Abstract: An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

Abstract: The present invention relates to an optical assembly, a backlight unit, and a display apparatus thereof. According to an embodiment of the present invention, an optical assembly includes a first layer, a plurality of light sources disposed over the first layer, a second layer that is disposed above the first layer and covering the plurality of light sources, and at least one reflection layer between the first layer and the second layer, wherein the reflection layer includes at least a first portion and a second portion having different reflectances.

Abstract: A display substrate includes a base substrate, a gate-line on the base substrate, a data-line crossing the gate-line, a pixel area defined on the base substrate, a gate-pad part connected to an end portion of the gate-line and including a gate corrosion member, and a data-pad part connected to an end portion of the data-line and including a data corrosion member.

Abstract: A liquid crystal display device is provided with a thin film transistor which includes a gate electrode film that is provided in a first electrode layer located over a first insulating layer, a semiconductor film that is disposed over the gate electrode film via a second insulating layer, a drain electrode and a source electrode that are provided in a second electrode layer located over the semiconductor film and are in contact with an upper surface of the semiconductor film, and a light blocking film that is disposed under the first insulating layer. At least a part thereof overlaps the semiconductor film and the gate electrode film in a plan view. One of the drain electrode and the source electrode is connected to a gate line, and the light blocking film is electrically connected to the source electrode.

Abstract: According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0 to 5.0% is used as an etching gas; and pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more.

Abstract: Provided are a liquid crystal display device with horizontal electric field mode, in which a decrease in driving speed can be suppressed by reducing the resistance of a wiring even when the number of pixels is increased, and a manufacturing method thereof. One of a scan wiring and a signal wiring is divided in an intersection portion where the scan wiring and the signal wiring intersect with each other, and the separated wirings are connected with a connection electrode positioned over a thick insulating film. Accordingly, parasitic capacitance at the intersection portion can be reduced, preventing the decrease in the driving speed. The connection electrode is formed at the same time as formation of a pixel electrode and a common electrode using a low-resistance metal, which contributes to the reduction in manufacturing process of the liquid crystal display device.

Abstract: A display device includes a first base substrate, a second base substrate, a liquid crystal layer, a conductive protrusion structure and an electrode structure. The second base substrate is disposed opposite to the first base substrate. The liquid crystal layer is disposed between the first and second base substrates. The conductive protrusion structure is disposed on one of the first and second base substrates. The electrode structure is at least disposed on the first or second base substrate having the conductive protrusion structure.

Abstract: A liquid crystal display device having a color filter on TFT (COT) structure for high picture quality, high performance display and a method of fabricating the same are provided to reduce the luminance difference between a pixel portion and an outer portion by laminating color pigments in black matrix regions, forming a light blocking pattern to use as a black matrix, and configuring the light blocking pattern to have three layers to achieve black luminance.

Abstract: A liquid crystal display includes a substrate, a thin film transistor, a first protection layer, a pixel electrode, a light blocking layer, a second protection layer, and a roof layer. The thin film transistor is disposed on the substrate. The first protection layer is disposed on the thin film transistor. The pixel electrode is disposed on the first protection layer. The light blocking layer is disposed on the pixel electrode to cover the thin film transistor. The second protection layer is disposed on the light blocking layer. The roof layer is disposed to face the pixel electrode, wherein a plurality of microcavities having injection holes are formed between the pixel electrode and the roof layer. The microcavities comprise liquid crystal molecules, and the first protection layer and the second protection layer have different etch rates.

Abstract: A display device improves horizontal crosstalk and an aperture ratio, and includes: a substrate; a gate line and a data line formed on the substrate; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; a light block overlapping the thin film transistor on the pixel electrode; a light block passivation layer overlapping the thin film transistor and the data line on the light block; a common electrode formed on the pixel electrode, spaced apart from the pixel electrode with a plurality of microcavities interposed therebetween; a roof layer formed on the common electrode; an injection hole exposing a part of each of the plurality of microcavities; a liquid crystal layer filling the plurality of microcavities; and an encapsulation layer formed on the roof layer covering the injection hole to seal the microcavity.

Abstract: A semiconductor device (100A) according to the present invention includes: a thin-film transistor (10); a first insulating layer (9) which has been formed over the thin-film transistor (10); a second insulating layer (11) which has been formed on the first insulating layer (9) and which has a hole (21a); and an opaque layer (12a) which is arranged so as to overlap an oxide semiconductor layer (5) when viewed along a normal to the substrate (1). The opaque layer (12a) has been formed in the hole (21a). The opaque layer (12a) has a raised and curved upper surface and the upper surface of the second insulating layer (11) is located closer to the substrate (1) than the upper surface of the opaque layer (12a) is.

Abstract: A display panel includes a substrate including a plurality of thin-film transistors thereon, a plurality of gate lines respectively connected to a thin film transistor and disposed on the substrate, a color filter layer disposed on the substrate and the gate lines, a black matrix disposed on the color filter and overlapped with the gate lines, and a hole defined in the black matrix and exposing the color filter layer, a first electrode disposed on the color filter and electrically connected to the thin-film transistor and an image displaying layer disposed on the first electrode.

Abstract: A touch panel includes a touch sensor layer including a first transparent electrode and a second transparent electrode, wherein an arrangement direction of the first transparent electrode can be perpendicular to that of the second transparent electrode, and both of the first and second transparent electrodes include two transparent metallic patterns which are stacked and electrically connected to each other.

Abstract: A liquid crystal display device includes: a substrate; a thin film transistor (TFT) having a semiconductive layer formed on the substrate and source and drain electrodes formed on the semiconductive layer; an interlayer insulating layer formed on the thin film transistor and formed with a contact hole partially exposing the drain electrode; a first light blocking structure-forming layer covering the contact hole and connected to the drain electrode; a second light blocking structure-forming layer formed on the first light blocking structure-forming layer; a pixel electrode formed on the interlayer insulating layer; and a common electrode disposed to face the pixel electrode, wherein at least one microcavity having a respective liquid crystal injection hole is formed between the pixel electrode and the common electrode, and the microcavity is filled to contain therein a liquid crystal layer portion formed of liquid crystal molecules.

Abstract: A liquid crystal display includes a first gate line; a common voltage line separated from the first gate line; a data line insulated from and crossing the first gate line and the common voltage line; a first switching element connected to the first gate line and the data line; a second switching element connected to the first gate line and the data line; a first liquid crystal capacitor connected to the first switching element; a second liquid crystal capacitor connected to the second switching element; a third switching element connected to the first switching element; an assistance capacitor connected to the third switching element and the common voltage line; and a shielding electrode extending in the same direction as the first gate line and connected to the first switching element.

Abstract: By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

Abstract: A liquid crystal display device includes a substrate, a thin film transistor disposed on the substrate, a plurality of color filters disposed on the substrate, a light blocking member disposed between the plurality of color filters and on the thin film transistor, and a pixel electrode disposed on at least one of the plurality of color filters. The pixel electrode comprises a planar shape electrode and a plurality of minute branches extending from the planar shape electrode. The at least one of the plurality of color filters or the light blocking member comprises a step forming portion overlapped by the planar shape electrode.

Abstract: A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.

Abstract: Pixel electrodes (17a and 17b) are provided in a pixel (101), and the pixel (101) is associated with a data signal line (15x), scanning signal lines (16a and 16b), and transistors (12a and 12b). One pixel electrode (17a) is connected to the data signal line (15x) via the transistor (12a). The other pixel electrode (17b) is connected to the pixel electrode (17a) via a capacitor (C101) and is connected to the data signal line (15x) via the transistor (12b). Storage capacitance (Cha and Chb) is formed between the pixel electrodes (17a and 17b) of the pixel (101) and a scanning signal line (16d) associated with a pixel (100). Thus, a configuration of a liquid crystal display device of a capacitively coupled pixel division mode is proposed in which a decline in display quality caused by image sticking of a sub-pixel is less likely to occur.

Abstract: By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

Abstract: A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.

Abstract: A liquid crystal display device and a liquid crystal display panel based on three-dimensional transistor thereof are provided. The liquid crystal display panel includes an array substrate, a printed circuit board, a first chip on film with an integrated circuit, and At least one connector connected between the array substrate and the printed circuit board. The first chip on film is attached between the array substrate and the printed circuit board. The array substrate and the printed circuit board can be supported by the connectors effectively. The connectors share gravity of the printed circuit board with the first chip on film attached between the array substrate and the printed circuit board. Therefore, the present disclosure can avoid damage to lines of the first chip on film and improve the yield rate of the quality of the liquid crystal display panel based on three-dimensional transistor.

Abstract: A thin film transistor liquid crystal display (TFT-LCD) array substrate and a manufacturing method thereof are provided. The TFT-LCD array substrate comprises a gate line and a data line. A pixel electrode and a thin film transistor (TFT) are formed in a pixel region defined by intersecting of the gate line and the data line. A light-blocking layer is formed over a TFT channel region of the thin film transistor.

Abstract: An electro-optical device includes a pixel electrode provided on a substrate, a transistor provided between the substrate and the pixel electrode, a first capacitor electrode provided between the pixel electrode and the transistor, and be electrically connected to the pixel electrode and the transistor, a second capacitor electrode provided between the pixel electrode and the first capacitor electrode, be located so as to be opposite the first capacitor electrode via a capacitor insulating film, and be supplied with a predetermined electric potential, and a light-shielding film provided between the pixel electrode and the second capacitor electrode, be located so as to be at least partially overlapped by the transistor, and be electrically connected to the second capacitor electrode via a contact hole formed in an insulating film disposed between the second capacitor electrode and the light-shielding film.

Abstract: A low-power light-emitting device which can be manufactured in simple steps and is suitable for increasing definition and the size of a substrate is provided. The light-emitting device includes a layer for blocking visible light; a conductive layer that partly overlaps with the layer for blocking visible light; a color filter layer that includes an opening over the layer for blocking visible light; a first electrode layer for transmitting visible light that is connected to the conductive layer through the opening, over the color filter layer; an insulating partition over the first electrode layer overlapping with the opening; a layer containing an organic compound over the first electrode layer and the partition; and a second electrode layer over the layer containing an organic compound. The layer containing an organic compound includes a layer containing a donor substance and an acceptor substance and a layer containing a light-emitting organic compound.

Abstract: An array substrate for a liquid crystal display device and a fabrication method thereof, and a liquid crystal display device having the same are disclosed. The array substrate for a liquid crystal display device and a fabrication method thereof, and a liquid crystal display device having the same according to the present disclosure eliminate optical loss by use of a shielding film that can decrease the optic leakage current to minimize the optic leakage loss, thus it is possible to improve the picture quality.

Abstract: A liquid crystal display device includes an array substrate including: gate and data lines crossing each other on a first substrate to define a pixel region; a common line in parallel with the gate line; first and second common line patterns extending from the common line, wherein the data line is between the first and second common line patterns; a thin film transistor connected to the gate and data lines; a pixel electrode connected to the thin film transistor and in the pixel region; and an inorganic black matrix below the gate line, the common line, and the first and second common lines, wherein the inorganic black matrix below the first and second common lines shields the data line; an opposing substrate including a common electrode on a second substrate; and a liquid crystal layer between the array substrate and the opposing substrate.

Abstract: The present invention discloses a 3D display device and a phase retarder film thereof. The phase retarder film is used to be mounted on a liquid crystal display panel adopting a half-source driving structure and includes a plurality of phase retarder rows arranged side by side. Each phase retarder row has two wave-shaped sides, and each wave-shaped side corresponds in position to one shading row of a black matrix of the liquid crystal display panel. When the phase retarder film is mounted with a positional error, adjacent pixel electrodes in the same pixel row can have the same light-passing area relative to the phase retarder rows having wave-shaped sides so as to avoid a color washout problem.

Abstract: A liquid crystal display (LCD) device and a method fabricating the same are provided. The LCD device and the method of fabricating the same have the shielding means formed directly on the array substrate instead of the color filter substrate of the opposite substrate to the array substrate.

Abstract: An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.

Abstract: Displays such as liquid crystal displays may be provided with structures that minimize curtain mura. A display may have upper and lower polarizers. A color filter layer and a thin film transistor layer may be located between the upper and lower polarizers. A liquid crystal layer may be interposed between the color filter layer and the thin film transistor layer. A first optical film layer that includes a birefringent compensating layer may be located between the upper polarizer and the color filter layer. A second optical film layer that is devoid of birefringent compensating layers may be located between the thin film transistor layer and the lower polarizer. A grid of metal signal lines may be used to distribute signals to thin film transistors on the thin film transistor layer. A black mask may be interposed between the grid of signal lines and the thin film transistor layer.

Abstract: Disclosed is a semiconductor device in which a thin film transistor and a thin film diode are provided on one same substrate, and the characteristics respectively required for the thin film transistor and the thin film diode are achieved. Specifically disclosed is a semiconductor device that includes an insulating layer (104) formed on the surface of a substrate (101), and a thin film transistor and a thin film diode that are formed on the insulating layer (104). A portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (109) for the thin film diode, is provided with a first recessed and projected pattern (105). Meanwhile, a portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (108) for the thin film transistor, is not provided with the first recessed and projected pattern (105).

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract: To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/?m or less and off-state current at 85° C. can be 100 aA/?m or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/?m or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.

Abstract: A liquid crystal display panel is disclosed. The liquid crystal display panel includes: a first substrate with a conductive layer formed on one surface thereof; a color filter layer including a plurality of color filters formed on the conductive layer; a conductive light shielding layer formed between the plurality of color filters; a second substrate with a pixel array formed on one surface thereof; and a liquid crystal layer filled between the conductive light shielding layer and the pixel array, wherein the conductive layer is electrically short-circuited with the pixel array. Since a voltage is applied to the conductive layer formed on the front surface of the first substrate, liquid crystal molecules of the liquid crystal layer between the conductive layer and the pixel array can be prevented from being vertically aligned, thus improving liquid crystal efficiency.

Abstract: Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.

Abstract: A display device is provided. The display device includes a substrate including a pixel region, a thin film transistor formed on the substrate, a light blocking member formed at a boundary of the pixel region, and a pixel electrode formed in the pixel region, the pixel electrode connected to the thin film transistor. The display device also includes a common electrode formed on the light blocking member, the common electrode spaced apart from the pixel electrode with a microcavity interposed between the common electrode and the pixel electrode, and a roof layer comprising a color filter formed on the common electrode. The display device further includes an opening formed in the common electrode and the roof layer to expose a portion of the microcavity, a liquid crystal filling the microcavity, and an overcoat formed on the roof layer to cover the opening and seal the microcavity for each pixel region.

Abstract: In a display device, a liquid crystal capacitive element is sandwiched between a pixel electrode and an opposite electrode. The pixel electrode, one end of a first switch circuit, one end of a second switch circuit and a first terminal of a second transistor form an internal node. The other terminals of the first switch circuit and the second switch circuit are connected to a source line. The second switch circuit is a series circuit composed of a first transistor and a diode. A control terminal of the first transistor, a second terminal of the second transistor and one end of a boost capacitive element form an output node. The other end of the boost capacitive element and the control terminal of the second transistor are connected to a boost line and a reference line, respectively.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: The present invention provides a liquid crystal display panel and a liquid crystal display device presenting a reduced color addition and an improved bright room contrast. The liquid crystal display panel of the present invention includes wirings made of a metal having at least 90% reflection over a wavelength region within the visible light region, where the reflectance of the liquid crystal panel over a wavelength range of 600 to 700 nm at the display surface is no greater than 150% of the reflectance at the wavelength of 550 nm at the display surface.

Abstract: A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.

Abstract: In a liquid crystal display which includes a liquid crystal layer between a TFT substrate and a counter substrate, a gate electrode, a gate insulator and a semiconductor layer are laminated. A pixel electrode is formed on the gate insulator and metal source and drain electrodes are formed on the semiconductor layer and gate insulator. At least upper surfaces of the source and drain electrode contain Mo. One of the source and drain electrodes is directly laminated on a portion of the pixel electrode, which portion is disposed on the gate insulating film.

Abstract: A liquid crystal display device includes a substrate, a thin film transistor disposed on the substrate, a plurality of color filters disposed on the substrate, a light blocking member disposed between the plurality of color filters and on the thin film transistor, and a pixel electrode disposed on at least one of the plurality of color filters. The pixel electrode comprises a planar shape electrode and a plurality of minute branches extending from the planar shape electrode. The at least one of the plurality of color filters or the light blocking member comprises a step forming portion overlapped by the planar shape electrode.

Abstract: A liquid crystal display device may include a substrate. The liquid crystal display device may further include a pixel electrode disposed on the substrate. The liquid crystal display device may further include a common electrode overlapping the pixel electrode, wherein a liquid crystal injection hole is formed through at least the common electrode. The liquid crystal display device may further include a liquid crystal layer disposed between the pixel electrode and the common electrode. The liquid crystal display device may further include a light-blocking element disposed inside the liquid crystal injection hole.

Abstract: A liquid crystal display includes a transparent insulation substrate, a first polarizer, and a semiconductor layer, a thin film transistor, and a backlight unit. The first polarizer is disposed on the transparent insulation substrate. The first polarizer includes a light blocking film and metal wires. The semiconductor layer, disposed on the light blocking film, has a perimeter aligned with a perimeter of the light blocking film. The thin film transistor, disposed on the semiconductor layer, includes a source region and a drain region disposed in the semiconductor layer. The backlight unit, disposed under the transparent insulation substrate, provides light to the transparent insulation substrate. The blocking film reflects substantially all of the light. Gaps are disposed between the metal wires.

Abstract: With an improved light use efficiency, the light detection sensitivity of a thin film diode is increased even if the semiconductor layer of the thin film diode has a small thickness. On one side of a substrate (101), a thin film diode (130) including a first semiconductor layer (131) that has at least an n-type region (131n) and a p-type region (131p) is provided. A light-shielding layer (160) is disposed between the substrate and the first semiconductor layer. The surface of the light-shielding layer facing the first semiconductor layer has depressions and protrusions formed thereon. The surface of the first semiconductor layer facing the light-shielding layer is flatter than the surface of the light-shielding layer on which the depressions and protrusions are formed. The light that falls on the light-shielding layer is diffusely reflected and enters the first semiconductor layer.

Abstract: A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

Abstract: A liquid crystal display includes: first and second substrates; a liquid crystal layer; first and second gate lines; a data line and a voltage supplying line disposed on the first substrate; and a pixel. The pixel includes a first switching element connected to the first gate line and the data line, a second switching element connected to the first gate line and the voltage supplying line, a third switching element connected to the second gate line, a first pixel electrode connected to the first switching element, and a separate second pixel electrode connected to the second switching element. The voltage supplying line is supplied with a first voltage, which has a substantially uniform magnitude.

Abstract: An active device array substrate including a first patterned conductive layer, a dielectric layer, a second patterned conductive layer, a passivation layer and pixel electrodes is provided. The first patterned conductive layer includes scan lines, common lines, gates and strip floating shielding patterns. The dielectric layer covering the first patterned conductive layer has first contact holes which expose a portion of the common lines, respectively. The second patterned conductive layer includes data lines, sources, drains and strip capacitance electrodes. Each strip capacitance electrode is electrically connected to one of the common lines through one of the first contact holes. A gap is formed between each data line and one strip capacitance electrode, and the strip floating shielding patterns are disposed under the data lines, the gap and the strip capacitance electrodes. Each pixel electrode is electrically connected to one of the drains through one of the second contact holes.

Abstract: A liquid crystal display device includes an array substrate including: gate and data lines crossing each other on a first substrate to define a pixel region; a common line in parallel with the gate line; first and second common line patterns extending from the common line, wherein the data line is between the first and second common line patterns; a thin film transistor connected to the gate and data lines; a pixel electrode connected to the thin film transistor and in the pixel region; and an inorganic black matrix below the gate line, the common line, and the first and second common lines, wherein the inorganic black matrix below the first and second common lines shields the data line; an opposing substrate including a common electrode on a second substrate; and a liquid crystal layer between the array substrate and the opposing substrate.