Abstract: A touch panel includes a plurality of active pixel sensors arranged in an array to sense a touch event. Each sensor element includes a photo-sensing element coupled to a single amplifier. The sensor element is arranged to provide a sensing voltage indicative of a light level received by the photo-sensor in a sensing period. The sensing voltage is amplified by the amplifier into an output voltage in the sensing period. Following the sensing period, the output voltage and the sensing voltage are reset to a predetermined voltage level. Following the reset period, the photo-sensor as well as the amplifier is disabled for a period so that the sensing level is caused to drop below the predetermined voltage level.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array unit where pixels are disposed in a matrix and a column amplifying circuit that is disposed at an end of the pixel array unit and amplifies a unit signal of a unit pixel read from each pixel with at least first and second amplification factors, and outputs a plurality of amplified signals.

Abstract: In an image pickup apparatus including first circuits, second circuits, and conversion units, an operation period of the second circuit is shorter than an operation period of the first circuit, and a number of the first circuit arranged in each unit cell is greater than a number of the second circuit arranged in each unit cell.

Abstract: In accordance with an exemplary embodiment of the present invention, a method is provided to form an image using an active pixel sensor imager (108). The method includes placing an active pixel sensor (202) in electrical contact with a column readout line (204), lacing a sample-and-hold capacitor into electrical contact with the column readout line, and placing the sample-and-hold capacitor (314 or 320) in electrical contact with an input capacitor (324 or 334) on an amplifier (222). All of the input capacitor (324 or 334), the sample-and-hold capacitor (314 or 320), and the active pixel sensor (202) are in electrical contact for an overlapping period of time. A differential output (228) from the amplifier (222) is digitized, and used to form an image.

Abstract: A comparator includes: a first amplifying unit that includes a differential pair configured with a pair of transistors which are first and second transistors, and amplifies a difference of signals input to each of the gate electrodes of the first and second transistors, to output; a second amplifying unit that amplifies the signal output from the first amplifying unit; a first condenser that is disposed between a gate electrode of the first transistor and a reference signal supply unit; a second condenser that is disposed between a gate electrode of the second transistor and a pixel signal wiring; a third transistor that connects a connection point of the gate electrode of the first transistor and the first condenser to the pixel signal wiring; and a fourth transistor that connects a connection point of the gate electrode of the second transistor and the second condenser to the pixel signal wiring.

Abstract: In an image sensing apparatus having a plurality of unit cells, each including a plurality of photoelectric conversion elements and a common circuit shared by the plurality of photoelectric conversion elements, arranged in either one or two dimensions, the plurality of photoelectric conversion elements are arranged at a predetermined interval.

Abstract: A solid-state imaging apparatus has a pixel array in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a plurality of column signal lines are arranged, wherein each of the plurality of pixels includes a photoelectric converter including a first well formed in a semiconductor substrate and having a first conductivity type, and an impurity region arranged in the first well and having a second conductivity type different from the first conductivity type, and an in-pixel readout circuit which outputs, to the column signal line, a signal corresponding to charges generated in the photoelectric converter, the in-pixel readout circuit including a circuit element arranged in a second well having the first conductivity type, and wherein the first well and the second well are isolated by a semiconductor region having the second conductivity type.

Abstract: An image sensor, which comprises: an image sensing matrix, comprising at least one image sensing unit, for generating at least one image sensing signal according to a sensed image; an amplifier, for amplifying the image sensing signal to be an amplified image sensing signal according to at least one amplifying parameter; an operational circuit, for computing at least part of brightness of the sensed image sensed by the image sensing unit according to the amplified image sensing signal to generate at least one operational brightness signal; and a control unit, for adjusting the amplifying parameter, such that brightness information generated based on brightness values, which corresponds to the operational brightness signal, falls in a predetermined range.

Abstract: A method of reducing column fixed pattern noise including calibrating a readout circuit, wherein the readout circuit is electrically connected to at least one programmable gain amplifier and an analog-to-digital converter. Calibrating the readout circuit includes electrically disconnecting the readout circuit from a pixel output and electrically connecting a pixel reset input of the readout circuit to a pixel output signal input of the readout circuit. Calibrating the readout circuit further includes comparing a measured output of the readout circuit to a predetermined value and storing the comparison result in a non-transitory computer readable medium. The method further includes operating the readout circuit, the operating the readout circuit includes receiving a pixel sample signal and outputting a calibrated output based on an operating output and the stored comparison result.

Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.

Abstract: A solid-state imaging device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, and the like. The first row selecting section 20 causes each pixel unit of any m1-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L1n. The second row selecting section 30 causes each pixel unit of any m2-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L2n. The solid-state imaging device 1 causes each pixel unit of any m3-th row in the light receiving section 10 to accumulate charge generated in a photodiode in a charge accumulating section. m1 and m2 are different from each other.

Abstract: Embodiments of dual stage active pixel devices are described herein. Other examples, implementations, and related methods are also disclosed herein.

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: One or more embodiments relate to an image pickup apparatus including multiple pixels. Each of the multiple pixels includes a photoelectric-conversion unit, and an amplifier which outputs a signal based on charge generated by the photoelectric-conversion unit. Within an electric path between the photoelectric-conversion unit and an input node of the amplifier, there are disposed a first holder, a second holder disposed following the first holder, a first transfer unit which transfers charge to the first holder, a second transfer unit which transfers charge of the first holder to the second holder, and a third transfer unit which transfers charge of the second holder. The first holder includes a first-conductive-type first semiconductor region holding charge. The second holder includes a first-conductive-type second semiconductor region holding charge. Impurity concentration of the first semiconductor region is lower than impurity concentration of the second semiconductor region.

Abstract: An image pickup apparatus of an embodiment includes pixel units each including a photoelectric conversion unit and an amplification transistor that outputs a signal based on an electric carrier generated by the photoelectric conversion unit, a first output line to which signals from first and other pixel units are output, and a second output line to which signals from second and other pixel units are output. A connection unit is arranged to control an electric connection between input nodes of the amplification transistors of the first and second pixel units is arranged. A control unit is arranged to selectively output a signal from at least one of the first and second pixel units to the first output line out of the first and second output lines when the connection unit mutually connects the input nodes of the first and second pixel units.

Abstract: A signal for focus detection is generated by a first operation, in which a signal of at least one photoelectric conversion element included in a photoelectric conversion unit is read to an input node of an amplification unit and the signal is supplied to a common output line by the amplification unit and signals for forming an image are generated by a second operation, in which a signal of another photoelectric conversion element included in the same photoelectric conversion unit as that including the at least one photoelectric conversion element from which the signal has been read in the first operation is read to the input node of the amplification unit while holding the signal read in the first operation using the amplification unit and the signals are supplied to the common output line by the amplification unit.

Abstract: A solid-state image pickup device includes a pixel array unit that includes photoelectric conversion elements and in which a plurality of pixels are arranged in rows and columns that output, as pixel signals, electrical signals obtained by photoelectric conversion performed by amplifier elements to which pixel power supply voltage is supplied and that drive signal lines, a pixel power supply unit that generates the pixel power supply voltage from power supply voltage, the pixel power supply voltage being lower than the power supply voltage, and that supplies the pixel power supply voltage to the amplifier elements in the plurality of pixels, and a pixel signal read unit that reads pixel signals from the plurality of pixels.

Abstract: While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires.

Abstract: A column circuit for an image sensor includes a first column read circuit configured to read data of a first column line, and a second column read circuit configured to read data of a second column line, wherein, during a binning mode, data from two or more pixels are outputted through the first column line and stored in the first column read circuit in a first phase, data from two or more pixels are outputted through the second column line and stored in the second column read circuit in a second phase, and charges are shared between the first column read circuit and the second column read circuit in a third phase.

Abstract: In a driving method of device having plural pixels, each pixel comprises photoelectric converter, floating diffusion, transfer transistor to transfer charge of the photoelectric converter to the floating diffusion, amplifying transistor to amplify signal based on the transferred charge, and reset transistor to reset voltage of the floating diffusion, the method comprises first step of, after putting the transfer transistor into conduction state, resetting the charge of the photoelectric converter by putting the transfer transistor into non-conduction state in non-conduction state of the reset transistor, and second step of, after the first step and after putting the transfer transistor into the conduction state, transferring the charge of the photoelectric converter to the floating diffusion by putting the transfer transistor into the non-conduction state in the non-conduction state of the reset transistor, and the signal based on the charge transferred in the second step is amplified by the amplifying transi

Abstract: An image pickup device may include an image pickup unit in which unit pixels having photoelectric conversion elements are arranged, the unit pixels outputting pixel signals, a reference signal generation unit, a comparison unit that includes a differential amplifier unit and a reset unit, the differential amplifier unit comparing a voltage of the first input terminal to a voltage of the second input terminal, a measurement unit that measures a comparison time of the comparison unit from a comparison start to a comparison end, and a change unit that changes the voltage of the first input terminal so that a voltage difference between the first input terminal and the second input terminal is set to a voltage at which a comparison operation by the comparison unit is ensured after a reset operation by the reset unit.

Abstract: There is a need to provide an AD converter capable of reducing occurrence of a noise. An AD converter includes an operational amplifier and a clip circuit. The operational amplifier receives ramp voltage and voltage for an analog signal and allows output terminal voltage to transition from an H level to an L level when a change in the ramp voltage reaches the voltage for the analog signal. The clip circuit fixes an output terminal of the operational amplifier to clipping voltage after output voltage for the operational amplifier reaches threshold voltage for a latch circuit. Therefore, the AD converter can limit a range of output voltage, as a source of noise, for the operational amplifier and eliminate an unnecessary change in the output voltage after the threshold voltage for the latch circuit is reached.

Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode.

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract: A method drives an imaging system including: a plurality of pixels; an amplifier having an input node connected to the plurality of pixels via an input capacitor, and an output node connected to the input node via a feedback capacitor; and a reset unit configured to reset the input node to a base potential. The method includes the steps of: causing the input capacitor to hold noise output from one of the plurality of pixels; adding signals output from the two or more pixels in the feedback capacitor; and obtaining a difference between a signal applying a gain to a base signal output from the amplifier according to the reset of the input node of the amplifier and the signal added in the feedback capacitor.

Abstract: The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of unit cells are arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, and the pixel comprising a photoelectric conversion element and an in-pixel readout circuit which outputs a signal corresponding to charges generated in the photoelectric conversion element, power is supplied to the plurality of unit cells via a power supply line and a ground line, and at least one of the plurality of unit cells includes at least a part of a capacitive element having a first electrode connected to the power supply line and a second electrode connected to the ground line.

Abstract: Disclosed herein is an imaging device including: a pixel unit including a pixel disposed in a plane and a driving unit. The pixel includes an accumulating section configured to detect a physical quantity, and accumulate a charge corresponding to the physical quantity, a transfer section configured to transfer the charge from the accumulating section, a converting section configured to convert the charge into a voltage, an output section configured to output a signal of the voltage converted by the converting section, a reset section configured to reset the potential of the converting section, and a connecting section connected to the converting section. The driving unit is configured to transfer a signal for giving an instruction to transfer the charge, and a connecting signal for controlling connection and non-connection. The driving unit makes the charge transferred in a state of the converting sections being connected to each other.

Abstract: An image pickup apparatus includes a plurality of pixels. Each pixel includes a photoelectric conversion unit, an amplifying transistor, and a reset transistor. Each pixel is set into a selected state or a non-selected state according to a voltage supplied to an input node of an amplifying transistor via the reset transistor. A control unit controls the reset transistor to turn on or off by supplying a voltage to a control node of the reset transistor. More specifically, a first voltage is supplied to the control node of the reset transistor in the pixel at the selected state to control it in the off-state, and a second voltage is supplied to the control node of the reset transistor in the pixel at the non-selected state to control it to be in the off-state.

Abstract: In an auto-focusing (AF) sensor, it has been difficult to realize high-speed auto focusing and high-accuracy, auto focusing without increasing the scale of a circuit. In the present invention, a common buffer unit is provided for a plurality of memory cell units that are provided in each unit pixel.

Abstract: Each pixel has a photoelectric conversion unit configured to convert light into electrical charges and to store the electrical charges, an amplifying unit configured to amplify a signal based on the electrical charges stored in the photoelectric conversion unit and to output the signal to an output line, and a reset unit configured to reset a input part of the amplifying unit. A clip unit, which is configured to limit an electric voltage of the output line, includes an amplifying circuitry for amplifying a signal based on the electric voltage of the output line and an MOS transistor for limiting the electric voltage of the output line based on the difference in electric potential between the gate and source. The clip unit controls the electric potential of the gate of the MOS transistor by the amplifying circuitry.

Abstract: In a solid-state imaging apparatus, if the total read out time of all pixels is shortened when effective pixels are thinned out without thinning out OB pixels, then the rows have different reset time periods, and the problem of uneven charge accumulation time periods arises. An improvement by the present invention is that, if no signals are read out from a part of the rows in an effective pixel region to skip the rows, then the time period in which the rows to be skipped are selected is made shorter than that in which the rows from which signals are read out are selected, and the pixels in the optical black pixel region and those in the effective pixel region are driven by the drive pulses of patterns different from each other.

Abstract: Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device in which micro pads are formed on the wiring layer side and a signal processing chip having micro pads formed on the wiring layer at the positions corresponding to the micro pads of the MOS solid-state image pickup device are connected by micro bumps. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract: An image sensor includes a pixel unit having first and second photoelectric converters, an amplifier provided commonly for the first and second photoelectric converters, first and second transfer transistors configured to respectively transfer charges generated in the first and second electric converters to an input portion of the amplifier. The signal read out by the readout portion includes a first optical signal read out in a state in which charges are transferred from the first photoelectric converter to the input portion by the first transfer transistor, and a second optical signal read out, after the readout of the first optical signal, in a state in which charges are transferred from the second photoelectric converter to the input portion by the second transfer transistor.

Abstract: A solid-state imaging device with a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Abstract: There is provided a solid state imaging apparatus including a pixel array in which a plurality of unit pixels are arranged two-dimensionally. Each pixel includes a photoelectric conversion element, a transfer transistor which transfers a charge accumulated in the photoelectric conversion element to floating diffusion, a reset transistor which resets the charge of the floating diffusion, and an output transistor which outputs the charge of the floating diffusion. The floating diffusion of at least one of the plurality of unit pixels is electrically connected via the output transistor.

Abstract: A driving method for an image pickup apparatus that includes a plurality of pixels each including a photoelectric conversion portion includes performing photoelectric conversion in each of the plurality of photoelectric conversion portions during a period between first time and second time, generating a plurality of first signals, each being a signal deriving from electric charge generated through the photoelectric conversion in the photoelectric conversion portion, which is a plurality of signals to be generated for each of the plurality of pixels, and generating a plurality of second signals by performing moving average processing on the plurality of first signals.

Abstract: An amplifier is provided. The amplifier includes a differential amplifier including a tail, a current mirror connected between output terminals of the differential amplifier and a power line receiving a supply voltage, and a first switching circuit for connecting and disconnecting one of the output terminals of the differential amplifier to and from the tail in response to a first switching signal.

Abstract: A solid-state imaging device includes a plurality of AD conversion units respectively provided in a plurality of columns and each configured to convert a pixel signal converted by unit pixels provided in an associated column into digital data of N bits, and a plurality of data storage units respectively provided in the columns. The data storage units each include N flip-flop circuits. The solid-state imaging device further includes data switching units each configured to switch between a first state in which the digital data converted by the AD conversion unit is stored in the data storage unit of the associated column, and a second state in which the N flip-flop circuits in each of the data storage units are serially connected.

Abstract: An apparatus for acquiring an i-bit digital code by a first stage AD conversion and a j-bit digital code by a second stage AD conversion includes a comparing unit which compares a reference signal and an analog signal in the first stage AD conversion; and an amplifying unit for outputting an amplified residual signal acquired by amplifying a difference between the analog signal and an analog signal corresponding to the i-bit digital code. The comparing unit compares the amplified residual signal and the reference signal in the second stage AD conversion.

Abstract: In an image sensing apparatus having a plurality of unit cells, each including a plurality of photoelectric conversion elements and a common circuit shared by the plurality of photoelectric conversion elements, arranged in either one or two dimensions, the plurality of photoelectric conversion elements are arranged at a predetermined interval.

Abstract: An object of the present invention is to provide a solid-state imaging apparatus capable of providing a high S/N ratio in a plurality of operation modes, and a method for driving the same. Provided is a solid-state imaging apparatus including: a plurality of pixels (1), each of the pixels including a photoelectric conversion unit for generating a charge by photoelectric conversion and accumulating the charge; and an amplifier 2 connected to a plurality of the pixels, to amplify the charge generated by the pixels, wherein the amplifier 2 includes an offset voltage setting unit (SW1) for setting at least two offset voltages.

Abstract: An image pickup apparatus, a method for driving the image pickup apparatus, an image pickup system, and a method for driving the image pickup system output a digital signal based on a difference between signals output from a plurality of pixels and a digital signal based on the sum of the signals output from the pixels.

Abstract: There is provided an image pickup apparatus which outputs a digital signal based on a comparison result signal that changes the signal value at Nth (where N is an integer of 1 or higher) among comparison result signals output by a plurality of comparators.

Abstract: The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.

Abstract: A fast-settling line driver circuit capable of high-speed operation. The line driver is particularly well-suited for operation in a high-resolution imaging system. The line driver circuit comprises a signal amplifier that is configured in a negative feedback loop and connected to a bus line through a switch network. The switch network is disposed inside the feedback loop while the line driver is transmitting a signal onto the bus line. This configuration reduces the settling time of the line driver by substantially eliminating the effect of the switch resistance on the RC time constant. The line driver also comprises offset cancellation and presettle circuits that improve the integrity of the output signal and reduce the power consumption of the system.

Abstract: Disclosed herein is a solid-state image pickup apparatus, including a pixel array section in which a unit pixel including a photoelectric conversion section and a charge detection section for detecting charge generated by photoelectric conversion by the photoelectric conversion section is disposed; a driving section adapted to carry out driving of reading out a signal of the unit pixel divisionally by twice as a first signal and a second signal; and a signal processing section adapted to set the first signal read out first from the unit pixel as a reference voltage for a processable input voltage range of the signal processing section, adjust the reference voltage so that the first and second signals may be included in the input voltage range and carry out signal processing for the first and second signals using the adjusted reference voltage.

Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

Abstract: This invention targets improvement in CMOS sensors using a multiplexed read-out architecture in which pixels are output at the pixel VN level instead of the line/reference amplifier level. The pixel signal voltage VN and offset voltage VNS are read sequentially, eliminating the differential structure. Interference rejection, usually achieved by a differential signal, is obtained by using a CDS (Correlated Double Sampler) in the same way as in the prior art.