Abstract: A memory device that, in certain embodiments, includes a memory element and a digital filter. The digital filter may include a counter and a divider, where the divider is configured to divide a count from the counter by a divisor.

Abstract: Circuitry and a method for indicating a multiple-type memory is disclosed. The multiple-type memory includes memory blocks in communication with control logic blocks. The memory blocks and the control logic blocks are configured to emulate a plurality of memory types. The memory blocks can be configured into a plurality of vertically stacked memory planes. The vertically stacked memory planes may be used to increase data storage density and/or the number of memory types that can be emulated by the multiple-type memory. Each memory plane can emulate one or more memory types. The control logic blocks can be formed in a substrate (e.g., a silicon substrate including CMOS circuitry) and the memory blocks or the plurality of memory planes can be positioned over the substrate and in communication with the control logic blocks. The multiple-type memory may be non-volatile so that stored data is retained in the absence of power.

Abstract: A data storage system includes a first circuit board, a plurality of sockets coupled to the first circuit board, an connector coupled to each of the sockets for coupling each of the sockets to external circuitry, and a plurality of memory modules, each memory module disposed within one of the sockets. The memory module includes a circuit board, an integrated circuit device having configurable blocks, DRAM devices that form parallel channels of DRAM memory and flash memory devices that form parallel channels of flash memory. The memory module also includes an interface electrically coupled to the integrated circuit device for coupling input and output between the integrated circuit device and external circuitry.

Abstract: A system is disclosed that includes a content addressable memory and an input register coupled to the content addressable memory. The input register can store a data word and the content addressable memory determines if the data word exists in the content addressable memory. The system also includes a power control circuit coupled to the content addressable memory for selectively providing power to at least a portion of the content addressable memory. The system includes power control logic coupled to the power control circuit to selectively reduce power to the at least a portion of the content addressable memory when valid data does not exist in the at least a portion of the content addressable memory.

Abstract: Memory storage requirements for digital signal processing operations, for example, motion-compensated video scan rate conversion, that produce intermediate output data, which is then used as an input to the operation, are reduced by reordering operations and organizing memory allocations in a special manner to allow intermediate output at a particular execution time, to substantially share the same memory space as the intermediate output of a previous execution time. Such a reduction in the amount of memory required for processing operations advantageously reduces cost and power consumption.

Abstract: A memory module includes a memory device having a plurality of data pins and conductive lines electrically connected to the plurality of data pins. The memory device is configurable, using at least one input to the memory device, to a data pin configuration selected from among a plurality of different data pin configurations. The plurality of different data pin configurations include a first data pin configuration that uses a first number of data pins of the memory device, and a second data pin configuration that uses a second, different number of data pins.

Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to a managed hybrid memory that includes a power supply.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor substrate, a plurality of first element isolation insulating films formed on a surface of the semiconductor substrate corresponding to a first cell array region into a band shape, a plurality of second element isolation insulating films formed on a surface of the semiconductor substrate corresponding to a second cell array region into a band shape. Each first element isolation insulating film has a level from a surface of the semiconductor substrate, the first charge storage layer has a level from the surface of the semiconductor substrate, and each second element isolation insulating film has a level from the surface of the semiconductor substrate, the level of each first element isolation insulating film being lower than the level of the first charge storage layer and higher than the level of each second element isolation insulating film.

Abstract: A nonvolatile memory apparatus includes a memory device including a configuration information storage block for storing configuration data groups. A configuration information processing circuit is configured to determine majorities of configuration data groups, which are outputted from the memory device during a first period as an initial stage of a power-up operation, under the control of a first control clock signal. The configuration information processing circuit is also configured to determine majorities of configuration data groups, which are outputted from the memory device during a second period after the first period, under the control of a second control clock signal having a cycle shorter than the first control clock signal.

Abstract: A nonvolatile memory apparatus includes a memory device having a configuration information storage block for storing a first configuration data group and a second configuration data group having fewer bits than the first configuration data group and a configuration information processing circuit configured to determine a majority of the first configuration data group outputted from the memory device, during a first period of a power-up operation, and determine a majority of the second configuration data group outputted from the memory device, during a second period after the first period.

Abstract: A combination memory device including a static random access memory (SRAM) and a read only memory (ROM) comprises first memory cells and second memory cells arranged in rows and columns, in which each of the first memory cells includes an SRAM cell and a ROM cell and is arranged adjacent to at least one of the second memory cells, and each of the second memory cells includes an SRAM cell and does not include a ROM cell.

Abstract: A method for accessing a content addressable memory (CAM) system having a CAM and random access memory (RAM) includes providing comparand data to the CAM, comparing the comparand data to entries of the CAM to determine a matching CAM entry and asserting a match signal corresponding to the matching CAM entry. In response to asserting the match signal, the method further includes providing output data, an output parity bit, and an output complement parity bit from the RAM, using the comparand data to generate a generated parity bit, and providing an error indicator based on the generated parity bit, the output parity bit, and the output complement parity bit. The error indicator may indicate an error when the generated parity bit is not equal to the output parity bit or when the output parity bit is equal to the output complement parity bit.

Abstract: A memory cell has at least two word lines and at least two bit lines. The cell also has a first select device being connected to at least one word line and one bit line and a gate capacitor element connected to at least one word line and the first select device. The cell also has a sense device being connected in series to the gate capacitor element and the first select device. The sense device is connected to at least two bit lines.

Abstract: Circuitry and a method for indicating a multiple-type memory is disclosed. The multiple-type memory includes memory blocks in communication with control logic blocks. The memory blocks and the control logic blocks are configured to emulate a plurality of memory types. The memory blocks can be configured into a plurality of vertically stacked memory planes. The vertically stacked memory planes may be used to increase data storage density and/or the number of memory types that can be emulated by the multiple-type memory. Each memory plane can emulate one or more memory types. The control logic blocks can be formed in a substrate (e.g., a silicon substrate including CMOS circuitry) and the memory blocks or the plurality of memory planes can be positioned over the substrate and in communication with the control logic blocks. The multiple-type memory may be non-volatile so that stored data is retained in the absence of power.

Abstract: A variable resistance memory device may include a first array of first variable resistance memory cells and a second array of second variable resistance memory cells on an integrated circuit chip. Each of the first variable resistance memory cells may be configured to store a first data value by maintaining a first electrical resistance and to store a second data value by maintaining a second electrical resistance. The first and second data values are different, and the second resistance is greater than the first resistance. Each of the second variable resistance memory cells may be configured to store the first data value by maintaining a third electrical resistance and to store the second data value by maintaining a fourth electrical resistance. The fourth resistance may be greater than the third resistance, and the third resistance may be less than the first resistance.

Abstract: The invention is directed to decreasing a circuit size of a system in which a plurality of devices or circuit blocks share and use one memory. A system is configured so that a memory block serves as a master and each of circuit blocks serves as a slave, and thus the slave side (the circuit blocks) receives necessary data from the memory block by only having decoders corresponding to addresses assigned thereto in advance and registers. In this case, since the registers have been also needed in a conventional system in order to hold data read out from a memory, the circuit size decreases in the whole system. Since this effect is enhanced in proportion to the number of the circuit blocks sharing the memory block, the effect is enhanced as the system size increases.

Abstract: A device includes: non-volatile memory; a controller in communication with the non-volatile memory, wherein the controller is programmed to move data from a volatile memory to the non-volatile memory upon a loss of power of a primary power source of the volatile memory; and a backup power supply providing temporary power to the controller and the volatile memory upon the loss of power of the primary power source, including: a capacitor bank with an output terminal; a connection to a voltage source that charges the capacitor bank to a normal operating voltage; and a state-of-health monitor that is programmed to generate a failure signal based on a voltage at the output terminal of the capacitor bank.

Abstract: A memory device for use with a primary power source and a backup power source, includes: volatile memory; an interface for connecting to a backup power source; a plurality of ports, each of which is for receiving a different corresponding non-volatile memory chip; a plurality of interfaces, each of which is for communicating through a different corresponding one of the plurality of ports with any non-volatile memory connected to that port; a controller that is programmed to activate a selectable set of the plurality of interfaces depending on which ports are to receive non-volatile memory chips, wherein said controller is also programmed to react to a loss of power from the primary power source by moving data from the volatile memory through the selected interfaces to whatever non-volatile memory is connected to the selectable set of interfaces.

Abstract: The threshold voltage range of a multilevel memory cell may be increased without using a negative voltage pump. In one embodiment, an added positive voltage may be applied to the source of the selected cell. A boost voltage may be applied to the output of a sense amplifier. Non-ideal characteristics of a buffer that supplies the voltage to the selected cell may be compensated for in some embodiments.

Abstract: In one embodiment, a programmable logic device includes a plurality of logic blocks; a plurality of input/output blocks; volatile configuration memory adapted to store configuration data for configuration of the logic blocks and input/output blocks; embedded block RAM adapted to store user data; flash memory having at least a first partition and a second partition; and a data port adapted to provide external device access to the first partition of the non-volatile memory. The flash memory is adapted to store within the first partition user data from the data port and is further adapted to store within the second partition user data from the embedded block RAM.

Abstract: A semiconductor memory device includes a memory cell array having a plurality of variable resistance memory cells divided into first and second areas. An I/O circuit is configured to access the memory cell array under the control of control logic so as to access the first or second area in response to an external command. The I/O circuit accesses the first area using a memory cell unit and the second area using a page unit.

Abstract: An integrated circuit including an array of memory cells, a circuit, volatile storage, and non-volatile storage. The circuit is configured to detect defective memory cells in the array of memory cells and provide addresses of the defective memory cells. The volatile storage is configured to store the addresses, where each entry in the volatile storage includes one of the addresses and a volatile storage master bit. The non-volatile storage is configured to store the addresses, where each entry in the non-volatile storage includes one of the addresses and a non-volatile storage master bit.

Abstract: A SRAM cell having two cross-coupled inverters formed by CMOS technology and first and second chalcogenic elements integrated with the SRAM cell to add nonvolatile properties to the storage cell. The PCM resistors are programmed to the SET state and the RESET state, and upon power-up the SRAM cell takes on the data contained in the PCM cells.

Abstract: A hybrid solid-state memory system is provided for storing data. The solid-state memory system comprises a volatile solid-state memory, a non-volatile solid-state memory, and a memory controller. Further, a method is provided for storing data in the solid-state memory system. The method comprises the following steps. A write command is received by the memory controller. Write data is stored in the volatile memory in response to the write command. Data is transferred from the volatile memory to the non-volatile memory in response to a data transfer request.

Abstract: A memory device includes a memory cell array including a NAND flash cell portion including a plurality of first columns of serially-connected flash memory cells and a non-volatile random access memory (NVRAM) cell portion including a plurality of second columns of NVRAM cells. The flash memory cells and the NVRAM cells are arranged such that respective word lines are connected to flash memory cells and NVRAM cells in each of respective rows, which may correspond to page units including flash memory cells and NVRAM cells.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode.

Abstract: A random-access non-volatile semiconductor memory device, which does not use individual gate terminals of transistors of memory cells in order to select individual memory cells for read/write operations performed on the device. The gate terminals of the memory cells are all biased to the same voltage during a read or write operation. For example, the gate terminals of the memory cells in the array are electrically connected together. By appropriate control of source and drain voltages during a read or write operation, discrimination can be achieved between selected and non-selected memory cells of the array.

Abstract: A memory system for storing one or more addresses includes a transposable memory having word lines, bit lines, transposed word lines and transposed bit lines and that receives and stores an input array having dimensions M by N and a content addressable memory (CAM) that reads the transposed word lines of the transposable memory to form input words and that stores the input words in an N by M array.

Abstract: A memory manager for a system, a system that includes the memory manager and a method of using thereof are provided. The memory manager manages memory allocations in at least a memory. The memory manger comprises, a first unit configured for receiving a plurality of requests from one or more components of one or more applications of a system. The memory manager also includes a second unit configured for optimizing memory allocations for the plurality of requests.

Abstract: A semiconductor device includes: a first sector (12) having data that are all to be erased and having flash memory cells; a second sector (14) having data that are all to be retained and having flash memory cells; a sector select circuit (16) selecting a pair of sectors from among sectors during erasing the data in the first sector, said pair of sectors being the first sector and the second sector; and an SRAM array (storage) (30) retaining the data of the second sector. The present invention can provide a semiconductor device in which a reduced number of sector select circuits is used so that the area of memory cell array can be reduced and provide a method of controlling the semiconductor device.

Abstract: An in-memory processor includes a memory array which stores data and an activation unit to activate at least two cells in a column of the memory array at generally the same time thereby to generate a Boolean function output of the data of the at least two cells. Another embodiment shows a content addressable memory (CAM) unit without any in-cell comparator circuitry.

Abstract: An integrated circuit includes a plurality of tiles. One tile is a master tile. Other tiles contain writable registers of memory structures. Information for configuring circuitry of the tile is stored in the register in the tile. An individual one of the registers can be written via the master tile. Each memory structure of a register includes a non-volatile floating gate cell (that stores the configuration information) as well as a volatile cell. All transistors have the same gate insulator thickness. Although a programming pulse signal is applied to all memory structures, the state of the non-volatile cell of a memory structure is only changed if the state stored by the associated non-volatile cell differs from the state stored by the volatile cell. Floating gates are automatically refreshed by the programming pulse signal. By storing configuration information in each tile, inefficiencies associated with using blocks of non-volatile memory are avoided.

Abstract: Systems and processes may use a first memory, a second memory, and a memory controller. The second memory is at least as large as a block of the first memory. Data is received and stored in the second memory for further writing to the second memory.

Abstract: A boot up method makes an electronic system boot up by a processor according to a boot code in a NAND flash memory and includes the following steps. First, the flash memory storing a boot code or boot codes is provided. Next, a first boot code is copied to an XIP memory in response to a hardware reset signal. Then, the processor executes the first boot code in the XIP memory and thus makes the system boot up. Next, whether the system boots up successfully is judged after a time delay. When the system fails to boot up, the system is reset and a second boot code is copied to the XIP memory. Thereafter, the processor executes the second boot code in the XIP memory and thus boots up the system. If the system still fails to boot up, the above-mentioned steps are repeated until the system boots up successfully.

Abstract: An electronic system includes a flash memory die having multiple flash memory cells. Each flash memory cell is operable to store at least four bits of data. A second die includes a controller for accessing the flash memory cells. DRAM is used by the controller to temporarily store data. An interface is operable to send and receive signals associated with the flash memory cells to a host. A housing contains the flash memory die, the second die, the DRAM, and the interface.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die.

Abstract: A memory device for use with a primary power source includes: volatile memory including a plurality of memory portions each of which has a normal operating state and a low-power state; an interface for connecting to a backup power source arranged to temporarily power the volatile memory upon a loss of power from the primary power source; a non-volatile memory; and a controller in communication with the volatile memory and the non-volatile memory programmed to detect a loss of power of the primary power source and in response to move data from the volatile memory to the non-volatile memory at least one memory portion at a time, and while moving data from the volatile memory to the non-volatile memory place the memory portions from which data is being moved into a normal operating state and the memory portions from which data is not being moved into a low-power state.

Abstract: A memory module fast in random accesses, large in capacity, and low in fabricating cost. And the memory module can assure high security. The memory module consists of a flash memory, a dynamic random access memory, and a control circuit. The control circuit enables data transfer between the flash memory and the dynamic random access memory only with a read operation for a specific address in the memory module. When reading data from the memory module, the control circuit refreshes the dynamic random access memory. Thus the present invention can realize a large capacity and low cost memory module capable of reading data fast reading and assuring high security.

Abstract: A Random Access Memory (RAM) and method of using the same are disclosed. The RAM includes a plurality of memory cells arranged in columns and in rows with each memory cell coupled to at least one word line and at least one bit line. The RAM includes a plurality of switches with at least one of the switches coupled between two of the memory cells to allow data to be copied from one of the two memory cells to the other of the two memory cells. In another aspect, the two memory cells can be considered a dual bit cell that contains a copying mechanism. There are two interleaved memory planes, assembled from bit cells that contain two bits of information. One bit is the primary bit that corresponds to the normal RAM bit. The second bit is able to receive a copy and hold the primary value. When the copying mechanism is over, the two memory planes may act as two completely independent structures.

Abstract: A memory device that, in certain embodiments, includes a memory element and a digital filter. The digital filter may include a counter and a divider, where the divider is configured to divide a count from the counter by a divisor.

Abstract: In accordance with at least one embodiment, a method, apparatus, and article of manufacture are provided for configuring a virtual boundary register in a programmable logic device (PLD), transmitting a first user-definable-command operation code (opcode) to the PLD to effect programming of a memory device coupled to the PLD, and preferably transmitting a second user-definable-command opcode to the PLD, the second user-definable-command opcode causing the physical boundary scan circuitry to load the virtual boundary register. The foregoing is preferably achieved in accordance with a boundary scan standard (e.g., Institute of Electrical and Electronics Engineers, Inc. (IEEE) 1149.1, dated 2001).

Abstract: Circuitry and a method for indicating a multiple-type memory is disclosed. The multiple-type memory includes memory blocks in communication with control logic blocks. The memory blocks and the control logic blocks are configured to emulate a plurality of memory types. The memory blocks can be configured into a plurality of vertically stacked memory planes. The vertically stacked memory planes may be used to increase data storage density and/or the number of memory types that can be emulated by the multiple-type memory. Each memory plane can emulate one or more memory types. The control logic blocks can be formed in a substrate (e.g., a silicon substrate including CMOS circuitry) and the memory blocks or the plurality of memory planes can be positioned over the substrate and in communication with the control logic blocks. The multiple-type memory may be non-volatile so that stored data is retained in the absence of power.

Abstract: A method of converting a static random access memory cell to a read only memory cell and the cell thus converted is disclosed. The cell to be converted comprises a data retention portion powered by a higher and lower voltage supply line and four transistors arranged as two cross coupled inverters. It is converted to a read only memory cell by severing a connection between at least one of said transistors within a first of said two inverters and one of said voltage supply lines such that when powered said first inverter outputs a predetermined value.

Abstract: A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode.

Abstract: A non-volatile memory of a first type, having characteristics of high capacity and coarse granularity, is associated with a non-volatile memory of a second type, having characteristics of low capacity and fine granularity. These memories are managed such that a non-volatile memory resulting from this association has the characteristics of high capacity of the first type of non-volatile memory and fine granularity of the second type of non-volatile memory.

Abstract: A memory device that, in certain embodiments, includes a memory element and a digital filter. The digital filter may include a counter and a divider, where the divider is configured to divide a count from the counter by a divisor.

Abstract: Example embodiments relate to a semiconductor memory system which may include a volatile memory and a non-volatile memory that share a common bus, and a method for controlling the operation of the non-volatile memory. The semiconductor memory system may include a non-volatile memory and a memory controller. The non-volatile memory may include a buffer memory that temporarily stores data to be read from or to be written to a memory cell array, and an internal controller. The memory controller may transmits a mode signal to the non-volatile memory in response to a control signal, the control signal corresponds to either a read mode or a write mode to be applied to the non-volatile memory. In response to the mode signal, the internal controller may control the data to be read to be stored in the buffer memory, if the read mode is to be applied, and the internal controller may control the buffer memory to stand-by until a write command is received, if the write mode is to be applied.

Abstract: A non-volatile static random access memory (“SRAM”) cell using variable resistance random access memory (“RAM”) cells is described. A memory tri-cell includes an SRAM cell with a first charge node and a second charge node. A first variable resistance random access memory cell is coupled between the first charge node and a supply voltage bus. A second variable resistance random access memory cell is coupled between the first charge node and a ground bus. A first control gate is coupled between the supply voltage bus and the first variable resistance random access memory cell. A second control gate is coupled between the ground bus and the second variable resistance random access memory cell.

Abstract: A semiconductor device having an architecture for reducing an area is provided. The semiconductor device includes a memory cell array including a plurality of non-volatile memory cells, a plurality of registers each configured to store pre-fetch unit data, and a write driver circuit configured to write pre-fetch unit data sequentially output from the plurality of registers to the memory cell array during a write operation. The semiconductor device also includes a sense amplifier circuit configured to sense and amplify pre-fetch unit data sequentially output from the memory cell array and to sequentially store the amplified pre-fetch unit data in the plurality of registers, respectively, during a read operation.