Abstract: A standardized hot-pluggable transceiving unit comprising a housing, a board and a chipset. The housing has specific standardized dimensions and is adapted to being inserted into a chassis of a hosting unit. The board and chipset are in the housing. The board comprises at least two electro-mechanical components. The chipset also comprises at least two electro-mechanical components. Each electro-mechanical component of the chipset collaborates with a corresponding electro-mechanical component of the board for simultaneously providing a mechanical anchor and an electrical connection between the chipset and the board. The chipset further comprises a programmable processing component for processing a signal transmitted by the board via the electrical connection between the board and the chipset. For instance, the programmable processing component of the chipset comprises a coding module for encoding or decoding data having a first form into data having a second form.

Abstract: A system comprising a solid state lattice containing an electronic spin coupled to a nuclear spin; an optical excitation configuration which is arranged to generate first optical radiation to excite the electronic spin to emit output optical radiation without decoupling the electronic and nuclear spins; wherein the optical excitation configuration is further arranged to generate second optical radiation of higher power than the first optical radiation to decouple the electronic spin from the nuclear spin thereby increasing coherence time of the nuclear spin; a first pulse source configured to generate radio frequency (RF) excitation pulse sequences to manipulate the nuclear spin and to dynamically decouple the nuclear spin from one or more spin impurities in the solid state lattice so as to further increase the coherence time of the nuclear spin; a second pulse source configured to generate microwave excitation pulse sequences to manipulate the electronic spin causing a change in intensity of the output optic

Abstract: A memory device to which an electron beam is irradiated to store data therein is provided. The memory device includes a plurality of floating electrodes that store data through irradiation of the electron beam thereto, a charge amount detecting section that detects data stored in each of the floating electrodes based on a charge amount accumulated in each of the floating electrode.

Abstract: A recording system for magnetic storage devices, including a beam column for generating a beam, a platform for moving a magnetic storage medium relative to the beam, and a signal generator for sequentially, or in a continuously alternating manner, deflecting the beam. In turn, the beam is directed according to displacement of dots on the extent of the magnetic storage medium such that dots of a plurality of dot groupings can be written to on the extent during a single pass of the beam column above the extent.

Abstract: Embodiments of the present invention include systems and methods for three-terminal field-emitter triode devices, and memory arrays utilizing the same. In other embodiments, the field-emitter devices include a volume-change material, capable of changing a measurable electrical property of the devices, and/or three-dimensional memory arrays of the same.

Abstract: Apparatus, systems and methods for implementing molecular quantum memory are disclosed. In one implementation, a source of polarized electrons and a source of oppositely polarized electrons may be selectively coupled to at least one probe tip of a probe assembly. The at least one probe tip may, in turn, be electrically coupled to a molecule so that information may be written to the molecule using a time-varying polarized electron current selectively derived from the polarized electron current sources.

Abstract: The scale of the devices in a diode array storage device, and their cost, are reduced by changing the semiconductor based diodes in the storage array to cold cathode, field emitter based devices. The field emitters and a field emitter array may be fabricated utilizing a topography-based lithographic technique.

Abstract: A ballistic memory cell structure employing ballistic transistor technology for switching between a read state and a store state is disclosed. The memory cell structure includes substrate structures forming a side wall and a main chamber for defining a linear ballistic channel between the two. The main chamber is formed to include a deflection channel with deflective surfaces to deflect an electron emitted from an electron source into the memory cell structure. Deflection controllers are coupled to the substrate structures for generating biasing fields that adjust the trajectory of electrons flowing through the linear ballistic channel and the deflection channel. Logic output terminals are positioned beyond channel exits for registering exiting electrons and determining a read or store state.

Abstract: To greatly increase the storage density of a storage apparatus, an electron beam E emitted from a cold cathode 101 is accelerated by an accelerating electrode 102, caused to converge by a convergence electrode 103, deflected by a deflection electrode 104 and applied to a minute region of a storage film 105. The storage film 105 includes, for example, a phase change film 105a. The film is rapidly heated and cooled to change into an amorphous state upon irradiation with an electron beam E with high energy, while being gradually cooled to change into a crystallized state upon irradiation with an electron beam E with approximately intermediate energy, thereby storing data. Upon irradiation with an electron beam E with low energy, the potential difference between a detection electrode 105b and an anode 105c is detected depending on the state, i.e., the amorphous or crystallized state, thereby reading stored data.

Abstract: A system for writing data using an electron beam to change the structure of a small section of a storage medium and includes at least one focused electron beam source. The duration of a write cycle of the focused electron beam source is controlled at least in part on an estimated or measured amount of charge transmitted by the focused electron beam source to the storage medium during the write cycle.

Abstract: Techniques for reconfiguring spectral features stored in a medium based on a two-state atomic system with transition dipole moment ? includes causing a chirp to pass into the medium. The chirp includes a monochromatic frequency that varies in time by a chirp rate ? over a frequency band BR during a time interval TR. The amplitude AR of the chirp is constant over BR and equal to AR=(hbar/??)?{square root over ((? ln [2/?]))}, The term hbar is reduced Plank's constant, ln is a natural logarithm function, and ? is a ratio of a circumference of a circle to a diameter of the circle. For ?<<1, the atomic-state populations in the two states are inverted. For ?=1, prior atomic-state populations are erased, with final populations equal in the two states, regardless of populations before erasure.

Abstract: An improved high-density digital storage device uses placement of mobile ions within a memory layer to record digital data. In an embodiment of the invention, the mobile ions comprise sodium ions or other alkali metal ions implanted in a silicon oxide memory layer. In a further embodiment of the invention, a scanning nanotip array is used to position the mobile ions via an electric field as well as to read the positions of the mobile ions. In a further embodiment of the invention, a grid-addressable array of transistors is used to provide scanning tips.

Abstract: Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P-N junctions, and being associated with a change in data bit memory state.

Abstract: A micro-electro-mechanical device includes a moveable mass supported within a frame. To support the mass within the frame, a first flexure extends between the mass and the frame. An angle softening element is positioned between a first end of the first flexure and the frame to allow angular movement of the first flexure.

Abstract: A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.

Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.

Abstract: This invention relates to the controlled two-dimensional structural transition of a dipole monolayer at a metal, semi-conducting or insulating interface. The dipole monolayer consists of objects/molecules with a permanent electric dipole moment. A transition between the structures of the molecular layer can be performed locally and reversibly by applying an electrical field and the structures/patterns can be reversibly switched many times between two different structures/states. Both of the two structures, the ordered and the disordered structures, are intrinsically stable without the presence of the switching electrical field. This controlled switch of the local layer structure can be used to change layer properties (i.e., mechanical, electrical, optical properties). The controlled reversible modifications of the dipole monolayer structures are usable as bit assignments in data storage applications for example.

Abstract: The present invention provides a system and method for detecting and repairing defects in semiconductor devices. According to the invention, defects are located using a scanning probe microscope, such as an atomic force microscope or a scanning tunneling microscope, and repaired at locations determined by the scanning probe microscope. The microscope itself, and in particular the detection tip, may be employed to remove the defects. For example, the tip may be used to machine away the defect, to apply an electric field to oxidize the defect, and/or to heat the defect causing it to burn or vaporize. By combining precise defect location capabilities of a scanning probe microscope with defect removal, the invention permits very precise correction of defects such as excess material and foreign particles on semiconductor substrates.

Abstract: A semiconductor memory module comprising an atomic resolution storage memory, a magnetic memory, and a memory controller. The memory controller is configured to move data between the memory controller and the atomic resolution storage memory and configured to move data between the memory controller and the magnetic memory.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: Modules and processor-based systems are provided. One such module comprises: a first wafer having a storage medium, the storage medium having a plurality of storage areas, each of the storage areas being configurable in one of a plurality of structural states to represent information stored in the storage area; a second wafer arranged proximate the first wafer, the second wafer having a plurality of electron beam emitters configured to electrically communicate with the storage medium, said storage medium and said plurality of emitters being configured to move relative to each other such that each emitter may provide a beam of electrons to at least one of the storage areas of the storage medium, and logic circuitry configured to enable extraction of data from the storage areas of the storage medium and execution of instructions embodied within the data.

Abstract: An electron beam emitting apparatus has a first plate with an electron-emitting device 15, and an electrode 8 opposed to the first plate, and the electrode 8 is applied a potential to accelerate electrons emitted from the electron-emitting device 15. In the electron beam emitting apparatus, a potential defining region 9 is provided a surface of the first plate on the electrode 8 side and a first potential defining region forming the potential defining region 9 is provided in a projective area of the electrode 8 onto the potential defining region 9; and, where d represents a distance between the electrode 8 and the potential defining region 9, an additional potential defining region is defined in the range of 0.83d in all directions parallel to the first plate from the edge of the projective area of the electrode 8 onto the potential defining region 9. This stabilizes trajectories of electrons and permits an excellent image to be formed without deviation of light emission positions.

Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.

Abstract: Systems for assembling wafer stacks are provided. An embodiment of the system includes a vacuum chamber, a media deposition component and a wafer stack assembly component. The media deposition component is arranged within the vacuum chamber and is configured to deposit storage media upon a first wafer. The wafer stack assembly component also is arranged within the vacuum chamber. The wafer stack assembly component is configured to align the first wafer and a second wafer relative to each other and bond the first wafer and the second wafer together while at least a portion of the vacuum chamber is maintained under vacuum pressure. So configured, the interior chamber of the wafer stack can be formed as well as maintained under vacuum pressure. Methods also are provided.

Abstract: A redundant array of independent storage devices is disclosed herein. The redundant storage device includes one or more atomic resolution storage devices and a control system. The atomic resolution storage device is configured to communicate with the control system as a redundant array of independent storage devices. Each atomic resolution storage device is a non-volatile memory component including a plurality of electron emitters, a medium having medium partitions, and a plurality of micromovers wherein each micromover is independently operable to move a medium partition relative to one or more electron emitters for redundant reading and writing of data at the media.

Abstract: The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.

Abstract: Storing a data bit includes exposing a volume of a polymer, having a first conductivity, to an electron beam. Exposing damages cross-links in the volume of material. A first conductivity of the polymer is changed to a second conductivity and the data is stored in the bit.

Abstract: Storing a data bit includes exposing a volume of a polymer, having a first conductivity, to an electron beam. Exposing damages cross-links in the volume of material. A first conductivity of the polymer is changed to a second conductivity and the data is stored in the bit.

Abstract: A preferred microprocessor module includes a first wafer incorporating a storage medium. The storage medium is provided with storage areas that are configurable in one of a plurality of structural states to represent information stored in the storage areas. A second wafer is arranged proximate the first wafer and includes electron beam emitters that are configured to electrically communicate with the storage medium. The storage medium and the emitters are configured to move relative to each other so that each emitter may provide a beam of electrons to at least one of the storage areas. Additionally, a third wafer is provided which includes logic circuitry configured to enable extraction of data from the storage areas of the storage medium and execution of instructions embodied within the data. Processor-based systems also are provided.

Abstract: Systems for assembling wafer stacks are provided. An embodiment of the system includes a vacuum chamber, a media deposition component and a wafer stack assembly component. The media deposition component is arranged within the vacuum chamber and is configured to deposit storage media upon a first wafer. The wafer stack assembly component also is arranged within the vacuum chamber. The wafer stack assembly component is configured to align the first wafer and a second wafer relative to each other and bond the first wafer and the second wafer together while at least a portion of the vacuum chamber is maintained under vacuum pressure. So configured, the interior chamber of the wafer stack can be formed as well as maintained under vacuum pressure. Methods also are provided.

Abstract: A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct electrical contact without substantial risk of damage to either the scanning probe or the molecular recording medium. In this way, the invention avoids the high emission currents, which may damage the probe electrode or the recording media, or both, and avoids other difficulties often associated molecular memory systems with non-contacting probe electrodes.

Abstract: Storing a data bit includes exposing a volume of a polymer, having a first conductivity, to an electron beam. Exposing damages cross-links in the volume of material. A first conductivity of the polymer is changed to a second conductivity and the data is stored in the bit.

Abstract: Storing a data bit includes exposing a volume of a polymer, having a first conductivity, to an electron beam. Exposing damages cross-links in the volume of material. A first conductivity of the polymer is changed to a second conductivity and the data is stored in the bit.

Abstract: A preferred microprocessor module includes a first wafer incorporating a storage medium. The storage medium is provided with storage areas that are configurable in one of a plurality of structural states to represent information stored in the storage areas. A second wafer is arranged proximate the first wafer and includes electron beam emitters that are configured to electrically communicate with the storage medium. The storage medium and the emitters are configured to move relative to each other so that each emitter may provide a beam of electrons to at least one of the storage areas. Additionally, a third wafer is provided which includes logic circuitry configured to enable extraction of data from the storage areas of the storage medium and execution of instructions embodied within the data. Processor-based systems also are provided.

Abstract: A system for writing data to and reading data from a magnetic medium utilizing a spin polarized electron beam.

Abstract: A beam index type cathode ray tube for preventing distortion of index signals due to high frequency noises by protecting an optical detector and an index circuit part from the influence of high frequencies which are generated during the operation of the cathode ray tube, which includes a phosphor screen formed on an inner surface of a panel and having index stripes, an electron gun for emitting electron beams toward the phosphor screen, index light incident part formed on outer peripheral surfaces of respective light receiving windows of a funnel to be provided with the index light signals emitted from the index stripes via the respective light receiving window, optical cables respectively connected to the index optical incident parts for transmitting optical signals, an optical detector converting the optical signals provided from the optical cables to index current signals, an index circuit part synchronizing the index current signals with a color switching signal so as to transmit a precise color switching

Abstract: A method of storing information on a material (preferably a shape memory alloy), including the step of heating a plurality of crystals of said material in order to effect a structural change in each said crystal, wherein the information stored on said material is encoded in the arrangement of changed and unchanged crystals. Preferably the structural change is a geometrical change in the crystals such as from rhomboidal to body-centered cubic. A method of reading information from such a material is provided, including the steps of scanning the surface of the material using an electron beam or a laser, analyzing the reflected electron beam or laser light, and decoding the information.

Abstract: A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer have tunnel coupling that exhibits a nonlinear current-voltage characteristic. The quantum dots in the upper layer receive an input of initial data/bias current, and each quantum dot in the upper layer is coupled with one quantum dot in the lower layer via a gate function having a time constant. Adjacent quantum dots in the lower layer do not interact with each other and the quantum dots in the lower layer are connected to the ground. For example, initial data are input by generating electron-hole pairs by applying light having an intensity profile corresponding to data, and injecting resulting electrons into the quantum dots of the upper layer.

Abstract: A system for storing data on a magnetic medium using spin polarized electron beams is provided. The system includes a source of spin polarized electrons and a storage medium disposed a selected distance from the source. The storage medium has a plurality of storage locations, each of which includes a layer of magnetic material sandwiched between first and second layers of a half-metallic material. The resulting sandwich structure forms a spin dependent electron trap that increases coupling between beam electrons in a first spin state and target electrons in a second spin state. An electron optics system directs the source of spin polarized electrons to one of the plurality of storage locations.

Abstract: A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value.

Abstract: A preferred data storage system includes a memory storage device that incorporates a storage medium and electron beam emitters which are configured to electrically communicate with the storage medium. The storage medium and the emitters are configured to move relative to each other so that each emitter may provide a beam of electrons within a respective coverage area of the storage medium. Each coverage area includes at least one storage area which is configurable in at least two structural states, which represent information stored in the storage areas. A data recovery system also is provided which is communicatively coupled with the memory storage device. The data recovery system is configured to determine whether a first emitter of the memory storage device has failed and to recover information stored in at least one of the storage areas of the first emitter with a second emitter of the memory storage device. Computer readable media and methods also are provided.

Abstract: A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value.

Abstract: A system for storing data on a magnetic medium using spin polarized electron beams is provided. The system includes a source of spin polarized electrons and a storage medium disposed a selected distance from the source. The storage medium has a plurality of storage locations, each of which includes a layer of a first non-magnetic material, a layer of magnetic material deposited on the first non-magnetic material, and layer of a second non-magnetic material deposited on the magnetic material. The second material is included to scatter spin polarized electrons from the source into an interaction volume of the magnetic material. An electron optics system directs the source of spin polarized electrons to one of the plurality of storage locations.

Abstract: A digital memory element having three miniaturized electron tubes, which is faster and smaller by at least one further order of magnitude than known digital memory elements, can be produced through conventional and additive lithography. The digital memory element is a small memory capacitor linked to the anode of a write-in tube, to the cathode of an erase tube, and to a deflection element of a read-out tube which deflects an electron beam, in dependence upon the charge state, to one of two detectors.

Abstract: Disclosed is an organic thin film device having an organic thin film consisting of a mixed-stacked charge-transfer complex, wherein the organic thin film contains n species of donor molecule D.sub.1 . . . D.sub.n and m species of acceptor molecule A.sub.1 . . . A.sub.m and forms mixed crystal represented by (D.sub.1).sub.x1 . . . (D.sub.n).sub.xn -(A.sub.1).sub.y1 . . . (A.sub.m).sub.ym and the combinations of a donor molecule and an acceptor molecule consist of a group forming ionic complex crystal and a group forming neutral complex crystal.

Abstract: A method and apparatus for precision machining a surface suitable for use as a data recorder, using a scanning probe microscope (SPM) capable of observing an electrically insulating surface. The SPM includes a probe which comprises a tip having a pointed end, and also including a conductive layer applied on a surface of the tip. The tip is brought into close proximity to the surface which is to be machined and a machining voltage is applied between the tip and the surface to machine the surface.

Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field.

Abstract: A device for optically storing and retrieving information incorporating a cadmium fluoride crystal. Using focused ionizing radiation, patterns can be formed in the crystal by the creation of color centers and/or intrinsic luminescence quenched areas. The stored information can then be retrieved by irradiating the crystal with visible light, ultraviolet light, ionizing radiation or combinations thereof. The device and the storage technique allows the storage of various different levels of information, the different levels being retrievable by using different irradiating media and magnifications of the retrieved information. The device and technique also allows the information to be stored for a predetermined period of time.

Abstract: A highly reliable memory device with excellent heat resistance that can be used in any environment utilizes a chemical change to define a state transition. The memory device includes a micro vacuum tube structure having a recess portion formed on an upper face of a quartz substrate, a cold cathode having many comb-tooth like tips extending from the quartz substrate over to one side of the recess portion, a rectangular control electrode disposed on the side of the cold cathode at the bottom of the recess portion, an anode extending from the quartz substrate over to the other side of the recess portion and facing opposed to the cold cathode, and a sealing member for vacuum sealing a space inside the recess portion 11a. N.sub.2 and O.sub.2 gases are enclosed in a space under the pressure of 0.2 mmHg. By changing the control electrode voltage, energy of accelerated electrons is changed: NO is produced at the control voltage of 17 eV, NO2 at 23 eV and the product gases dissociate to N.sub.2 and O.sub.

Abstract: A distance-controlled tunneling transducer comprises a plurality of tunnel tips arranged in an array at a tunneling distance from an electrically conductive surface of a storage medium. Each tip is attached to a respective cantilever beam permitting the distance between each tip and the surface to be individually pre-adjusted electrostatically. Arranged in juxtaposition with each cantilever beam is an active control circuit for adjusting the tip-to-surface distance during operation of the storage unit, thus preventing crashes of the associated tip into possible asperities on the surface of the recording medium. Each control circuit is designed such that its operating voltage concurrently serves to pre-adjust its associated cantilever beam and to maintain the tip-to-surface distance essentially constant.