Abstract: An alignment mark count acquiring method includes: acquiring a first time at which an exposure machine performs exposure of a first wafer, and acquiring a second time at which the exposure machine performs alignment of a second wafer; acquiring a first buffer time between the second time and the first time when the first time is less than the second time; determining a target alignment mark count of the second wafer according to the exposure parameters of the first wafer and the corresponding relationship when the first buffer time is greater than a preset value, wherein the corresponding relationship is the relationship between the exposure parameters and the alignment mark counts, and the corresponding relationship is used to make the first buffer time to be less than or equal to the preset value; and outputting the target alignment mark count.

Abstract: An exposure device includes a laser source, a first spatial light modulator, a second spatial light modulator and a controller. The laser source is provided for emitting a laser. The first spatial light modulator is irradiated by the laser and used for modulating the phase of the laser irradiated on the first spatial light modulator before reflecting the laser. The second spatial light modulator is irradiated by the laser reflected from the first spatial light modulator and used for modulating the amplitude of the laser irradiated on the second spatial light modulator before reflecting the laser. The laser reflected by the second spatial light modulator is irradiated on a photoresist layer to form an exposure pattern.

Abstract: Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.

Abstract: Cosmetic and dermatological compositions, including color changing compositions, are provided which typically include a plurality of synthetic particles having a size in the micrometer or nanometer range. Each synthetic particle typically includes one or more aggregates of a pigment selected from phenoxazone, phenoxazine, and a derivate or precursor thereof, and a stabilizing material which has a refractive index larger than 1.45; the aggregates having a size larger than about 100 nm and the composition being biodegradable and biocompatible.

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

Abstract: A method of manufacturing a deposition mask includes: a splitting process in which a laser beam irradiated from a light source is split into a plurality of laser beams; a scanning process in which the plurality of laser beams are simultaneously scanned onto the mask substrate; and a tuning process in which irradiation states of the plurality of laser beams are finely changed to correspond to shapes of the plurality of pattern holes while the plurality of laser beams are scanned.

Abstract: An optical apparatus, which illuminates a first area with light from a light source while the first area is longer in a second direction intersecting a first direction than in the first direction, includes a collector optical member which is arranged in an optical path between the light source and the first area, and condenses the light from the light source to form a second area in a predetermined plane, the second area being longer in a fourth direction intersecting a third direction than in the third direction; and a first fly's eye optical member which is provided within the predetermined plane including the second area, and has a plurality of first optical elements guiding the light of the collector optical member to the first area.

Abstract: This invention relates to means and processes of analysing cultural artefacts, for example to authenticate works of art or to reconstruct fragmented archaeological artefacts digitally, by first scanning the target artefact to produce a digital data model of the target artefact, which is then transformed algorithmically to obtain a target digital transform. This is analysed to identify and extract digital data minutiae from the digital transform data. Then, a number of comparator artefacts are scanned using the same scanning technologies to produce a digital data model of each comparator artefact. The same processes of algorithmic transformation and digital data minutiae extraction are applied to the comparator digital data models.

Abstract: Disclosed is a metrology apparatus for use in a lithographic manufacturing process. The metrology apparatus comprises a radiation source comprising a drive laser having an output split into a plurality of optical paths, each comprising a respective broadband light generator. The metrology apparatus further comprises illumination optics for illuminating a structure, at least one detection system for detecting scattered radiation, having been scattered by the structure and a processor for determining a parameter of interest of the structure from the scattered radiation.

Abstract: An image sensor for a position sensor apparatus for ascertaining a position of at least one mirror of a lithography apparatus includes: a plurality of integrated optical waveguides; a plurality of incoupling areas; a multiplexer apparatus; and an image reconstruction apparatus.

Abstract: A method for thermal management of reticles for conducting an exposure process includes operations. A default state of a reticle is selected based on given data, where the given data includes overlay values of a plurality of processed semiconductor workpieces and temperature profiles of the reticle correlated to the processed semiconductor workpieces. The reticle is regulated to reach the default state before using the reticle to perform the exposure process.

Abstract: The present disclosure relates to the field of display technologies and proposes a curved display panel. The curved display panel includes a first substrate provided with a first groove in a non-display area of the first substrate; a second substrate provided with a second groove in a non-display area of the second substrate, the second groove being disposed corresponding to the first groove; and a fixing spacer disposed between the first substrate and the second substrate, and having a first end located in the first groove and a second end located in the second groove.

Abstract: An exposure apparatus according to the present invention includes an illumination optical system including a first optical modulation unit having a plurality of optical modulation elements, a second optical modulation unit having a plurality of optical modulation elements, and an imaging optical system forming optical images on a predetermined plane by using lights from the first optical modulation unit and the second optical modulation unit, and a projection optical system projecting the optical image formed on the predetermined plane onto a substrate.

Abstract: A stage for supporting a semiconductor substrate is disclosed. The stage includes a platform that defines a plurality of apertures, and a plurality of burls that protrude from the apertures, where the plurality of burls have support surfaces for supporting a region of the semiconductor substrate. The stage includes an actuator coupled to at least a first burl included in the plurality of burls, wherein the actuator is operable to adjust an elevation of a first support surface of the first burl relative to the platform, and control circuitry that controls operation of the actuator to establish a substantially-planar alignment of the support surface of the first burl with a support surface of at least a second burl included in the plurality of burls.

Abstract: An exposure apparatus according to the present invention includes an illumination optical system including a first optical modulation unit having a plurality of optical modulation elements, a second optical modulation unit having a plurality of optical modulation elements, and an imaging optical system forming optical images on a predetermined plane by using lights from the first optical modulation unit and the second optical modulation unit, and a projection optical system projecting the optical image formed on the predetermined plane onto a substrate.

Abstract: A control system, of a plurality of heads, acquires grating correction information related to at least two of scales in a first grating group and scales in a second grating group, based on position information of a movable body measured using at least four heads irradiating measurement beams on at least two of the scales and scales. The grating correction information is used to control movement of the movable body using at least three heads irradiating at least two of the scales and scales.

Abstract: A method of optimizing an apparatus for multi-stage processing of product units such as wafers, the method includes: receiving object data representing one or more parameters measured across the product units and associated with different stages of processing of the product units; and determining fingerprints of variation of the object data across the product units, the fingerprints being associated with different respective stages of processing of the product units. The fingerprints may be determined by decomposing the object data into components using principal component analysis for each different respective stage; analyzing commonality of the fingerprints through the different stages to produce commonality results; and optimizing an apparatus for processing product units based on the commonality results.

Abstract: A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided in which an illumination field of the mask is illuminated by illumination radiation with an operating wavelength ? that was provided by an illumination system.

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

Abstract: A method of maintaining a set of fingerprints representing variation of one or more process parameters across wafers subjected to a device manufacturing method, the method including: receiving measurement data of one or more parameters measured on wafers; updating the set of fingerprints based on an expected evolution of the one or more process parameters; and evaluation of the updated set of fingerprints based on decomposition of the received measurement data in terms of the updated set of fingerprints. Each fingerprint may have a stored likelihood of occurrence, and the decomposition may involve: estimating, based the received measurement data, likelihoods of occurrence of the set of fingerprints in the received measurement data; and updating the stored likelihoods of occurrence based on the estimated likelihoods.

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Abstract: An information processing apparatus for acquiring an inspection condition for performing an inspection on a pattern formed by a lithography apparatus that forms a pattern on a substrate with an original includes an acquisition unit configured to acquire a second inspection condition to be applied in a case where an inspection is performed on a second pattern by inputting third information indicating a state of the lithography apparatus acquired when the second pattern is formed to a model, wherein the model is acquired by machine learning with learning data including first information indicating a state of the lithography apparatus acquired when a first pattern is formed and second information indicating a first inspection condition applied when an inspection is performed on the first pattern.

Abstract: Changing a prescription of a contact lens includes analyzing vision-related data regarding a user (e.g., eye measurements and/or contextual information) to determine a currently needed contact lens prescription, resulting in a determined contact lens prescription; and adjusting a contact lens prescription of a contact lens embedded in the user's eye based on the determined contact lens prescription.

Abstract: Disclosed herein are display techniques that will allow sensitive data displayed on a computer screen to only be viewed by authorized users and will render computer screen unreadable to unauthorized users. One or more display techniques are capable of automatically scrambling and unscrambling display screen of the computing device in which only an intended viewer is able to view data on the display screen using deciphering glasses.

Abstract: A method of determining a configuration of a projection system for a lithographic apparatus as an implementation of a quadratic programming problem with a penalty function. The method includes: receiving dependencies of one or more optical properties of the projection system on a configuration of a plurality of manipulators of the projection system; receiving a plurality of constraints which correspond to physical constraints of the manipulators; finding an initial configuration of the manipulators; and iteratively finding an output configuration of the manipulators. The iteration includes repeating the following steps: determining a set of the plurality of constraints that are violated; determining an updated configuration of the manipulators, the updated configuration of the manipulators being dependent on the set of the plurality of constraints that are violated and a penalty strength; and increasing the penalty strength. These steps are repeated until a convergence criterion is met.

Abstract: An exposure apparatus includes a projection optical system configured to project, onto a substrate, exposure light for forming a pattern on the substrate; a light shielding member having an opening for allowing light reflected by the substrate to pass therethrough and a light receiving element configured to receive a light flux passing through the opening after being reflected by the substrate; and a control unit configured to perform focus control for changing a defocus amount representing a positional deviation between a condensed position of the exposure light and the substrate in accordance with the amount of light received by the light receiving element. The light shielding member is disposed at a position that is optically conjugate to the substrate in an in-focus state where the defocus is smaller than a predetermined amount.

Abstract: Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.

Abstract: In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.

Abstract: A control apparatus controls at least one manipulator for modifying a parameter of a microlithographic projection exposure apparatus by generating a target for a travel variable, which defines a modification of the parameter to be undertaken via the manipulator. The control apparatus is configured to generate the target from a state characterization of the projection exposure apparatus by optimizing a merit function. A merit function includes at least one penalty term for taking account of a limit for a property of the projection exposure apparatus as an implicit constraint and the penalty term is formulated in such a way that the function value thereof tends to “infinity” as the property approaches the limit.

Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

Abstract: An overlay error measurement structure includes a lower-layer pattern disposed over a substrate, and an upper-layer pattern disposed over the lower-layer pattern and at least partially overlapping with the lower-layer pattern. The lower-layer pattern includes a plurality of first sub-patterns extending in a first direction and being arranged in a second direction crossing the first direction. The upper-layer pattern includes a plurality of second sub-patterns extending in the first direction and being arranged in the second direction. At least one of a pattern pitch and a pattern width of at least one of at least a part of the first sub-patterns and at least a part of the second sub-patterns varies along the second direction.

Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.

Abstract: An inspection system may include an optical component configured to deliver inspection light to a subject and a detector configured to obtain an image of the subject based on the inspection light delivered to the subject. The inspection system may also include a processor in communication with the optical component and the detector. The processor may be configured to: measure an aberration of the optical component based on the image of the subject obtained by the detector; and adjust the optical component to compensate for a change in the aberration.

Abstract: A method is provided. The method includes steps as follows. EUV light is generated. A collector is used to gather the EUV light onto a first optical reflector. The first optical reflector is used to reflect the EUV light to a reticle, so as to impart the EUV light with a pattern. A second optical reflector is used to reflect the EUV light with the pattern onto a wafer. The first optical reflector is rotated.

Abstract: A control system, of a plurality of heads, acquires grating correction information related to at least two of scales in a first grating group and scales in a second grating group, based on position information of a movable body measured using at least four heads irradiating measurement beams on at least two of the scales and scales. The grating correction information is used to control movement of the movable body using at least three heads irradiating at least two of the scales and scales.

Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Abstract: A method of reducing effects of reticle heating and/or cooling in a lithographic process, the method including calibrating a linear time invariant reticle heating model using a system identification method; predicting distortions of the reticle using the reticle heating model and inputs in the lithographic process; and calculating and applying a correction in the lithographic process on the basis of the predicted distortions of the reticle.

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus.

Abstract: An exposure apparatus is provided. The exposure apparatus includes a stage for a wafer, a first light source generating a first light beam, an exposure optical system to receive the first light beam and to direct the first light beam as an exposure light beam onto an exposure area in a field of the wafer, and a heating unit including a second light source, which generates second light, and heating the exposure area by applying the second light to the exposure area.

Abstract: An illumination system of a microlithographic projection apparatus includes a spatial light modulator having a modulation surface including a plurality of micromirrors. Each micromirror includes a mirror surface having an orientation that can be changed individually for each micromirror. For at least one of the micromirrors, at least one parameter that is related to the mirror surface is measured. The orientation of the mirror surfaces is controlled depending on the at least one measured parameter. A light pattern is produced on the modulation surface, and an image of the light pattern is formed on an optical integrator that has a plurality of light entrance facets. Images of the light entrance facets are superimposed on a mask.

Abstract: A projection device includes a detection unit configured to detect a specific object, a projection unit configured to project a projection image indicated by a video signal, a drive unit configured to change the direction of the projection unit so as to change a projection position of the projection image, and a controller configured to control the drive unit. The controller controls the drive unit such that the drive unit performs a first control in which the projection image is projected at a position following the motion of the specific object detected by the detection unit and a second control in which the projection position of the projection image is changed according to the video signal.

Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: computing a multi-variable cost function, the multi-variable cost function being a function a plurality of design variables that represent characteristics of the lithographic process; and reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables until a certain termination condition is satisfied; wherein a bandwidth of a radiation source of the lithographic apparatus is allowed to change during the reconfiguration.

Abstract: An apparatus and method for modelling a random process using reduced length least-squares autoregressive parameter estimation is herein disclosed. The apparatus includes an autocorrelation processor, configured to generate or estimate autocorrelations of length m for a stochastic process, where m is an integer; and a least-squares (LS) estimation processor connected to the autocorrelation processor and configured to model the stochastic process by estimating pth order autoregressive (AR) parameters using LS regression, where p is an integer much less than m. The method includes generating, by an autocorrelation processor, autocorrelations of length m for a stochastic process, where m is an integer; and modelling the stochastic process, by a least-squares estimation processor, by estimating pth order autoregressive (AR) parameters by least-squares (LS) regression, where p is an integer much less than m.

Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

Abstract: An assembly is disclosed, which comprises a light fixture comprising a light source thereon; an image capturing device mounted adjacent with the light source; and a housing covering the image capturing device, wherein the housing has a window within a field of view of the image capturing device; wherein at least a portion of the window serving as working optical surface of the image capturing device is located within a shadow of direct light from the light source of the light fixture.

Abstract: A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

Abstract: The zoom control apparatus configured to control an angle of view. The apparatus includes a motion acquirer configured to acquire a motion amount of an image capturing optical system, a calculator configured to calculate a displacement amount of a main object image in a captured image by using the motion amount of the image capturing optical system, a determiner configured to determine whether or not the displacement amount of the main object image is larger than a first threshold, and a controller configured to perform, when the displacement amount of the main object image is larger than the first threshold, control for making the angle of view wider than that for when the displacement amount of the main object image is smaller than the first threshold.