Abstract: A display device includes a substrate of a display panel, including: a display area and a non-display area, an upper surface and a lower surface each in the display area and the non-display area, and side surfaces connecting the upper and lower surfaces to each other; a signal line on the upper surface of the substrate; a circuit substrate on a side surface of the substrate; and a connection electrode on the upper surface of the substrate in the non-display area thereof, where the connection electrode electrically connects the signal line and the circuit substrate to each other. In the non-display area, the substrate further includes: a first etched portion recessed from the side surface at which the circuit substrate is disposed, and a second etched portion extending from the first etched portion toward the signal line, and the connection electrode is in the first and second etched portions.

Abstract: The present disclosure relates to a touch dimming device including a touch panel and an active color changing film. The touch panel includes a first electrode and a second electrode to perform touch detection according to a coupling capacitance between the first electrode and the second electrode. The active color changing film includes a third electrode and a polymer layer. The polymer layer is configured to change a light transmittance of the active color changing film according to a voltage difference between the second electrode and the third electrode.

Abstract: A display device includes a substrate of a display panel, including: a display area and a non-display area, an upper surface and a lower surface each in the display area and the non-display area, and side surfaces connecting the upper and lower surfaces to each other; a signal line on the upper surface of the substrate; a circuit substrate on a side surface of the substrate; and a connection electrode on the upper surface of the substrate in the non-display area thereof, where the connection electrode electrically connects the signal line and the circuit substrate to each other. In the non-display area, the substrate further includes: a first etched portion recessed from the side surface at which the circuit substrate is disposed, and a second etched portion extending from the first etched portion toward the signal line, and the connection electrode is in the first and second etched portions.

Abstract: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

Abstract: A display device includes a substrate of a display panel, including: a display area and a non-display area, an upper surface and a lower surface each in the display area and the non-display area, and side surfaces connecting the upper and lower surfaces to each other; a signal line on the upper surface of the substrate; a circuit substrate on a side surface of the substrate; and a connection electrode on the upper surface of the substrate in the non-display area thereof, where the connection electrode electrically connects the signal line and the circuit substrate to each other. In the non-display area, the substrate further includes: a first etched portion recessed from the side surface at which the circuit substrate is disposed, and a second etched portion extending from the first etched portion toward the signal line, and the connection electrode is in the first and second etched portions.

Abstract: Even when a width of a frame region is narrowed, expansion and movement of impurity ions into a display region and peeling off of a seal material are prevented or suppressed. A substrate includes a first frame region positioned outside a display region, a second frame region positioned outside the first frame region, and a third frame region positioned outside the second frame region. The substrate includes a first electrode in the first frame region, a second electrode in the second frame region, and a third electrode in the third frame region. A first potential is applied to the first electrode, a second potential larger in an absolute value than the first potential is applied to the second electrode, and a third potential different from the second potential is applied to the third electrode.

Abstract: An array substrate and a manufacturing method thereof, and a display panel including the array substrate and a driving method thereof are provided. Each of the sub-pixel units of the array substrate includes a first thin film transistor and a second thin film transistor; the first thin film transistor includes a first gate electrode, a first source electrode and a first drain electrode; the second thin film transistor includes a second gate electrode, a second source electrode and a second drain electrode; each of the sub-pixel unit further includes a first pixel electrode electrically connected to the first drain electrode, a second pixel electrode electrically connected to the second drain electrode; and the first pixel electrode and the second pixel electrode are disposed in different layers and insulated with each other.

Abstract: A display device includes a display area as an area having a plurality pixels each including a thin film transistor, and adapted to display an image, and a dummy pixel area formed outside the display area, and having a plurality of dummy pixels. The dummy pixel includes a dummy gate signal line parallel to a gate signal line of the thin film transistor, and a semiconductor layer intersecting with the dummy gate signal line via an insulating layer. Just one conductor layer is connected to the semiconductor layer.

Abstract: A method of fabricating an array substrate includes forming a first metal layer, a gate insulating material layer and an oxide semiconductor material layer on a substrate; heat-treating the substrate having the oxide semiconductor material layer at a temperature of about 300 degrees Celsius to about 500 degrees Celsius; patterning the oxide semiconductor material layer, the gate insulating material layer and the first metal layer, thereby forming a gate electrode, a gate insulating layer and an oxide semiconductor layer; forming a gate line connected to the gate electrode and made of low resistance metal material; forming source and drain electrodes, a data line and a pixel electrode, the source and drain electrodes and the data line having a double-layered structure of a transparent conductive material layer and a low resistance metal material layer, the pixel electrode made of the transparent conductive material layer.

Abstract: A TFT substrate (100) includes a gate line (2) and a source line (4), a TFT (6), a transparent pixel electrode (30) electrically coupled with the TFT, a transparent electrically-conductive layer (34) including a transparent connecting portion (34A) connected with the drain electrode (15) of the TFT and the transparent pixel electrode, and a transparent insulating layer (28) provided between the transparent pixel electrode and the transparent electrically-conductive layer. The transparent connecting portion (34A) includes a first connecting portion (C1) which is a portion connected with the drain electrode and a second connecting portion (C2) which is a portion connected with the transparent pixel electrode. At least part of the second connecting portion (C2) is present in a region enclosed by the gate line and the source line. In the second connecting portion, a portion ranging from the transparent connecting portion to the transparent pixel electrode is configured to allow transmission of light.

Abstract: A TFT array substrate includes a first electrode layer and a second electrode layer disposed below the first electrode layer. The first electrode layer includes a strip-like first electrode, and the second electrode layer is a sheet-like electrode. The strip-like first electrode includes a bent portion. The second electrode layer includes at least one opening, the opening is located below the bent portion.

Abstract: There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 ?m or less, a height H is 0.5 ?m to 10 ?m, a diameter is 20 ?m or less, and an angle ? is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.

Abstract: A pixel structure including a scan line, a data line, an active device, a pixel electrode, a capacitor electrode line, a semi-conductive pattern layer and at least one dielectric layer is provided. The active device is electrically connected to the scan line and the data line. The pixel electrode is electrically connected to the active device. The capacitor electrode line is located under the pixel electrode. A first storage capacitor is formed between the capacitor electrode line and the pixel electrode. The semi-conductive pattern layer is disposed between the capacitor electrode line and the pixel electrode, the pixel electrode is electrically connected to the semi-conductive pattern layer. A second storage capacitor is formed between the semi-conductive pattern layer and the capacitor electrode line. The dielectric layer is disposed between the capacitor electrode line and the pixel electrode and located between the semi-conductive pattern layer and the capacitor electrode line.

Abstract: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

Abstract: An object of the present invention is to provide a liquid crystal display device which allows a desirable storage capacitor to be ensured in a pixel without decreasing the aperture ratio in response to changes in frame frequency. In a liquid crystal display device including a pixel transistor and two capacitive elements using an oxide semiconductor material in each pixel, one of the capacitive elements comprises a light-transmitting material to improve the aperture ratio of the pixel. Furthermore, through the use of characteristics of the light-transmitting capacitive element, the size of the storage capacitor in the pixel is varied by adjusting the voltage value of a capacitance value in response to the frame frequency varied depending on images displayed.

Abstract: An array substrate comprises a substrate, a passivation layer on a surface of the substrate, a first organic film on a surface of the passivation layer and provided with a groove, a common electrode disposed on a surface of the first organic film outside the groove, and a pixel electrode disposed in the groove. A vertical projection of the common electrode on the surface of the passivation layer does not overlap with a vertical projection of the pixel electrode on the surface of the passivation layer.

Abstract: An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.

Abstract: A liquid crystal display device includes a gate line and a gate electrode connected to the gate line, on a substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer over the gate electrode; an ohmic contact layer on the active layer; first source and drain electrodes on the ohmic contact layer; second source and drain electrodes connected to the first source and drain electrodes, respectively; a data line extending from the source electrode and crossing the gate line to define a pixel region; and a pixel electrode in the pixel region and extending from the second drain electrode.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: A method of driving a bi-stable chiral splay nematic mode liquid crystal display device including first and second substrates, a liquid crystal layer between the first and second substrates, first and second reset electrodes on one of inner surfaces of the first and second substrates, a pixel electrode on the inner surface of the first substrate and a common electrode on the inner surface of the second substrate includes: applying a data voltage and a common voltage to the pixel electrode and the common electrode, respectively, such that a vertical electric field is generated and the liquid crystal layer transitions from a splay state to a ?-twist state during a writing period; and floating the pixel electrode and the common electrode such that the liquid crystal layer keeps the ?-twist state and displays a present image during a memory period.

Abstract: An LCD device includes dual gate transistors provided to an output portion of the shift register for outputting a gate voltage. As such, the charge/discharge time of the output portion is reduced so the response time of liquid crystal is improved.

Abstract: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

Abstract: A liquid crystal display device according to the present invention is a liquid crystal display device in which liquid crystals are sealed between a TFT array substrate, and a counter substrate formed with a counter electrode. A plurality of scanning signal wirings and a plurality of image signal wirings are formed in a matrix on the TFT array substrate. The counter electrode is configured from a plurality of counter electrode lines. Each of the plurality of counter electrode lines is provided along a corresponding one of the plurality of scanning signal wirings or a corresponding one of the plurality of image signal wirings in plan view. Each of the plurality of counter electrode lines has a potential distribution in an extending direction. The respective potential distributions for the plurality of counter electrode lines are different.

Abstract: A liquid crystal display device includes a substrate having a display region and a non-display region. In the display region, the gate line and a data line cross to define a pixel region and a thin film transistor is disposed at the crossing portion of the gate and data lines. The thin film transistor includes a gate electrode and source and drain electrodes. A peripheral line having a plurality of openings is disposed in the non-display region. The openings are slits, rectangles, circles, or triangles. The openings relieve plasma during dry-etching of the peripheral line. A pixel electrode is connected to the drain electrode in the pixel region.

Abstract: A liquid crystal display device includes: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a pixel region; a thin film transistor and a pixel electrode in the pixel region on the first substrate, the thin film transistor connected to the gate line and the data line, the pixel electrode connected to the thin film transistor; a common electrode on the second substrate, the common electrode facing the pixel electrode; at least one first reset electrode and at least one second reset electrode on one of the first and second substrates, the at least one first reset electrode and the at least one second reset electrode spaced apart from each other; and a bi-stable chiral splay nematic liquid crystal layer between the first and second substrates, the bi-stable chiral splay nematic liquid crystal layer having bi-stable states of a splay state as an initial state and a ?-twist state, whe

Abstract: A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device. In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.

Abstract: Disclosed is a display device that has a light detecting element (D1) disposed in a pixel region (1), an opening (a through hole) (19a) formed in an insulating film (19) that is disposed above the light detecting element (D1), and a transparent electrode (20) formed in the opening (19a), and that can reduce occurrence of leakage between the transparent electrode (20) and other wiring line (SL). Specifically disclosed is a display device that has an active matrix substrate (100) in which a first wiring line (SL) and a second wiring line (GL) are formed so as to cross each other, and a light detecting element (D1) disposed on a pixel region (1) in the active matrix substrate (100).

Abstract: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.

Abstract: A wiring board is provided which can prevent a metal electrode from corroding due to a defect in a transparent conductive electrode covering an end face of an organic insulating film. An active-matrix substrate includes: a glass substrate; a metal wire provided on the glass substrate; a gate insulating film covering the metal wire; an interlayer insulating film covering the gate insulating film; and a transparent electrode formed on the interlayer insulating film. The scanning wire provided with a terminal area where the transparent electrode is laminated directly on the scanning wire. The transparent electrode extends over the terminal area in such a way as to cover an end face of the interlayer insulating film that faces the terminal area and an end face of the gate insulating film that faces the terminal area.

Abstract: To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided.

Abstract: A display device includes a substrate, a display region having a pixel switch, and a transparent common electrode, a peripheral region having a gate signal line connected to the pixel switch, and a predetermined connection line, an insulating layer disposed on the gate signal line and the predetermined connection line, a conductive layer, a first semiconductor film disposed between the insulating layer and the conductive layer, and a second semiconductor film disposed between the insulating layer and the conductor layer and separated from the first semiconductor film. The conductor layer is connected to the gate signal line via a pair of diodes. The gate signal line is arranged in the display region and the peripheral region, the predetermined connection line is arranged in the peripheral region, and the transparent common electrode is arranged in the display region. The predetermined connection line is shorter in length than the gate signal line.

Abstract: A transparent electrode is described and includes metallic nanowires and a polymeric overcoat layer for protecting the nanowires from corrosion and abrasion. The polymeric overcoat layer includes nanoparticles selected from the group consisting of antimony tin oxide, zinc oxide and indium tin oxide, and has a sheet resistance of greater than about 107 ohm/sq. The transparent electrode can be used in electronic displays such as polymer-dispersed liquid crystal, liquid crystal, electrophoretic, electrochromic, thermochromic, electroluminescent and plasma displays.

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

Abstract: A semiconductor light emitting device includes a laminate section in which p-type layer 5 and n-type layer 7 are laminated such that they sandwich active layer 6. A part of light emitted from active layer 6 exits from a first surface of the laminate section. The semiconductor light emitting device includes a reflection layer that is located on a second surface opposite to the first surface of the laminate section and that reflects light that is emitted from active layer 6 and that enters from the second surface in the direction of the active layer side. The reflection layer includes metal layer 1 and transparent electrode films 2 to 4 that are transparent to a wave length of light that enters from active layer 6 and that have conductivity. The refractive index of transparent conduction film 3 is lower than that of each of transparent conduction films 2 and 4 and p-type layer 5. The absorption coefficient of transparent conduction film 3 is smaller than that of each of transparent conduction films 2 and 4.

Abstract: Hybrid transparent conducting materials are disclosed with combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and conductive nanostructures preferably are silver nanowires.

Abstract: An energy storage device such as a metal-insulator-metal capacitor and a method for manufacturing the energy storage device. The metal-insulator-metal capacitor includes an insulating material positioned between a bottom electrode or bottom plate and a top electrode or top plate. The surface area of the bottom electrode is greater than the surface area of the insulating material and the surface area of the insulating material is greater than the surface area of the top electrode. The top electrode and the insulating layer have edges that are laterally within and spaced apart from edges of the bottom electrode. A protective layer covers the top electrode, the edges of the top electrode, and the portions of the insulating layer that are uncovered by the top electrode. The protective layer serves as an etch mask during the formation of the bottom electrode.

Abstract: A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode.

Abstract: A display device includes a substrate, a display region having a pixel switch, and a transparent common electrode, a peripheral region having a gate signal line connected to the pixel switch, and a common connection line connected to the transparent common electrode, an insulating layer, a conductive layer, a first semiconductor film disposed between the insulating layer and the conductive layer, and a second semiconductor film disposed between the insulating layer and the conductor layer and separated from the first semiconductor film. The conductor layer is connected to the gate signal line, and the gate signal line is arranged in the display region and the peripheral region. The common connection line is arranged in the peripheral region and is connected to the transparent common electrode in the peripheral region, and the transparent common electrode is arranged in the display region.

Abstract: A display device includes a substrate, a display region having a pixel switch, and a transparent common electrode, a peripheral region having a gate signal line connected to the pixel switch, and a common connection line connected to the transparent common electrode, an insulating layer, a conductive layer, a first semiconductor film disposed between the insulating layer and the conductive layer, and a second semiconductor film disposed between the insulating layer and the conductor layer and separated from the first semiconductor film. The conductor layer is connected to the gate signal line, and the gate signal line is arranged in the display region and the peripheral region. The common connection line is arranged in the peripheral region and is connected to the transparent common electrode in the peripheral region, and the transparent common electrode is arranged in the display region.

Abstract: A liquid crystal display device includes a gate line and a gate electrode connected to the gate line, on a substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer over the gate electrode; an ohmic contact layer on the active layer; first source and drain electrodes on the ohmic contact layer; second source and drain electrodes connected to the first source and drain electrodes, respectively; a data line extending from the source electrode and crossing the gate line to define a pixel region; and a pixel electrode in the pixel region and extending from the second drain electrode.

Abstract: A thin-film transistor array substrate includes a source line that is formed above a gate insulating layer covering a gate line, a semiconductor layer that is formed on the gate insulating layer and placed in a substantially whole area below a drain electrode, in a substantially whole area below a source electrode, in a substantially whole area below the source line and in a position opposite to the gate electrode, a pixel electrode that is formed directly on the drain electrode, a transparent conductive pattern that is formed directly on the source electrode and the source line in the same layer as the pixel electrode, and a counter electrode that is formed on an interlayer insulating layer covering the pixel electrode and the transparent conductive pattern and generates a fringe electric field with the pixel electrode.

Abstract: The present invention relates to an in-plane switching mode LCD, in which data electrodes and common electrodes in a unit pixel have the same light transmitting area to reduce the luminance difference according to positive or negative polarity of an applied DC voltage. The in-plane switching mode LCD comprises a first substrate; a plurality of data lines on the first substrate; data electrodes and common electrodes alternately formed in an unit pixel area, the data electrodes having a first transmittance area and the common electrodes having a second transmittance area, wherein the first transmittance area equals the second transmittance area; and a shielding layer formed under outer most ones of the common electrodes, and wherein at least one of the data electrodes has a first width, and at least one of the common electrodes has a second width, the second width being greater than the first width.

Abstract: To provide a structure suitable for a common connection portion provided in a display panel. A common connection portion provided in an outer region of a pixel portion has a stacked structure of an insulating layer formed using the same layer as a gate insulating layer, an oxide semiconductor layer formed using the same layer as a second oxide semiconductor layer, and a conductive layer (also referred to as a common potential line) formed using the same layer as the conductive layer, in which the conductive layer (also referred to as the common potential line) is connected to a common electrode through an opening in an interlayer insulating layer provided over the first oxide semiconductor layer and an electrode opposite to a pixel electrode is electrically connected to the common electrode through conductive particles.

Abstract: A display device includes a substrate, a display region having a pixel switch, a pixel electrode which is connected to the pixel switch, and a transparent common electrode formed over the substrate, a peripheral region having a gate signal line which is connected to the pixel switch, and a common connection line which is connected to the transparent common electrode, an insulating layer which is disposed on the gate signal line and the common connection line, a conductive layer which is disposed on the insulating layer and crosses the gate signal line and crosses the common connection line in the peripheral region, a first semiconductor film which is disposed between the insulating layer and the conductive layer, and a second semiconductor film which is disposed between the insulating layer and the conductive layer and is separated from the first semiconductor film.

Abstract: According to one embodiment, a liquid crystal display includes a first substrate including a gate wire, a source wire intersecting with the gate wire, a pixel electrode with a contact portion and a main pixel electrode extending from the contact portion, and a semiconductor layer arranged under the source wire and intersecting with the gate wire and bending under the source wire so as to extend to below the contact portion, a second substrate opposed to the array substrate, and a liquid crystal layer between the first and second substrate. The semiconductor layer is electrically connected to the source wire on one side of a position of the gate wire and to the contact portion on another side of the gate wire.

Abstract: A display panel with half source driver structure and a display data supplying method thereof are disclosed. The display panel includes a plurality of gate driving circuits, a data line, a plurality of first gate lines and second gate lines, a plurality of first pixels and second pixels. The first pixels are arranged along the data line and form two columns. The first pixels are disposed at one side of the data line and electrically coupled to the respective first gate lines. The second pixels are arranged along the data line and form two columns. The second pixels are disposed at an opposite side of the data lines and electrically coupled to the respective second gate lines. The data line has a bending portion between each two sequentially connected first pixels. The gate driving circuits are electrically coupled to the first gate lines and the second gate lines.

Abstract: A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.