Using Diffraction Of Light (go1p 3/36c) Patents (Class 356/957)
  • Patent number: 7135259
    Abstract: A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.
    Type: Grant
    Filed: May 28, 2003
    Date of Patent: November 14, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Li-Jui Chen, Chih-Ming Ke, Bang-Ching Ho, Jen-Chieh Shih, Tsai-Sheng Gau