An imaging system includes: a solid-state imaging device having a plurality of pixels arranged in a matrix, column amplifiers each corresponding to each of columns of the pixels and an output portion for outputting an image signal based on an amplification by the column amplifier; and a signal processing portion receiving the image signal, wherein the column amplifier amplifies a signal output from the pixel by a gain q larger than 1, and the signal processing portion multiplies, by a factor less than 1, the image signal based on the signal amplified by the gain q.

Abstract: In order to suppress a variation of a signal held by each signal holding unit, a solid-state imaging apparatus of the present invention is characterized in that, when a clamp operation of a pixel output signal is performed in the signal holding unit, a time changing rate of an amplitude of a drive pulse supplied to the selecting unit for turning from a non-conducting state to a conducting state is not larger than a time changing rate of the amplitude of the drive pulse supplied to the selecting unit for turning from the conducting state to the non-conducting state.

Abstract: In a solid-state imaging device, an amplification transistor amplifies a signal generated by a photoelectric conversion unit and outputs the amplified signal. An analog memory accumulates the amplified signal output from the amplification transistor. A select transistor electrically connects the analog memory to a vertical signal line and selects any one of a first state in which the amplified signal accumulated in the analog memory is output to the vertical signal line and a second state in which the analog memory is electrically disconnected from the vertical signal line. A differential amplification circuit includes a first input terminal connected to a reference voltage and a second input terminal connected to the vertical signal line.

Abstract: A solid-state imaging device 1 includes N pixel sections 101 to 10N, transimpedance circuits 20a and 20b, integrating circuits 30a and 30b, and a difference arithmetic circuit 40. Each pixel section 10n includes a photoelectric converting circuit including a photodiode, and a first holding circuit and a second holding circuit which hold an output voltage of the photoelectric converting circuit. A voltage held by the first holding circuit of each pixel section 10n is input into the difference arithmetic circuit 40 through a common wire 50a, the transimpedance circuit 20a, and the integrating circuit 30a. A voltage held by the second holding circuit of each pixel section 10n is input into the difference arithmetic circuit 40 through a common wire 50b, the transimpedance circuit 20b, and the integrating circuit 30b. A voltage corresponding to a difference between the voltages output from the integrating circuits 30a and 30b, respectively, is output from the difference arithmetic circuit 40.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: An image pickup apparatus that makes it possible to achieve both high picture quality and a wide dynamic range is provided. Each pixel unit included in the image pickup apparatus includes: four photodiodes; four transfer transistors; a charge storage portion (four floating diffusions) for storing electric charges generated at the photodiodes; an amplification transistor; a select transistor; and a reset transistor. The image pickup apparatus further includes multiple coupling transistors. Each coupling transistor couples together the charge storage portions of two pixel units of the pixel units. A scanning circuit switches on or off the coupling transistors according to read mode.

Abstract: A horizontal scanning period is divided into n parts (n is a natural number), so that horizontal scanning can be performed (n×y) times in one frame period. That is, n signals can be outputted from each pixel, and storage times of the n signals are different from one another. Then, since a signal suited to the intensity of light irradiated to each pixel can be selected, information of an object can be accurately read.

Abstract: A solid-state imaging apparatus according to the present invention is characterized in that a reset gate voltage VresH to be applied to a gate of a reset MOS transistor is lower than a power supply voltage SVDD of a power supply to which drains of an amplifying MOS transistor and the reset MOS transistor are connected.

Abstract: A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors.

Abstract: A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.

Abstract: A comparator includes a first amplifier, a second amplifier, and a level holding part. The first amplifier includes differential-pair transistors and outputs a signal of a level corresponding to a comparison result from a first output node. The differential-pair transistors compare a reference voltage with a potential of an input signal. The second amplifier gain up the signal output from the first output node of the first amplifier and outputs the signal from a second output node. The level holding part holds a level of the second output node at a predetermined level. The second amplifier includes a transistor for amplification and a transistor for a current source. The level holding part holds the level of the second output node of the second amplifier such that the transistor for the current source does not fall into a level at which a saturated operation condition is not satisfied.

Abstract: A comparator includes a first amplifier and a level holding part. The first amplifier includes differential-pair transistors and outputs a signal of a level corresponding to a comparison result from a first output node. The differential-pair transistors serve as a comparison part that receives a reference voltage, a signal level of which changes with a slope, at a gate of one of the differential-pair transistors, receives an input signal at a gate of the other of the differential-pair transistors, and compares the reference voltage with a potential of the input signal. The level holding part holds a level of the first output node such that the other transistor having an output part thereof connected to the first output node out of the differential-pair transistors of the first amplifier does not fall into a level at which a saturated operation condition is not satisfied.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit which is arranged in a semiconductor substrate, a charge holding portion which is arranged in the semiconductor substrate and temporarily holds a charge generated by the photoelectric conversion unit, a first transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge generated by the photoelectric conversion unit to the charge holding portion, a charge-voltage converter which is arranged in the semiconductor substrate and converts a charge into a voltage, and a second transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge held by the charge holding portion to the charge-voltage converter, and the first transfer electrode is arranged to cover the charge holding portion, and not to overlap the second transfer electrode when viewed from a direction perpendicular to the upper surface of the semiconductor substrate.

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract: An image processing apparatus includes an amplifying unit for, during a main scanning line period, amplifying an analog image signal input from a photoelectric conversion element and outputting the signal; an A/D converting unit for analog/digital-converting the signal to digital image data and outputting the data; and a digital offset correcting unit for performing a low-pass filter calculation based on the data to obtain an average value, calculating, based on the average value, a digital correction value used for correcting the data to obtain a desired black offset level, and performing correction on the data using the value. The digital offset correcting unit compares the value to a threshold, reduces the value to be equal to or less than the threshold if the value is equal to or greater than the threshold and updates the value to the reduced value, and performs the low-pass filter calculation and calculates the value.

Abstract: An image-taking apparatus changes a switching threshold value for switching between a color mode and a monochrome mode according to a maximum gain value set by a maximum gain setting unit so that switching between the color and monochrome modes can be optimally performed regardless of setting of the maximum gain value. The image-taking apparatus includes a threshold value correction unit configured to correct the switching threshold value according to the maximum gain value. The threshold value correction unit sets the switching threshold value with the maximum gain value set larger than an initial value to be smaller than the switching threshold value with the maximum gain value set smaller than the initial value.

Abstract: Provided is a solid-state imaging apparatus that is capable of preventing a harmful influence due to noise generated in a control line. The solid-state imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit for photoelectric converting to generate a signal; control lines for supplying control signals for driving the pixels; driving buffers for driving the control lines; and switching units for switching between a first path for supplying power source voltages from power source circuits to power source terminals of the driving buffers and a second path for supplying power source voltages from capacitors to the power source terminals of the driving buffers.

Abstract: When a conventional circuit is used in an image sensor which employs a pixel sharing technique, selection of pixels is not properly performed, that is, an invalid operation may be performed. To address this problem, a first storage unit which stores an address of a reading row, a second storage unit which stores an address of a shutter row, and a third storage unit for controlling an element shared by a plurality of pixels are provided in a row selection unit.

Abstract: In a conventional image pickup apparatus, a plurality of reset methods for resetting a photodiode cannot be set. A row selection unit is provided with a first storage unit for storing an address of a read row, a second storage unit for storing an address of a shutter row, and further a third storage unit for storing an address of a row in which potential of photodiode is fixed.

Abstract: An image pickup device which makes it possible to expand the dynamic range of photometry. The image pickup device comprises a pixel array, a pixel reader, a row selector, a column selector, a gain circuit, a gain selector. The pixel array comprises a plurality of pixels including photoelectric conversion elements and arranged in the horizontal direction and in the vertical direction. The pixel reader reads out selected pixel signals from the pixel array. The gain circuit is capable of having at least two gains set therein, and amplifies and outputs the pixel signals read out from the pixel array by the pixel reader. The gain selector sets different gains in the gain circuit such that pixel signals amplified by the different gains can be obtained for one-time read-out from the pixel array by the pixel reader.

Abstract: The present invention provides an image capturing apparatus, which comprises a plurality of photoelectric converter-containing pixels that are positioned horizontally and vertically and a gain circuit, has a gain controller that can control the gain of the gain circuit in N stages (where N is an integer equal to or greater than 2). The gain circuit outputs each of a plurality of signals given by the product of the output signal from one of the plurality of pixels and the gain in each stage of the N stages.

Abstract: A solid-state image pickup device includes: electrically coupled substrates on which circuit elements constituting a pixel are arranged; a photoelectric conversion element included in the pixel; a reading circuit that reads from the pixel, a signal based on a signal generated by the photoelectric conversion element; and first to n-th circuit sets each including a circuit element that reads a signal by a corresponding one of first to n-th reading modes. n is an integer such that The circuit elements arranged on one of the substrates is used to complete operations from generation of the signal by the photoelectric conversion element to reading of the signal by at least one of the first to n-th reading modes. The photoelectric conversion element, the reading circuit, and at least one of the first to n-th circuit sets are arranged on the one of the substrates.

Abstract: In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the for

Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Abstract: A solid-state imaging apparatus comprising a plurality of pixels generating a photoelectric conversion signal, a column amplifying unit corresponding to columns of the pixels, for outputting a first and second signals generated by amplifying the photoelectric conversion signal at a smaller first gain and larger second gain respectively, an analog to digital converter (21) for converting the first and second signals from an analog signal to a digital signal, a comparing unit (224) for inputting the digital signal from the analog to digital converter, level-shifting into the same gain level the first and second signals converted by the analog to digital converter, and thereafter detecting a gain error between the level-shifted first and second signals, and a correction unit (226) for correcting the first and second signals based on the gain error.

Abstract: An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector for collecting charge in response to incident light, a charge-to-voltage conversion mechanism, and a transfer gate for selectively transferring charge from the photodetector to the charge-to-voltage mechanism. The first and second sensor layers each have a thicknesses to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer is situated below the first sensor layer and has support circuitry for the pixels of the first and second sensor layers, and interlayer connectors are between the pixels of the first and second layers and the support circuitry.

Abstract: An image sensor includes: a plurality of image pixels providing a reset signal and a data signal; a signal providing apparatus generating a ramp signal, and sequentially providing the reset signal, the data signal, and the ramp signal; and an analog-to-digital converting apparatus converting the data signal into a digital signal by using a first timing at which the amplitude of the ramp signal is changed based on the amplitude of the reset signal and a second timing at which the amplitude of the ramp signal is changed based on the amplitude of the data signal, wherein the reset signal used to generate the ramp signal and the data signal which has been converted into the data digital signal may be output from the same image pixel.

Abstract: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier.

Abstract: An image sensor including a pixel array having vertical signal lines, each interconnected to one of columns of the pixel array, and a column processor including a unit readout circuit provided for each of sets of a predetermined number of columns. The unit readout circuit includes input switches, each connected to a corresponding one of the vertical signal lines and being sequentially turned on and off, an input capacitor having one end commonly connected to the input switches, a reference switch for selectively providing a reference voltage to the input capacitor, an operational amplifier connected to the other end of the input capacitor, a reset switch for selectively providing a short-circuit between input and output ends of the operational amplifier, and a feedback circuit provided for each of the columns and including a feedback switch and a feedback capacitor connected in series between the two ends of the operational amplifier.

Abstract: A pixel circuit uses two storage transistors to store two image signal samples, which include a reference signal produced by background noise of the pixel circuit and a signal produced by optical exposure of a photodetector and the background noise of the pixel circuit. An imaging integrated circuit uses a pixel circuit array, which may contain a number of such pixel circuits, and a charge acquisition circuit configured to read out image information obtained by the pixel circuit array. The charge acquisition circuit uses a first amplifier and a serially connected differential integrator that includes a second amplifier, a first differential integrator section and a second differential integrator section for the read out. A method for image information acquisition involves obtaining image information using the pixel circuit array and reading out the image information obtained by the pixel circuit array using the charge acquisition circuit.