Laminated Patents (Class 360/125.39)
  • Patent number: 11114338
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to fully aligned via structures and methods of manufacture. The structure includes: a plurality of minimum ground rule conductive structures formed in a dielectric material each of which comprises a recessed conductive material therein; at least one conductive structure formed in the dielectric material which is wider than the plurality of minimum ground rule conductive structures; an etch stop layer over a surface of the dielectric layer with openings to expose the conductive material of the least one conductive structure and the recessed conductive material of a selected minimum ground rule conductive structure; and an upper conductive material fully aligned with and in direct electrical contact with the at least one conductive structure and the selected minimum ground rule conductive structure, through the openings of the etch stop layer.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: September 7, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Nicholas V. Licausi, Xunyuan Zhang
  • Patent number: 10811177
    Abstract: A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 20, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bruce B. Doris, Hariklia Deligianni, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 10784045
    Abstract: A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: September 22, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, William J. Gallagher, Sathana Kitayaporn, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Joonah Yoon
  • Patent number: 7675708
    Abstract: A thin-film magnetic head substrate includes a ceramic base, an undercoat film of an aluminum oxide, and an intermediate layer, which is sandwiched between the ceramic base and the undercoat film and which is made of a material other than the aluminum oxide and an Al—Ti—O compound.
    Type: Grant
    Filed: July 7, 2004
    Date of Patent: March 9, 2010
    Assignee: Hitachi Metals, Ltd.
    Inventor: Hironobu Tsubota
  • Patent number: 7649677
    Abstract: A subwavelength aperture includes a plurality of ridges that project from an aperture sidewall into the aperture opening. The ridges may be closely spaced such that the hot spots associated with the ridges are likewise closely spaced and create an elongated hot spot. The subwavelength aperture of the present invention may be adapted for use in a magnetic head of a hard disk drive for improved thermally assisted recording (TAR) of magnetic data bits. Such a magnetic head may include an optical resonant cavity that is fabricated within the magnetic head structure.
    Type: Grant
    Filed: April 4, 2006
    Date of Patent: January 19, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xuhui Jin, Chie Ching Poon, Timothy Carl Strand, Henry Hung Yang