Abstract: The present disclosure includes apparatuses and methods for data movement. An example apparatus includes a memory device that includes a plurality of subarrays of memory cells and sensing circuitry coupled to the plurality of subarrays. The sensing circuitry includes a sense amplifier and a compute component. The memory device also includes a plurality of subarray controllers. Each subarray controller of the plurality of subarray controllers is coupled to a respective subarray of the plurality of subarrays and is configured to direct performance of an operation with respect to data stored in the respective subarray of the plurality of subarrays. The memory device is configured to move a data value corresponding to a result of an operation with respect to data stored in a first subarray of the plurality of subarrays to a memory cell in a second subarray of the plurality of subarrays.

Abstract: Systems and methods are disclosed for error correction control (ECC) for a refreshable memory device coupled to a system on a chip SoC. The memory device including a parity region and a user data region. A method includes determining with the SoC a first refresh rate for the user data region of the memory device and a second refresh rate for the parity region of the memory device, where the second refresh rate is different than the first refresh rate. Parity data is generated for a write operation of a user payload data (UPD) to the user data region of the memory device. The user data region of the memory device is refreshed at the first refresh rate and the parity region is refreshed at the second refresh rate.

Abstract: A semiconductor device includes a stacked plurality of memory chips. The memory chips each include a plurality of memory banks, a plurality of read/write buses that are assigned to the respective memory banks, and a plurality of penetration electrodes that are assigned to the respective read/write buses and arranged through the memory chip. Penetration electrodes arranged in the same positions as seen in a stacking direction are connected in common between the chips. In response to an access request, the memory chips activate the memory banks that are arranged in respective different positions as seen in the stacking direction, whereby data is simultaneously input/output via the penetration electrodes that lie in different planar positions.

Abstract: The pulse width adjusting circuit includes a pulse delaying circuit for inputting an inputted pulse signal a and for outputting a plurality of different delayed pulse signals b1, b2, . . . , a transmission gate for inputting an inputted pulse signal a and controlling the passage of the inputted pulse signal a in response to the application of two delayed pulse signals from among the plurality of different delayed pulse signals b1, b2, . . . , and a pulse width setting circuit connected to the transmission gate for setting the pulse width of an outputted pulse signal c generated on the basis of the inputted pulse signal a passing through the transmission gate.

Abstract: A memory arrangement includes a plurality of memory blocks, a first group of access ports, and a second group of access ports. Routing circuitry couples each pair of the first and second groups of access ports to a respective one of the memory blocks. Each pair includes a first access port from the first group and a second access port from the second group. The first access port has write access to a first portion of the respective memory blocks but not to a second portion of the memory block, and has read access to the second portion but not to the first portion. The second access port has write access to the second portion but not to the first portion, and has read access to the first portion but not to the second portion.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: A semiconductor memory device includes an internal clock generator configured to generate an internal clock signal having a first clock period in response to a chip enable signal and change the first clock period of the internal clock signal in response to a clock control signal, and a controller configured to receive external commands including the chip enable signal and generate the clock control signal corresponding to a first external command other than the chip enable signal. Here, the semiconductor memory device performs a data input/output operation in response to the internal clock signal with the changed clock period.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: Time-switch carrying removable storage includes a memory cell array, a bit line decoder connected with bit lines of the memory cell array, a word line decoder connected with word lines of the memory cell array, a bit line system amplifier connected with the bit line decoder, a word line system amplifier connected with the word line decoder, a semiconductor time switch clamped or bridged between the bit line system amplifier and the bit line decoder, and performing time management of access of the bit line amplifier and the bit line decoder to/from each other without a power supply, a time switch initializer which sets an operation period of the semiconductor time switch, and a controller connected with the bit line system amplifier and the word line system amplifier to control the amplifiers, and having an I/O terminal which transmits/receives an input/output signal.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: A delay locked loop (DLL) is added to the system in order to provide an accurate, PVT insensitive translation of the drive clocks into the write data eye. Adding a master-slave DLL to the system provides an accurate, PVT insensitive translation of the echo clocks into the read data eye. Solidifying the timing critical drive and receive logic which directly interfaces to the I/O buffers reduces the pin-to-pin skews. Utilizing clock phase outputs of the DLL in the solidified drive and receive logic blocks reduces further the skew between the clock and related data signals, and also removes the reliance on a differential clock. The system allows a much more relaxed constraint on clock duty cycle. Design of circuitry within the solidified drive and receive logic blocks permits simple logic modeling for fit within an ASIC flow. Physical design of the solidified drive and receive logic blocks permits simple fit within ASIC place and route flows for increased ease of implementation and ease of reuse.

Abstract: Provided is a test mode control circuit capable of preventing an MRS (mode register set) from changing in a test mode exit after a test mode entry. In the test mode control circuit, an MRS controller logically combines an MRS signal, a bank address, an MRS address, and a test mode control signal to output a latch control signal. A test mode control unit detects a test mode entry and a test mode exit to selectively activate one of a test mode set signal and a test mode exit signal, and outputs the test mode control signal having different voltage levels according to an activation state of the test mode set signal or the test mode exit signal. An address latch latches an input address when the MRS signal is activated, and outputs the latched input address as the MRS address when the latch control signal is activated.

Abstract: A memory access mode detection circuit and method for detecting and initiating memory access modes for a memory device The memory access mode detection circuit receives the memory address signals, the control signals, and the clock signal and generates a first mode detection signal in response to receipt of the memory address signals or a first combination of control signals. An first mode initiation signal is generated a time delay subsequent to the detection signal to initiate the first mode memory access operation. In response to receipt of a second combination of control signals and an active clock signal, the memory access mode detection circuit further generates a second mode detection signal to initiate a second mode memory access operation and to suppress generation of the first mode detection signal, thereby canceling the first mode memory access operation.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: A microcomputer is provided having a memory card interface capable of correctly latching data even when a card such as an MMC card is connected thereto. In the microcomputer having an interface with an external device such as a memory card, the interface unit is provided with an output driver connected to an external terminal for outputting a clock signal to output the clock signal and with an equivalent load circuit capable of imparting, to the clock signal extracted from an arbitrary position in a stage previous to the output driver in a clock signal path, delay equivalent to delay resulting from an external load connected to the external terminal in order to generate a clock signal for latching data inputted from the memory card.

Abstract: A test method is described in which a signal from a tester enters a memory chip or memory module into a special test mode. The special test mode allows leakage defects connected to bit lines to be detected using bit line sense amplifiers. A first test command is issued by a tester, after which a word line is activated. The tester issues a second test command, delayed from the first test command, during the special test mode to turn-on the memory bit line sense amplifiers. The delayed second test command allows sufficient time for the leakage from defects at the crossing of the bit lines and the word line to charge capacitance of the bit lines and allow detection by the sense amplifiers.

Abstract: A translator of an apparatus in an example through a serial connection external interface of a printed circuit board (PCB) communicates between a serial memory protocol within the PCB and a parallel memory protocol outside the PCB.

Abstract: A core including a write logic IP block, a read logic IP block, a master delay IP block and an address and control IP block. The write logic IP block may be configured to communicate data from a memory controller to a double data rate (DDR) synchronous dynamic random access memory (SDRAM). The read logic IP block may be configured to communicate data from the double data rate (DDR) synchronous dynamic random access memory (SDRAM) to the memory controller. The master delay IP block may be configured to generate one or more delays for the read logic IP block. The address and control logic IP block may be configured to control the write logic IP block and the read logic IP block. The core is generally configured to couple the double data rate (DDR) synchronous dynamic random access memory (SDRAM) and the memory controller.

Abstract: A method and system for optimizing use of signal paths on a DRAM interface. Signal paths that have a ‘don't care’ status during DRAM refresh are assigned to communication with another device. Onset of the refresh procedure triggers diversion of shared signal paths away from the DRAM to the other device for the duration of the refresh the shared signal paths include at least some of the address and data signal paths.

Abstract: A new method is provided for the interconnection of bit lines in the test structure. The invention provides for the creation of a cross comb bit line design in the test structure which allows for the detection and identification of diagonal or horizontal bridging between two identifiable capacitors of DRAM structures.

Abstract: A method and associated apparatus are provided for improving the performance of a high speed data bus, such as a memory bus, using selectively activated receiver and driver pairs. Each receiver and driver pair may be selectively activated to permit data communication on a segment of the high speed data bus coupled to the activated receiver and driver pair. Each receiver and driver pair may also be deactivated, thereby disconnecting at least a respective segment of the high speed data bus, so that communicating system components may be connected in a substantially stubless environment.

Abstract: An external access timing signal becomes active according to changes of the external address. An address latch signal becomes active according to the timing when the external access timing signal becomes active. In a case where the changes of the external address occurs while the address latch signal is active and consequently the external access timing signal becomes active, a refresh arbiter signal does not become active. When the refresh arbiter signal becomes active after the generation of the refresh timing signal, a refresh execution timing signal becomes active according to the change of the refresh arbiter signal. The time period when the address latch signal is active is set to be substantially the same as the preferable activation time period. The time period when the external access timing signal is active is set to be substantially the same as the preferable pre-charge time period.

Abstract: A phase-changeable memory device comprises a substrate and an access transistor formed in and/or on the substrate. Laterally spaced apart first and second conductive patterns are disposed on the substrate and have opposing sidewalls. A conductor electrically connects the first conductive region to a source/drain region of the access transistor. A phase-changeable material region is disposed between the first and second conductive patterns and contacts the opposing sidewalls of the first and second conductive patterns. Contact areas between the conductive patterns and the phase-changeable material region are preferably substantially smaller than contact areas at which the conductive patterns contact conductors (e.g., vias) connected thereto, such that high current densities may be developed in the phase-changeable material. Methods of fabricating such devices are also discussed.

Abstract: A magnetic memory element has reduced demagnetization coupling between a pinned layer and a free layer. The element includes a pinned ferromagnetic layer and a free ferromagnetic layer which are separated by a barrier layer. The pinned layer is pinned by an antiferromagnetic layer. An offset ferromagnetic layer is provided on a side of the antiferromagnetic layer opposite the pinned ferromagnetic layer to reduce demagnetization coupling between the free ferromagnetic layer and the pinned ferromagnetic layer.

Abstract: A reliability evaluation value of a gate insulating film of an insulated gate type (MIS) transistor in an unselected state is set to a value equal to or smaller than the reliability evaluation value of the gate insulating film of the MIS transistor in a selected state. An electric field applied to the gate insulating film is determined in accordance with the reliability evaluation value. Therefore, it is possible to the gate insulating film applied electric field of the MIS transistor in the unselected state lower than the electric field in the selected state to assure the reliability of the gate insulating film of the MIS transistor in the unselected state. Thus, the reliability of the gate insulating film of the MIS transistor in the unselected state is assured, and a semiconductor device with an improved gate dielectric characteristics.

Abstract: A nonvolatile read-only memory device, wherein a word line is on a substrate and the word line includes a metal layer a polysilicon line. A trapping layer is further located between the word line and the substrate. A polysilicon protection line is formed over the substrate and the polysilicon protection line connects the word line and a grounded doped region in the substrate, wherein the resistance of the polysilicon protection line is higher than that of the word line.

Abstract: A circuit configuration for driving a programmable link has a drive circuit for the selection and blowing of the fuse, and also a shift register, by which an activation signal can be fed to the drive circuit. In order to provide the data to be blown, in a preferred embodiment, a volatile memory cell may be provided. The present circuit configuration enables the blowing of fuses and thus repair of defective memory cells in mass memories even after encapsulation of a chip having the mass memory. Moreover, the shift register described effectively prevents impermissibly high currents from being able to occur as a result of simultaneous blowing of too many fuses.

Abstract: A fractal structure is formed to include at least one heterojunction formed by two regions different in fractal dimension characterizing the self similarity from each other. Especially in a stellar fractal structure, the heterojunction is formed by forming a region (dendritic region) with a lower fractal dimension around a core (somatic region) with a higher fractal dimension. These two regions forming the heterojunction are different in phase from each other. For example, they are a combination of a ferromagnetic phase and a paramagnetic phase, or a combination of a metal phase and a Mott insulative phase. The fractal structure may be used to realize a functional material or a functional device.

Abstract: A memory cell array has a unit formed from one memory cell and two select transistors sandwiching the memory cell. One block has one control gate line. Memory cells connected to one control gate line form one page. A sense amplifier having a latch function is connected to a bit line. In a data change operation, data of memory cells of one page are read to the sense amplifiers. After data are superscribed on data in the sense amplifiers, and a page erase is performed, data in the sense amplifiers are programmed in the memory cells of one page. Superscription of data in the sense amplifiers allows a data change operation for byte data or page data.

Abstract: A semiconductor memory device is provided which is capable of correcting efficiently bits having a low error rate in a Pause Refresh Tail distribution and of greatly reducing a data holding current by lengthening a refresh period so that the refresh period exceeds a period for a Pause Refresh real power. The semiconductor memory device is made up of a 16-bit SDRAM (Synchronous Dynamic Random Access Memory) having a Hamming Code and including an ECC (Error Correcting Code) circuit made up of a encoding circuit being controlled by a first test signal to output by arithmetic operations a parity bit corresponding to an information bit, a decoding circuit being controlled by a second test signal to output an error location detecting signal indicating an error bit in bits of a codeword, and an error correcting circuit being controlled by a third test signal to input an error location detecting signal and to output an error bit in a reverse manner.

Abstract: A method of operating a digital computer includes the steps of addressing a memory, reading a row of data from the memory, providing the same computational instruction simultaneously to each processor element of a plurality of processor elements, where each of the processor elements is selectively coupled to a corresponding bit position of the memory row of data, performing the same computational operation on a selected plurality of data bits in parallel, and writing the result into the memory at the same row as the data was read from.

Abstract: A graphics subsystem having a dual-data rate (DDR) synchronous dynamic random access memory (SDRAM)/synchronous graphic random access memory (SGRAM), which has a full-page increment/decrement burst mode. In one embodiment, the DDR SDRAM/SGRAM includes a memory array and a logic circuitry coupled thereto. The graphics subsystem may be formed on a single semiconductor chip. The memory array is addressable by even and odd word addresses. The logic circuitry has a burst increment mode to access the array starting at an even word address and a burst decrement mode to access the array starting at an odd word address.

Abstract: A clock-generating circuit for forming internal clock signals by comparing a signal obtained by delaying, through a variable delay circuit, an input clock signal input through an external terminal with the input clock signal through a phase comparator circuit, and so controlling the delay time of the variable delay circuit that they are brought into agreement with each other, wherein the clock-generating circuit and an internal circuit to be operated by the clock signals formed thereby are formed on a common semiconductor substrate, and an element-forming region in which the clock-generating circuit is formed is electrically isolated from an element-forming region in which the digital circuit is constituted on the semiconductor substrate relying upon the element-isolation technology. The power-source passages, too, are formed independently of other digital circuits.

Abstract: In performing a read operation or a write operation in a memory cell, a row control circuit is first operated to activate a word line. Subsequently, a command control circuit receives a column operation command in synchronization with a clock signal so as to operate a column control circuit. Here, under the control of a timing adjusting circuit, the column control circuit starts operating a predetermined delay time after the reception of the column operation command. By delaying the operation of the column control circuit, the read operation or the write operation in the memory cell can be performed at the optimum timing corresponding to the operating timing of an internal circuit independent of the cycle of the clock signal. As a result, the number of times in receiving commands per unit time can be increased to enhance the bus occupation rate of data.

Abstract: An interprocessor communication system is used in a multiprocessor where each processor is simultaneously a transmitter and a receiver of data. A data bus having only two states, a default state and an active state (e.g. high and low levels), is coupled to a plurality of bi-directional bus transceivers. Each transceiver is coupled between a processor element and a data bus and has an enable input. When the transceiver is enabled, it propagates an active level received at one end, either the processor element end or the data bus end, to the other end. The active state dominates on the interprocessor bus, so for instance, when multiple processors transmit, if any processor transmits a low level, then the bus will be low and all processors with enabled transceivers will also receive that low signal. This can be used for broadcasting data or combine operations such as AND or minimum.

Abstract: A system and method for providing battery back-up of SDRAM data upon power failure in which a power-down event is detected early and system hardware configures SDRAM self-refresh circuitry to set the SDRAM to a self refresh mode in which the SDRAM issues a single-refresh command just before system power drops below a safe threshold level and keeps the SDRAM in self-refresh mode after the system power drops by holding low a SDRAM clock enable signal using battery power. One embodiment for use with an external SDRAM controller includes a self-refresh control module (SRCM) and a battery backup module (BBUM). The BBUM includes power-down detection hardware and a battery for backing-up the SDRAM. In response to signals from the external SDRAM controller and the BBUM the self-refresh module generates SDRAM control signals for transitioning the SDRAM smoothly from normal mode to self-refresh mode during power-down events and vice-versa.

Abstract: A memory chip with a short data access time limits the propagation time of a bit on local data line strips which are far away from output amplifiers by centering switches with respect to a center of the cell array strips, wherein the switches are junction points between local data lines and main data lines.

Abstract: A method is provided for operating a memory system having a plurality of memory blocks. The method includes (1) periodically asserting a timing signal; (2) asserting a refresh pending signal in each of the memory blocks when the asserted timing signal is received; (3) within each of the memory blocks, performing a refresh operation if the refresh pending signal in the memory block is asserted and an idle cycle exists in the memory block; (4) within each of the memory blocks, asserting a refresh acknowledge signal if a refresh operation is performed in the memory block; (5) within each of the memory blocks, de-asserting the refresh pending signal in the memory block if the refresh acknowledge signal is asserted in the memory block; (6) asserting a refresh forcing signal if the refresh pending signal in any of the memory blocks is asserted when the timing signal is asserted; and (7) forcing an idle cycle in all of the memory blocks if the refresh forcing signal is asserted.

Abstract: A data signal is output from an output circuit of a first chip and sent to a data input terminal in the second chip via a data lead line based on an output clock in first chip, which is sent to the second chip. And an input circuit in a second chip receives the data signal and transfers it inside in response to a transfer clock that has been generated from the output clock in the first chip. In synchronism with a single reference clock in the first chip, therefore, a data signal can be transferred to the second chip from the first chip at a high speed.

Abstract: An internal power supply circuit for a semiconductor memory device comprising a differential amplifier having a reference voltage as an input and utilizing an external power supply voltage. An amplifier output provides an internal power supply voltage. The amplifier is connected to a current source which comprises a plurality of transistors connected in series between one side of said amplifier and ground. A current control transistor having a channel larger than the channels of the transistors connected in series is switchable between a first state in which the current control transistor is substantially on and a second state in which said current control transistor is substantially off.

Abstract: A detector for non-destructive sensing of binary information at a selected location along a domain wall of a thin magnetic film strip. Voltages are applied across a set of contacts arranged along the margin of the strip and the value of the voltage measured at an arranged, centered contact indicates the presence or absence of a Bloch line-crosstie pair at that location.