Abstract: A system includes a resistive random access memory cell and a driver circuit. The resistive random access memory cell includes a resistive element and a switching element, and has a first terminal connected to a bit line and a second terminal connected to a word line. The driver circuit is configured to apply, in response to selection of the resistive random access memory cell using the word line, a first voltage of a first polarity to the bit line to program the resistive random access memory cell to a first state by causing current to flow through the resistive element in a first direction, and a second voltage of a second polarity to the bit line to program the resistive random access memory cell to a second state by causing current to flow through the resistive element in a second direction.

Abstract: A finger-mounted data entry device that allows a user to enter information into a computing device without using a keyboard and a method of using the data entry device. The data entry device includes thumb contacts and finger contacts. The thumb contacts are positioned on the user's thumbs such that the thumb contacts represent rows of keys on a standard keyboard: a first thumb contact representing a base row of keys; a second thumb contact representing an upper row of keys; and a third thumb contact representing a lower row of keys.

Abstract: A multilevel sense circuit includes a memory MOSFET having one of at least two different current carrying states and a pair of reference MOSFETs one of which has one of the two current carrying states and the other of which has the other current carrying state. A first current supplying circuit is connected to the memory MOSFET for supplying a predetermined amount of current thereto when the memory MOSFET is activated. A second current supplying circuit is connected to the pair of reference MOSFETs and also to the first current supplying circuit, such that twice the aforementioned predetermined amount of current is supplied to the pair of reference MOSFETs when the memory MOSFET is activated. A multilevel semiconductor memory device includes a MOSFET having a channel whose width is varyingly set by providing a non-inverting region in a selected area of the channel by ion implantation.

Abstract: A device derived from a bulk semiconductor component called "Gunn-effect triode"; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element with such a device consists of a "writing arm" with a semiconductor band of Ga As organized into a Gunn-effect triode and a "reading arm" which is a similar band of Ga As having two electrodes instead of three i.e. an anode and a cathode. The two bands are connected by a bridge of Ga As. The travelling domain triggered by a digital signal is propagated by a lateral extension across the bridge from the writing arm to the reading arm. An n-bit register is carried out by arranging a series of register elements in such a manner that the gate of the first band of the first element forms the input terminal of the register and the cathode of the second band of the first element is connected to the gate of the first band of the second element and so on up to the second band of the n.sup.